FSB50825AS [ONSEMI]
智能功率模块,250V,8A;型号: | FSB50825AS |
厂家: | ONSEMI |
描述: | 智能功率模块,250V,8A 电动机控制 |
文件: | 总12页 (文件大小:883K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2019 年 9 月
FSB50825AS
Motion SPM® 5 系列
特性
相关资料
• RD-FSB50450A - Reference Design for Motion SPM 5
• 通过 UL 第 E209204 号认证 (UL1557)
Series Ver.2
• 500 V RDS(on) = 0.45 Ω(最大值) FRFET MOSFET 三
相逆变器,带有栅极驱动器和保护功能
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
• 内置自举二极管以简化印刷电路板布局
• AN-9080 - User’s Guide for Motion SPM 5 Series V2
• 低端 MOSFET 的三个独立开源引脚用于三相电流感测
• 高电平有效接口,可用于 3.3 / 5 V 逻辑电平,施密特触
发脉冲输入
概述
FSB50825AS 是一款先进的 Motion SPM® 5 模块,为交
流感应、无刷直流电机和 PMSM 电机提供非常全面的高
性 能 逆 变 器 输 出 平 台。这 些 模 块 综 合 优 化 了 内 置
MOSFETs (FRFET® 技术)的栅极驱动以最小化电磁干
扰和能量损耗。同时也提供多重模组保护特性,集成欠压
闭锁和热量监测。内置的高速 HVIC 只需要一个单电源电
压,将 逻 辑 电 平 栅 极 输 入 转 化 为 适 合 驱 动 模 块 内 部
• 针对低电磁干扰进行优化
• 内置于 HVIC 的温度感测
• 用于栅极驱动和欠压保护的 HVIC
• 绝缘等级:1500 Vrms / 分钟
• 湿度敏感等级 (MSL) 3
MOSFET
的高电压,高电流驱动信号。独立的开源
MOSFET 端子在每个相位均有效,可支持大量不同种类
的控制算法。
• 符合 RoHS 标准
应用
• 小功率交流电机驱动器的三相逆变器驱动
封装标识与定购信息
器件标识
器件
封装
卷尺寸
包装类型
数量
FSB50825AS
FSB50825AS
SPM5Q-023
330 mm
450
卷带和卷盘
©2012 飞兆半导体公司
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www.fairchildsemi.com
FSB50825AS Rev. C4
绝对最大额定值
逆变器部分 (单个 MOSFET,除非另有说明。)
符号
VDSS
*ID 25
*ID 80
*IDP
参数
工作条件
额定值
250
单位
V
单个 MOSFET 的漏极 - 源极电压
单个 MOSFET 的漏极持续电流
单个 MOSFET 的漏极持续电流
单个 MOSFET 的漏极峰值电流
单个 MOSFET 的漏极电流有效值
最大功耗
TC = 25°C
TC = 80°C
3.6
A
2.7
A
TC = 25°C, PW < 100 μs
TC = 80°C, FPWM < 20 kHz
TC = 25°C, 单个 MOSFET
9.0
A
*IDRMS
*PD
1.9
Arms
W
14.2
控制部分 (单个 HVIC,除非另有说明。)
符号
VCC
VBS
VIN
参数
工作条件
施加在 VCC 和 COM 之间
施加在 VB 和 VS 之间
额定值
单位
20
20
V
V
V
控制电源电压
高端偏压
-0.3 ~ VCC + 0.3
输入信号电压
施加在 VIN 和 COM 之间
自举二极管部分 (单个自举二极管,除非另有说明。)
符号
参数
工作条件
额定值
单位
VRRMB
最大重复反向电压
正向电流
V
A
250
0.5
* IFB
TC = 25°C
* IFPB
正向电流 (峰值)
TC = 25°C,脉冲宽度小于 1 ms
1.5
A
热阻
符号
参数
工作条件
额定值
单位
逆变器工作条件下的单个 MOSFET
(注 1)
°C/W
RθJC
结点 - 壳体的热阻
8.8
整个系统
符号
TJ
参数
工作条件
额定值
-40 ~ 150
-40 ~ 125
单位
°C
工作结温
存储温度
TSTG
°C
60 Hz,正弦波形, 1 分钟,连接陶
瓷基板到引脚
VISO
1500
Vrms
绝缘电压
注:
1. 关于壳体温度 (T )的测量点,参见图 4。
