FSA2275 [ONSEMI]

DPDT HiFi Audio Switch w/Negative Swing;
FSA2275
型号: FSA2275
厂家: ONSEMI    ONSEMI
描述:

DPDT HiFi Audio Switch w/Negative Swing

光电二极管
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August 2016  
FSA2275 / FSA2275A DPDT (0.5 ) HiFi Audio Switch w/  
Negative Swing  
Features  
Description  
The FSA2275 / FSA2275A is  
Double-Pole Double-Throw (DPDT) analog switch with  
negative swing audio capability. The  
FSA2275 / FSA2275A features ultra-low audio RON of  
0.5 (typical) at 2.5 V VCC. The FSA2275 / FSA2275A  
operates over a VCC range of 2.5 V to 5.5 V, is fabricated  
with sub-micron CMOS technology to achieve fast  
switching speeds, and is designed for break-before-make  
operation. To minimize pop and click during operation,  
the turn on ramp time is selectable using an external  
capacitor (C_EXT).  
a
high-performance,  
. VDD Operating Range: 2.5 to 5.5 V  
. External Capacitor Connection for Pop and Click  
Noise Suppression  
. Power-Off Protection on Common Ports  
. RON = 0.5 Ω (Typ.) at 2.5 V VDD  
. THD+N = -105 dB; 2 VRMS, 20 kΩ Load; f = 1 kHz  
. XTALK = -134 dB at 1 VRMS, 50 Load; f = 1 kHz  
. Off Isolation = -103 dB at 1 VRMS, 50 Load; f = 1 kHz  
. 12-Lead UMLP 1.8 mm x 1.8 mm  
The  
FSA2275 / FSA2275A  
features  
specifications that target a Hi-Fidelity audio quality into  
THD+N  
. Removed R_SHUNT resistors for FSA2275A  
both 32 headphones and line out type loads (>600 ).  
The FSA2275A removes the shunt resistors which  
improve noise immunity.  
Applications  
. Mobile Phone, Tablet, Notebook PC, Media Player  
. Docking Station, TV, Set-Top Box, LCD Monitor  
VDD  
Charge Pump,  
Oscillator &  
POR  
SEL  
Control Logic  
Pop and Click  
C_EXT  
Processor  
Reduction  
Slew Rate Control  
MUTE  
L1  
LSPKR  
L2  
Audio  
Source 1  
RSHUNT  
R1  
Audio  
Source 2  
RSPKR  
R2  
RSHUNT  
GND  
Figure 1. Application Block Diagram  
Ordering Information  
Operating  
Temperature Range  
Packing  
Method  
Part Number  
Top Mark  
Package Description  
FSA2275UMX  
NJ  
EX  
12-Lead, UMLP, Quad, JEDEC MO252,  
1.8 mm x1.8 mm  
5000 Units  
Tape and Reel  
-40 to 85°C  
FSA2275AUMX  
© 2014 Fairchild Semiconductor Corporation  
FSA2275 / FSA2275A • Rev. 1.7  
www.fairchildsemi.com  
Pin Configuration  
1
1
12  
L1  
GND  
L1  
12  
3
GND  
3
LSPKR  
L2  
R1  
L2  
R1  
LSPKR  
BOTTOM  
VIEW  
TOP THROUGH  
VIEW  
RSPKR  
SEL  
RSPKR  
SEL  
9
6
R2  
6
9
R2  
Figure 2. Pin Assignment (Top Through View)  
Figure 3. Pin Assignment (Bottom View)  
Pin Descriptions  
Pin  
Name  
Description  
1
2
VDD  
C_EXT  
GND  
LSPKR  
RSPKR  
SEL  
MUTE  
GND  
R2  
Power Supply (2.5 to 5.5 V)  
Slow Turn On External Capacitor  
Ground  
