FSA2275 [ONSEMI]
DPDT HiFi Audio Switch w/Negative Swing;![FSA2275](http://pdffile.icpdf.com/pdf2/p00334/img/icpdf/FSA2275_2057955_icpdf.jpg)
型号: | FSA2275 |
厂家: | ![]() |
描述: | DPDT HiFi Audio Switch w/Negative Swing 光电二极管 |
文件: | 总11页 (文件大小:453K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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August 2016
FSA2275 / FSA2275A — DPDT (0.5 ) HiFi Audio Switch w/
Negative Swing
Features
Description
The FSA2275 / FSA2275A is
Double-Pole Double-Throw (DPDT) analog switch with
negative swing audio capability. The
FSA2275 / FSA2275A features ultra-low audio RON of
0.5 (typical) at 2.5 V VCC. The FSA2275 / FSA2275A
operates over a VCC range of 2.5 V to 5.5 V, is fabricated
with sub-micron CMOS technology to achieve fast
switching speeds, and is designed for break-before-make
operation. To minimize pop and click during operation,
the turn on ramp time is selectable using an external
capacitor (C_EXT).
a
high-performance,
. VDD Operating Range: 2.5 to 5.5 V
. External Capacitor Connection for Pop and Click
Noise Suppression
. Power-Off Protection on Common Ports
. RON = 0.5 Ω (Typ.) at 2.5 V VDD
. THD+N = -105 dB; 2 VRMS, 20 kΩ Load; f = 1 kHz
. XTALK = -134 dB at 1 VRMS, 50 Ω Load; f = 1 kHz
. Off Isolation = -103 dB at 1 VRMS, 50 Ω Load; f = 1 kHz
. 12-Lead UMLP 1.8 mm x 1.8 mm
The
FSA2275 / FSA2275A
features
specifications that target a Hi-Fidelity audio quality into
THD+N
. Removed R_SHUNT resistors for FSA2275A
both 32 Ω headphones and line out type loads (>600 Ω).
The FSA2275A removes the shunt resistors which
improve noise immunity.
Applications
. Mobile Phone, Tablet, Notebook PC, Media Player
. Docking Station, TV, Set-Top Box, LCD Monitor
VDD
Charge Pump,
Oscillator &
POR
SEL
Control Logic
Pop and Click
C_EXT
Processor
Reduction
Slew Rate Control
MUTE
L1
LSPKR
L2
Audio
Source 1
RSHUNT
R1
Audio
Source 2
RSPKR
R2
RSHUNT
GND
Figure 1. Application Block Diagram
Ordering Information
Operating
Temperature Range
Packing
Method
Part Number
Top Mark
Package Description
FSA2275UMX
NJ
EX
12-Lead, UMLP, Quad, JEDEC MO252,
1.8 mm x1.8 mm
5000 Units
Tape and Reel
-40 to 85°C
FSA2275AUMX
© 2014 Fairchild Semiconductor Corporation
FSA2275 / FSA2275A • Rev. 1.7
www.fairchildsemi.com
Pin Configuration
1
1
12
L1
GND
L1
12
3
GND
3
LSPKR
L2
R1
L2
R1
LSPKR
BOTTOM
VIEW
TOP THROUGH
VIEW
RSPKR
SEL
RSPKR
SEL
9
6
R2
6
9
R2
Figure 2. Pin Assignment (Top Through View)
