MC14015BF [ONSEMI]

Dual 4-Bit Static Shift Register; 双4位静态移位寄存器
MC14015BF
型号: MC14015BF
厂家: ONSEMI    ONSEMI
描述:

Dual 4-Bit Static Shift Register
双4位静态移位寄存器

移位寄存器
文件: 总12页 (文件大小:254K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
The MC14015B dual 4–bit static shift register is constructed with  
MOS P–channel and N–channel enhancement mode devices in a  
single monolithic structure. It consists of two identical, independent  
4–state serial–input/parallel–output registers. Each register has  
independent Clock and Reset inputs with a single serial Data input.  
The register states are type D master–slave flip–flops. Data is shifted  
from one stage to the next during the positive–going clock transition.  
Each register can be cleared when a high level is applied on the Reset  
line. These complementary MOS shift registers find primary use in  
buffer storage and serial–to–parallel conversion where low power  
dissipation and/or noise immunity is desired.  
http://onsemi.com  
MARKING  
DIAGRAMS  
16  
PDIP–16  
P SUFFIX  
CASE 648  
MC14015BCP  
AWLYYWW  
1
Diode Protection on All Inputs  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Logic Edge–Clocked Flip–Flop Design —  
16  
1
SOIC–16  
D SUFFIX  
CASE 751B  
14015B  
AWLYWW  
Logic state is retained indefinitely with clock level either high or low;  
information is transferred to the output only on the positive going  
edge of the clock pulse.  
16  
Capable of Driving Two Low–power TTL Loads or One Low–power  
Schottky TTL Load Over the Rated Temperature Range.  
TSSOP–16  
DT SUFFIX  
CASE 948F  
14  
015B  
ALYW  
1
MAXIMUM RATINGS (Voltages Referenced to V ) (Note 2.)  
SS  
16  
1
Symbol  
Parameter  
Value  
Unit  
V
SOEIAJ–16  
F SUFFIX  
CASE 966  
MC14015B  
AWLYWW  
V
DD  
DC Supply Voltage Range  
0.5 to +18.0  
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V + 0.5  
V
DD  
A
= Assembly Location  
I , I  
in out  
Input or Output Current  
(DC or Transient) per Pin  
±10  
mA  
WL or L = Wafer Lot  
YY or Y = Year  
P
D
Power Dissipation,  
500  
mW  
WW or W = Work Week  
per Package (Note 3.)  
T
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
A
ORDERING INFORMATION  
T
stg  
Device  
Package  
PDIP–16  
SOIC–16  
Shipping  
T
Lead Temperature  
L
(8–Second Soldering)  
MC14015BCP  
MC14015BD  
2000/Box  
48/Rail  
2. Maximum Ratings are those values beyond which damage to the device  
may occur.  
3. Temperature Derating:  
MC14015BDR2  
SOIC–16 2500/Tape & Reel  
TSSOP–16 2000/Tape & Reel  
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125 C  
MC14015BDT  
MC14015BF  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
SOEIAJ–16  
SOEIAJ–16  
See Note 1.  
See Note 1.  
high–impedancecircuit. For proper operation, V and V should be constrained  
in  
out  
MC14015BFEL  
to the range V  
(V or V  
in  
)
V
DD  
.
SS  
out  
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,  
either V or V ). Unused outputs must be left open.  
1. For ordering information on the EIAJ version of  
the SOIC packages, please contact your local  
ON Semiconductor representative.  
SS  
DD  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
March, 2000 – Rev. 3  
MC14015B/D  
MC14015B  
TRUTH TABLE  
C
D
0
R
0
0
0
1
Q0  
Q
n
0
Q
Q
n–1  
n–1  
1
1
X
X
No Change  
0
No Change  
0
X
X = Don’t Care  
Q = Q0, Q1, Q2, or Q3, as applicable.  
n
Q
= Output of prior stage.  
n–1  
PIN ASSIGNMENT  
C
1
2
3
4
5
6
7
8
16  
15  
14  
V
DD  
B
Q3  
B
D
B
Q2  
A
R
B
Q1  
A
13 Q0  
B
Q0  
A
12 Q1  
B
R
A
11 Q2  
B
D
A
10 Q3  
A
V
SS  
9
C
A
BLOCK DIAGRAM  
Q0  
5
7
D
Q1  
4
Q2  
3
9
6
C
R Q3  
10  
Q0  
13  
12  
11  
2
15  
D
Q1  
Q2  
C
1
Q3  
R
14  
V
V
= PIN 16  
= PIN 8  
DD  
SS  
http://onsemi.com  
2
MC14015B  
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V  
)
SS  
– 55 C  
25 C  
125 C  
V
Vdc  
DD  
(4.)  
