MMBD2836LT1 [ONSEMI]

Monolithic Dual Switching Diodes; 单片双开关二极管


型号：	MMBD2836LT1
厂家：	ONSEMI
描述：	Monolithic Dual Switching Diodes 单片双开关二极管整流二极管开关
文件：	总4页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ON Semiconductort

MMBD2835LT1

MMBD2836LT1

Monolithic Dual Switching

Diodes

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

Reverse Voltage

Forward Current

MMBD2835LT1

MMBD2836LT1

Vdc

CASE 318–08, STYLE 12

SOT–23 (TO–236AB)

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

CATHODE

Symbol

Max

Unit

ANODE

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

CATHODE

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

qJA

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

qJA

T , T

J stg

–55 to +150

DEVICE MARKING

MMBD2835LT1 = A3X; MMBD2836LT1 = A2X

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I = 100 µAdc)

MMBD2835LT1

MMBD2836LT1

(BR)

—

Vdc

Reverse Voltage Leakage Current (Note 3)

—

nAdc

(V = 30 Vdc)

MMBD2835LT1

MMBD2836LT1

100

(V = 50 Vdc)

Diode Capacitance (V = 0 V, f = 1.0 MHz)

—

4.0

Forward Voltage (I = 10 mAdc)

—

1.0

1.2

Vdc

Forward Voltage (I = 50 mAdc)

Forward Voltage (I = 100 mAdc)

Reverse Recovery Time (I = I = 10 mAdc, I

= 1.0 mAdc) (Figure 1)

—

4.0

R(REC)

1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

3. For each individual diode while the second diode is unbiased.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev. 3

MMBD2835LT1/D

MMBD2835LT1 MMBD2836LT1

820 Ω

+10 V

2.0 k

0.1 µF

100 µH

10%

90%

0.1 µF

DUT

= 1.0 mA

R(REC)

50 Ω OUTPUT

PULSE

GENERATOR

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

OUTPUT PULSE

INPUT SIGNAL

(I = I = 10 mA; MEASURED

at i

= 1.0 mA)

R(REC)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 10 mA.

Notes: 2. Input pulse is adjusted so I

is equal to 10 mA.

R(peak)

Notes: 3. t » t

Figure 1. Recovery Time Equivalent Test Circuit

CURVES APPLICABLE TO EACH CATHODE

100

= 150°C

= 125°C

= 85°C

= -40°C

1.0

0.1

1.0

0.1

= 85°C

= 55°C

= 25°C

0.01

0.001

= 25°C

0.2

0.4

0.6

0.8

1.0

1.2

V , FORWARD VOLTAGE (VOLTS)

V , REVERSE VOLTAGE (VOLTS)

Figure 2. Forward Voltage

Figure 3. Leakage Current

1.75

1.50

1.25

1.00

0.75

2.0

4.0

6.0

8.0

V , REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

http://onsemi.com

MMBD2835LT1 MMBD2836LT1

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

SOT–23

SOT–23 POWER DISSIPATION

SOLDERING PRECAUTIONS

The power dissipation of the SOT–23 is a function of the

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipa-

tion. Power dissipation for a surface mount device is deter-

The melting temperature of solder is higher than the

rated temperature of the device. When the entire device is

heated to a high temperature, failure to complete soldering

within a short time could result in device failure. There-

fore, the following items should always be observed in

order to minimize the thermal stress to which the devices

are subjected.

mined byT

of the die, R

, the maximum rated junction temperature

, the thermal resistance from the device

J(max)

θJA

junction to ambient, and the operating temperature, T .

Using the values provided on the data sheet for the SOT–23

package, P can be calculated as follows:

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

– T

J(max)

θJA

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference shall be a maximum of 10°C.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature T of 25°C,

one can calculate the power dissipation of the device which

in this case is 225 milliwatts.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

150°C – 25°C

556°C/W

= 225 milliwatts

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

The 556°C/W for the SOT–23 package assumes the use

of the recommended footprint on a glass epoxy printed

circuit board to achieve a power dissipation of 225 milli-

watts. There are other alternatives to achieving higher

power dissipation from the SOT–23 package. Another

alternative would be to use a ceramic substrate or an

aluminum core board such as Thermal Clad . Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

http://onsemi.com

MMBD2835LT1 MMBD2836LT1

PACKAGE DIMENSIONS

SOT–23 (TO–236AB)

CASE 318–08

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

2.80

1.20

0.89

0.37

1.78

MAX

3.04

1.40

1.11

0.1102 0.1197

0.0472 0.0551

0.0350 0.0440

0.0150 0.0200

0.0701 0.0807

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.0005 0.0040 0.013

0.0034 0.0070 0.085

0.0140 0.0285

0.0350 0.0401

0.0830 0.1039

0.0177 0.0236

0.35

0.89

2.10

0.45

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

Thermal Clad is a trademark of the Bergquist Company.

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

MMBD2835LT1/D

http://onsemi.com

MMBD2836LT1 [ONSEMI]

相关型号：

MMBD2836LT1G

MMBD2836X

MMBD2836XLT2

MMBD2836_15

MMBD2837

MMBD2837

MMBD2837

MMBD2837-T1

MMBD2837D87Z

MMBD2837G

MMBD2837L

MMBD2837L99Z