MC74VHC32_14 [ONSEMI]

Quad 2-Input OR Gate;
MC74VHC32_14
型号: MC74VHC32_14
厂家: ONSEMI    ONSEMI
描述:

Quad 2-Input OR Gate

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中文:  中文翻译
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MC74VHC32  
Quad 2-Input OR Gate  
The MC74VHC32 is an advanced high speed CMOS 2−input OR  
gate fabricated with silicon gate CMOS technology. It achieves high  
speed operation similar to equivalent Bipolar Schottky TTL while  
maintaining CMOS low power dissipation.  
The internal circuit is composed of three stages, including a buffer  
output which provides high noise immunity and stable output. The  
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V  
systems to 3.0 V systems.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Features  
14  
14  
High Speed: t = 3.8 ns (Typ) at V = 5.0 V  
PD  
CC  
1
VHC32G  
AWLYWW  
Low Power Dissipation: I = 2.0 mA (Max) at T = 25°C  
CC  
A
SOIC−14  
D SUFFIX  
CASE 751A  
High Noise Immunity: V  
= V  
= 28% V  
NIL CC  
NIH  
Power Down Protection Provided on Inputs  
Balanced Propagation Delays  
1
Designed for 2.0 V to 5.5 V Operating Range  
Low Noise: V  
= 0.8 V (Max)  
14  
14  
OLP  
VHC  
32  
ALYW ꢀ  
Pin and Function Compatible with Other Standard Logic Families  
Latchup Performance Exceeds 300 mA  
1
TSSOP  
ESD Performance:  
1
DT SUFFIX  
CASE 948G  
Human Body Model > 2000 V;  
Machine Model > 200 V  
Chip Complexity: 48 FETs or 12 Equivalent Gates  
These Devices are Pb−Free and are RoHS Compliant  
A
= Assembly Location  
= Year  
WL, L = Wafer Lot  
Y
WW, W = Work Week  
G or = Pb−Free Package  
1
A1  
3
Y1  
2
B1  
4
(Note: Microdot may be in either location)  
A2  
6
Y2  
5
B2  
FUNCTION TABLE  
Y = A+B  
9
Inputs  
Output  
A3  
8
Y3  
10  
A
B
Y
B3  
12  
L
L
L
H
L
L
H
H
H
A4  
11  
Y4  
13  
H
H
B4  
H
Figure 1. Logic Diagram  
V
B4  
13  
A4  
12  
Y4  
11  
B3  
10  
A3  
9
Y3  
8
CC  
14  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
1
2
3
4
5
6
7
A1  
B1  
Y1  
A2  
B2  
Y2 GND  
(Top View)  
Figure 2. Pinout: 14−Lead Packages  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
September, 2014 − Rev. 7  
MC74VHC32/D  
MC74VHC32  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high−impedance cir-  
V
DC Supply Voltage  
DC Input Voltage  
–0.5 to +7.0  
–0.5 to +7.0  
CC  
V
V
in  
V
DC Output Voltage  
Input Diode Current  
Output Diode Current  
–0.5 to V +0.5  
V
out  
IK  
CC  
I
−20  
20  
mA  
mA  
mA  
mA  
mW  
cuit. For proper operation, V and  
in  
I
OK  
V
out  
should be constrained to the  
range GND v (V or V ) v V  
.
I
DC Output Current, per Pin  
DC Supply Current, V and GND Pins  
25  
in  
out  
CC  
out  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
I
50  
CC  
level (e.g., either GND or V ).  
P
D
Power Dissipation in Still Air,  
SOIC Package  
TSSOP Package  
500  
450  
CC  
Unused outputs must be left open.  
T
stg  
Storage Temperature  
–65 to +150  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of  
these limits are exceeded, device functionality should not be assumed, damage may occur and  
reliability may be affected.  
†Derating − SOIC Package: – 7 mW/°C from 65° to 125°C  
TSSOP Package: − 6.1 mW/°C from 65° to 125°C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
0
Max  
5.5  
Unit  
V
V
CC  
DC Supply Voltage  
DC Input Voltage  
V
in  
5.5  
V
V
DC Output Voltage  
Operating Temperature  
Input Rise and Fall Time  
0
V
V
out  
CC  
T
−40  
+125  
°C  
ns/V  
A
t , t  
r
V
CC  
V
CC  
= 3.3 V 0.3 V  
= 5.0 V 0.5 V  
0
0
100  
20  
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
DC ELECTRICAL CHARACTERISTICS  
T
A
= 25°C  
T = −40°C to 125°C  
A
V
CC  
V
Min  
Typ  
Max  
Min  
Max  
Symbol  
Parameter  
Test Conditions  
Unit  
V
IH  
Minimum High−Level  
Input Voltage  
2.0  
3.0 to 5.5  
1.50  
1.50  
V
V
x 0.7  
V
x 0.7  
CC  
CC  
V
Maximum Low−Level  
Input Voltage  
2.0  
3.0 to 5.5  
0.50  
0.50  
V
V
IL  
V
x 0.3  
V
x 0.3  
CC  
CC  
V
OH  
Minimum High−Level  
Output Voltage  
V
= V or V  
= −50 mA  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
in  
IH  
IL  
I
OH  
V
in  
= V or V  
IH  
IL  
3.0  
4.5  
2.58  
3.94  
2.48  
3.80  
I
I
= −4.0 mA  
= −8.0 mA  
OH  
OH  
V
OL  
Maximum Low−Level  
Output Voltage  
V
= V or V  
= 50 mA  
2.0  
3.0  
4.5  
0.0  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
in  
IH  
IL  
I
OL  
V
in  
= V or V  
IH  
IL  
3.0  
4.5  
0.36  
0.36  
0.44  
0.44  
I
OL  
I
OL  
= 4.0 mA  
= 8.0 mA  
I
Maximum Input  
Leakage Current  
V
V
= 5.5 V or GND  
0 to 5.5  
5.5  
0.1  
2.0  
1.0  
mA  
mA  
in  
in  
I
Maximum Quiescent  
Supply Current  
= V or GND  
20.0  
CC  
in  
CC  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
http://onsemi.com  
2
MC74VHC32  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
T
A
= 25°C  
T = −40°C to 125°C  
A
Min  
Typ  
Max  
Min  
Max  
Symbol  
Parameter  
Test Conditions  
= 3.3 0.3 V C = 15 pF  
Unit  
t
,
Maximum Propagation  
Delay,  
A or B to Y  
V
V
5.5  
8.0  
7.9  
11.4  
1.0  
1.0  
9.5  
13.0  
ns  
PLH  
CC  
L
t
C = 50 pF  
L
PHL  
= 5.0 0.5 V C = 15 pF  
3.8  
5.3  
5.5  
7.5  
1.0  
1.0  
6.5  
8.5  
CC  
L
C = 50 pF  
L
C
Maximum Input Capacitance  
4
10  
10  
pF  
pF  
in  
Typical @ 25°C, V = 5.0 V  
CC  
14  
C
Power Dissipation Capacitance (Note 1)  
PD  
1. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
no−load dynamic power consumption; P = C V  
) = C V f + I /4 (per gate). C is used to determine the  
CC(OPR  
PD CC in CC PD  
2
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
NOISE CHARACTERISTICS (Input t = t = 3.0 ns, C = 50 pF, V = 5.0 V)  
r
f
L
CC  
T
A
= 25°C  
Typ  
0.3  
Max  
Symbol  
Characteristic  
Unit  
V
V
OLP  
Quiet Output Maximum Dynamic V  
0.8  
−0.8  
3.5  
OL  
V
OLV  
Quiet Output Minimum Dynamic V  
−0.3  
V
OL  
V
IHD  
Minimum High Level Dynamic Input Voltage  
Maximum Low Level Dynamic Input Voltage  
V
V
ILD  
1.5  
V
TEST  
POINT  
V
CC  
A or B  
50%  
OUTPUT  
DEVICE  
UNDER  
TEST  
GND  
C *  
L
t
t
PLH  
PHL  
Y
50% V  
CC  
*Includes all probe and jig capacitance  
Figure 3. Switching Waveforms  
Figure 4. Test Circuit  
INPUT  
Figure 5. Input Equivalent Circuit  
http://onsemi.com  
3
 