Characteristic  
Output Voltage  
Symbol  
Unit  
Min  
Max  
Min  
Typ  
Max  
Min  
Max  
“0” Level  
“1” Level  
“0” Level  
V
OL  
5.0  
10  
15  
0.05  
0.05  
0.05  
0
0
0
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
Vdc  
V
in  
= V or 0  
DD  
V
OH  
5.0  
10  
15  
4.95  
9.95  
14.95  
4.95  
9.95  
14.95  
5.0  
10  
15  
4.95  
9.95  
14.95  
Vdc  
Vdc  
V
in  
= 0 or V  
DD  
Input Voltage  
(V = 4.5 or .05 Vdc)  
V
IL  
5.0  
10  
15  
1.5  
3.0  
4.0  
2.25  
4.50  
6.75  
1.5  
3.0  
4.0  
1.5  
3.0  
4.0  
O
(V = 9.0 or 1.0 Vdc)  
O
(V = 13.5 or 1.5 Vdc)  
O
(V = 0.5 or 4.5 Vdc) “1” Level  
V
IH  
5.0  
10  
15  
3.5  
7.0  
11  
3.5  
7.0  
11  
2.75  
5.50  
8.25  
3.5  
7.0  
11  
Vdc  
O
(V = 1.0 or 9.0 Vdc)  
O
(V = 1.5 or 13.5 Vdc)  
O
Output Drive Current  
I
mAdc  
OH  
(V = 2.5 Vdc)  
Source  
Sink  
5.0  
5.0  
10  
– 3.0  
– 0.64  
– 1.6  
– 4.2  
– 2.4  
– 0.51  
– 1.3  
– 3.4  
– 4.2  
– 0.88  
– 2.25  
– 8.8  
– 1.7  
– 0.36  
– 0.9  
– 2.4  
OH  
(V = 4.6 Vdc)  
OH  
(V = 9.5 Vdc)  
OH  
(V = 13.5 Vdc)  
OH  
15  
(V = 0.4 Vdc)  
I
OL  
5.0  
10  
15  
0.64  
1.6  
4.2  
0.51  
1.3  
3.4  
0.88  
2.25  
8.8  
0.36  
0.9  
2.4  
mAdc  
OL  
(V = 0.5 Vdc)  
OL  
(V = 1.5 Vdc)  
OL  
Input Current  
Input Capacitance  
I
15  
± 0.1  
±0.00001  
± 0.1  
± 1.0  
µAdc  
in  
C
5.0  
7.5  
pF  
in  
(V = 0)  
in  
Quiescent Current  
(Per Package)  
I
5.0  
10  
15  
5.0  
10  
20  
0.005  
0.010  
0.015  
5.0  
10  
20  
150  
300  
600  
µAdc  
µAdc  
DD  
(5.) (6.)  
Total Supply Current  
I
T
5.0  
10  
15  
I = (1.2 µA/kHz)f + I  
T
I = (2.4 µA/kHz)f + I  
T
I = (3.6 µA/kHz)f + I  
T
DD  
DD  
DD  
(Dynamic plus Quiescent,  
Per Package)  
(C = 50 pF on all outputs, all  
L
buffers switching)  
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.  
5. The formulas given are for the typical characteristics only at 25 C.  
6. To calculate total supply current at loads other than 50 pF:  
I (C ) = I (50 pF) + (C – 50) Vfk  
T
L
T
L
where: I is in µA (per package), C in pF, V = (V – V ) in volts, f in kHz is input frequency, and k = 0.002.  
T
L
DD  
SS  
http://onsemi.com  
3
MC14015B  
SWITCHING CHARACTERISTICS (7.) (C = 50 pF, T = 25 C)  
L
A
(8.)  