3
4
Audio LSPPKR Common I/O Port  
Audio RSPPKR Common I/O Port  
Select Pin  
5
6
7
Mute Enable - Active High  
Ground  
8
9
Audio Right Channel Source2 I/O Port  
Audio Right Channel Source1 I/O Port  
Audio Left Channel Source2 I/O Port  
Audio Left Channel Source1 I/O Port  
10  
11  
12  
R1  
L2  
L1  
Truth Table  
Mute  
SEL  
Function  
Resistor Terminations  
0
0
0
1
L1 = LSPKR; R1 = RSPKR  
L2 = LSPKR; R2 = RSPKR  
RSHUNT(s) connect to L2/R2 (FSA2275 only)  
RSHUNT(s) connect to L1/R1 (FSA2275 only)  
L1 LSPKR; L2 LSPKR; R1 RSPKR  
R2 RSPKR (All Paths Hi-Z)  
;
;
1
1
0
1
RSHUNT(s) OPEN (FSA2275 only)  
RSHUNT(s) OPEN (FSA2275 only)  
L1 LSPKR; L2 LSPKR; R1 RSPKR  
R2 RSPKR (All Paths Hi-Z)  
© 2014 Fairchild Semiconductor Corporation  
FSA2275 / FSA2275A • Rev. 1.7  
www.fairchildsemi.com  
2
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Min. Max. Unit  
VDD  
Supply/Control Voltage  
Control Input Voltage  
-0.3  
-0.3  
6.0  
6.0  
V
V
VCNTRL  
SEL, MUTE  
VSW  
DC Switch I/O Voltage  
L1, L2, R1, R2, LSPKR, RSPKR  
-3.5  
3.5  
V
IIK  
ESD Input Diode Current  
Switch I/O Current  
-50  
mA  
mA  
ISW  
700  
Human Body Model, ANSI/ESDA/ JEDEC  
JS-001-2012  
All Pins  
5
ESD  
Charged Device Model, JEDEC: JESD22-C101  
IEC 61000-4-2 System  
2
8
kV  
Contact  
Air Gap  
15  
-40  
-65  
TA  
Absolute Maximum Operating Temperature  
Storage Temperature  
+85  
°C  
°C  
TSTG  
+150  
Recommended Operating Conditions  
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended  
operating conditions are specified to ensure optimal performance. Fairchild does not recommend exceeding them or  
designing to Absolute Maximum Ratings.  
Symbol  
VDD  
Parameter  
Min.  
2.5  
Typ.  
Max.  
5.5  
Unit  
Supply Voltage  
3.3  
V
V
VSW  
DC Switch I/O Voltage  
L1, L2, R1, R2, LSPKR, RSPKR  
SEL, MUTE  
-3.0  
0
3.0  
VCNTRL Control Input Voltage  
3.6  
100  
25  
VDD  
V
ISW  
TA  
DC Switch I/O Current  
mA  
°C  
Ambient Operating Temperature  
-40  
+85  
© 2014 Fairchild Semiconductor Corporation  
FSA2275 / FSA2275A • Rev. 1.7  
www.fairchildsemi.com  
3
DC Characteristics  
VDD = 2.5 V to 5.5 V, VDD (Typ.) = 3.3 V, TA = -40°C to 85°C, and TA (Typ.) = 25°C, unless otherwise specified.(1)  
TA=-40°C to  
+85°C  
Symbol  
Parameter  
Condition  
VDD (V)  
Unit  
Min. Typ. Max.  
VCNTRL Pin Input High Voltage  
(SEL, MUTE)  
VIH  
VIL  
C_EXT = FLOAT  
1.6  
0
VDD  
0.4  
V
V
VCNTRL Pin Input Low Voltage  
(SEL, MUTE)  
C_EXT = FLOAT  
L1, R1, L2, R2 = -3 V to 3 V,  
LSPKR, RSPKR = Float (ISW = 0 mA)  
MUTE=LOW, SEL=0 or VDD  
C_EXT = FLOAT, Figure 6  
Switch-to-GND ON Leakage  
Current  
ION  
INO_MUTE  
IOFF  
2.5 to 5.5 -1.0  
2.5 to 5.5 -1.0  
0.1  
0.1  
