MCH6351-TL-W [ONSEMI]
P-Channel Power MOSFET;型号: | MCH6351-TL-W |
厂家: | ONSEMI |
描述: | P-Channel Power MOSFET |
文件: | 总6页 (文件大小:379K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA2198
MCH6351
P-Channel Power MOSFET
-12V, -9A, 16.9mΩ, Single MCPH6
http://onsemi.com
Features
• On-resistance R (on)1=14mΩ(typ.)
• Halogen free compliance
• 1.5V drive
• Protection diode in
DS
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
DSS
-12
V
GSS
10
V
I
I
-9
-36
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1500mm2×0.8mm)
A
DP
P
D
1.5
W
°C
°C
Tch
150
Tstg
- 55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
Device
Package
Shipping
note
7022A-009
Pb-Free
and
Halogen Free
MCPH6
SC-88,SOT-363
3,000
pcs. / reel
MCH6351-TL-W
MCH6351-TL-W
2.0
0.15
6
5
4
3
Packing Type: TL
Marking
0 to 0.02
NA
1
2
0.65
0.3
TL
1: Drain
2: Drain
3: Gate
4: Source
5: Drain
6: Drain
1
2
3
4
Electrical Connection
1, 2, 5, 6
6
5
MCPH6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
70313 TKIM TC-00002939 No.A2198-1/6
MCH6351
Electrical Characteristics at Ta = 25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
-12
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V(
)
I
=-1mA, V =0V
V
μA
μA
V
BR DSS
D
GS
I
I
V
V
V
V
=-12V, V =0V
-1
DSS
GSS
(off)
DS
GS
DS
DS
GS
=±8V, V =0V
DS
10
V
=-6V, I =-1mA
-0.4
-1.3
GS
D
Forward Transfer Admittance
| yfs |
=-6V, I =-4.5A
16.5
14
S
D
R
R
R
R
(on)1
DS
(on)2
DS
(on)3
DS
(on)4
DS
I
I
I
I
=-4.5A, V =-4.5V
GS
16.9
24
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
D
D
D
D
=-2.0A, V =-2.5V
GS
19
Static Drain to Source On-State
Resistance
=-1.0A, V =-1.8V
GS
28
40
=-1.0A, V =-1.5V
GS
37
74
Input Capacitance
Ciss
2200
350
320
12.3
89
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=-6V, f=1MHz
DS
t (on)
d
t
ns
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
260
122
20.5
4.2
ns
d
t
ns
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qg
nC
nC
nC
V
Qgs
Qgd
V
=-6V, V =-4.5V, I =-9A
DS GS
D
3.2
V
I =-9A, V =0V
GS
-0.83
-1.2
SD
S
Switching Time Test Circuit
No.A2198-2/6
MCH6351
No.A2198-3/6
MCH6351
No.A2198-4/6
MCH6351
Outline Drawing
MCH6351-TL-W
Land Pattern Example
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
0.65 0.65
No.A2198-5/6
MCH6351
Note on usage : Since the MCH6351 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No.A2198-6/6
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