HCPL2611W [ONSEMI]
Logic IC Output Optocoupler;
| 型号： | HCPL2611W |
| 厂家： | 
ONSEMI |
| 描述： | Logic IC Output Optocoupler 输出元件 光电 |
| 文件： | 总15页 (文件大小：1286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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January 2011
Single-Channel: 6N137, HCPL2601, HCPL2611
Dual-Channel: HCPL2630, HCPL2631
High Speed 10MBit/s Logic Gate Optocouplers
Features
Description
■ Very high speed – 10 MBit/s
■ Superior CMR – 10 kV/µs
■ Double working voltage-480V
■ Fan-out of 8 over -40°C to +85°C
■ Logic gate output
■ Strobable output
■ Wired OR-open collector
■ U.L. recognized (File # E90700)
The 6N137, HCPL2601, HCPL2611 single-channel and
HCPL2630, HCPL2631 dual-channel optocouplers
consist of a 850 nm AlGaAS LED, optically coupled to a
very high speed integrated photo-detector logic gate with
a strobable output. This output features an open collec-
tor, thereby permitting wired OR outputs. The coupled
parameters are guaranteed over the temperature range
of -40°C to +85°C. A maximum input signal of 5mA will
provide a minimum output sink current of 13mA (fan out
of 8).
Applications
■ Ground loop elimination
An internal noise shield provides superior common
mode rejection of typically 10kV/µs. The HCPL2601 and
HCPL2631 has a minimum CMR of 5kV/µs. The
HCPL2611 has a minimum CMR of 10kV/µs.
■ LSTTL to TTL, LSTTL or 5-volt CMOS
■ Line receiver, data transmission
■ Data multiplexing
■ Switching power supplies
■ Pulse transformer replacement
■ Computer-peripheral interface
Schematics
Package Outlines
8
VCC
N/C
+
1
8
VCC
8
+
1
1
VF1
_
VE
2
3
7
6
5
V01
2
3
7
6
5
VF
_
8
8
_
VO
V02
1
1
VF2
+
GND
N/C
4
GND
Truth Table (Positive Logic)
4
Input
Enable
Output
H
L
H
H
L
H
H
H
L
6N137
HCPL2601
HCPL2611
HCPL2630
HCPL2631
H
L
L
L
(1)
A 0.1µF bypass capacitor must be connected between pins 8 and 5
.
H
L
NC
NC
H
©2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
°C
T
Storage Temperature
Operating Temperature
-55 to +125
-40 to +85
STG
T
°C
OPR
T
Lead Solder Temperature (for wave soldering only)*
260 for 10 sec
°C
SOL
EMITTER
I
DC/Average Forward
Input Current
Single Channel
50
30
mA
V
F
Dual Channel (Each Channel)
V
V
Enable Input Voltage Not to Exceed Single Channel
by more than 500mV
5.5
E
V
CC
Reverse Input Voltage
Power Dissipation
Each Channel
5.0
100
45
V
R
P
Single Channel
mW
I
Dual Channel (Each Channel)
DETECTOR
V
Supply Voltage
Output Current
7.0
V
CC
(1 minute max)
I
Single Channel
50
50
7.0
85
60
mA
O
Dual Channel (Each Channel)
Each Channel
V
Output Voltage
V
O
P
Collector Output
Power Dissipation
Single Channel
mW
O
Dual Channel (Each Channel)
*For peak soldering reflow, please refer to the Reflow Profile on page 11.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Parameter
Min.
0
Max.
250
15
Units
µA
mA
V
I
Input Current, Low Level
FL
I
Input Current, High Level
Supply Voltage, Output
Enable Voltage, Low Level
Enable Voltage, High Level
Low Level Supply Current
Fan Out (TTL load)
*6.3
4.5
0
FH
V
5.5
CC
V
0.8
V
EL
V
2.0
-40
V
V
EH
CC
T
+85
8
°C
A
N
*6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value
is 5.0mA or less.