0.1  
0.1  
1.0  
1.0  
1.0  
0.5  
µA  
µA  
µA  
µA  
L1, R1, L2, R2 = -3 V to 3 V,  
Switch-to-GND OFF Leakage LSPKR, RSPKR = Float (ISW = 0 mA)  
Current (when Muted)  
MUTE = HIGH, SEL = 0 or VDD  
C_EXT = FLOAT, Figure 5  
L1, R1, L2, R2 = -3 V to 3 V,  
LSPKR, RSPKR = Float (ISW = 0 mA)  
Input Leakage Current(2)  
0
-1.0  
MUTE = LOW, SEL = 0 or VDD  
C_EXT = FLOAT  
,
Control Input Leakage  
Current(3)  
L1, R1, L2, R2 = -3 V to 3 V,  
LSPKR, RSPKR = Float (ISW = 0 mA),  
C_EXT = FLOAT  
IIN  
2.5 to 5.5 -0.5  
(SEL, MUTE)  
MUTE = LOW, SEL = 0 or VDD,  
C_EXT = FLOAT  
IDD  
VDD Supply Current  
5.5  
7
18  
µA  
MUTE = HIGH, SEL = 0 or VDD,  
C_EXT = FLOAT  
IDDZ  
VDD Hi-Z Supply Current  
5.5  
5.5  
1
µA  
µA  
MUTE = LOW, SEL = 0 or 1.8 V  
SEL = LOW, MUTE = 0 or 1.8 V  
C_EXT = FLOAT  
Increase in IDD per Control  
Voltage  
IDDT  
15  
ISW = 100 mA, VSW = -3 V to 3 V  
C_EXT = FLOAT, Figure 4  
RON  
Switch On Resistance  
2.5 to 5.5  
0.5  
1.0  
On Resistance Matching,  
Channel to Channel  
ISW = 100 mA, VSW = -3 V to 3 V  
C_EXT = FLOAT  
ΔRON  
2.5 to 5.5  
2.5 to 5.5  
65  
1
mΩ  
mΩ  
ISW = 100 mA, VSW = -3 V to 3 V  
C_EXT = FLOAT  
RFLAT  
On Resistance Flatness  
Click and Pop Resistance  
RSHUNT (FSA2275 only)  
(L1, L2, R1, R2, LSPKR, RSPKR  
8
VLX_RX = 3.0 V, MUTE = 0,  
SEL = 0 or VDD, C_EXT = FLOAT  
6
10  
14  
kΩ  
)
Notes:  
1. Limits over the recommended temperature operating range (TA = -40°C to +85°C) are correlated by statistical  
quality.  
2. Only valid for VSW > 0 V.  
3. VMUTE VDD + 0.3 otherwise additional input leakage current may flow.  
© 2014 Fairchild Semiconductor Corporation  
FSA2275 / FSA2275A • Rev. 1.7  
www.fairchildsemi.com  
4
 
 
 
AC Characteristics  
VDD = 2.5 V to 5.5 V, VDD (Typ.) = 3.3 V. TA = -40°C to 85°C. TA (Typ.) = 25°C, unless otherwise specified  
TA=- 40°C to +85°C  
VDD  
(V)  
Symbol  
Parameter  
Condition  
Unit  
Min. Typ. Max.  
L1 = R1 = L2 = R2 = 1.5 V,  
2.5,  
3.3,  
5.5  
C_EXT=Float  
C_EXT=0.1 µF  
C_EXT=Float  
C_EXT=0.1 µF  
0.4  
100  
20  
LSPKR , RSPKR = 50 to  
GND SEL= 0 or VDD;  
See Figure 7 and Figure 8  
Enable Time  
(MUTE to Output)  
tMUTE_ON  
ms  
L1 = R1= L2 = R2 = 1.5 V,  
2.5,  
3.3,  
5.5  
LSPKR , RSPKR = 50 to  
GND, SEL = 0 or VDD;  
See Figure 7 and Figure 8  
Disable Time  
(MUTE to Output)  
tON_MUTE  
µs  
20  
L1 (L2) = R1 (R2) = 1.5 V,  
L2 (L1) = R2 (R1) = 0 V  
LSPKR , RSPKR = 50 to  
C_EXT=Float  
C_EXT=0.1 µF  
C_EXT=Float  
C_EXT=0.1 µF  
0.4  
100  
20  
2.5,  
3.3,  
5.5  
Turn On Time  
(SEL to Output)  
tON_SEL  
ms  
GND, SEL = 0 or VDD  
;
MUTE = 0  
See Figure 7 and Figure 8  
L1 (L2) = R1 (R2) = 1.5 V,  
L2 (L1) = R2 (R1) = 0 V  
LSPKR , RSPKR = 50 to  