Characteristic  
Symbol  
V
DD  
Min  
Typ  
Max  
Unit  
Output Rise and Fall Time  
t
,
ns  
TLH  
t
t
t
, t  
= (1.5 ns/pF) C + 25 ns  
t
THL  
5.0  
10  
15  
100  
50  
40  
200  
100  
80  
TLH THL  
L
, t  
= (0.75 ns/pF) C + 12.5 ns  
TLH THL  
L
, t  
= (0.55 ns/pF) C + 9.5 ns  
L
TLH THL  
Propagation Delay Time  
Clock, Data to Q  
t
t
,
ns  
PLH  
PHL  
t
t
t
, t  
= (1.7 ns/pF) C + 225 ns  
= (0.66 ns/pF) C + 92 ns  
L
= (0.5 ns/pF) C + 65 ns  
L
5.0  
10  
15  
310  
125  
90  
750  
250  
170  
PLH PHL  
L
, t  
PLH PHL  
, t  
PLH PHL  
Reset to Q  
t
t
t
, t  
= (1.7 ns/pF) C + 375 ns  
= (0.66 ns/pF) C + 147 ns  
L
= (0.5 ns/pF) C + 95 ns  
L
5.0  
10  
15  
460  
180  
120  
750  
250  
170  
PLH PHL  
L
, t  
PLH PHL  
, t  
PLH PHL  
Clock Pulse Width  
t
5.0  
10  
15  
400  
175  
135  
185  
85  
55  
ns  
MHz  
µs  
WH  
Clock Pulse Frequency  
Clock Pulse Rise and Fall Times  
Reset Pulse Width  
f
cl  
5.0  
10  
15  
2.0  
6.0  
7.5  
1.5  
3.0  
3.75  
t
, t  
5.0  
10  
15  
15  
5
4
TLH THL  
t
5.0  
10  
15  
400  
160  
120  
200  
80  
60  
ns  
WH  
Setup Time  
t
su  
5.0  
10  
15  
350  
100  
75  
100  
50  
40  
ns  
7. The formulas given are for typical characteristics only at 25 C.  
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.  
V
DD  
0.01 µF  
CERAMIC  
I
PULSE  
GENERATOR  
2
D
500 µF  
V
DD  
Q0  
Q1  
Q2  
Q3  
D
C
C
L
PULSE  
GENERATOR  
1
C
L
C
L
R
C
L
V
SS  
1
f
CLOCK  
DATA  
50%  
Figure 1. Power Dissipation Test Circuit and Waveform  
http://onsemi.com  
4
MC14015B  
t
t
TLH  
THL  
V
DD  
DATA  
INPUT  
90%  
50%  
10%  
0 V  
t
su  
V
t–  
DD  
t
t
THL  
TLH  
PULSE  
GENERATOR  
2
V
DD  
90%  
50%  
10%  
D
C
Q0  
Q1  
Q2  
Q3  
CLOCK  
INPUT  
C
L
0 V  
SYNC  
C
L
t
t
WL  
WH  
PULSE  
GENERATOR  
1
C
L
t
t
PHL  
PLH  
R
C
L
90%  
50%  
10%  
V
SS  
Q0  
t
t
= t  
= 50% Duty Cycle  
WH  
20 ns  
THL  
WL  
t
t
THL  
TLH  
= t  
TLH  
Figure 2. Switching Test Circuit and Waveforms  
V
DD  
PULSE  
GENERATOR  
2
V
DD  
CLOCK  
INPUT  
D
C
50%  
Q0  
Q1  
Q2  
Q3  
0 V  
C
L
t
su  
SYNC  
C
L
PULSE  
GENERATOR  
1
C
L
t
h
R
V
C
L
DD  
DATA  
INPUT  
50%  
V
SS  
0 V  
Figure 3. Setup and Hold Time Test Circuit and Waveforms  
http://onsemi.com  
5
MC14015B  
CIRCUIT SCHEMATICS  
http://onsemi.com  
6
MC14015B  
LOGIC DIAGRAMS  
SINGLE BIT  
Q
C
C
C
TO D OF  
NEXT BIT  
DATA  
C
C
C
C
C
RESET  
C
C
C
COMPLETE DEVICE  
5
4
3
10  
Q0  
Q1  
Q2  
Q3  
DATA INPUT BUFFER  
CLOCK INPUT BUFFER  
D
7
D
C
Q
Q
D
C
Q
Q
D
C
Q
Q
D
C
Q
Q
R
R
R
R
C
R
9
6
13  
Q0  
12  
Q1  
11  
2
RESET INPUT BUFFER  
DATA INPUT BUFFER  
Q2  
Q3  
D
15  
D
C
Q
Q
D
C
Q
Q
D
C
Q
Q
D
C
Q
Q
CLOCK INPUT BUFFER  
RESET INPUT BUFFER  
R
R
R
R
C
R
1
V
V
= PIN 16  
= PIN 8  
DD  
SS  
14  
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7
MC14015B  
PACKAGE DIMENSIONS  
PDIP–16  
P SUFFIX  
PLASTIC DIP PACKAGE  
CASE 648–08  
ISSUE R  
NOTES:  
–A–  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEADS WHEN  
FORMED PARALLEL.  
16  
1
9
8
B
S
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.  