C
2. 标记为 “ * “ 的为计算值或设计因素。
©2012 飞兆半导体公司
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FSB50825AS Rev. C4
引脚描述
引脚号
1
引脚名
COM
VB(U)
VCC(U)
IN(UH)
IN(UL)
N.C
引脚描述
IC 公共电源接地
2
U 相高端 MOSFET 驱动的偏压
U 相 IC 和低端 MOSFET 驱动的偏压
U 相高端的信号输入
3
4
5
U 相低端的信号输入
6
无连接
7
VB(V)
VCC(V)
IN(VH)
IN(VL)
VTS
V 相高端 MOSFET 驱动的偏压
V 相 IC 和 低端 MOSFET 驱动的偏压
V 相高端的信号输入
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V 相低端的信号输入
HVIC 温度感测输出
VB(W)
VCC(W)
IN(WH)
IN(WL)
N.C
W 相高端 MOSFET 驱动的偏压
W 相 IC 和低端 MOSFET 驱动的偏压
W 相高端的信号输入
W 相低端的信号输入
无连接
P
直流输入正端
U, VS(U)
NU
高端 MOSFET 驱动的 U 相偏压接地输出
U 相的直流输入负端
NV
V 相的直流输入负端
V, VS(V)
NW
高端 MOSFET 驱动的 V 相偏压接地输出
W 相的直流输入负端
W, VS(W)
高端 MOSFET 驱动的 W 相偏压接地输出
(1) COM
(2) VB(U)
(3) VCC(U)
(4) IN (UH)
(5) IN (UL)
(17) P
VCC
HIN
VB
HO
VS
LO
(18) U, VS(U)
LIN
COM
(6) N.C
(19) NU
(20) NV
(7) VB(V)
(8) VCC(V)
(9) IN (VH)
(10) IN (VL)
VCC
HIN
LIN
VB
HO
VS
LO
(21) V, VS(V)
COM
VTS
(11) VTS
(12) V B(W)
(13) VCC(W)
(14) IN (WH)
(15) IN (WL)
VCC
HIN
VB
HO
VS
LO
(22) NW
(23) W, VS(W)
LIN
COM
(16)
N.C
图 1. 引脚布局和内部框图 (仰视图)
注:
®
3. 每个低端 MOSFET 的源极端子与 Motion SPM 5 中的电源接地或偏压接地不连接。外部连接应当如图 3 所示。
©2012 飞兆半导体公司
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FSB50825AS Rev. C4
电气特性 (TJ = 25°C, VCC = VBS = 15 V,除非另有说明。)
逆变器部分 (单个 MOSFET,除非另有说明。)
符号
BVDSS
IDSS
参数
工作条件
VIN = 0 V, ID = 1 mA (注 1)
VIN = 0 V, VDS = 250 V
最小值 典型值 最大值 单位
250
-
-
-
-
V
漏极-源极击穿电压
零栅极电压漏极电流
1
mA
漏极至源极静态导通
电阻
RDS(on)
VSD
V
V
CC = VBS = 15 V, VIN = 5 V, ID = 2.0 A
CC = VBS = 15 V, VIN = 0 V, ID = -2.0 A
-
-
0.33
-
0.45
1.2
Ω
漏极-源极二极管正向
电压
V
tON
tOFF
trr
-
-
-
-
-
950
520
150
100
10
-
-
-
-
-
ns
ns
ns
μJ
μJ
VPN = 150 V, VCC = VBS = 15 V, ID = 2.0 A
IN = 0 V ↔ 5 V, 电感负载 L = 3 mH
高端和低端 MOSFET 开关
(注 2)
V
开关时间
EON
EOFF
VPN = 200 V, VCC = VBS = 15 V, ID = IDP, VDS
BVDSS, TJ = 150°C
=
RBSOA
反向偏压安全工作区
整个区域
高端和低端 MOSFET 开关 (注 3)
控制部分 (单个 HVIC,除非另有说明。)
符号
参数
工作条件
最小值 典型值 最大值 单位
VCC = 15 V,
IN = 0 V
IQCC
-
-
200
μA
VCC 静态电流
BS 静态电流
施加在 VCC 和 COM 之间
V
VBS = 15 V,
施加在 VB(U) - U,
VB(V) - V, VB(W) - W
IQBS