2.5,  
3.3,  
5.5  
Turn On Time  
(SEL to Output)  
tOFF_SEL  
µs  
GND, SEL= 0 or VDD  
MUTE = 0  
;
20  
See Figure 7 and Figure 8  
L1 (L2) = R1 (R2) = 1.5 V, LSPKR  
RSPKR = 50 to GND,SEL = 0 or VDD  
,
;
Break Before Make  
tBBM  
3.3  
3.3  
400  
4.6  
µs  
Time (SEL to Output) C_EXT = FLOAT, MUTE = 0 V;  
See Figure 7 and Figure 9  
Pop n Click  
dV/dt_PCS Suppression Output  
L1 = L2 = +60 mV, R1 = R2 = -60 mV, LSPKR  
RSPKR = 50 to GND, SEL = 0 or VDD  
,
;
V/s  
Voltage Ramp Rate C_EXT = 0.1 µF, MUTE = HL Transition  
f = 1 kHz, RL = 50 , CL = 0 pF,  
-103  
-92  
MUTE = 0 VSW =1 VRMS Figure 11  
Off Isolation  
OIRR  
3.3  
3.3  
dB  
dB  
f = 1 MHz, RL = 50 , CL = 0 pF,  
MUTE = 0 VSW = 1 VRMS Figure 11  
f = 1 kHz, RL = 50 , CL = 0 pF,  
-108  
-99  
MUTE = VDD; VSW = 1 VRMS Figure 11  
Off Isolation-Muted  
OIRRM  
f = 1 MHz, RL = 50 , CL = 0 pF,  
MUTE = VDD; VSW = 1 VRMS Figure 11  
Cross Talk  
(Adjacent)  
f = 1 kHz, RL = 50 , VSW = 1 VRMS  
Figure 12  
XTALK  
BW  
3.3  
3.3  
-134  
dB  
-3 dB Bandwidth  
RL = 50 Figure 10  
230  
-111  
MHz  
VPRSS = VDD + 100 mVRMS  
RL = 20 kΩ or 32 Ω ( at LSPKR  
RSPKR), MUTE = 0 or VDD  
VSW = GND or Float  
f = 217 Hz  
Power Supply  
Rejection Ratio  
,
f = 1 kHz  
-103  
PSRR  
3.3  
dB  
f = 20 kHz  
-89  
0.00018  
-115  
%
dB  
%
RL = 20 kΩ, f = 1 kHz, VSW = 2 VRMS with A-  
weighted, Figure 15  
3.3  
3.3  
3.3  
0.00018  
-115  
Total Harmonic  
Distortion + Noise  
RL=600 Ω, f = 1 kHz, VSW = 2 VRMS with A-  
weighted, Figure 15  
THD+N  
dB  
%
0.00022  
-113  
RL = 32 Ω, f = 1 kHz, VSW = 1 VRMS with-A-  
weighted, Figure 15  
dB  
© 2014 Fairchild Semiconductor Corporation  
FSA2275 / FSA2275A • Rev. 1.7  
www.fairchildsemi.com  
5
Capacitance  
Unless otherwise stated, VDD = 2.5 V to 5.5 V, VDD (Typ.) = 3.3 V, TA = -40°C to 85°C, and TA (Typ.) = 25°C.(4)  
TA=- 40°C to +85°C  
Symbol  
Parameter  
Condition  
VCC (V)  
Unit  
Min.  
Typ. Max.  
On Capacitance  
(Common Port)  
f = 1 MHz, 100 mVPK-PK, 100 mV  
DC bias MUTE = 0 V Figure 14  
CON  
3.3  
3.3  
3.3  
22  
pF  
pF  
pF  
Off Capacitance  
(Common Port)  
f = 1 MHz, 100 mVPK-PK, 100 mV  
DC bias MUTE = VDD Figure 13  
COFF1  
COFF2  
25  
14  
Off Capacitance  
(Non-Common Ports)  
f = 1 MHz, 100 mVPK-PK, 100 mV  
DC bias MUTE = 0 V Figure 13  
Off Capacitance -  
COFF_MUTE MUTED  
(Non-Common Ports)  
f = 1 MHz, 100 mVPK-PK, 100 mV  
DC bias, MUTE = VDD  
3.3  
0
14  
pF  
pF  
Control Input Pin  
CCNTRL Capacitance  
(MUTE, SEL)  
SEL  
3
6
f = 1 MHz, 100 mVPP  
100 mV DC bias  
,
MUTE  
Note:  
4. Limits over the recommended temperature operating range (TA=-40°C to +85°C) are correlated by statistical  
quality control methods.  