Figure 3. Pin Assignment (Bottom View)
Pin Descriptions
Pin
Name
Description
1
2
VDD
C_EXT
GND
LSPKR
RSPKR
SEL
MUTE
GND
R2
Power Supply (2.5 to 5.5 V)
Slow Turn On External Capacitor
Ground
3
4
Audio LSPPKR Common I/O Port
Audio RSPPKR Common I/O Port
Select Pin
5
6
7
Mute Enable - Active High
Ground
8
9
Audio – Right Channel Source2 I/O Port
Audio – Right Channel Source1 I/O Port
Audio – Left Channel Source2 I/O Port
Audio – Left Channel Source1 I/O Port
10
11
12
R1
L2
L1
Truth Table
Mute
SEL
Function
Resistor Terminations
0
0
0
1
L1 = LSPKR; R1 = RSPKR
L2 = LSPKR; R2 = RSPKR
RSHUNT(s) connect to L2/R2 (FSA2275 only)
RSHUNT(s) connect to L1/R1 (FSA2275 only)
L1 ≠ LSPKR; L2 ≠ LSPKR; R1 ≠ RSPKR
R2 ≠ RSPKR (All Paths Hi-Z)
;
;
1
1
0
1
RSHUNT(s) OPEN (FSA2275 only)
RSHUNT(s) OPEN (FSA2275 only)
L1 ≠ LSPKR; L2 ≠ LSPKR; R1 ≠ RSPKR
R2 ≠ RSPKR (All Paths Hi-Z)
© 2014 Fairchild Semiconductor Corporation
FSA2275 / FSA2275A • Rev. 1.7
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min. Max. Unit
VDD
Supply/Control Voltage
Control Input Voltage
-0.3
-0.3
6.0
6.0
V
V
VCNTRL
SEL, MUTE
VSW
DC Switch I/O Voltage
L1, L2, R1, R2, LSPKR, RSPKR
-3.5
3.5
V
IIK
ESD Input Diode Current
Switch I/O Current
-50
mA
mA
ISW
700
Human Body Model, ANSI/ESDA/ JEDEC
JS-001-2012
All Pins
5
ESD
Charged Device Model, JEDEC: JESD22-C101
IEC 61000-4-2 System
2
8
kV
Contact
Air Gap
15
-40
-65
TA
Absolute Maximum Operating Temperature
Storage Temperature
+85
°C
°C
TSTG
+150
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance. Fairchild does not recommend exceeding them or
designing to Absolute Maximum Ratings.
Symbol
VDD
Parameter
Min.
2.5
Typ.
Max.
5.5
Unit
Supply Voltage
3.3
V
V
VSW
DC Switch I/O Voltage
L1, L2, R1, R2, LSPKR, RSPKR
SEL, MUTE
-3.0
0
3.0
VCNTRL Control Input Voltage
3.6
100
25
VDD
V
ISW
TA
DC Switch I/O Current
mA
°C
Ambient Operating Temperature
-40
+85
© 2014 Fairchild Semiconductor Corporation
FSA2275 / FSA2275A • Rev. 1.7
www.fairchildsemi.com
3
DC Characteristics
VDD = 2.5 V to 5.5 V, VDD (Typ.) = 3.3 V, TA = -40°C to 85°C, and TA (Typ.) = 25°C, unless otherwise specified.(1)
TA=-40°C to
+85°C
Symbol
Parameter
Condition
VDD (V)
Unit
Min. Typ. Max.
VCNTRL Pin Input High Voltage
(SEL, MUTE)
VIH
VIL
C_EXT = FLOAT
1.6
0
VDD
0.4
V
V
VCNTRL Pin Input Low Voltage
(SEL, MUTE)
C_EXT = FLOAT
L1, R1, L2, R2 = -3 V to 3 V,
LSPKR, RSPKR = Float (ISW = 0 mA)
MUTE=LOW, SEL=0 or VDD
C_EXT = FLOAT, Figure 6
Switch-to-GND ON Leakage
Current
ION