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
2
Electrical Characteristics (T = 0 to 70°C unless otherwise specified)
A
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min. Typ.* Max. Unit
EMITTER
V
Input Forward Voltage
I = 10mA
1.8
V
V
F
F
T = 25°C
1.4
1.75
A
B
Input Reverse Breakdown
Voltage
I
= 10µA
R
5.0
VR
C
Input Capacitance
V = 0, f = 1MHz
60
pF
IN
F
∆V / ∆T
Input Diode Temperature
Coefficient
I = 10mA
-1.4
mV/°C
F
A
F
DETECTOR
I
High Level Supply Current
Low Level Supply Current
V
= 5.5V, I = 0mA,
Single Channel
Dual Channel
7
10
9
10
15
13
mA
mA
CCH
CC
F
V = 0.5V
E
I
Single Channel
V
= 5.5V,
CC
CCL
I = 10mA
F
Dual Channel
V = 0.5V
14
21
E
I
Low Level Enable Current
High Level Enable Current
High Level Enable Voltage
Low Level Enable Voltage
V
V
V
V
= 5.5V, V = 0.5V
-0.8
-0.6
-1.6
-1.6
mA
mA
V
EL
CC
CC
CC
CC
E
I
= 5.5V, V = 2.0V
E
EH
V
= 5.5V, I = 10mA
2.0
EH
F
(3)
V
= 5.5V, I = 10mA
0.8
V
EL
F
Switching Characteristics (T = -40°C to +85°C, V = 5V, I = 7.5mA unless otherwise specified)
A
CC
F
Symbol
AC Characteristics
Test Conditions
Min.
Typ.* Max. Unit
T
Propagation Delay
Time to Output HIGH
Level
R = 350Ω,
L
T = 25°C
20
45
75
ns
PLH
L
A
(4)
C = 15pF (Fig. 12)
100
(5)
T
Propagation Delay
Time to Output LOW
Level
T = 25°C
25
45
75
ns
PHL
A
R = 350Ω, C = 15pF (Fig. 12)
100
L
L
|T
–T
| Pulse Width Distortion (R = 350Ω, C = 15pF (Fig. 12)
3
35
ns
ns
PHL PLH
L
L
(6)
t
Output Rise Time
(10–90%)
R = 350Ω, C = 15pF (Fig. 12)
50
r
L
L
(7)
t
Output Rise Time
(90–10%)
R = 350Ω, C = 15pF (Fig. 12)
12
20
ns
ns
f
L
L
(8)
(9)
t
Enable Propagation
Delay Time to Output
HIGH Level
I = 7.5mA, V = 3.5V, R = 350Ω, C = 15pF
ELH
F
EH
L
L
(Fig. 13)
t
Enable Propagation
Delay Time to Output
LOW Level
I = 7.5mA, V = 3.5V, R = 350Ω, C = 15pF
20
ns
EHL
F
EH
L
L
(Fig. 13)
|CM |
Common Mode
T = 25°C, |V | = 50V 6N137, HCPL2630
10,000
V/µs
H
A
CM
Transient Immunity
(at Output HIGH Level)
(Peak), I = 0mA,
F
HCPL2601, HCPL2631 5000 10,000
V
(Min.) = 2.0V,
OH
(10)
R = 350Ω
(Fig. 14)
L
|V | = 400V
HCPL2611
10,000 15,000
10,000
V/µs
CM
|CM |
Common Mode
Transient Immunity
R = 350Ω, I = 7.5mA, 6N137, HCPL2630
L
L
F
V
(Max.) = 0.8V,
OL
HCPL2601, HCPL2631 5000 10,000
(11)
(at Output LOW Level) T = 25°C
(Fig. 14)
A
|V | = 400V
HCPL2611
10,000 15,000
CM
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
3
Electrical Characteristics (Continued)
Transfer Characteristics (T = -40 to +85°C unless otherwise specified)
A
Symbol
DC Characteristics
Test Conditions
Min.
Typ.* Max.
Unit
I
HIGH Level Output Current
V
= 5.5V, V = 5.5V,
100
µA
OH
CC
O
(2)
I = 250µA, V = 2.0V
F
E
V
LOW Level Output Current
Input Threshold Current
V
= 5.5V, I = 5mA, V = 2.0V,
= 13mA
.35
3
0.6
5
V
OL
FT
CC
F
E
(2)
I
CL
I
V
= 5.5V, V = 0.6V, V = 2.0V,
mA
CC
O
E
I
= 13mA
OL
Isolation Characteristics (T = -40°C to +85°C unless otherwise specified.)
A
Symbol
Characteristics
Test Conditions
Min.
Typ.*
Max.