© 2014 Fairchild Semiconductor Corporation  
FSA2275 / FSA2275A • Rev. 1.7  
www.fairchildsemi.com  
6
 
Test Diagrams  
VON  
INO  
Float  
V
SW  
V
SW  
Select  
ISW  
GND  
GND  
Select  
GND  
V
SEL= 0 or VDD  
**Each switch port is tested separately  
V
SEL = 0 or VDD  
R
ON = VON / ISW  
Figure 4. On Resistance  
Figure 5. Off Leakage  
VSW  
ION  
Float  
VOUT  
C
L
GND  
R
L
R
S
A
GND  
V
SW  
V
SEL  
Select  
R L and CL are function of application  
environment (see AC/DC Tables  
GND  
GND  
)
VSEL= 0 or VDD  
CLincludes test fixture and stray capacitance  
Figure 6. On Leakage  
Figure 7. Test Circuit Load  
80%  
20%  
SEL or MUTE  
LSPKR, RSPKR  
80%  
L1 (L) =R1 (R) =1.5V  
L2 (Tx) = R2 (Rx) = 0V  
20%  
TOFF  
TON  
80%  
LSPKR, RSPKR  
L1 (L) =R1 (R) =0V  
L2 (Tx) = R2 (Rx) = 1.5V  
20%  
TOFF  
TON  
Figure 8. Turn On/Off Waveforms (SEL or MUTE to Output)  
SEL  
TBBM  
LSPKR=L1; RSPKR=R1  
LSPKR=L2; RSPKR=R2  
TBBM  
VOUT  
L1=L2=R1=R2=1.5V  
90%  
Figure 9. Break Before Make Interval Timing  
© 2014 Fairchild Semiconductor Corporation  
FSA2275 / FSA2275A • Rev. 1.7  
www.fairchildsemi.com  
7
Test Diagrams (Continued)  
Network Analyzer  
Network Analyzer  
V
IN  
VCNTRL  
GND  
GND  
R
T
V
GND  
SEL  
GND  
GND  
GND  
GND  
RS and RT are function of application  
environment (see AC/DC Tables)  
R Land CL are function of application  
environment (see AC/DC Tables)  
OFF - Isolation = 20 Log (V  
/ V  
)
IN  
CLincludes test fixture and stray capacitance  
OUT  
Figure 10. Bandwidth  
Figure 11. Channel Off Isolation  
Network Analyzer  
V
IN  
V
SEL  
GND  
= 0 or V  
V
SEL  
DD  
GND  
GND  
R
T
F = 1MHz  
GND  
RS and RT are function of application  
environment (see AC/DC Tables)  
CROSSTALK = 20 Log (V  
/ V  
)
IN  
OUT  
Figure 12. Adjacent Channel Crosstalk  
Figure 13. Channel Off Capacitance  
Network Analyzer  
V
IN  
GND  
V
SEL  
V = 0 or VDD  
SEL  
F = 1MHz  
GND  
GND  
RL and C are function of application  
L
environment (see AC/DC Tables)  
CL includes test fixture and stray capacitance  
Figure 14. Channel On Capacitance  
Figure 15. Total Harmonic Distortion (THD+N)  
© 2014 Fairchild Semiconductor Corporation  
FSA2275 / FSA2275A • Rev. 1.7  
www.fairchildsemi.com  
8
2.10  
1.80±0.10  
A
B
0.588  
0.40  
PIN #1  
IDENT  
0.563 (11X)  
2.10  
1
1.80±0.10  
TOP VIEW  
0.15±0.05  
(12X) 0.20  
0.50±0.05  
RECOMMENDED LAND PATTERN  
SEATING PLANE  
0.025±0.025  
C
PACKAGE  
EDGE  
SIDE VIEW  
LEAD  
LEAD  
(0.20) 4X  
OPTION 2  
SCALE 2:1  
OPTION 1  
SCALE 2:1  
3
6
0.40±0.05 (11X)  
0.42±0.05  
DETAIL A  
0.40  
1
0.20±0.05  
PIN #1  
IDENT  
12  
9
45°  
DETAIL A  
0.20±0.05 (12X)  
SCALE 2:1  
BOTTOM VIEW  
0.10 C A B  
0.05 C  
NOTES:  
A. PACKAGE DOES NOT CONFORM TO  
ANY JEDEC STANDARD.  
B. DIMENSIONS ARE IN MILLIMETERS.  
C. LAND PATTERN RECOMMENDATION IS  
EXISTING INDUSTRY LAND PATTERN.  
D. DRAWING FILENAME: MKT-UMLP12ArevF  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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