INO_MUTE
IOFF
2.5 to 5.5 -1.0
2.5 to 5.5 -1.0
0.1
0.1
0.1
0.1
1.0
1.0
1.0
0.5
µA
µA
µA
µA
L1, R1, L2, R2 = -3 V to 3 V,
Switch-to-GND OFF Leakage LSPKR, RSPKR = Float (ISW = 0 mA)
Current (when Muted)
MUTE = HIGH, SEL = 0 or VDD
C_EXT = FLOAT, Figure 5
L1, R1, L2, R2 = -3 V to 3 V,
LSPKR, RSPKR = Float (ISW = 0 mA)
Input Leakage Current(2)
0
-1.0
MUTE = LOW, SEL = 0 or VDD
C_EXT = FLOAT
,
Control Input Leakage
Current(3)
L1, R1, L2, R2 = -3 V to 3 V,
LSPKR, RSPKR = Float (ISW = 0 mA),
C_EXT = FLOAT
IIN
2.5 to 5.5 -0.5
(SEL, MUTE)
MUTE = LOW, SEL = 0 or VDD,
C_EXT = FLOAT
IDD
VDD Supply Current
5.5
7
18
µA
MUTE = HIGH, SEL = 0 or VDD,
C_EXT = FLOAT
IDDZ
VDD Hi-Z Supply Current
5.5
5.5
1
µA
µA
MUTE = LOW, SEL = 0 or 1.8 V
SEL = LOW, MUTE = 0 or 1.8 V
C_EXT = FLOAT
Increase in IDD per Control
Voltage
IDDT
15
ISW = 100 mA, VSW = -3 V to 3 V
C_EXT = FLOAT, Figure 4
RON
Switch On Resistance
2.5 to 5.5
0.5
1.0
Ω
On Resistance Matching,
Channel to Channel
ISW = 100 mA, VSW = -3 V to 3 V
C_EXT = FLOAT
ΔRON
2.5 to 5.5
2.5 to 5.5
65
1
mΩ
mΩ
ISW = 100 mA, VSW = -3 V to 3 V
C_EXT = FLOAT
RFLAT
On Resistance Flatness
Click and Pop Resistance
RSHUNT (FSA2275 only)
(L1, L2, R1, R2, LSPKR, RSPKR
8
VLX_RX = 3.0 V, MUTE = 0,
SEL = 0 or VDD, C_EXT = FLOAT
6
10
14
kΩ
)
Notes:
1. Limits over the recommended temperature operating range (TA = -40°C to +85°C) are correlated by statistical
quality.
2. Only valid for VSW > 0 V.
3. VMUTE ≤ VDD + 0.3 otherwise additional input leakage current may flow.
© 2014 Fairchild Semiconductor Corporation
FSA2275 / FSA2275A • Rev. 1.7
www.fairchildsemi.com
4
AC Characteristics
VDD = 2.5 V to 5.5 V, VDD (Typ.) = 3.3 V. TA = -40°C to 85°C. TA (Typ.) = 25°C, unless otherwise specified
TA=- 40°C to +85°C
VDD
(V)
Symbol
Parameter
Condition
Unit
Min. Typ. Max.
L1 = R1 = L2 = R2 = 1.5 V,
2.5,
3.3,
5.5
C_EXT=Float
C_EXT=0.1 µF
C_EXT=Float
C_EXT=0.1 µF
0.4
100
20
LSPKR , RSPKR = 50 Ω to
GND SEL= 0 or VDD;
See Figure 7 and Figure 8
Enable Time
(MUTE to Output)
tMUTE_ON
ms
L1 = R1= L2 = R2 = 1.5 V,
2.5,
3.3,
5.5
LSPKR , RSPKR = 50 Ω to
GND, SEL = 0 or VDD;
See Figure 7 and Figure 8
Disable Time
(MUTE to Output)
tON_MUTE
µs
20
L1 (L2) = R1 (R2) = 1.5 V,
L2 (L1) = R2 (R1) = 0 V
LSPKR , RSPKR = 50 Ω to
C_EXT=Float
C_EXT=0.1 µF
C_EXT=Float
C_EXT=0.1 µF
0.4
100
20
2.5,
3.3,
5.5
Turn On Time
(SEL to Output)
tON_SEL
ms
GND, SEL = 0 or VDD
;
MUTE = 0
See Figure 7 and Figure 8
L1 (L2) = R1 (R2) = 1.5 V,
L2 (L1) = R2 (R1) = 0 V