5. ROUNDED CORNERS OPTIONAL.  
INCHES  
DIM MIN MAX  
0.740 0.770 18.80 19.55  
MILLIMETERS  
MIN MAX  
F
A
B
C
D
F
G
H
J
K
L
M
S
C
L
0.250 0.270  
0.145 0.175  
0.015 0.021  
6.35  
3.69  
0.39  
1.02  
6.85  
4.44  
0.53  
1.77  
0.040  
0.70  
SEATING  
PLANE  
–T–  
0.100 BSC  
0.050 BSC  
0.008 0.015  
2.54 BSC  
1.27 BSC  
K
M
0.21  
0.38  
3.30  
7.74  
10  
H
J
0.110  
0.295 0.305  
10  
0.020 0.040  
0.130  
2.80  
7.50  
0
G
D 16 PL  
0
0.51  
1.01  
M
M
0.25 (0.010)  
T A  
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8
MC14015B  
PACKAGE DIMENSIONS  
SOIC–16  
D SUFFIX  
PLASTIC SOIC PACKAGE  
CASE 751B–05  
ISSUE J  
–A–  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
16  
1
9
8
–B–  
P 8 PL  
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
M
S
0.25 (0.010)  
B
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
G
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.393  
0.157  
0.068  
0.019  
0.049  
F
A
B
C
D
F
9.80  
3.80  
1.35  
0.35  
0.40  
10.00 0.386  
4.00 0.150  
1.75 0.054  
0.49 0.014  
1.25 0.016  
R X 45  
K
C
G
J
K
M
P
1.27 BSC  
0.050 BSC  
–T–  
SEATING  
PLANE  
0.19  
0.10  
0
0.25 0.008  
0.25 0.004  
0.009  
0.009  
7
J
M
D
16 PL  
7
0
5.80  
0.25  
6.20 0.229  
0.50 0.010  
0.244  
0.019  
M
S
S
0.25 (0.010)  
T B  
A
R
http://onsemi.com  
9
MC14015B  
PACKAGE DIMENSIONS  
TSSOP–16  
DT SUFFIX  
PLASTIC TSSOP PACKAGE  
CASE 948F–01  
ISSUE O  
16X KREF  
M
S
S
0.10 (0.004)  
T U  
V
S
0.15 (0.006) T U  
K
K1  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
16  
9
2X L/2  
Y14.5M, 1982.  
J1  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH. PROTRUSIONS OR GATE BURRS. MOLD  
FLASH OR GATE BURRS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE INTERLEAD  
FLASH OR PROTRUSION. INTERLEAD FLASH OR  
PROTRUSION SHALL NOT EXCEED  
0.25 (0.010) PER SIDE.  
B
–U–  
SECTION N–N  
L
J
PIN 1  
IDENT.  
8
1
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE DETERMINED  
AT DATUM PLANE W.  
N
0.25 (0.010)  
S
0.15 (0.006) T U  
A
M
–V–  
N
F
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
A
B
C
4.90  
4.30  
–––  
5.10 0.193 0.200  
4.50 0.169 0.177  
DETAIL E  
1.20  
––– 0.047  
D
F
G
H
J
J1  
K
K1  
L
0.05  
0.50  
0.65 BSC  
0.18  
0.09  
0.09  
0.19  
0.19  
0.15 0.002 0.006  
0.75 0.020 0.030  
0.026 BSC  
0.28 0.007 0.011  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
–W–  
C
0.10 (0.004)  
DETAIL E  
H
SEATING  
PLANE  
–T–  
D
G
6.40 BSC  
0.252 BSC  
M
0
8
0
8
http://onsemi.com  
10  
MC14015B  
PACKAGE DIMENSIONS  
SOEIAJ–16  
F SUFFIX  
PLASTIC EIAJ SOIC PACKAGE  
CASE 966–01  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
ISSUE O  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD FLASH OR PROTRUSIONS AND ARE  
MEASURED AT THE PARTING LINE. MOLD FLASH  
OR PROTRUSIONS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
L
E
16  
9
8
Q
1
H
E
M
4. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
E
5. THE LEAD WIDTH DIMENSION (b) DOES NOT  
INCLUDE DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)  
TOTAL IN EXCESS OF THE LEAD WIDTH  
DIMENSION AT MAXIMUM MATERIAL CONDITION.  
DAMBAR CANNOT BE LOCATED ON THE LOWER  
RADIUS OR THE FOOT. MINIMUM SPACE  
BETWEEN PROTRUSIONS AND ADJACENT LEAD  
TO BE 0.46 ( 0.018).  
1
L
DETAIL P  
Z
D
VIEW P  
e
MILLIMETERS  
INCHES  
A
DIM MIN  
MAX  
MIN  
–––  
MAX  
0.081  
0.008  
0.020  
0.011  
0.413  
0.215  
c
A
1
–––  
0.05  
0.35  
0.18  
9.90  
5.10  
2.05  
A
0.20 0.002  
0.50 0.014  
0.27 0.007  
10.50 0.390  
5.45 0.201  
b
c
D
E
A
1
b
0.13 (0.005)  
e
1.27 BSC  
0.050 BSC  
0.10 (0.004)  
M
H
7.40  
0.50  
1.10  
0
0.70  
–––  
8.20 0.291  
0.85 0.020  
1.50 0.043  
10  
0.90 0.028  
0.78 –––  
0.323  
0.033  
0.059  
10  
0.035  
0.031  
E
L
L
E
M
Q
0
1
Z
http://onsemi.com  
11  
MC14015B  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
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MC14015B/D  

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