MMBD353LT3G [ONSEMI]
Dual Hot Carrier Mixer Diodes; 双热载流子二极管混频器
| 型号： | MMBD353LT3G |
| 厂家： | 
ONSEMI |
| 描述： | Dual Hot Carrier Mixer Diodes |
| 文件： | 总3页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD352LT1,
MMBD353LT1,
MMBD354LT1,
MMBD355LT1
Dual Hot Carrier Mixer
Diodes
http://onsemi.com
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
3
SOT−23 (TO−236)
CASE 318
1
2
Features
• Very Low Capacitance − Less Than 1.0 pF @ Zero V
1
2
• Low Forward Voltage − 0.5 V (Typ) @ I = 10 mA
ANODE
CATHODE
F
3
• Pb−Free Packages are Available
CATHODE/ANODE
MMBD352LT1
STYLE 11
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
1
2
Continuous Reverse Voltage
V
R
7.0
V
CC
CATHODE
ANODE
3
THERMAL CHARACTERISTICS
CATHODE/ANODE
Characteristic
Symbol
Max
Unit
MMBD353LT1
STYLE 19
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
1 ANODE
2 ANODE
3
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
R
556
°C/W
q
JA
CATHODE
P
D
MMBD354LT1
STYLE 9
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
1 CATHODE
2 CATHODE
T , T
J
−55 to +150
ANODE 3
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBD355LT1
STYLE 12
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
Mxx M G
A
(EACH DIODE)
G
1
Rating
Symbol Min Max
Unit
Mxx = Device Code
Forward Voltage
V
−
0.60
V
F
M
= Date Code*
(I = 10 mAdc)
F
G
= Pb−Free Package
Reverse Leakage Current (Note 3)
I
R
mA
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(V = 3.0 V)
−
−
0.25
10
R
(V = 7.0 V)
R
Capacitance
C
−
1.0
pF
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
(V = 0 V, f = 1.0 MHz)
R
3. For each individual diode while the second diode is unbiased.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
September, 2006 − Rev. 6
MMBD352LT1/D
MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1
TYPICAL CHARACTERISTICS
1.0
100
10
T = 85°C
A
0.9
0.8
0.7
0.6
T = −40°C
A
1.0
0.1
T = 25°C
A
0.3
0.4
0.5
0.6
0.7
0.8
0
1.0
2.0
3.0
4.0
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Capacitance
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
MMBD352LT1
SOT−23
3,000 Units / Tape & Reel
3,000 Units / Tape & Reel
MMBD352LT1G
SOT−23
(Pb−Free)
M5G
MMBD352LT3
SOT−23
10,000 Units / Tape & Reel
10,000 Units / Tape & Reel
MMBD352LT3G
SOT−23
(Pb−Free)
MMBD353LT1
SOT−23
3,000 Units / Tape & Reel
3,000 Units / Tape & Reel
MMBD353LT1G
SOT−23
(Pb−Free)
M4F
MMBD353LT3
SOT−23
10,000 Units / Tape & Reel
10,000 Units / Tape & Reel
MMBD353LT3G
SOT−23
(Pb−Free)
MMBD354LT1
SOT−23
3,000 Units / Tape & Reel
3,000 Units / Tape & Reel
M6H
MJ1
MMBD354LT1G
SOT−23
(Pb−Free)
MMBD355LT1
SOT−23
3,000 Units / Tape & Reel
3,000 Units / Tape & Reel
MMBD355LT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
NOM
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
MIN
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
e
q
A
L
A1
L1
VIEW C
H
E
MMBD352LT1
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
MMBD353LT1
STYLE 19:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.95
3. CATHODE−ANODE
0.037
0.95
0.037
MMBD354LT1
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
MMBD355LT1
2.0
0.079
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBD352LT1/D
相关型号：
MMBD354LT1G
SILICON, UHF BAND, MIXER DIODE, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
ROCHESTER
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