LSPKR , RSPKR = 50 Ω to
2.5,
3.3,
5.5
Turn On Time
(SEL to Output)
tOFF_SEL
µs
GND, SEL= 0 or VDD
MUTE = 0
;
20
See Figure 7 and Figure 8
L1 (L2) = R1 (R2) = 1.5 V, LSPKR
RSPKR = 50 Ω to GND,SEL = 0 or VDD
,
;
Break Before Make
tBBM
3.3
3.3
400
4.6
µs
Time (SEL to Output) C_EXT = FLOAT, MUTE = 0 V;
See Figure 7 and Figure 9
Pop n Click
dV/dt_PCS Suppression Output
L1 = L2 = +60 mV, R1 = R2 = -60 mV, LSPKR
RSPKR = 50 Ω to GND, SEL = 0 or VDD
,
;
V/s
Voltage Ramp Rate C_EXT = 0.1 µF, MUTE = HL Transition
f = 1 kHz, RL = 50 Ω, CL = 0 pF,
-103
-92
MUTE = 0 VSW =1 VRMS Figure 11
Off Isolation
OIRR
3.3
3.3
dB
dB
f = 1 MHz, RL = 50 Ω, CL = 0 pF,
MUTE = 0 VSW = 1 VRMS Figure 11
f = 1 kHz, RL = 50 Ω, CL = 0 pF,
-108
-99
MUTE = VDD; VSW = 1 VRMS Figure 11
Off Isolation-Muted
OIRRM
f = 1 MHz, RL = 50 Ω, CL = 0 pF,
MUTE = VDD; VSW = 1 VRMS Figure 11
Cross Talk
(Adjacent)
f = 1 kHz, RL = 50 Ω, VSW = 1 VRMS
Figure 12
XTALK
BW
3.3
3.3
-134
dB
-3 dB Bandwidth
RL = 50 Ω Figure 10
230
-111
MHz
VPRSS = VDD + 100 mVRMS
RL = 20 kΩ or 32 Ω ( at LSPKR
RSPKR), MUTE = 0 or VDD
VSW = GND or Float
f = 217 Hz
Power Supply
Rejection Ratio
,
f = 1 kHz
-103
PSRR
3.3
dB
f = 20 kHz
-89
0.00018
-115
%
dB
%
RL = 20 kΩ, f = 1 kHz, VSW = 2 VRMS with A-
weighted, Figure 15
3.3
3.3
3.3
0.00018
-115
Total Harmonic
Distortion + Noise
RL=600 Ω, f = 1 kHz, VSW = 2 VRMS with A-
weighted, Figure 15
THD+N
dB
%
0.00022
-113
RL = 32 Ω, f = 1 kHz, VSW = 1 VRMS with-A-
weighted, Figure 15
dB
© 2014 Fairchild Semiconductor Corporation
FSA2275 / FSA2275A • Rev. 1.7
www.fairchildsemi.com
5
Capacitance
Unless otherwise stated, VDD = 2.5 V to 5.5 V, VDD (Typ.) = 3.3 V, TA = -40°C to 85°C, and TA (Typ.) = 25°C.(4)
TA=- 40°C to +85°C
Symbol
Parameter
Condition
VCC (V)
Unit
Min.
Typ. Max.
On Capacitance
(Common Port)
f = 1 MHz, 100 mVPK-PK, 100 mV
DC bias MUTE = 0 V Figure 14
CON
3.3
3.3
3.3
22
pF
pF
pF
Off Capacitance
(Common Port)
f = 1 MHz, 100 mVPK-PK, 100 mV
DC bias MUTE = VDD Figure 13
COFF1
COFF2
25
14
Off Capacitance
(Non-Common Ports)
f = 1 MHz, 100 mVPK-PK, 100 mV
DC bias MUTE = 0 V Figure 13
Off Capacitance -
COFF_MUTE MUTED
(Non-Common Ports)
f = 1 MHz, 100 mVPK-PK, 100 mV
DC bias, MUTE = VDD
3.3
0
14
pF
pF
Control Input Pin
CCNTRL Capacitance
(MUTE, SEL)
SEL
3
6
f = 1 MHz, 100 mVPP
100 mV DC bias
,
MUTE
Note:
4. Limits over the recommended temperature operating range (TA=-40°C to +85°C) are correlated by statistical
quality control methods.