MC74VHC32  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74VHC32DR2G  
SOIC−14  
(Pb−Free)  
2500 Units / Tape & Reel  
96 Units / Rail  
MC74VHC32DTG  
TSSOP−14  
(Pb−Free)  
MC74VHC32DTR2G  
TSSOP−14  
(Pb−Free)  
2500 Units / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
4
MC74VHC32  
PACKAGE DIMENSIONS  
SOIC−14  
CASE 751A−03  
ISSUE K  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C
A
DETAIL A  
h
X 45ꢁ  
A
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
M
A1  
e
M
0 ꢁ  
7ꢁ  
0 ꢁ  
7ꢁ  
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
6.50  
14X  
1.18  
1
1.27  
PITCH  
14X  
0.58  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
5
MC74VHC32  
PACKAGE DIMENSIONS  
TSSOP−14  
CASE 948G  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
14X K REF  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T
U
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
S
0.15 (0.006) T  
U
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
L
N
−U−  
PIN 1  
IDENT.  
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
S
K
0.15 (0.006) T  
U
A
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
−V−  
A
B
C
D
F
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION N−N  
G
H
J
J1  
K
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
−W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0 ꢁ  
8 ꢁ  
0 ꢁ  
8 ꢁ  
SEATING  
−T−  
H
G
DETAIL E  
D
PLANE  
SOLDERING FOOTPRINT  
7.06  
1
0.65  
PITCH  
14X  
0.36  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
ON Semiconductor and the  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
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For additional information, please contact your local  
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MC74VHC32/D  

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