MC10EP56DW [ONSEMI]

10E SERIES, DUAL 2 LINE TO 1 LINE MULTIPLEXER, COMPLEMENTARY OUTPUT, PDSO20, PLASTIC, SOIC-20;
MC10EP56DW
型号: MC10EP56DW
厂家: ONSEMI    ONSEMI
描述:

10E SERIES, DUAL 2 LINE TO 1 LINE MULTIPLEXER, COMPLEMENTARY OUTPUT, PDSO20, PLASTIC, SOIC-20

光电二极管 输出元件 逻辑集成电路
文件: 总12页 (文件大小:89K)
中文:  中文翻译
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MC10EP56, MC100EP56  
3.3V / 5VĄECL Dual  
Differential 2:1 Multiplexer  
The MC10/100EP56 is a dual, fully differential 2:1 multiplexer. The  
differential data path makes the device ideal for multiplexing low  
skew clock or other skew sensitive signals. Multiple V pins are  
provided.  
BB  
http://onsemi.com  
The V pin, an internally generated voltage supply, is available to  
this device only. For single–ended input conditions, the unused  
BB  
MARKING  
DIAGRAMS*  
differential input is connected to V as a switching reference voltage.  
BB  
V
BB  
may also rebias AC coupled inputs. When used, decouple V  
BB  
20  
and V via a 0.01 mF capacitor and limit current sourcing or sinking  
CC  
20  
to 0.5 mA. When not used, V should be left open.  
BB  
XXXX  
EP56  
ALYW  
1
The device features both individual and common select inputs to  
address both data path and random logic applications.  
The 100 Series contains temperature compensation.  
TSSOP–20  
DT SUFFIX  
CASE 948E  
1
360 ps Typical Propagation Delays  
20  
Maximum Frequency > 3 GHz Typical  
PECL Mode Operating Range: V = 3.0 V to 5.5 V  
CC  
20  
MCyyyEP56  
AWLYYWW  
with V = 0 V  
EE  
1
NECL Mode Operating Range: V = 0 V  
CC  
SO–20  
DW SUFFIX  
CASE 751D  
with V = –3.0 V to –5.5 V  
EE  
1
Open Input Default State  
Safety Clamp on Inputs  
Separate and Common Select  
Q Output Will Default LOW with Inputs Open or at V  
xxx  
yyy  
A
= MC10 or 100  
= 10 or 100  
= Assembly Location  
EE  
L, WL = Wafer Lot  
Y, YY = Year  
V Outputs  
BB  
W, WW = Work Week  
*For additional information, see Application Note  
AND8002/D  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC10EP56DT  
TSSOP–20  
75 Units/Rail  
MC10EP56DTR2 TSSOP–20 2500 Tape & Reel  
MC100EP56DT TSSOP–20 75 Units/Rail  
MC100EP56DTR2 TSSOP–20 2500 Tape & Reel  
MC10EP56DW  
SO–20  
SO–20  
SO–20  
SO–20  
38 Units/Rail  
1000 Tape & Reel  
38 Units/Rail  
MC10EP56DWR2  
MC100EP56DW  
MC100EP56DWR2  
1000 Tape & Reel  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 8  
MC10EP56/D  
MC10EP56, MC100EP56  
PIN DESCRIPTION  
PIN  
FUNCTION  
D0a* – D1a*  
D0a* – D1a*  
D0b* – D1b*  
D0b* – D1b*  
SEL0* – SEL1*  
COM_SEL*  
ECL Input Data a  
V
Q0  
Q0 SEL0  
18 17  
V
Q1  
Q1  
V
EE  
SEL1  
CC  
CC  
ECL Input Data a Invert  
20  
19  
16  
15  
14  
13  
12  
11  
ECL Input Data b  
ECL Input Data b Invert  
ECL Indiv. Select Input  
ECL Common Select Input  
Output Reference Voltage  
V
BB0  
, V  
BB1  
1
0
1
0
Q0 – Q1  
Q0 – Q1  
ECL True Outputs  
ECL Inverted Outputs  
V
CC  
V
EE  
Positive Supply  
Negative Supply  
*
Pins will default LOW when left open.  
