MMBD2836LT1G [ONSEMI]
Monolithic Dual Switching Diodes; 单片双开关二极管
| 型号： | MMBD2836LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Monolithic Dual Switching Diodes |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD2835LT1,
MMBD2836LT1
Monolithic Dual Switching
Diodes
Features
http://onsemi.com
• Pb−Free Packages are Available
CATHODE
1
MAXIMUM RATINGS (EACH DIODE)
ANODE
3
Rating
Symbol
Value
Unit
2
CATHODE
Reverse Voltage
Forward Current
MMBD2835LT1
MMBD2836LT1
V
35
75
Vdc
R
I
100
mAdc
mW
F
THERMAL CHARACTERISTICS
3
Total Device Dissipation FR−5 Board
(Note 1)
P
D
225
SOT−23 (TO−236AB)
CASE 318−08
STYLE 12
T = 25°C
A
1
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
2
Thermal Resistance, Junction−to−Ambient
R
q
JA
Total Device Dissipation Alumina
Substrate, (Note 2)
P
D
T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
q
JA
T , T
J
−55 to
+150
stg
xxx M G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
G
1
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
xxx = Specific Device Code
A3X = MMBD2835LT1
A2X = MMBD2836LT1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
SOT−23
MMBD2835LT1
3000 / Tape & Reel
MMBD2835LT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
SOT−23
MMBD2836LT1
3000 / Tape & Reel
MMBD2836LT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
June, 2005 − Rev. 4
MMBD2835LT1/D
MMBD2835LT1, MMBD2836LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I = 100 mAdc)
MMBD2835LT1
MMBD2836LT1
V
35
75
−
−
Vdc
R
(BR)
Reverse Voltage Leakage Current (Note 3)
I
−
−
nAdc
R
(V = 30 Vdc)
MMBD2835LT1
MMBD2836LT1
100
100
R
(V = 50 Vdc)
R
Diode Capacitance (V = 0 V, f = 1.0 MHz)
C
T
−
4.0
pF
R
Forward Voltage (I = 10 mAdc)
V
−
−
−
1.0
1.0
1.2
Vdc
F
F
Forward Voltage (I = 50 mAdc)
F
Forward Voltage (I = 100 mAdc)
F
Reverse Recovery Time (I = I = 10 mAdc, I
= 1.0 mAdc) (Figure 1)
t
rr
−
4.0
ns
F
R
R(REC)
3. For each individual diode while the second diode is unbiased.
820 W
I
F
+10 V
2.0 k
t
r
t
p
t
0.1 mF
I
F
t
t
100 mH
0.1 mF
rr
10%
90%
DUT
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
MMBD2835LT1, MMBD2836LT1
CURVES APPLICABLE TO EACH CATHODE
100
10
10
T
= 150°C
= 125°C
A
T
A
= 85°C
T
A
T
= −40°C
A
1.0
0.1
T
= 85°C
= 55°C
A
T
A
= 25°C
1.0
0.1
T
A
0.01
0.001
T
= 25°C
A
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.75
1.50
1.25
1.00
0.75
0
2.0
4.0
6.0
8.0
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
http://onsemi.com
3
MMBD2835LT1, MMBD2836LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
E H
E
1
2
MILLIMETERS
INCHES
NOM
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.69
2.64
MIN
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
e
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.014
0.083
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.021
0.094
A
C
A1
b
L
H
E
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
MMBD2835LT1/D
相关型号：
MMBD2836XLT2
DIODE 0.1 A, 70 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, CASE 318-03, 3 PIN, Signal Diode
ONSEMI
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