ISL9V5045S3ST-F085 [ONSEMI]
IGBT，450V，43A，1.25V，500mJ，D2PAKEcoSPARK® I，N 沟道点火;
| 型号： | ISL9V5045S3ST-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，450V，43A，1.25V，500mJ，D2PAKEcoSPARK® I，N 沟道点火 汽车点火 栅 双极性晶体管 |
| 文件： | 总9页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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February 2012
ISL9V5045S3ST_F085
EcoSPARK® N-Channel Ignition IGBT
500mJ, 450V
Features
General Description
SCIS Energy = 500mJ at TJ = 25oC
The ISL9V5045S3ST_F085 is next generation ignition IGBT
that offer outstanding SCIS capability in the industry
standard D2-Pak (TO-263) plastic package. This device
is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Applications
Automotive Ignition Coil Driver Circuits
Coil - On Plug Applications
Package
Symbol
COLLECTOR
R1
GATE
GATE
EMITTER
R2
COLLECTOR
(FLANGE)
EMITTER
JEDEC TO-263AB
D2-Pak
ISL9V5045S3ST_F085 Rev. A1
1
www.fairchildsemi.com
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy
At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Ratings
Units
V
480
24
V
500
mJ
mJ
A
315
51
IC110
43
A
VGEM
±10
V
PD
Power Dissipation Total TC = 25°C
300
W
Power Dissipation Derating TC > 25°C
2
W/°C
°C
°C
°C
°C
kV
TJ
TSTG
TL
Operating Junction Temperature Range
-40 to 175
-40 to 175
300
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
Tpkg
ESD
260
4
Package Marking and Ordering Information
Device Marking
V5045S
Device
Package
TO-263AB
Reel Size
330mm
Tape Width
Quantity
800
ISL9V5045S3ST_F085
24mm
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
BVCES
BVECS
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
420
445
30
450
475
-
480
505
-
V
V
V
TJ = -40 to 150°C
Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
TC = 25°C
BVGES
ICER
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
IGES = ± 2mA
±12
±14
-
V
VCER = 320V, TC = 25°C
-
-
-
-
25
1
µA
mA
RG = 1KΩ, See
TC = 150°C
Fig. 11
IECS
Emitter to Collector Leakage Current
VEC = 24V, See TC = 25°C
-
-
1
40
-
mA
mA
Ω
Fig. 11
TC = 150°C
-
-
-
100
-
R1
R2
Series Gate Resistance
Gate to Emitter Resistance
10K
30K
Ω
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A,
VGE = 4.0V
TC = 25°C,
See Fig. 4
-
-
1.25
1.47
1.60
1.80
V
V
VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A,
VGE = 4.5V
TC = 150°C
ISL9V5045S3ST_F085 Rev. A1
2
www.fairchildsemi.com
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
-
32
-
nC
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
T
C = 25°C
1.3
-
-
2.2
1.8
V
V
TC = 150°C
0.75
VGEP
Gate to Emitter Plateau Voltage
IC = 10A,
VCE = 12V
-
3.0
-
V
Switching Characteristics
td(ON)R
trR
Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω,
-
-
0.7
2.1
4
7
µs
µs
VGE = 5V, RG = 1KΩ
Current Rise Time-Resistive
TJ = 25°C, See Fig. 12
td(OFF)L
tfL
Current Turn-Off Delay Time-Inductive VCE = 300V, L = 2mH,
-
-
10.8
2.8
15
15
µs
µs
VGE = 5V, RG = 1KΩ
Current Fall Time-Inductive
TJ = 25°C, See Fig. 12
SCIS
Self Clamped Inductive Switching
TJ = 25°C, L = 650 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
-
-
500
0.5
mJ
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
TO-263
°C/W
Typical Characteristics
40
40
35
30
25
20
15
10
5
R
= 1KΩ, V = 5V,V = 14V
GE dd
G
R
= 1KΩ, V = 5V,V = 14V
GE dd
G
35
30
25
20
15
10
5
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
SCIS Curves valid for V
Voltages of <480V
clamp
SCIS Curves valid for V
Voltages of <480V
clamp
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
10
t
, TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
CLP
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
ISL9V5045S3ST_F085 Rev. A1
3
www.fairchildsemi.com
Typical Characteristics (Continued)
1.10
1.25
1.20
1.15
1.10
1.05
1.00
I
= 10A
CE
I
= 6A
CE
1.05
1.00
0.95
0.90
0.85
V
= 3.7V
GE
V
= 4.0V
GE
V
= 3.7V
GE
V
= 4.0V
GE
V
= 4.5V
GE
V
= 4.5V
GE
V
= 5.0V
GE
V
= 5.0V
GE
V
= 8.0V
GE
V
= 8.0V
GE
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
50
50
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
GE
V
V
GE
GE
40
30
20
10
0
40
30
20
10
0
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
T
= - 40°C
T
= 25°C
J
J
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
50
50
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
DUTY CYCLE < 0.5%, V = 5V
CE
PULSE DURATION = 250µs
V
GE
40
30
20
10
0
V
40
30
20
GE
V
GE
V
GE
T
= 175°C
J
T
= 25°C
J
10
0
T
= 175°C
T
= -40°C
3.5
J
J
0
1.0
2.0
3.0
4.0
1.0
1.5
2.0
2.5
3.0
4.0
4.5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
ISL9V5045S3ST_F085 Rev. A1
4
www.fairchildsemi.com
Typical Characteristics (Continued)
55
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 4.0V
GE
V
= V
GE
CE
50
45
40
35
30
25
20
15
10
5
I
= 1mA
CE
0
25
-50
-25
0
25
50
75
100
125
150
175
50
75
100
125
150
175
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
10000
1000
100
10
20
I
= 6.5A, V = 5V, R = 1KΩ
GE G
Resistive t
CE
OFF
V
= 24V
ECS
18
16
14
12
10
8
Inductive t
OFF
V
= 300V
CES
V
= 250V
CES
6
1
Resistive t
150
ON
4
0.1
-50
2
-25
0
25
50
75
100
125
150
175
25
50
75
100
125
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
3000
8
7
6
5
4
3
2
1
0
I
= 1mA, R = 0.6Ω, T = 25°C
G(REF)
L
J
FREQUENCY = 1 MHz
2500
C
2000
1500
1000
500
0
IES
V
= 12V
CE
C
RES
C
OES
V
= 6V
CE
0
5
10
15
20
25
0
10
20
Q , GATE CHARGE (nC)
G
30
40
50
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
ISL9V5045S3ST_F085 Rev. A1
5
www.fairchildsemi.com
Typical Characteristics (Continued)
475
I
= 10mA
CER
T
= - 40°C
J
470
465
460
455
450
445
440
435
430
T
= 175°C
J
T
= 25°C
J
10
100
1000
5000
R
, SERIES GATE RESISTANCE (Ω)
G
Figure 15. Breakdown Voltage vs Series Gate Resistance
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
t
1
-2
-3
P
D
10
10
0.01
SINGLE PULSE
t
2
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R ) + T
θJC C
J
D
θJC
-6
-5
-4
-3
-2
10
10
10
T , RECTANGULAR PULSE DURATION (s)
10
10
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuits and Waveforms
L
V
R
or
L
CE
LOAD
C
C
R
G
R
= 1KΩ
PULSE
GEN
G
+
G
DUT
V
DUT
CE
G
-
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
ISL9V5045S3ST_F085 Rev. A1
6
www.fairchildsemi.com
Test Circuits and Waveforms (Continued)
V
BV
CES
CE
t
P
V
CE
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
ISL9V5045S3ST_F085 Rev. A1
7
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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