-
-
100
μA
V
V
V
V
V
V
IN = 0 V
UVCCD
UVCCR
UVBSD
UVBSR
7.4
8.0
7.4
8.0
8.0
8.9
8.0
8.9
9.4
9.8
9.4
9.8
V
V
V
V
CC 欠压保护检测电平
CC 欠压保护复位电平
BS 欠压保护检测电平
BS 欠压保护复位电平
低端欠压保护 (图 8)
高端欠压保护 (图 9)
VTS
mV
600
-
790
980
2.9
-
HVIC 温度感测电压输出
导通阈值电压
VCC = 15 V, THVIC = 25°C (注 4)
VIH
VIL
-
-
V
V
逻辑高电平
施加在 VIN 和 COM 之间
0.8
关断阈值电压
逻辑低电平
自举二极管部分 (单个自举二极管,除非另有说明。)
符号
VFB
trrB
参数
工作条件
最小值 典型值 最大值 单位
-
-
2.5
80
-
-
V
正向电压
IF = 0.1 A, TC = 25°C (注 5)
IF = 0.1 A, TC = 25°C
ns
反向恢复时间
注:
®
1. BV
是 Motion SPM 5 产品中的单个 MOSFET 的漏极和源极端子之间的绝对最大额定电压。考虑到寄生电感,V 应远低于该值,因此 V 在任何情况下不得超过 BV
。
DSS
DSS
PN
PN
2. t 和 t
包括内部驱动 IC 的传输延迟。所列出的数值是在实验室测试条件下测得,在实际应用中因为印刷电路板和布线的差异,数值也会有所不同。请参阅图 6 介绍的开关
ON
OFF
时间定义,以及图 7 中的开关测试电路。
3. 每个 MOSFET 在开关工作时的峰值电流和电压也应在安全工作区 (SOA) 的范围内。请参阅图 7 中的 RBSOA 测试电路,它与开关测试电路相同。
4. V 只能用作模块的温度感测,但不能自动关闭 MOSFETs
ts
5. 内置自举二极管其阻抗特性约为 15 ꢀ。请参阅图 2。
©2012 飞兆半导体公司
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FSB50825AS Rev. C4
推荐工作条件
符号
参数
工作条件
最小值 典型值 最大值 单位
VPN
VCC
-
13.5
13.5
3.0
0
150
200
16.5
16.5
VCC
0.6
-
V
V
电源电压
施加在 P 和 N 之间
15.0
控制电源电压
施加在 VCC 和 COM 之间
施加在 VB 和 VS 之间
VBS
15.0
V
高端偏压
VIN(ON)
VIN(OFF)
tdead
-
-
V
输入导通阈值电压
输入关断阈值电压
防止桥臂直通的死区时间
PWM 开关频率
施加在 VIN 和 COM 之间
V
VCC = VBS = 13.5 ~ 16.5 V, TJ ≤ 150°C
TJ ≤ 150°C
1.0
-
-
μs
kHz
fPWM
15
-
Built-In Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
VF [V]
TC = 25°C
图 2. 内置自举二极管特性 (典型值)
©2012 飞兆半导体公司
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FSB50825AS Rev. C4
These values depend on PWM control algorithm
* Example Circuit : V phase
C
1
+15 V
VDC
P
V
HIN
0
LIN
0
Output
Note
VCC
HIN
LIN
VB
HO
VS
LO
Inverter
Output
Z
Both FRFET Off
Low side FRFET On
High side FRFET On
Shoot through
R
5
0
1
0
VDC
1
0
C3
C5
COM
VTS
1
1
Forbidden
Z
R
3
N
Open Open
Same as (0,0)
C4
One Leg Diagram of Motion SPM® 5 Product
C2
10 μF
*
Example of Bootstrap Param: ters
C = C2 = 1 μF Ceramic Capacitor
1
图 3. 推荐的 MCU 接口和自举电路及其参数
注:
1. 自举电路的参数取决于 PWM 算法。上述为开关频率为 15 kHz 时的参数的典型例子。
2. Motion SPM 5 产品和 MCU (虚线显示部分)的每个输入端的 RC 耦合 (R 和 C )和 C ,可用于防止由浪涌噪声产生的错误信号。
