MAC9N [ONSEMI]
Triacs (Silicon Bidirectional Thyristors); 三端双向可控硅（硅双向晶闸管）
| 型号： | MAC9N |
| 厂家： | 
ONSEMI |
| 描述： | Triacs (Silicon Bidirectional Thyristors) |
| 文件： | 总8页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preferred Device
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts
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• On-State Current Rating of 8.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dv/dt — 500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
TRIACS
8 AMPERES RMS
400 thru 800 VOLTS
• Industry Standard TO-220AB Package
• High Commutating di/dt — 6.5 A/ms minimum at 125°C
• Device Marking: Logo, Device Type, e.g., MAC9D, Date Code
MT2
MT1
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off–State Voltage
V
Volts
DRM,
(T = –40 to 125°C, Sine Wave,
V
RRM
J
50 to 60 Hz, Gate Open)
4
MAC9D
MAC9M
MAC9N
400
600
800
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
= 100°C)
I
8.0
Amps
Amps
T(RMS)
T
C
1
2
3
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
TSM
80
TO–220AB
CASE 221A
STYLE 4
T = 125°C)
J
2
2
Circuit Fusing Consideration
(t = 8.3 ms)
I t
26
16
A sec
Peak Gate Power
(Pulse Width ≤ 1.0 µs, T = 80°C)
P
Watts
Watt
°C
PIN ASSIGNMENT
GM
C
1
2
3
4
Main Terminal 1
Average Gate Power
(t = 8.3 ms, T = 80°C)
P
0.35
G(AV)
Main Terminal 2
Gate
C
Operating Junction Temperature Range
T
J
–40 to
+125
Main Terminal 2
Storage Temperature Range
T
stg
–40 to
+150
°C
ORDERING INFORMATION
(1) V
DRM
and V for all types can be applied on a continuous basis. Blocking
RRM
Device
MAC9D
Package
Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TO220AB
TO220AB
TO220AB
50 Units/Rail
50 Units/Rail
50 Units/Rail
MAC9M
MAC9N
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 2
MAC9/D
MAC9D, MAC9M, MAC9N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
2.2
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V = Rated V , V ; Gate Open)
I
,
mA
DRM
T = 25°C
T = 125°C
J
I
RRM
—
—
—
—
0.01
2.0
D
DRM RRM
J
ON CHARACTERISTICS
Peak On-State Voltage*
V
—
1.2
1.6
Volts
mA
TM
(I
TM
= ±11 A Peak)
Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 Ω)
I
D
L
GT
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
10
10
10
16
18
22
50
50
50
Holding Current
(V = 12 V, Gate Open, Initiating Current = ±150 mA)
D
I
—
30
50
mA
mA
H
Latching Current (V = 24 V, I = 50 mA)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–)
I
D
G
L
—
—
20
30
50
80
Gate Trigger Voltage (V = 12 V, R = 100 Ω)
V
GT
Volts
D
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
Gate Non–Trigger Voltage (V = 12 V, R = 100 Ω, T = 125°C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
V
Volts
A/ms
D
L
J
GD
0.2
6.5
—
—
—
—
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10.
(V = 400 V, I = 4.4 A, Commutating dv/dt = 18 V/µs,
(di/dt)
c
D
TM
Gate Open, T = 125°C, f = 250 Hz, No Snubber)
J
C
= 10 µF
= 40 mH
L
L
L
Critical Rate of Rise of Off-State Voltage
dv/dt
500
—
—
V/µs
(V = Rated V
, Exponential Waveform,
Gate Open, T = 125°C)
D
DRM
J
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MAC9D, MAC9M, MAC9N
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
I
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
on state
I
H
DRM
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
at V
DRM
off state
TM
I
H
I
DRM
I
H
Quadrant 3
MainTerminal 2 –
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(–) I
GT
GATE
(+) I
GT
GATE
MT1
MT1
REF
REF
I
–
+ I
GT
GT
(–) MT2
(–) MT2
Quadrant III
Quadrant IV
(+) I
GATE
(–) I
GATE
GT
GT
MT1
REF
MT1
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC9D, MAC9M, MAC9N
125
120
115
12
10
DC
180°
α = 120, 90, 60, 30°
8
6
4
2
0
120°
α = 180°
110
105
100
60°
DC
5
90°
α = 30°
0
1
2
3
4
6
7
8
0
1
2
3
4
5
6
7
8
I
, RMS ON-STATE CURRENT (AMP)
I
, ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
100
1
TYPICAL AT
T = 25°C
J
0.1
MAXIMUM @ T = 125°C
J
10
0.01
4
1·10
0.1
1
10
100
t, TIME (ms)
1000
Figure 4. Thermal Response
MAXIMUM @ T = 25°C
40
35
30
25
20
15
10
5
J
1
MT2 POSITIVE
MT2 NEGATIVE
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
–50 –30 –10
10
30
50
70
90
110
130
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-State Characteristics
Figure 5. Holding Current Variation
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4
MAC9D, MAC9M, MAC9N
1
0.95
0.9
100
10
1
Q2
Q3
0.85
0.8
Q3
Q1
0.75
0.7
Q1
Q2
0.65
0.6
0.55
0.5
0.45
0.4
–50 –30 – 10
10
30
50
70
90
110
130
–50 –30 –10
10
30
50
70
90
110
130
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
5000
4.5K
4K
100
3.5K
3K
MT2 NEGATIVE
T = 125°C
J
100°C
75°C
10
2.5K
2K
1.5K
1K
1
f =
t
2 t
w
w
6f I
TM
=
(di/dt)
MT2 POSITIVE
c
500
0
1000
V
DRM
1
1
10
100
1000
10
15
20
25
30
35
40
45
50
55
60
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
–
TRIGGER
200 V
CHARGE
+
MT2
1N914
51
MT1
NON-POLAR
G
C
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
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5
MAC9D, MAC9M, MAC9N
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE Z
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
T
S
4
1
INCHES
DIM MIN MAX
0.620 14.48
MILLIMETERS
MIN
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
0.405
0.190
0.035
0.147
0.105
0.155
0.025
9.66
4.07
0.64
3.61
2.42
2.80
0.46
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
U
V
Z
0.562 12.70
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
L
R
V
J
G
D
N
0.080
2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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6
MAC9D, MAC9M, MAC9N
Notes
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7
MAC9D, MAC9M, MAC9N
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MAC9/D
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