© 2014 Fairchild Semiconductor Corporation
FSA2275 / FSA2275A • Rev. 1.7
www.fairchildsemi.com
6
Test Diagrams
VON
INO
Float
V
SW
V
SW
Select
ISW
GND
GND
Select
GND
V
SEL= 0 or VDD
**Each switch port is tested separately
V
SEL = 0 or VDD
R
ON = VON / ISW
Figure 4. On Resistance
Figure 5. Off Leakage
VSW
ION
Float
VOUT
C
L
GND
R
L
R
S
A
GND
V
SW
V
SEL
Select
R L and CL are function of application
environment (see AC/DC Tables
GND
GND
)
VSEL= 0 or VDD
CLincludes test fixture and stray capacitance
Figure 6. On Leakage
Figure 7. Test Circuit Load
80%
20%
SEL or MUTE
LSPKR, RSPKR
80%
L1 (L) =R1 (R) =1.5V
L2 (Tx) = R2 (Rx) = 0V
20%
TOFF
TON
80%
LSPKR, RSPKR
L1 (L) =R1 (R) =0V
L2 (Tx) = R2 (Rx) = 1.5V
20%
TOFF
TON
Figure 8. Turn On/Off Waveforms (SEL or MUTE to Output)
SEL
TBBM
LSPKR=L1; RSPKR=R1
LSPKR=L2; RSPKR=R2
TBBM
VOUT
L1=L2=R1=R2=1.5V
90%
Figure 9. Break Before Make Interval Timing
© 2014 Fairchild Semiconductor Corporation
FSA2275 / FSA2275A • Rev. 1.7
www.fairchildsemi.com
7
Test Diagrams (Continued)
Network Analyzer
Network Analyzer
V
IN
VCNTRL
GND
GND
R
T
V
GND
SEL
GND
GND
GND
GND
RS and RT are function of application
environment (see AC/DC Tables)
R Land CL are function of application
environment (see AC/DC Tables)
OFF - Isolation = 20 Log (V
/ V
)
IN
CLincludes test fixture and stray capacitance
OUT
Figure 10. Bandwidth
Figure 11. Channel Off Isolation
Network Analyzer
V
IN
V
SEL
GND
= 0 or V
V
SEL
DD
GND
GND
R
T
F = 1MHz
GND
RS and RT are function of application
environment (see AC/DC Tables)
CROSSTALK = 20 Log (V
/ V
)
IN
OUT
Figure 12. Adjacent Channel Crosstalk
Figure 13. Channel Off Capacitance
Network Analyzer
V
IN
GND
V
SEL
V = 0 or VDD
SEL
F = 1MHz
GND
GND
RL and C are function of application
L
environment (see AC/DC Tables)
CL includes test fixture and stray capacitance
Figure 14. Channel On Capacitance
Figure 15. Total Harmonic Distortion (THD+N)
© 2014 Fairchild Semiconductor Corporation
FSA2275 / FSA2275A • Rev. 1.7
www.fairchildsemi.com
8
2.10
1.80±0.10
A
B
0.588
0.40
PIN #1
IDENT
0.563 (11X)
2.10
1
1.80±0.10
TOP VIEW
0.15±0.05
(12X) 0.20
0.50±0.05
RECOMMENDED LAND PATTERN
SEATING PLANE
0.025±0.025
C
PACKAGE
EDGE
SIDE VIEW
LEAD
LEAD
(0.20) 4X
OPTION 2
SCALE 2:1
OPTION 1
SCALE 2:1
3
6
0.40±0.05 (11X)
0.42±0.05
DETAIL A
0.40
1
0.20±0.05
PIN #1
IDENT
12
9
45°
DETAIL A
0.20±0.05 (12X)
SCALE 2:1
BOTTOM VIEW
0.10 C A B
0.05 C
NOTES:
A. PACKAGE DOES NOT CONFORM TO
ANY JEDEC STANDARD.
B. DIMENSIONS ARE IN MILLIMETERS.
C. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
D. DRAWING FILENAME: MKT-UMLP12ArevF
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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