5
5
4
3. 印刷电路板图形中的粗线应尽量短且粗,以减少电路中的寄生电感,从而导致浪涌电压的降低。旁路电容 C , C 和 C 应具有良好的高频特性,以吸收高频纹波电流。
1
2
3
图 4. 壳体温度测量
注:
4. 将热电耦贴在 SPM 5 封装 (如果应用到,放在 SPM 5 封装和散热片中间)的散热片的顶部,以获得正确的温度测量数值。
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
40
60
80
100
120
140
160
THVIC [oC]
图 5. V 的温度曲线 (典型值)
TS
©2012 飞兆半导体公司
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FSB50825AS Rev. C4
VIN
VIN
Irr
120% of ID
100% of ID
VDS
ID
10% of ID
ID
VDS
tON
trr
tOFF
(a) Turn-on
(b) Turn-off
图 6. 开关时间定义
CBS
VCC
ID
VCC
HIN
LIN
VB
HO
VS
LO
L
VDC
+
VDS
-
COM
VTS
One Leg Diagram of Motion SPM® 5 Product
图 7. 开关和 RBSOA (单脉冲)测试电路 (低端)
Input Signal
UV Protection
Status
RESET
DETECTION
RESET
UVCCR
Low-side Supply, VCC
MOSFET Current
UVCCD
图 8. 欠压保护 (低端)
Input Signal
UV Protection
Status
RESET
DETECTION
RESET
UVBSR
High-side Supply, VBS
MOSFET Current
UVBSD
图 9. 欠压保护 (高端)
©2012 飞兆半导体公司
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FSB50825AS Rev. C4
C1
(1) COM
(2)VB(U)
(17)P
(3)VCC(U)
VCC
HIN
VB
HO
VS
LO
R5
(4)IN
(UH)
(18)U,VS(U)
(5)IN
(UL)
VDC
C3
LIN
C5
C2
COM
(6)N.C
(7)VB(V)
(8)VCC(V)
(19)NU
(20)NV
VCC
HIN
LIN
VB
HO
VS
LO
(9)IN
(VH)
(21)V,VS(V)
(10) IN
(VL)
M
COM
VTS
(11)VTS
(12)VB(W)
(13)VCC(W)
(22)NW
VCC
HIN
VB
HO
VS
LO
(14) IN
(WH)
(23)W,VS(W)
(15) IN
(WL)
LIN
COM
(16)N.C
C4
R4
For current-sensing and protection
15 V
Supply
C6
R3
图 10. 应用电路实例
注:
1. 关于引脚的位置,请参阅图 1。
®
2. Motion SPM 5 产品和 MCU 的每个输入端的 RC 耦合 (R 和 C , R 和 C ) 和 C ,能有效的防止由浪涌噪声产生的错误的输入信号。
5
5
4
6
4
3. 由于位于 COM 和低端 MOSFET 的源极端子之间, R 的压降会影响低端的开关性能和自举特性。为此,稳态情况下 R 的压降应小于 1 V。
3
3
4. 为避免浪涌电压和 HVIC 故障,接地线和输出端子之间的接线应短且粗。
5. 所有的滤波电容器应紧密连接到 Motion SPM 5 产品,它们应当具有能够很好的阻挡高频纹波电流的特性。
©2012 飞兆半导体公司
8
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FSB50825AS Rev. C4
封装轮廓详图
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和
/ 或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆
公司产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/dwg/MO/MOD23DE.pdf
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