1
2
3
4
5
6
7
8
9
10  
D0a D0a  
V
D0b D0b D1a D1a  
V
D1b D1b  
BBO  
BB1  
TRUTH TABLE  
Q0,  
Warning: All V and V pins must be externally connected  
Q1,  
Q1  
CC  
EE  
to Power Supply to guarantee proper operation.  
SEL0  
SEL1  
COM_SEL  
Q0  
X
L
L
H
H
X
L
H
H
L
H
L
L
L
L
a
b
b
a
a
a
b
a
a
b
Figure 1. 20–Lead Package (Top View) and Logic Diagram  
ATTRIBUTES  
Characteristics  
Value  
Internal Input Pulldown Resistor  
Internal Input Pullup Resistor  
75 kW  
N/A  
ESD Protection  
Human Body Model  
Machine Model  
Charged Device Model  
> 2 kV  
> 200 V  
> 2 kV  
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1.)  
Level 1  
Flammability Rating  
Oxygen Index  
UL–94 code V–0 A 1/8”  
28 to 34  
Transistor Count  
140 Devices  
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test  
1. For additional information, see Application Note AND8003/D.  
http://onsemi.com  
2
MC10EP56, MC100EP56  
MAXIMUM RATINGS (Note 2.)  
Symbol Parameter  
Condition 1  
= 0 V  
Condition 2  
Rating  
Units  
V
CC  
V
EE  
V
I
PECL Mode Power Supply  
NECL Mode Power Supply  
V
V
6
V
V
EE  
= 0 V  
–6  
CC  
PECL Mode Input Voltage  
NECL Mode Input Voltage  
V
EE  
V
CC  
= 0 V  
= 0 V  
V V  
6
–6  
V
V
I
CC  
EE  
V V  
I
I
Output Current  
Continuous  
Surge  
50  
100  
mA  
mA  
out  
I
V
Sink/Source  
± 0.5  
mA  
°C  
BB  
BB  
TA  
Operating Temperature Range  
–40 to +85  
–65 to +150  
T
Storage Temperature Range  
°C  
stg  
θ
Thermal Resistance (Junction to Ambient)  
0 LFPM  
500 LFPM  
20 TSSOP  
20 TSSOP  
140  
100  
°C/W  
°C/W  
JA  
θ
θ
Thermal Resistance (Junction to Case)  
Thermal Resistance (Junction to Ambient)  
std bd  
20 TSSOP  
23 to 41  
°C/W  
JC  
JA  
0 LFPM  
500 LFPM  
20 SOIC  
20 SOIC  
90  
60  
°C/W  
°C/W  
θ
Thermal Resistance (Junction to Case)  
Wave Solder  
std bd  
20 SOIC  
33 to 35  
265  
°C/W  
°C  
JC  
T
<2 to 3 sec @ 248°C  
sol  
2. Maximum Ratings are those values beyond which device damage may occur.  
10EP DC CHARACTERISTICS, PECL V = 3.3 V, V = 0 V (Note 3.)  
CC  
EE  
–40°C  
Typ  
25°C  
85°C  
Symbol  
Characteristic  
Power Supply Current  
Min  
50  
Max  
75  
Min  
50  
Typ  
63  
Max  
75  
Min  
Typ  
65  
Max  
78  
Unit  
mA  
mV  
mV  
mV  
mV  
mV  
V
I
EE  
61  
55  
V
V
V
V
Output HIGH Voltage (Note 4.)  
Output LOW Voltage (Note 4.)  
2165  
1365  
2090  
1365  
1790  
2.0  
2290  
1490  
2415  
1615  
2415  
1690  
1990  
3.3  
2230  
1430  
2155  
1460  
1855  
2.0  
2355  
1555  
2480  
1680  
2480  
1755  
2055  
3.3  
2290  
1490  
2215  
1490  
1915  
2.0  
2415  
1615  
2540  
1740  
2540  
1815  
2115  
3.3  
OH  
OL  
IH  
Input HIGH Voltage (Single Ended)  
Input LOW Voltage (Single Ended)  
Output Voltage Reference  
IL  
V
BB  
1890  
1955  
2015  
V
Input HIGH Voltage Common Mode  
Range (Differential) (Note 5.)  
