ISL9R1560G2-F085 [ONSEMI]
600V，15A，1.8V，TO-247（2 引线）Stealth™ 整流器;
| 型号： | ISL9R1560G2-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600V，15A，1.8V，TO-247（2 引线）Stealth™ 整流器 软恢复二极管 局域网 软恢复能力电源 |
| 文件： | 总7页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STEALTHt Rectifier
15 A, 600 V
ISL9R1560G2-F085
Description
The ISL9R1560G2−F085 is Stealth diode optimized for low loss
performance in high frequency hard switched applications.
The Stealth family exhibits low reverse recovery current (I
and exceptionally soft recovery under typical operating conditions.
)
RM(REC)
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This device is intended for use as a free wheeling or boost diode
in power supplies and other power switching applications. The low
2. ANODE
1. CATHODE
I
and short ta phase reduce loss in switching transistors. The soft
RRM
recovery minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional snubber
circuitry. Consider using the Stealth] diode with an SMPS IGBT
to provide the most efficient and highest power density design at lower
cost.
TO−247−2LD
CASE 340CL
Features
• High Speed Switching (t = 26 ns(Typ.) @ I = 15 A)
rr
F
• Low Forward Voltage (V = 2.2 V(Max) @ I = 15 A)
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free
1
2
2. Anode
1. Cathode
Applications
• Automotive DC/DC Converter
• Automotive On Board Charger
• Switching Power Supply
• Power Switching Circuits
MARKING DIAGRAM
$Y&Z&3&K
R1560G2
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
R1560G2
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2020 − Rev. 4
ISL9R1560G2−F085/D
ISL9R1560G2−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Value
600
600
600
15
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
Average Rectified Forward Current (T = 25°C)
I
A
C
F(AV)
Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz)
Avalanche Energy (1 A, 40 mH)
I
45
A
FSM
E
20
mJ
°C
AVL
Operating Junction and Storage Temperature
T
T
−55 to
+175
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Tube
Quantity
ISL9R1560G2−F085
R1560G2
TO−247−2LD
−
30
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Symbol
Value
Unit
°C/W
°C/W
R
R
0.93
45
q
JC
JA
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
−
Typ
Max
Unit
mA
mA
V
Instantaneous Reverse Current
I
R
V
= 600 V
T
C
T
C
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
= 175°C
= 25°C
−
−
100
2
R
−
Instantaneous Forward Voltage
(Note 1)
V
FM
I = 15 A
F
−
1.8
1.35
20
2.2
2
−
V
Reverse Recovery Time
(Note 2)
t
rr
−
30
ns
I = 1 A, di/dt = 200 A/ms,
F
V
CC
= 390 V
I = 15 A, di/dt = 200 A/ms,
CC
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
−
−
26
114
15
11
40
−
40
−
ns
ns
F
V
= 390 V
Reverse Recovery Time
t
a
I = 15 A, di/dt = 200 A/ms,
−
−
ns
F
CC
V
= 390 V
t
b
−
−
ns
Q
−
−
nC
mJ
Reverse Recovery Charge
Avalanche Energy
rr
E
AVL
I
AV
= 1 A, L = 40 mH
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design.
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2
ISL9R1560G2−F085
TYPICAL PERFORMANCE CHARACTERISTICS
100
10
1
1000
100
10
T
= 175°C
C
T
C
= 175°C
T
= 125°C
C
1
0.1
0.01
T
C
= 125°C
T
C
= 25°C
T
C
= 25°C
1E−3
1E−4
0.1
500 600
0.1
0.5
1.0
1.5
2.0
2.5
100
200
300
400
0
V , Reverse Voltage (V)
R
V , Forward Voltage (V)
F
Figure 1. Typical Forward Voltage Drop vs.
Forward Current
Figure 2. Typical Reverse Current vs. Reverse
Voltage
200
400
I = 15 A
F
Typical Capacitance
at 10 V = 58 pF
150
100
50
0
300
200
100
0
T
= 175°C
C
T
= 125°C
= 25°C
C
T
C
100
200
300
400
500
0.1
1
10
100
di/dt (A/ms)
V , Reverse Voltage (V)
R
Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 3. Typical Junction Capacitance
15
10
5
50
40
30
20
10
0
T
= 175°C
C
T
C
= 125°C
T
= 25°C
C
I = 15 A
F
0
500
175
100
200
300
400
25
50
75
100
125
150
di/dt (A/ms)
Case Temperature, T (°C)
C
Figure 5. Typical Reverse recovery Current
vs. di/dt
Figure 6. Maximum Reverse Recovery Current
vs. dIF/dt
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3
ISL9R1560G2−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
800
I = 15 A
F
600
400
200
0
T
= 175°C
C
T
C
= 125°C
T
C
= 25°C
100
200
300
400
500
di/dt (A/ms)
Figure 7. Reverse Recovery Charge
1
0.1
P
DM
t
1
t
2
*Notes:
1. Z (t) = 0.93°C/W Typ.
q
JC
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
q
JM
C
DM
JC
0.01
1
2
0
−2
−1
−5
−4
−3
10
10
10
10
10
10
10
10
t , Square Wave Pulse Duration (sec)
1
Figure 8. Transient Thermal Response Curve
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4
ISL9R1560G2−F085
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
dI
dt
2
F
t
rr
F
I
F
t
a
t
b
DUT CURRENT
SENSE
0
R
G
+
0.25 I
V
DD
RM
V
GE
−
MOSFET
t
I
1
RM
t
2
Figure 10. trr Waveforms and Definitions
Figure 9. trr Test Circuit
I = 1 A
L = 40 mH
R < 0.1 W
V
E
= 50 V
AVL
Q = IGBT (BV
DD
2
= 1/2LI [V
/(V
− V )]
R(AVL
V
AVL
R(AVL)
R(AVL) DD
> DUT V
)
1
CES
R
L
+
V
I
L
CURRENT
SENSE
I
L
DD
I V
Q
1
V
DD
DUT
−
0.1
t
t
1
t
2
t
0
Figure 12. Avalanche Current and Voltage
Waveforms
Figure 11. Avalanche Energy Test Circuit
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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相关型号：
ISL9R1560S3ST_NL
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB,
FAIRCHILD
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