Unit
I
Input-Output Insulation
Leakage Current
Relative humidity = 45%,
1.0*
µA
I-O
T = 25°C, t = 5s,
A
(12)
V
= 3000 VDC
I-O
V
Withstand Insulation Test
Voltage
RH < 50%, T = 25°C,
2500
V
RMS
ISO
A
(12)
I
≤ 2µA, t = 1 min.
I-O
(12)
12
R
C
Resistance (Input to Output)
V
= 500V
10
0.6
Ω
I-O
I-O
(12)
Capacitance (Input to Output) f = 1MHz
pF
I-O
*All Typicals at V = 5V, T = 25°C
CC
A
Notes:
1. The V supply to each optoisolator must be bypassed by a 0.1µF capacitor or larger. This can be either a ceramic
CC
or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible
to the package V and GND pins of each device.
CC
2. Each channel.
3. Enable Input – No pull up resistor required as the device has an internal pull up resistor.
4. t
– Propagation delay is measured from the 3.75mA level on the HIGH to LOW transition of the input current
PLH
pulse to the 1.5 V level on the LOW to HIGH transition of the output voltage pulse.
5. t – Propagation delay is measured from the 3.75mA level on the LOW to HIGH transition of the input current
PHL
pulse to the 1.5 V level on the HIGH to LOW transition of the output voltage pulse.
6. t – Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse.
r
7. t – Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse.
f
8. t
– Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input
ELH
voltage pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse.
9. t – Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input
EHL
voltage pulse to the 1.5V level on the HIGH to LOW transition of the output voltage pulse.
10. CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the
H
HIGH state (i.e., V
> 2.0V). Measured in volts per microsecond (V/µs).
OUT
11. CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the
L
LOW output state (i.e., V
< 0.8V). Measured in volts per microsecond (V/µs).
OUT
12. Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted
together.
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
4
Typical Performance Curves
Fig.1 Low Level Output Voltage vs. Ambient Temperature
Fig. 2 Input Diode Forward Voltage
vs. Forward Current
0.8
Conditions:
30
I
V
F = 5 mA
E = 2 V
VCC= 5.5V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
16
10
I
OL = 12.8 mA
1
0.1
IOL = 16mA
IOL = 6.4mA
0.01
0.001
IOL = 9.6mA
-40
-20
0
20
40
60
80
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
T
A
– AMBIENT TEMPERATURE (°C)
V
F
– FORWARD VOLTAGE (V)
Fig. 4 Low Level Output Current
vs. Ambient Temperature
Fig.3 Switching Time vs. Forward Current
120
100
80
60
40
20
0
50
45
40
35
30
25
20
VCC = 5 V
IF = 15mA
IF = 10mA
RL = 4 kΩ (TPLH
)
IF = 5mA
RL = 1 kΩ (TPLH
)
Conditions:
V
V
V
CC= 5V
E = 2V
OL = 0.6V
RL = 1 kΩ
RL = 4 kΩ
(TPHL
L = 350 kΩ
)
RL = 350 Ω (TPLH
)
R
5
7
9
11
13
15
-40
-20
0
20
T – AMBIENT TEMPERATURE (°C)
A
40
60
80
I
– FORWARD CURRENT (mA)
F
Fig. 6 Output Voltage vs. Input Forward Current
Fig. 5 Input Threshold Current
vs. Ambient Temperature
6
5
4
3
2
1
0
4
Conditions:
VCC= 5.0 V
VO = 0.6 V
RL = 350Ω
3
2
1
RL = 350Ω
RL = 4kΩ
RL = 1kΩ
RL = 1kΩ
RL = 4kΩ
0
1
2
3
4
5
6
-40
-20
0
20
40
60
80
T
– AMBIENT TEMPERATURE (°C)
I - FORWARD CURRENT (mA)
F
A
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