IHCMR  
I
I
Input HIGH Current  
150  
150  
150  
µA  
µA  
IH  
Input LOW Current  
SEL, COM_SEL, D  
0.5  
0.5  
0.5  
IL  
D
–150  
–150  
–150  
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The  
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.  
3. Input and output parameters vary 1:1 with V . V can vary +0.3 V to –2.2 V.  
CC  
EE  
4. All loading with 50 ohms to V –2.0 volts.  
CC  
5. V  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
http://onsemi.com  
3
MC10EP56, MC100EP56  
10EP DC CHARACTERISTICS, PECL V = 5.0 V, V = 0 V (Note 6.)  
CC  
EE  
–40°C  
Typ  
25°C  
Typ  
85°C  
Typ  
Symbol  
Characteristic  
Power Supply Current  
Min  
50  
Max  
75  
Min  
50  
Max  
75  
Min  
55  
Max  
78  
Unit  
mA  
mV  
mV  
mV  
mV  
mV  
V
I
EE  
61  
63  
65  
V
V
V
V
V
V
Output HIGH Voltage (Note 7.)  
Output LOW Voltage (Note 7.)  
3865  
3065  
3790  
3065  
3490  
2.0  
3990  
3190  
4115  
3315  
4115  
3390  
3690  
5.0  
3930  
3130  
3855  
3130  
3555  
2.0  
4055  
3255  
4180  
3380  
4180  
3455  
3755  
5.0  
3990  
3190  
3915  
3190  
3615  
2.0  
4115  
3315  
4240  
3440  
4240  
3515  
3815  
5.0  
OH  
OL  
Input HIGH Voltage (Single Ended)  
Input LOW Voltage (Single Ended)  
Output Voltage Reference  
IH  
IL  
3590  
3655  
3715  
BB  
Input HIGH Voltage Common Mode  
Range (Differential) (Note 8.)  
IHCMR  
I
I
Input HIGH Current  
150  
150  
150  
µA  
µA  
IH  
Input LOW Current  
SEL, COM_SEL, D  
0.5  
0.5  
0.5  
IL  
D
–150  
–150  
–150  
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The  
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.  
6. Input and output parameters vary 1:1 with V . V can vary +2.0 V to –0.5 V.  
CC  
EE  
7. All loading with 50 ohms to V –2.0 volts.  
CC  
8. V  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
10EP DC CHARACTERISTICS, NECL V = 0 V, V = 5.5 V to –3.0 V (Note 9.)  
CC  
EE  
–40°C  
Typ  
61  
25°C  
Typ  
63  
85°C  
Typ  
65  
Symbol  
Characteristic  
Power Supply Current  
Min  
50  
Max  
Min  
Max  
Min  
Max  
78  
Unit  
mA  
mV  
mV  
mV  
mV  
mV  
V
I
EE  
75  
50  
75  
55  
V
V
V
V
V
V
Output HIGH Voltage (Note 10.)  
Output LOW Voltage (Note 10.)  
–1135 –1010 –885 –1070 –945  
–820 –1010 –885  
–760  
OH  
–1935 –1810 –1685 –1870 –1745 –1620 –1810 –1685 –1560  
OL  
Input HIGH Voltage (Single Ended)  
Input LOW Voltage (Single Ended)  
Output Voltage Reference  
–1210  
–1935  
–885 –1145  
–1610 –1870  
–820 –1085  
–1545 –1810  
–760  
IH  
–1485  
IL  
–1510 –1410 –1310 –1445 –1345 –1245 –1385 –1285 –1185  
BB  
Input HIGH Voltage Common Mode  
Range (Differential) (Note 11.)  
