MJB5742T4G_技术文档

MJB5742T4G

NPN Silicon Power

Darlington Transistors

The Darlington transistors are designed for high−voltage power

switching in inductive circuits.

Features

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• These Devices are Pb−Free and are RoHS Compliant

POWER DARLINGTON

TRANSISTORS

8 AMPERES, 400 VOLTS

100 WATTS

Applications

• Small Engine Ignition

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Emitter−Base Voltage

Symbol

Value

400

800

8

Unit

Vdc

Adc

≈ 100

≈ 50

V

CEO(sus)

V

CEV

COLLECTOR 2,4

BASE

V

EB

Collector Current − Continuous

− Peak (Note 1)

I

8

16

C

I

CM

1

Base Current

− Continuous

− Peak (Note 1)

I

2.5

5

Adc

B

I

BM

EMITTER 3

Total Device Dissipation @ T = 25_C

P

2

W

A

D

Derate above 25°C

0.016

W/_C

MARKING

DIAGRAM

Total Device Dissipation @ T = 25_C

P

100

0.8

W

C

Derate above 25°C

W/_C

Operating and Storage Junction

Temperature Range

T , T

J

−65 to +150

_C

stg

2

B5742G

AYWW

D PAK

CASE 418B

STYLE 1

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

1.25

62.5

275

Unit

_C/W

_C

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

R

q

JC

R

q

JA

B5742 = Specific Device Code

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

T

L

A

Y

= Assembly Location

= Year

WW

G

= Work Week

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

ORDERING INFORMATION

†

Device

MJB5742T4G

Package

Shipping

2

D PAK

800 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

Publication Order Number:

June, 2011 − Rev. 2

MJB5742/D

MJB5742T4G

ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (Note 2)

Collector−Emitter Sustaining Voltage (I = 50 mA, I = 0)

V

CEO(sus)

400

−

Vdc

C

B

Collector Cutoff Current (V

= Rated Value, V

= 1.5 Vdc)

I

−

1

5

mAdc

CEV

BE(off)

CEV

(V

CEV

= Rated Value, V

= 1.5 Vdc, T = 100_C)

BE(off)

C

Emitter Cutoff Current (V = 8 Vdc, I = 0)

I

−

75

mAdc

EB

C

EBO

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

Clamped Inductive SOA with Base Reverse Biased

I

See Figure 6

See Figure 7

S/b

RBSOA

ON CHARACTERISTICS (Note 2)

DC Current Gain (I = 0.5 Adc, V = 5 Vdc)

h

FE

50

200

100

400

−

C

CE

(I = 4 Adc, V = 5 Vdc)

C

CE

Collector−Emitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc)

V

−

2

3

2.2

Vdc

C

B

CE(sat)

Collector−Emitter Saturation Voltage (I = 8 Adc, I = 0.4 Adc)

C

B

Collector−Emitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc, T = 100_C)

C

B

C

Base−Emitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc)

−

2.5

3.5

2.4

Vdc

C

B

BE(sat)

Base−Emitter Saturation Voltage (I = 8 Adc, I = 0.4 Adc)

C

B

Base−Emitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc, T = 100_C)

C

B

C

Diode Forward Voltage (Note 3) (I = 5 Adc)

V

f

−

2.5

F

SWITCHING CHARACTERISTICS

Typical Resistive Load (Table 1)

Delay Time

t

−

0.04

0.5

8

−

ms

d

(V = 250 Vdc, I

= 6 A

Rise Time

Storage Time

Fall Time

t

r

CC

C(pk)

I

B1

= I = 0.25 A, t = 25 ms,

B2

p

s

Duty Cycle v 1%)

t

2

f

Inductive Load, Clamped (Table 1)

Voltage Storage Time

t

−

4

2

−

ms

sv

(I

= 6 A, V

= 250 Vdc

= 5 Vdc)

C(pk)

CE(pk)

= 0.06 A, V

BE(off)

I

B1

Crossover Time

t

c

2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%.

3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the

Forward Recovery Voltage (V ) of this diode is comparable to that of typical fast recovery rectifiers.

f

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2

MJB5742T4G

TYPICAL CHARACTERISTICS

100

80

I

C(pk)

V

CE(pk)

SECOND BREAKDOWN DERATING

90% V

90% I

CE(pk)

C

I

C

t

sv

t

rv

t

fi

t

ti

60

40

20

0

t

c

THERMAL DERATING

V

I

10% V

CE(pk)

CE

10%

2% I

I

C

90% I

C(pk)

B

B1

0

20

40

60

80

100

120

140

160

TIME

T , CASE TEMPERATURE (°C)

C

Figure 1. Power Derating

Figure 2. Inductive Switching Measurements

2000

1000

2.4

2.2

2

150°C

+ꢀ25°C

h

= 20

FE

V

CE

= 5 V

1.8

1.6

1.4

1.2

-ꢀ55°C

+ꢀ25°C

-ꢀ55°C

100

+150°C

1

0.8

0.6

0.4

10

0.1

1

2

I , COLLECTOR CURRENT (AMPS)

5

10

0.2

0.5

1

2

I , COLLECTOR CURRENT (AMPS)

5

10

C

Figure 3. DC Current Gain

Figure 4. Base−Emitter Voltage

1.8

1.6

1.4

1.2

1

h

FE

= 20

-ꢀ55°C

0.8

0.6

0.4

0.2

0.1

+ꢀ25°C

+150°C

0.2

0.5

1

2

5

10

I , COLLECTOR CURRENT (AMPS)

C

Figure 5. Collector−Emitter Saturation Voltage

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3

MJB5742T4G

Table 1. Test Conditions for Dynamic Performance

RESISTIVE

SWITCHING

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

+ꢀ5 V

V

CC

33

1N493

3

+V

CC

MJE21

0

L

MR826

*

0.001 mF

R

C

1N493

33

TUT

3

V

clamp

I

C

SCOPE

R

P

W

2N222

2

B

R

B

1

k

DUTY CYCLE ≤ 10%

t , t ≤ 10 ns

68

*SELECTED FOR ≥ 1 kV

1

5.1

k

r

f

I

B

D

+ꢀ5 V

V

CE

k

1

51

1

T.U.T.