Fig. 7 Pulse Width Distortion vs.Temperature
Fig. 8 Rise and Fall Time vs.Temperature
80
600
500
400
300
200
100
0
RL = 4 kΩ (tr)
RL = 4 kΩ
60
Conditions:
IF = 7.5 mA
VCC = 5 V
Conditions:
IF = 7.5mA
VCC = 5A
40
20
RL = 1 kΩ
RL = 1 kΩ (tr)
RL = 350Ω (tr)
0
RL = 350Ω
RL = 1 kΩ
RL = 4 kΩ
RL = 350Ω
(tf)
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
20
40
60
80
100
T
A
– TEMPERATURE (°C)
T – TEMPERATURE (°C)
A
Fig. 9 Enable Propagation Delay vs.Temperature
Fig. 10 Switching Time vs.Temperature
120
120
100
80
RL = 4 kΩ TPLH
100
80
60
40
20
0
RL = 4 kΩ (TELH)
60
RL = 1 kΩ TPLH
RL = 350Ω TPLH
RL = 1 kΩ
RL = 1 kΩ (TELH)
RL = 350Ω (TELH)
40
RL = 350Ω
RL = 1 kΩ
RL = 4 kΩ
(TEHL)
80
TPHL
RL = 4 kΩ
RL = 350Ω
20
-60
-60
-40
-20
0
20
40
60
100
-40
-20
0
20
40
60
80
100
T
A
– TEMPERATURE (°C)
T
– TEMPERATURE (°C)
A
Fig. 11 High Level Output Current
vs.Temperature
20
15
10
5
Conditions:
VCC = 5.5 V
V
V
O = 5.5 V
E = 2.0 V
IF = 250 µA
0
-60
-40
-20
0
20
40
60
80
100
T
A
– TEMPERATURE (°C)
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
6
Test Circuits
Pulse
Generator
tr = 5ns
ZO= 50Ω
+5V
IF = 7.5 mA
IF = 3.75 mA
Input
(IF)
VCC
1
2
3
4
8
7
6
5
tPHL
tPLH
Output
(VO)
.1 µf
bypass
RL
CL
1.5 V
Output
(VO)
Input
Monitor
(IF)
90%
10%
Output
(VO)
GND
47
tf
tr
Fig. 12 Test Circuit and Waveforms for tPLH, tPHL, tr and tf
Pulse
Input
Monitor
(VE)
Generator
tr = 5ns
ZO= 50Ω
+5V
3.0 V
1.5 V
Input
(VE )
VCC
1
2
3
4
8
tEHL
tELH
7.5 mA
Output
(VO)
RL
7
.1 µf
1.5 V
bypass
Output
6
(VO)
CL
5
GND
Fig. 13 Test Circuit tEHL and tELH
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
7
Test Circuits (Continued)
VCC
+5V
1
2
3
4
8
7
6
5
IF
.1 µf
bypass
350Ω
A
B
Output
(VO)
VFF
GND
VCM
Pulse Gen
Peak
VCM
0V
5V
VO
CMH
Switching Pos. (A), IF= 0
VO (Min)
VO (Max)
Switching Pos. (B), IF = 7.5 mA
VO
CML
0.5 V
Fig. 14 Test Circuit Common Mode Transient Immunity
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
8
Ordering Information
Option
S
Example Part Number
6N137S
Description
Surface Mount Lead Bend
SD
W
6N137SD
Surface Mount; Tape and Reel
0.4" Lead Spacing
6N137W
V
6N137V
VDE0884
WV
SV
6N137WV
VDE0884; 0.4” Lead Spacing
VDE0884; Surface Mount
VDE0884; Surface Mount; Tape and Reel
6N137SV
SDV
6N137SDV
Marking Information
1
2
2601
6
V XX YY T1
5
3
4
Definitions
1
Fairchild logo
2
3
Device number
VDE mark (Note: Only appears on parts ordered with VDE option –
See order entry table)
4
5
6
Two digit year code, e.g., ‘03’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
9
Tape Specifications
12.0 0.1
4.0 0.1
4.90 0.20
Ø1.55 0.05
1.75 0.10
4.0 0.1
0.30 0.05
7.5 0.1
16.0 0.3
10.30 0.20
13.2 0.2
Ø1.6 0.1
10.30 0.20
User Direction of Feed
0.1 MAX
Reflow Profile
300
250
200
150
100
50
215C, 10–30 s
225C peak
Time above 183C, 60–150 sec
Ramp up = 3C/sec
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
• Peak reflow temperature: 225C (package surface temperature)
• Time of temperature higher than 183C for 60–150 seconds
• One time soldering reflow is recommended
©2005 Fairchild Semiconductor Corporation
6N137, HCPL2601, HCPL2611, HCPL2630, HCPL2631 Rev. 1.0.8
www.fairchildsemi.com
10
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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