V
EE  
+2.0  
0.0  
V
EE  
+2.0  
0.0  
V
EE  
+2.0  
0.0  
IHCMR  
I
I
Input HIGH Current  
150  
150  
150  
µA  
µA  
IH  
Input LOW Current SEL, COM_SEL, D  
D
0.5  
–150  
0.5  
–150  
0.5  
–150  
IL  
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The  
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.  
9. Input and output parameters vary 1:1 with V  
.
CC  
10.All loading with 50 ohms to V –2.0 volts.  
CC  
11. V  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
http://onsemi.com  
4
MC10EP56, MC100EP56  
100EP DC CHARACTERISTICS, PECL V = 3.3 V, V = 0 V (Note 12.)  
CC  
EE  
–40°C  
Typ  
25°C  
Typ  
85°C  
Typ  
Symbol  
Characteristic  
Power Supply Current  
Min  
Max  
75  
Min  
50  
Max  
77  
Min  
55  
Max  
80  
Unit  
mA  
mV  
mV  
mV  
mV  
mV  
V
I
EE  
50  
61  
63  
66  
V
V
V
V
V
V
Output HIGH Voltage (Note 13.)  
Output LOW Voltage (Note 13.)  
Input HIGH Voltage (Single Ended)  
Input LOW Voltage (Single Ended)  
Output Voltage Reference  
2155  
1355  
2075  
1355  
1775  
2.0  
2280  
1480  
2405  
1605  
2420  
1675  
1975  
3.3  
2155  
1355  
2075  
1355  
1775  
2.0  
2280  
1480  
2405  
1605  
2420  
1675  
1975  
3.3  
2155  
1355  
2075  
1355  
1775  
2.0  
2280  
1480  
2405  
1605  
2420  
1675  
1975  
3.3  
OH  
OL  
IH  
IL  
1875  
1875  
1875  
BB  
Input HIGH Voltage Common Mode  
Range (Differential) (Note 14.)  
IHCMR  
I
I
Input HIGH Current  
150  
150  
150  
µA  
µA  
IH  
Input LOW Current  
SEL, COM_SEL, D  
0.5  
0.5  
0.5  
IL  
D
–150  
–150  
–150  
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The  
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.  
12.Input and output parameters vary 1:1 with V . V can vary +0.3 V to –2.2 V.  
CC  
EE  
13.All loading with 50 ohms to V –2.0 volts.  
CC  
14.V  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
100EP DC CHARACTERISTICS, PECL V = 5.0 V, V = 0 V (Note 15.)  
CC  
EE  
–40°C  
Typ  
25°C  
Typ  
85°C  
Typ  
Symbol  
Characteristic  
Power Supply Current  
Min  
Max  
75  
Min  
50  
Max  
77  
Min  
55  
Max  
80  
Unit  
mA  
mV  
mV  
mV  
mV  
mV  
V
I
EE  
50  
61  
63  
66  
V
V
V
V
V
V
Output HIGH Voltage (Note 16.)  
Output LOW Voltage (Note 16.)  
Input HIGH Voltage (Single Ended)  
Input LOW Voltage (Single Ended)  
Output Voltage Reference  
3855  
3055  
3775  
3055  
3475  
2.0  
3980  
3180  
4105  
3305  
4120  
3375  
3675  
5.0  
3855  
3055  
3775  
3055  
3475  
2.0  
3980  
3180  
4105  
3305  
4120  
3375  
3675  
5.0  
3855  
3055  
3775  
3055  
3475  
2.0  
3980  
3180  
4105  
3305  
4120  
3375  
3675  
5.0  
OH  
OL  
IH  
IL  
3575  
3575  
3575  
BB  
Input HIGH Voltage Common Mode  
Range (Differential) (Note 17.)  
IHCMR  
I
I
Input HIGH Current  
150  
150  
150  
µA  
µA  
IH  
Input LOW Current  
SEL, COM_SEL, D  
0.5  
0.5  
0.5  
IL  
D
–150  
–150  
–150  
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The  
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.  
15.Input and output parameters vary 1:1 with V . V can vary +2.0 V to –0.5 V.  
CC  
EE  
16.All loading with 50 ohms to V –2.0 volts.  
