ISL9R1560P2-F085 [ONSEMI]
600V，15A，1.65V，TO-220（2 引线）Stealth™ 整流器;
| 型号： | ISL9R1560P2-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600V，15A，1.65V，TO-220（2 引线）Stealth™ 整流器 软恢复二极管 局域网 |
| 文件： | 总8页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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December 2014
ISL9R1560P2_F085
15A, 600V Stealth Rectifier
Features
Max Ratings (600V, 15A)
•
•
•
•
High Speed Switching ( trr=30ns(Typ.) @ IF=15A )
Low Forward Voltage( VF=2.2V(Max.) @ IF=15A )
Avalanche Energy Rated
The ISL9R1560P2_F085 is a Stealth™ diode with soft
recovery characteristics (trr < 30ns). It has a low forward-
voltage drop and is of silicon nitride passivated, ion-
implanted, epitaxial construction.
This device is intended for use as a freewheel/clamping
diode in various automotive switching power supplies
and other power switching applications.
Its low stored charge as well as Stealth™ and soft recov-
ery characteristics minimize ringing and electrical noise
while reduce the overall power loss.
AEC-Q101 Qualified
Applications
•
•
•
•
Automotive DCDC Converter
Automotive On Board Charger
Switching Power Supply
Power Switching Circuits
Pin Assignments
1
2
1. Cathode
2. Anode
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
600
V
V
Working Peak Reverse Voltage
DC Blocking Voltage
600
600
V
IF(AV)
IFSM
EAVL
Average Rectified Forward Current
@ TC = 25°C
15
A
Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz)
Avalanche Energy (1A, 40mH)
45
20
A
mJ
°C
T
J, TSTG
Operating Junction and Storage Temperature
- 55 to +175
Thermal Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Max
0.93
62
Units
°C/W
°C/W
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Tube
Quantity
ISL9R1560P2
ISL9R1560P2_F085
TO-220AC
-
50
©2014 Fairchild Semiconductor Corporation
ISL9R1560P2_F085 Rev. C1
1
www.fairchildsemi.com
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
IR
Instantaneous Reverse Current VR = 600V
TC = 25 °C
TC = 175 °C
TC = 25 °C
-
-
-
-
100
uA
uA
1000
1
VFM
Instantaneous Forward Voltage IF = 15A
-
-
1.65
1.24
2.2
1.7
V
V
T
C = 175 °C
2
trr
Reverse Recovery Time
IF =1A, di/dt = 200A/μs,
R = 390V
TC = 25 °C
-
22
30
ns
V
IF =15A, di/dt = 200A/μs,
VR= 390V
-
-
30
127
-
-
ns
ns
TC = 25 °C
T
C = 175 °C
ta
tb
Qrr
Reverse Recovery Time
IF =15A, di/dt = 200A/μs,
VR= 390V
TC = 25 °C
-
-
-
17
13
48
-
-
-
ns
ns
nC
Reverse Recovery Charge
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
2. Guaranteed by design
Test Circuit and Waveforms
t Test Circuit
t Waveforms and Definitions
rr
rr
V
R
AMPLITUDE AND
GE
G
CONTROL dI /dt
F
L
t
t
CONTROL I
F
1 AND
2
dI
dt
F
t
rr
I
F
DUT
CURRENT
SENSE
t
t
b
a
R
G
0
+
V
V
DD
GE
-
IGBT
0.25 I
RM
t
1
I
RM
t
2
Avalanche Energy Test Circuit
Avalanche Current and Voltage Waveforms
I = 1A
L = 40mH
R < 0.1Ω
V
AVL
2
E
= 1/2LI [V
/(V
- V )]
DD
AVL
R(AVL) R(AVL)
Q
= IGBT (BV
CES
> DUT V )
R(AVL)
1
L
R
I
I
L
L
+
V
CURRENT
SENSE
I
V
DD
Q
1
V
DD
t
t
t
2
t
0
1
DUT
-
2
www.fairchildsemi.com
ISL9R1560P2_F085 Rev. C1
Typical Performance Characteristics
Figure 2. Typical Reverse Current vs.
Figure 1. Typical Forward Voltage Drop
Reverse Voltage
vs. Forward Current
1000
100
100
TC = 175oC
TC = 175oC
10
TC = 125oC
10
1
0.1
TC = 125oC
1
0.01
TC = 25oC
TC = 25oC
1E-3
1E-4
0.1
0.1
100
200
300
400
500
600
0.5
1.0
1.5
2.0
2.5
Reverse Voltage, VR [V]
Forward Voltage, VF [V]
Figure 3.Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
500
200
IF = 15A
Typical Capacitance
at 10V = 61pF
400
300
200
100
0
150
TC = 175oC
100
TC = 125oC
50
TC = 25oC
0
100
0.1
1
10
100
200
300
400
500
Reverse Voltage, VR[V]
di/dt [A/μs]
Figure 6. Forward Current Derating Curve
Figure 5. Typical Reverse Recovery
Current vs. di/dt
20
90
IF = 15A
TC = 175oC
15
60
30
0
TC = 125oC
10
5
0
TC = 25oC
100
200
300
di/dt [A/μs]
400
500
25
50
75
100
125
150
175
Case temperature, TC [oC]
3
www.fairchildsemi.com
ISL9R1560P2_F085 Rev. C1
Typical Performance Characteristics (Continued)
Figure 7. Reverse Recovery Charge
800
600
400
200
0
o
T
= 175 C
I
= 15A
C
F
o
T
= 125 C
C
o
T
= 25 C
C
100
200
300
di/dt [A/μs]
400
500
Figure 8. Transient Thermal Response Curve
2
1
D=0.5
0.2
PDM
t1
t2
0. 1
0.05
0. 02
0.1
* Notes :
o
1. Z
(t) = 0.93 C/W Typ.
thJC
0. 01
2. Duty Factor, D=t /t
1 2
single pulse
10-4
3. T
JM
- T = P
C
* Z
(t)
DM thJC
101
0.01
10-5
10-3
10-2
10-1
100
102
t , SquareWave Pulse Duration [sec]
1
4
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ISL9R1560P2_F085 Rev. C1
Mechanical Dimensions
TO-220-2L
4.09
3.50
M
M
B A
0.36
4.83
3.56
10.67
9.65
B
A
8.89
6.86
3.43
2.54
1.40
0.51
6.86
5.84
7°
3°
13.40
12.19
16.51
14.22
16.15
15.75
9.40
8.38
5°
3°
5°
3°
6.35 MAX
1
2
0.60 MAX
C
14.73
13.60
1.65
1.25
1.91
0.61
0.33
2.54
5.08
2.92
2.03
1.02
0.38
M
0.36
C A
B
5°
3°
5°
3°
4.672
4.472
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DRAWING FILE NAME: TO220A02REV04.
Dimensions in Millimeters
5
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ISL9R1560P2_F085 Rev. C1
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Saving our world, 1mW/W/kW at a time™
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相关型号：
ISL9R1560S3ST_NL
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB,
FAIRCHILD
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