1N493

-ꢀ4 V

k

2N2905

3

270

MJE20

0

0.02 mF

NOTE:

PW and V Adjusted for Desired I

47

100

CC

C

1/2

W

R

B

Adjusted for Desired I

B1

-V

BE(off)

COIL DATA:

V

= 30 V

CC

GAP FOR 200 mH/20 A

= 200 mH

V

= 250 V

CC

D1 = 1N5820 OR EQUIV.

FERROXCUBE CORE #6656

FULL BOBBIN (~16 TURNS) #16

= 250 Vdc

= 6 A

CE(pk)

L

coil

I

C(pk)

OUTPUT WAVEFORMS

+10 V

25 ms

I

C

t

f

CLAMPED

t ADJUSTED TO

1

OBTAIN I

I

C(pk)

C

0

t

TEST EQUIPMENT

L

(I

coil C

)

pk

t

1

t

f

t ≈

1

SCOPE-TEKTRONICS

475 OR EQUIVALENT

-9.2 V

V

CC

V

CE

V

ꢁOR

L

(I

CE

t , t < 10 ns

f

coil C

)

pk

r

t ≈

2

V

clamp

DUTY CYCLE = 1%

AND R ADJUSTED

V

clamp

t

R

B

C

FOR DESIRED I AND I

TIM

t

2

B

C

E

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4

MJB5742T4G

SAFE OPERATING AREA INFORMATION

REVERSE BIAS

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current condition allowable

during reverse biased turnoff. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 7 gives the complete RBSOA

characteristics.

breakdown. Safe operating area curves indicate I − V

C

CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on T = 25_C; T

is

C

J(pk)

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when T ≥ 25_C. Second breakdown limitations do

C

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figure 6 may be found at

any case temperature by using the appropriate curve on

Figure 1.

The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.

16

10

14

8

100 ms

12

3

10 ms

10

5ꢁms

1

8

0.5

0.3

BONDING WIRE LIMIT

1ꢁms

V

BE(off)

≤ 5 V

6

4

dc

THERMAL LIMIT

(SINGLE PULSE)

T = 100°C

J

0.1

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED V

0.05

2

0

CEO

MJB5742

200

0.02

5

10

V

20

50

100

400

0

100

200

300

400

500

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

Figure 6. Forward Bias Safe Operating Area

Figure 7. Reverse Bias Safe Operating Area

RESISTIVE SWITCHING PERFORMANCE

10

7

t

r

1

0.7

0.5

t

s

5

3

2

0.3

0.2

V

= 250 V

CC

t

d

I

= I

B1 B2

I /I = 20

1

0.7

0.5

V

I

= 250 V

0.1

CC

C B

= I

B1 B2

0.07

0.05

I /I = 20

C B

t

f

0.3

0.2

0.03

0.02

0.2 0.3

0.5 0.7

1

2

3

5

7

10

0.2 0.3

0.5 0.7

1

2

3

5

7

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 9. Turn−Off Time

Figure 8. Turn−On Time

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5

MJB5742T4G

PACKAGE DIMENSIONS

D²PAK 3

CASE 418B−04

ISSUE K

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

C

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE,

NEW STANDARD 418B−04.

E

V

W

−B−

INCHES

DIM MIN MAX

MILLIMETERS

4

MIN

MAX

A

B

C

D

E

F

G

H

J

0.340 0.380

0.380 0.405

0.160 0.190

0.020 0.035

0.045 0.055

0.310 0.350

0.100 BSC

8.64

9.65 10.29

4.06

0.51

1.14

7.87

9.65

4.83

0.89

1.40

8.89

A

S

1

2

3

2.54 BSC

0.080

0.018 0.025

0.090 0.110

0.110

2.03

0.46

2.29

1.32

7.11

5.00 REF

2.00 REF

0.99 REF

2.79

0.64

2.79

1.83

8.13

−T−

SEATING

PLANE

K

W

J

K

L

G

0.052 0.072

0.280 0.320

0.197 REF

0.079 REF

0.039 REF

0.575 0.625 14.60 15.88

0.045 0.055 1.14 1.40

M

N

P

R

S

V

H

D 3 PL

M

T B

0.13 (0.005)

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

VARIABLE

CONFIGURATION

ZONE

N

P

R

U

L

M

F

VIEW W−W

1

2

3

SOLDERING FOOTPRINT*

10.49

8.38

16.155

3.²5^X04

2X

1.016

5.080

PITCH

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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6

MJB5742T4G

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

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Literature Distribution Center for ON Semiconductor

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

MJB5742/D

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7


型号：	MJB5742T4G
厂家：	ONSEMI
描述：	NPN Silicon Power Darlington Transistors NPN硅功率达林顿晶体管晶体晶体管功率双极晶体管达林顿晶体管开关 PC
文件：	总7页 (文件大小：122K)
中文：	中文翻译
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MJB5742T4G [ONSEMI]

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