MJB44H11G [ONSEMI]
Complementary Power Transistors D2PAK for Surface Mount; 互补功率晶体管D2PAK的表面贴装
| 型号： | MJB44H11G |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Power Transistors D2PAK for Surface Mount |
| 文件： | 总6页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJB44H11 (NPN),
MJB45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
D2PAK for Surface Mount
http://onsemi.com
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
SILICON POWER
TRANSISTORS
10 AMPERES,
Features
80 VOLTS, 50 WATTS
• Low Collector−Emitter Saturation Voltage −
MARKING
DIAGRAM
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94 V−0 @ 0.125 in
2
D PAK
B4xH11G
AYWW
CASE 418B
STYLE 1
• ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• Pb−Free Packages are Available
x
A
Y
= 4 or 5
= Assembly Location
= Year
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Symbol
Value
80
Unit
Vdc
Vdc
WW = Work Week
G
V
CEO
= Pb−Free Package
V
5
EB
Collector Current − Continuous
− Peak
I
10
20
Adc
C
ORDERING INFORMATION
†
Device
Package
Shipping
Total Power Dissipation
P
D
D
2
@ T = 25°C
C
50
1.67
W
W/°C
MJB44H11
D PAK
50 Units/Rail
50 Units/Rail
Derate above 25°C
2
MJB44H11G
D PAK
Total Power Dissipation
P
(Pb−Free)
@ T = 25°C
A
2.0
0.016
W
W/°C
2
Derate above 25°C
MJB44H11T4
D PAK
800/Tape & Reel
800/Tape & Reel
2
MJB44H11T4G
D PAK
Operating and Storage Junction
Temperature Range
T , T
J
−55 to 150
°C
stg
(Pb−Free)
2
MJB45H11
D PAK
50 Units/Rail
50 Units/Rail
THERMAL CHARACTERISTICS
2
Characteristic
Symbol
Max
2.5
75
Unit
°C/W
°C/W
MJB45H11G
D PAK
(Pb−Free)
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
2
MJB45H11T4
D PAK
800/Tape & Reel
800/Tape & Reel
R
q
JA
2
MJB45H11T4G
D PAK
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 2
MJB44H11/D
MJB44H11 (NPN), MJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I = 30 mA, I = 0)
V
CEO(sus)
80
−
−
−
−
−
Vdc
mA
C
B
Collector Cutoff Current (V = Rated V
, V = 0)
I
I
10
50
CE
CEO
BE
CES
EBO
Emitter Cutoff Current (V = 5 Vdc)
−
mA
EB
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (I = 8 Adc, I = 0.4 Adc)
V
V
−
−
−
−
−
−
1.0
1.5
−
Vdc
Vdc
−
C
B
CE(sat)
Base−Emitter Saturation Voltage (I = 8 Adc, I = 0.8 Adc)
C
B
BE(sat)
DC Current Gain (V = 1 Vdc, I = 2 Adc)
h
FE
60
40
CE
C
DC Current Gain (V = 1 Vdc, I = 4 Adc)
−
CE
C
DYNAMIC CHARACTERISTICS
Collector Capacitance (V = 10 Vdc, f
= 1 MHz)
C
cb
pF
CB
test
MJB44H11
MJB45H11
−
−
130
230
−
−
Gain Bandwidth Product (I = 0.5 Adc, V = 10 Vdc, f = 20 MHz)
f
MHz
C
CE
T
MJB44H11
MJB45H11
−
−
50
40
−
−
SWITCHING TIMES
Delay and Rise Times(I = 5 Adc, I = 0.5 Adc)
t + t
r
ns
ns
ns
C
B1
d
MJB44H11
MJB45H11
−
−
300
135
−
−
Storage Time(I = 5 Adc, I = I = 0.5 Adc)
t
s
C
B1
B2
MJB44H11
MJB45H11
−
−
500
500
−
−
Fall Time(I = 5 Adc, I = I = 0.5 Adc)
t
f
C
B1
B2
MJB44H11
MJB45H11
−
−
140
100
−
−
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
0.07
0.05
R
= 1.56°C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
2
1
T
− T = P
C
Z
q
(pk) JC(t)
0.01
J(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.05 0.1
0.01
0.01
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
100
200
500
1.0 k
0.02
Figure 1. Thermal Response
http://onsemi.com
2
MJB44H11 (NPN), MJB45H11 (PNP)
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I − V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
50
30
20
C
CE
1.0 ms
100 ms
10 ms
10
5.0
3.0
2.0
The data of Figure 2 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
= 150°C; T is
J(pk)
C
T
≤ 70° C
dc
C
1.0 ms
DUTY CYCLE ≤ 50%
1.0
0.5
J(pk)
v 150°C. T
may be calculated from the data in
J(pk)
0.3
0.2
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
T
A
T
C
3.0 60
2.0 40
T
C
T
A
1.0 20
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 3. Power Derating
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3
MJB44H11 (NPN), MJB45H11 (PNP)
1000
100
10
1000
V
= 4 V
1 V
CE
V
= 4 V
CE
100
V
= 1 V
CE
T = 25°C
J
T = 25°C
J
10
0.1
0.1
1
10
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 4. MJB44H11 DC Current Gain
Figure 5. MJB45H11 DC Current Gain
1000
1000
100
10
T = 125°C
J
25°C
−ꢀ40°C
T = 125°C
J
25°C
100
−ꢀ40°C
V
= 1 V
CE
V
= 1 V
CE
10
0.1
1
10
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 6. MJB44H11 Current Gain
versus Temperature
Figure 7. MJB45H11 Current Gain
versus Temperature
1.2
1
1.2
1
V
V
BE(sat)
BE(sat)
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
I /I = 10
C B
I /I = 10
C B
T = 25°C
J
T = 25°C
J
V
CE(sat)
V
CE(sat)
0.1
1
10
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 8. MJB44H11 On−Voltages
Figure 9. MJB45H11 On−Voltages
http://onsemi.com
4
MJB44H11 (NPN), MJB45H11 (PNP)
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
K
W
K
L
J
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
VARIABLE
CONFIGURATION
ZONE
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MJB44H11 (NPN), MJB45H11 (PNP)
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MJB44H11/D
相关型号：
MJB6488T4
TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, CASE 418B-04, D2PAK-3, BIP General Purpose Power
ONSEMI
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