CC  
17.V  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
http://onsemi.com  
5
MC10EP56, MC100EP56  
100EP DC CHARACTERISTICS, NECL V = 0 V, V = 5.5 V to –3.0 V (Note 18.)  
CC  
EE  
–40°C  
Typ  
61  
25°C  
Typ  
63  
85°C  
Typ  
66  
Symbol  
Characteristic  
Power Supply Current  
Min  
Max  
Min  
Max  
Min  
Max  
Unit  
mA  
mV  
mV  
mV  
mV  
mV  
V
I
EE  
50  
75  
50  
77  
55  
80  
V
V
V
V
V
V
Output HIGH Voltage (Note 19.)  
Output LOW Voltage (Note 19.)  
Input HIGH Voltage (Single Ended)  
Input LOW Voltage (Single Ended)  
Output Voltage Reference  
–1145 –1020 –895 –1145 –1020 –895 –1145 –1020 –895  
–1945 –1820 –1695 –1945 –1820 –1695 –1945 –1820 –1695  
OH  
OL  
–1225  
–1945  
–880 –1225  
–1625 –1945  
–880 –1225  
–1625 –1945  
–880  
IH  
–1625  
IL  
–1525 –1425 –1325 –1525 –1425 –1325 –1525 –1425 –1325  
BB  
Input HIGH Voltage Common Mode  
Range (Differential) (Note 20.)  
V
EE  
+2.0  
0.0  
V
EE  
+2.0  
0.0  
V
EE  
+2.0  
0.0  
IHCMR  
I
I
Input HIGH Current  
150  
150  
150  
µA  
µA  
IH  
Input LOW Current SEL, COM_SEL, D  
D
0.5  
–150  
0.5  
–150  
0.5  
–150  
IL  
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The  
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.  
18.Input and output parameters vary 1:1 with V  
.
CC  
19.All loading with 50 ohms to V –2.0 volts.  
CC  
20.V  
min varies 1:1 with V , V  
max varies 1:1 with V . The V  
range is referenced to the most positive side of the differential  
IHCMR  
EE IHCMR  
CC  
IHCMR  
input signal.  
AC CHARACTERISTICS V = 0 V; V = –3.0 V to –5.5 V or  
V
CC  
= 3.0 V to 5.5 V; V = 0 V (Note 21.)  
CC  
EE  
EE  
–40°C  
25°C  
85°C  
Typ  
> 3  
Symbol  
Characteristic  
Min  
Typ  
Max  
Min  
Typ  
Max  
Min  
Max  
Unit  
f
Maximum Frequency  
(See Figure 2. F /JITTER)  
> 3  
> 3  
GHz  
max  
max  
t
t
,
Propagation Delay to  
Output Differential  
ps  
PLH  
PHL  
D to Q, Q  
SEL to Q, Q  
COM_SEL to Q, Q  
250  
250  
250  
340  
340  
350  
450  
450  
450  
270  
270  
270  
360  
340  
360  
470  
470  
470  
300  
300  
300  
400  
400  
400  
500  
500  
500  
t
Within–Device Skew (Note 22.)  
Device to Device Skew  
50  
100  
200  
50  
100  
200  
50  
100  
200  
ps  
ps  
SKEW  
t
Cycle–to–Cycle Jitter  
0.2  
< 1  
0.2  
< 1  
0.2  
< 1  
JITTER  
(See Figure 2. F  
/JITTER)  
max  
V
Input Voltage Swing (Differential)  
150  
70  
800  
120  
1200  
170  
150  
80  
800  
130  
1200  
180  
150  
100  
800  
150  
1200  
230  
mV  
ps  
PP  
t
r
f
Output Rise/Fall Times  
(20% – 80%)  
Q, Q  
t
21.Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 ohms to V –2.0 V.  
