ISL9V5045S3ST-F085C [ONSEMI]
IGBT, 450V, 43A, 1.25V, 500mJ, D2PAKEcoSPARK® I, N-Channel Ignition;
| 型号： | ISL9V5045S3ST-F085C |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 450V, 43A, 1.25V, 500mJ, D2PAKEcoSPARK® I, N-Channel Ignition 双极性晶体管 |
| 文件： | 总8页 (文件大小：1226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
ECOSPARK) Ignition IGBT
500 mJ, 450 V, N-Channel Ignition IGBT
ISL9V5045S3ST-F085C
2
D PAK−3
Features
CASE 418AJ
• SCIS Energy = 500 mJ at T = 25°C
J
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
1
Gate
Applications
2
$Y&Z&3&K
V5045SC
4
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Applications
Collector
Collector
3
Emitter
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Week & Year)
= Lot Code
Parameter
Symbol
Value
Unit
Collector to Emitter Breakdown Voltage
C
BV
480
V
CER
(I = 1 mA)
V5045SC
= Specific Device Code
Emitter to Collector Voltage − Reverse
BV
24
V
ECS
Battery Condition (I = 10 mA)
C
I
= 39.2 A, L = 650 mHy,
E
500
315
mJ
mJ
SCIS
GE
SCIS25
Collector
R
= 1 kW, T = 25°C (Note 1)
C
I
= 31.1 A, L = 650 mHy,
E
SCIS
SCIS150
IC25
R
= 1 kW, T = 150°C (Note 2)
GE
C
R
1
Collector Current Continuous,
at V = 4.0 V, T = 25°C
51
43
A
A
Gate
GE
C
Collector Current Continuous,
at V = 4.0 V, T = 110°C
IC110
R
2
GE
C
Gate to Emitter Voltage Continuous
V
10
300
2
V
W
GEM
Power Dissipation Total, T = 25°C
PD
PD
Emitter
C
Power Dissipation Derating, T > 25°C
W/°C
°C
C
ORDERING INFORMATION
Operating Junction and Storage
Temperature
T , T
J
−40 to
175
STG
See detailed ordering and shipping information on page 2 of
this data sheet.
Lead Temperature for Soldering
T
300
260
4
°C
°C
kV
kV
L
Purposes (1/8″ from case for 10 s)
Reflow soldering according to
JESD020C
T
PKG
HBM−Electrostatic Discharge Voltage at
100 pF, 1500 W
ESD
ESD
CDM−Electrostatic Discharge Voltage
at 1 W
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self Clamped inductive Switching Energy (ESCIS25) of 500 mJ is based on
the test conditions that is starting T = 25°C, L = 650 mHy, I
= 39.2 A,
J
SCIS
V
= 100 V during inductor charging and V = 0 V during time in clamp.
CC
CC
2. Self Clamped inductive Switching Energy (ESCIS150) of 315 mJ is based on
the test conditions that is starting T = 150°C, L = 650 mHy, I = 31.1 A,
J
SCIS
V
CC
= 100 V during inductor charging and V =0 V during time in clamp.
CC
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
ISL9V5045S3ST−F085C/D
May, 2022 − Rev. 1
ISL9V5045S3ST−F085C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Case – Steady State (Drain)
R
0.9
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter
Breakdown Voltage
BV
BV
BV
BV
I
I
= 2 mA, V = 0 V, R = 1 kW,
420
445
30
450
475
−
480
505
−
V
V
V
V
CER
CES
ECS
GES
CE
J
GE
GE
T = −40 to 150°C
Collector to Emitter
Breakdown Voltage
I
= 10 mA, V = 0 V, R = 0 W,
CE GE GE
T = −40 to 150°C
J
Emitter to Collector
Breakdown Voltage
I = −75 mA, V = 0 V, T = 25°C
CE GE J
Gate to Emitter Breakdown
Voltage
I
=
2 mA
12
14
−
GES
Collector to Emitter Leakage
Current
V
= 175 V, R = 1 kW
T = 25°C
−
−
−
−
25
1
mA
mA
mA
CER
CE
EC
GE
J
T = 150°C
J
Emitter to Collector Leakage
Current
I
V
= 24 V
T = 25°C
J
−
−
1
ECS
T = 150°C
J
−
−
40
−
Series Gate Resistance
Gate to Emitter Resistance
ON CHARACTERISTICS
R
R
−
100
−
W
1
2
10
30
kW
Collector to Emitter Saturation
Voltage
V
V
I
I
= 10 A, V = 4.0 V, T = 25°C
−
−
1.25
1.47
1.6
1.8
V
V
CE(SAT)
CE
GE
J
Collector to Emitter Saturation
Voltage
= 15 A, V = 4.5 V, T = 150°C
GE J
CE(SAT)
CE
DYNAMIC CHARACTERISTICS
Gate Charge
Q
I
I
= 10 A, V = 12 V, V = 5 V
−
1.3
0.75
−
32
−
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
GE
Gate to Emitter Threshold
Voltage
V
= 1 mA, V = V
T = 25°C
J
GE(TH)
CE
CE
GE
T = 150°C
−
J
Gate to Emitter Plateau
Voltage
V
V
= 12 V, I = 12 A
3.1
V
GEP
CE
CE
SWITCHING CHARACTERISTICS
Current Turn−On Delay
Time−Resistive
td
(ON)R
V
J
= 14 V, R = 1 W, V = 5 V, R = 1 kW,
−
0.7
4
ms
CE
L
GE
G
T = 25°C
Current Rise Time−Resistive
t
−
−
2.1
7
rR
Current Turn−Off Delay
Time−Inductive
td
V
J
= 300 V, L = 650 mH, V = 5 V, R = 1 kW,
10.8
15
(OFF)L
CE
GE
G
T = 25°C
Current Fall Time−Inductive
t
fL
−
2.8
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
Package
Shipping
2
ISL9V5045S3ST−F085C
D PAK−3
800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
ISL9V5045S3ST−F085C
TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
Current vs. Time in Clamp
Figure 3. Collector to Emitter On−State Voltage
Figure 4. Collector to Emitter On−State
vs. Junction Temperature
Voltage vs. Junction Temperature
Figure 5. Collector to Emitter On−State
Figure 6. Collector to Emitter On− State
Voltage vs. Collector Current
Voltage vs. Collector Current
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3
ISL9V5045S3ST−F085C
TYPICAL CHARACTERISTICS (Continued)
Figure 7. Collector to Emitter On−State
Figure 8. Transfer Characteristics
Voltage vs. Collector Current
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
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4
ISL9V5045S3ST−F085C
TYPICAL CHARACTERISTICS (Continued)
Figure 13. Switching Time vs. Junction
Temperature
Figure 14. Capacitance vs. Collector to Emitter
Voltage
Figure 15. Break down Voltage vs. Series Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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5
ISL9V5045S3ST−F085C
TEST CIRCUIT AND WAVEFORMS
L
R
or
L
V
CC
LOAD
C
C
R
G
G
R
= 1 kW
G
PULSE
GEN
+
G
DUT
E
DUT
V
CC
−
5 V
E
Figure 18. tON and tOFF Switching Test Circuit
Figure 17. Inductive Switching Test Circuit
V
CE
BV
CES
t
p
L
V
CE
I
SCIS
C
Vary t to obtain
+
V
CC
p
required peak I
R
SCIS
G
G
V
CC
DUT
−
V
GE
E
t
p
I
0 V
SCIS
0
0.01 W
t
AV
Figure 20. Energy Waveforms
Figure 19. Energy Test Circuit
ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
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