MCH6351 [ONSEMI]

P-Channel Power MOSFET;
MCH6351
型号: MCH6351
厂家: ONSEMI    ONSEMI
描述:

P-Channel Power MOSFET

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Ordering number : ENA2198  
MCH6351  
P-Channel Power MOSFET  
-12V, -9A, 16.9m, Single MCPH6  
http://onsemi.com  
Features  
On-resistance R (on)1=14m(typ.)  
Halogen free compliance  
1.5V drive  
Protection diode in  
DS  
Specifications  
Absolute Maximum Ratings at Ta = 25°C  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
DSS  
-12  
V
GSS  
10  
V
I
I
-9  
-36  
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
PW10μs, duty cycle1%  
When mounted on ceramic substrate (1500mm2×0.8mm)  
A
DP  
P
D
1.5  
W
°C  
°C  
Tch  
150  
Tstg  
- 55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Ordering & Package Information  
Package Dimensions  
unit : mm (typ)  
Device  
Package  
Shipping  
note  
7022A-009  
Pb-Free  
and  
Halogen Free  
MCPH6  
SC-88,SOT-363  
3,000  
pcs. / reel  
MCH6351-TL-W  
MCH6351-TL-W  
2.0  
0.15  
6
5
4
3
Packing Type: TL  
Marking  
0 to 0.02  
NA  
1
2
0.65  
0.3  
TL  
1: Drain  
2: Drain  
3: Gate  
4: Source  
5: Drain  
6: Drain  
1
2
3
4
Electrical Connection  
1, 2, 5, 6  
6
5
MCPH6  
3
4
Semiconductor Components Industries, LLC, 2013  
July, 2013  
70313 TKIM TC-00002939 No.A2198-1/6  
MCH6351  
Electrical Characteristics at Ta = 25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
-12  
max  
Drain to Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate to Source Leakage Current  
Cutoff Voltage  
V(  
)
I
=-1mA, V =0V  
V
μA  
μA  
V
BR DSS  
D
GS  
I
I
V
V
V
V
=-12V, V =0V  
-1  
DSS  
GSS  
(off)  
DS  
GS  
DS  
DS  
GS  
=±8V, V =0V  
DS  
10  
V
=-6V, I =-1mA  
-0.4  
-1.3  
GS  
D
Forward Transfer Admittance  
| yfs |  
=-6V, I =-4.5A  
16.5  
14  
S
D
R
R
R
R
(on)1  
DS  
(on)2  
DS  
(on)3  
DS  
(on)4  
DS  
I
I
I
I
=-4.5A, V =-4.5V  
GS  
16.9  
24  
mΩ  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
D
D
D
D
=-2.0A, V =-2.5V  
GS  
19  
Static Drain to Source On-State  
Resistance  
=-1.0A, V =-1.8V  
GS  
28  
40  
=-1.0A, V =-1.5V  
GS  
37  
74  
Input Capacitance  
Ciss  
2200  
350  
320  
12.3  
89  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=-6V, f=1MHz  
DS  
t (on)  
d
t
ns  
r
See specified Test Circuit.  
Turn-OFF Delay Time  
Fall Time  
t (off)  
260  
122  
20.5  
4.2  
ns  
d
t
ns  
f
Total Gate Charge  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
Diode Forward Voltage  
Qg  
nC  
nC  
nC  
V
Qgs  
Qgd  
V
=-6V, V =-4.5V, I =-9A  
DS GS  
D
3.2  
V
I =-9A, V =0V  
GS  
-0.83  
-1.2  
SD  
S
Switching Time Test Circuit  
No.A2198-2/6  
MCH6351  
No.A2198-3/6  
MCH6351  
No.A2198-4/6  
MCH6351  
Outline Drawing  
MCH6351-TL-W  
Land Pattern Example  
Mass (g) Unit  
Unit: mm  
0.008  
mm  
* For reference  
0.4  
0.65 0.65  
No.A2198-5/6  
MCH6351  
Note on usage : Since the MCH6351 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No.A2198-6/6  

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