MAC9MG [ONSEMI]
Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管
| 型号： | MAC9MG |
| 厂家： | 
ONSEMI |
| 描述： | Triacs Silicon Bidirectional Thyristors |
| 文件： | 总6页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAC9D, MAC9M, MAC9N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
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Features
TRIACS
• Blocking Voltage to 800 Volts
• On-State Current Rating of 8.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dv/dt − 500 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating di/dt − 6.5 A/ms minimum at 125°C
• Pb−Free Packages are Available*
8 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
V
DRM,
RRM
MAC9xG
AYWW
(T = −40 to 125°C, Sine Wave,
J
50 to 60 Hz, Gate Open)
MAC9D
400
600
800
TO−220AB
CASE 221A−09
STYLE 4
MAC9M
MAC9N
1
2
3
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T = 100°C)
I
8.0
A
A
T(RMS)
x
A
Y
= D, M, or N
= Assembly Location
= Year
C
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T = 125°C)
J
I
80
TSM
WW = Work Week
G
= Pb−Free Package
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
26
16
A sec
PIN ASSIGNMENT
Peak Gate Power
P
W
W
GM
(Pulse Width ≤ 1.0 ms, T = 80°C)
C
1
Main Terminal 1
Average Gate Power
P
0.35
2
3
4
G(AV)
Main Terminal 2
Gate
(t = 8.3 ms, T = 80°C)
C
Operating Junction Temperature Range
Storage Temperature Range
T
−40 to +125
−40 to +150
°C
°C
J
Main Terminal 2
T
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
MAC9D
TO−220AB
50 Units / Rail
50 Units / Rail
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
MAC9DG
TO−220AB
(Pb−Free)
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
MAC9M
TO−220AB
50 Units / Rail
50 Units / Rail
MAC9MG
TO−220AB
(Pb−Free)
MAC9N
TO−220AB
50 Units / Rail
50 Units / Rail
MAC9NG
TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 3
MAC9/D
MAC9D, MAC9M, MAC9N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
R
R
2.2
62.5
°C/W
q
JC
JA
q
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
260
°C
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
,
mA
DRM
(V = Rated V
, V
DRM
; Gate Open)
RRM
T = 25°C
T = 125°C
J
I
RRM
−
−
−
−
0.01
2.0
D
J
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I 11 A Peak)
Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 W)
V
−
1.2
1.6
V
TM
=
TM
I
mA
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
10
10
10
16
18
22
50
50
50
Holding Current
(V = 12 V, Gate Open, Initiating Current = 150 mA)
D
I
−
30
50
mA
mA
H
Latching Current (V = 24 V, I = 50 mA)
I
D
G
L
MT2(+), G(+); MT2(−), G(−)
MT2(+), G(−)
−
−
20
30
50
80
Gate Trigger Voltage (V = 12 V, R = 100 W)
V
V
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
Gate Non−Trigger Voltage (V = 12 V, R = 100 W, T = 125°C)
V
V
D
L
J
GD
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
0.2
6.5
−
−
−
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10.
(V = 400 V, I = 4.4 A, Commutating dv/dt = 18 V/ms,
(di/dt)
dv/dt
A/ms
c
D
TM
Gate Open, T = 125°C, f = 250 Hz, No Snubber)
J
C = 10 mF
L = 40 mH
L
L
Critical Rate of Rise of Off-State Voltage
500
−
−
V/ms
(V = Rated V
, Exponential Waveform,
DRM
D
Gate Open, T = 125°C)
J
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MAC9D, MAC9M, MAC9N
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
I
RRM
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
I
at V
H
DRM
DRM
I
H
Quadrant 3
MainTerminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC9D, MAC9M, MAC9N
125
120
115
12
10
DC
180°
α = 120, 90, 60, 30°
8
6
4
2
0
120°
α = 180°
110
105
100
60°
DC
90°
α = 30°
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I
, RMS ON-STATE CURRENT (AMP)
I
, ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
100
1
TYPICAL AT
T = 25°C
J
0.1
MAXIMUM @ T = 125°C
J
10
0.01
4
0.1
1
10
100
t, TIME (ms)
1000
1ꢀ·ꢀ10
Figure 4. Thermal Response
MAXIMUM @ T = 25°C
J
40
35
30
25
20
15
10
5
1
MT2 POSITIVE
MT2 NEGATIVE
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
−ꢀ50
−ꢀ30
−ꢀ10
10
30
50
70
90
110
130
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-State Characteristics
Figure 5. Holding Current Variation
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4
Q3
Q1
Q2
−
−
−
50
30
1
0
10
30
50
70
90
110
130
MAC9D, MAC9M, MAC9N
1
0.95
0.9
100
10
1
Q2
0.85
0.8
Q3
0.75
0.7
Q1
0.65
0.6
0.55
0.5
0.45
0.4
−ꢀ50
−ꢀ30 −ꢁ10
10
30
50
70
90
110
130
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
5000
4.5K
4K
100
3.5K
3K
MT2 NEGATIVE
T = 125°C
J
100°C
75°C
10
2.5K
2K
1.5K
1K
1
f =
t
2 t
w
w
6f I
TM
(di/dt)
=
MT2 POSITIVE
c
500
0
1000
V
DRM
1
1
10
100
1000
10
15
20
25
30
35
40
45
50
55
60
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
1N4007
L
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
−
+
TRIGGER
200 V
CHARGE
MT2
51 W
G
1N914
MT1
NON-POLAR
C
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
MAC9D, MAC9M, MAC9N
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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MAC9/D
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