CC  
22.Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays  
are measured from the cross point of the inputs to the cross point of the outputs.  
http://onsemi.com  
6
MC10EP56, MC100EP56  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
10  
9
8
7
6
5
4
3
2
1
(JITTER)  
0
1000  
2000  
3000  
4000  
5000  
6000  
FREQUENCY (MHz)  
Figure 2. Fmax/Jitter  
Q
D
Receiver  
Device  
Driver  
Device  
Qb  
Db  
50  
TT  
50  
W
W
V
TT  
V
V
=
– 2.0 V  
CC  
Figure 3. Typical Termination for Output Driver and Device Evaluation  
(See Application Note AND8020 – Termination of ECL Logic Devices.)  
Resource Reference of Application Notes  
AN1404  
AN1405  
AN1406  
AN1504  
AN1568  
AN1650  
AN1672  
AND8001  
AND8002  
AND8009  
AND8020  
ECLinPS Circuit Performance at Non–Standard VIH Levels  
ECL Clock Distribution Techniques  
Designing with PECL (ECL at +5.0 V)  
Metastability and the ECLinPS Family  
Interfacing Between LVDS and ECL  
Using Wire–OR Ties in ECLinPS Designs  
The ECL Translator Guide  
Odd Number Counters Design  
Marking and Date Codes  
ECLinPS Plus Spice I/O Model Kit  
Termination of ECL Logic Devices  
For an updated list of Application Notes, please see our website at http://onsemi.com.  
http://onsemi.com  
7
MC10EP56, MC100EP56  
PACKAGE DIMENSIONS  
TSSOP–20  
DT SUFFIX  
PLASTIC TSSOP PACKAGE  
CASE 948E–02  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. ICONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,  
PROTRUSIONS OR GATE BURRS. MOLD FLASH  
OR GATE BURRS SHALL NOT EXCEED 0.15  
(0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE INTERLEAD  
FLASH OR PROTRUSION. INTERLEAD FLASH OR  
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)  
PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
20X K REF  
M
S
S
V
0.10 (0.004)  
T
U
S
U
0.15 (0.006) T  
K
K1  
20  
11  
2X L/2  
J J1  
B
L
–U–  
PIN 1  
IDENT  
SECTION N–N  
1
10  
0.25 (0.010)  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
N
7. DIMENSION A AND B ARE TO BE DETERMINED  
AT DATUM PLANE -W-.  
S
0.15 (0.006) T  
U
M
A
–V–  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.260  
0.177  
0.047  
0.006  
0.030  
A
B
6.40  
4.30  
---  
6.60 0.252  
4.50 0.169  
N
C
1.20  
---  
D
0.05  
0.50  
0.15 0.002  
0.75 0.020  
F
F
G
H
0.65 BSC  
0.026 BSC  
DETAIL E  
0.27  
0.09  
0.09  
0.19  
0.19  
0.37  
0.011  
0.015  
0.008  
0.006  
0.012  
0.010  
J
0.20 0.004  
0.16 0.004  
0.30 0.007  
0.25 0.007  
–W–  
J1  
K
C
K1  
L
6.40 BSC  
0.252 BSC  
0
G
D
M
0
8
8
_
_
_
_
H
DETAIL E  
0.100 (0.004)  
–T– SEATING  
PLANE  
http://onsemi.com  
8
MC10EP56, MC100EP56  
PACKAGE DIMENSIONS  
SO–20  
DW SUFFIX  
PLASTIC SOIC PACKAGE  
CASE 751D–05  
ISSUE F  
D
A
q
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
20  
11  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
PROTRUSION.  
E
B
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION SHALL  
BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
1
10  
MILLIMETERS  
DIM MIN  
MAX  
2.65  
0.25  
0.49  
0.32  
12.95  
7.60  
20X B  
A
A1  
B
C
D
E
2.35  
0.10  
0.35  
0.23  
12.65  
7.40  
M
S
S
B
T
0.25  
A
e
1.27 BSC  
A
H
h
10.05  
0.25  
0.50  
0
10.55  
0.75  
0.90  
7
L
SEATING  
PLANE  
q
_
_
18X e  
A1  
C
T
http://onsemi.com  
9
MC10EP56, MC100EP56  
Notes  
http://onsemi.com  
10  
MC10EP56, MC100EP56  
Notes  
http://onsemi.com  
11  
MC10EP56, MC100EP56  
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MC10EP56/D  

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