FQP3N60C [ONSEMI]
功率 MOSFET，N 沟道，QFET®，600 V，3 A，3.4 Ω，TO-220;
| 型号： | FQP3N60C |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®，600 V，3 A，3.4 Ω，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - N-Channel QFET)
600 V, 3.4 W, 3.0 A
FQP3N60C
General Description
This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS
technology. This advanced MOSFET technology has been especially
tailored to reduce on−state resistance, and to provide superior
switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
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V
R
MAX
I MAX
D
DS
DS(ON)
600 V
3.4 W @ 10 V
3.0 A
Features
• 3.0 A, 600 V, R
= 3.4 W (Max.) at V = 10 V, I = 1.5 A
GS D
• Low Gate Charge (Typ. 10.5 nC)
DS(on)
D
• Low C (Typ. 5.0 pF)
rss
• 100% Avalanche Tested
• This is a Pb−Free Device
G
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Drain−Source Voltage
Gate−Source Voltage
Drain Current Continuous (T = 25°C)
Ratings
600
30
Unit
V
S
V
DSS
N−Channel MOSFET
V
GSS
V
I
D
3
A
C
Continuous (T = 100°C)
1.8
12
C
I
I
Drain Current Pulsed (Note 1)
A
mJ
A
G
DM
D
S
E
AS
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Note 1)
150
3
TO−220−3LD
CASE 340AT
AR
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
7.5
4.5
75
mJ
V/ns
W
AR
MARKING DIAGRAM
dv/dt
P
Power
Dissipation
(T = 25°C)
D
C
Derate above 25°C
0.62
W/°C
°C
$Y&Z&3&K
FQP
3N60C
T , T
Operating and Storage Temperature
Range
−55 to
+150
J
STG
T
L
Maximum Lead Temperature for
Soldering, 1/8″ from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
1. Repetitive rating: pulse−width limited by maximum junction temperature
2. L = 30 mH, I = 3 A, V = 50 V, R = 25 W, starting T = 25°C
AS
DD
G
DSS
J
3. I ≤ 3 A, di/dt ≤ 200 A/ms, V ≤ BV
, starting T = 25°C
J
SD
DD
FQP3N60C
= Specific Device Code
THERMAL CHARACTERITICS
Symbol
Parameter
Ratings
Unit
ORDERING INFORMATION
R
Maximum Thermal Resistance,
Junction to Case
1.67
°C/W
q
JC
Device
FQP3N60C
Package
Shipping
R
Maximum Thermal Resistance,
Junction to Ambient
62.5
°C/W
q
JA
TO−220−3LD
(Pb−Free)
50 Units/
Tube
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2021 − Rev. 6
FQP3N60C/D
FQP3N60C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
600
−
−
−
V
DSS
GS
D
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
0.6
V/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= 600 V, V = 0 V
−
−
−
−
−
−
1
mA
DSS
GS
= 480 V, T = 125 °C
10
C
I
Gate −Body Leakage Current, Forward
Gate −Body Leakage Current, Reverse
= 30 V, V = 0 V
100
−100
nA
nA
GSSF
DS
I
= −30 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 250 mA
2.0
−
−
4.0
3.4
−
V
W
S
GS(th)
DS(on)
DS
D
R
Static Drain−Source On−Resistance
Forward Transconductance
= 10 V, I = 1.5 A
2.8
3.5
D
g
FS
= 40 V, I = 1.5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25 V, V = 0 V, f = 1.0 MHz
−
−
−
435
45
5
565
60
8
pF
pF
pF
iss
oss
rss
GS
C
C
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn−On Rise Time
Turn-Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= 300 V, I = 3 A,
−
−
−
−
−
−
−
12
30
34
70
80
80
14
−
ns
ns
d(on)
DD
G
D
R
= 25 W
t
r
(Note 4)
t
35
ns
d(off)
t
f
35
ns
Q
V
DS
= 480 V, I = 3 A V = 10 V
10.5
2.1
4.5
nC
nC
nC
g
D
,
GS
(Note 4)
Q
gs
gd
Q
−
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
3
12
1.4
−
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 3 A
−
V
GS
S
t
rr
= 0 V, I = 3 A,
260
1.6
ns
mC
GS
S
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature.
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2
FQP3N60C
TYPICAL PERFORMANCE CHARACTERISTICS
1
1
0
10
10
V
GS
Top: 15.0 V
10.0 V
150°C
25°C
10
8.0 V
−55°C
*Notes:
7.0 V
6.5 V
6.0 V
5.5 V
*Notes:
1. 250 ms Pulse Test
1. V = 40 V
DS
2. T = 25°C
2. 250 ms Pulse Test
C
Bottom: 5.0 V
−1
10
0
10
1
0
10
10
6
10
2
4
8
V
DS
, Drain−Source Voltage [V]
V
GS
, Gate−Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
12
10
8
1
10
V
GS
= 10 V
6
150°C
0
10
4
25°C
V
GS
= 20 V
*Notes:
2
1. V = 0 V
GS
*Note: T = 25°C
J
2. 250 ms Pulse Test
−1
0
10
6
7
4
5
0.2 0.4
0.6
V , Source−Drain Voltage [V]
SD
0.8
1.0
1.2
1.4 1.6
3
0
1
2
I , Drain Current [A]
D
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
12
10
800
700
600
500
400
300
200
100
0
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
C
oss
rss
ds
gd
iss
V
V
V
= 120 V
= 300 V
= 480 V
= C
gd
DS
DS
DS
C
C
oss
8
6
4
2
0
*Notes:
1. V = 0 V
GS
rss
2. f = 1 MHz
*Note: I = 10 A
D
−1
1
0
10
10
10
4
6
8
10
0
2
12
V
DS
, Drain−Source Voltage [V]
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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3
FQP3N60C
TYPICAL PERFORMANCE CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
*Notes:
*Notes:
1. V = 10 V
1. V = 0 V
GS
0.5
GS
2. I = 250 mA
D
2. I = 1.5 A
D
0.0
−100
−50
0
50
100
150
200
−100
−50
0
50
100
150
200
T , Junction Temperature [°C]
J
T , Junction Temperature [°C]
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
3
2
1
0
Operation in This Area
is Limited by R
DS(on)
1
0
10
100 ms
1 ms
10
10 ms
*Notes:
1. T = 25°C
DC
−1
−2
10
C
2. T = 150°C
J
3. Single Pulse
10
25
50
75
100
125
150
0
1
2
3
10
10
10
10
T , Case Temperature [°C]
C
V
DS
, Drain−Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case
Temperature
Figure 9. Maximum Safe Operating Area
0
10
D=0.5
*Notes:
1. Z (t) = 1.67°C/W Max.
0.2
0.1
q
JC
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
0.05
0.02
0.01
−1
JM
C
DM
qJC
10
P
DM
t
1
t
2
Single Pulse
−2
10
10
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
t , Square Wave Pulse Duration [sec]
1
Figure 11. Transient Thermal Response Curve
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4
FQP3N60C
Same Type
as DUT
V
GS
50 KW
Q
g
12 V
200 nF
300 nF
V
DS
Q
Q
V
GS
gs
gd
DUT
I
G
= const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
BVDSS
BVDSS * VDD
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
FQP3N60C
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
QFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
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