FQP3P50 [ONSEMI]
功率 MOSFET,P 沟道,QFET®,-500 V,-2.7 A,4.9 Ω,TO-220;型号: | FQP3P50 |
厂家: | ONSEMI |
描述: | 功率 MOSFET,P 沟道,QFET®,-500 V,-2.7 A,4.9 Ω,TO-220 局域网 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:1138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2016
FQP3P50
P-Channel QFET® MOSFET
-500 V, -2.7 A, 4.9 Ω
Description
Features
•
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
-2.7 A, -500 V, RDS(on) = 4.9 Ω (Max.) @ VGS = -10 V,
ID = -1.35 A
•
•
•
Low Gate Charge (Typ. 18 nC)
Low Crss (Typ 9.5 pF)
100% Avalanche Tested
S
G
G
D
S
TO-220
D
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
FQP3P50
-500
Unit
V
V
I
Drain-Source Voltage
DSS
- Continuous (T = 25°C)
Drain Current
-2.7
A
D
C
- Continuous (T = 100°C)
-1.71
-10.8
± 30
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
250
mJ
A
-2.7
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.5
mJ
V/ns
W
AR
dv/dt
-4.5
P
Power Dissipation (T = 25°C)
85
D
C
- Derate above 25°C
0.68
W/°C
°C
T , T
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
-55 to +150
J
STG
T
300
°C
L
Thermal Characteristics
ꢀꢁꢂꢃꢄꢅ
θꢀꢁ
ꢆꢇꢈꢇꢂꢉꢊꢉꢈ
FQP3P50
1.47
ꢋꢌꢍꢊ
6ꢀꢀ?
6ꢀꢀ?
+
+
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
-' &
θꢀꢂ
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev. 2.4
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size Tape Width
Quantity
TO-220
FQP3P50
Tube
N/A
50 units
N/A
FQP3P50
Elerical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
V
I
= 0 V, I = -250 µA
Drain-Source Breakdown Voltage
-500
--
--
--
--
V
DSS
GS
D
∆BV
/ ∆T
Breakdown Voltage Temperature
Coefficient
DSS
= -250 µA, Referenced to 25°C
0.42
V/°C
D
J
I
V
V
V
V
= -500 V, V = 0 V
--
--
--
--
--
--
--
--
-1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= -400 V, T = 125°C
-10
DS
GS
GS
C
I
I
= -30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
-100
100
GSSF
DS
= 30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = -250 µA
Gate Threshold Voltage
-3.0
--
--
-5.0
4.9
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= -10 V, I = -1.35 A
3.9
D
g
= -50 V, I = -1.35 A
Forward Transconductance
--
2.35
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
510
70
660
90
pF
pF
pF
iss
V
= -25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
9.5
12
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
12
56
35
45
18
3.6
9.2
35
120
80
100
23
--
ns
ns
d(on)
V
= -250 V, I = -2.7 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= -400 V, I = -2.7 A,
DS
D
= -10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
-2.7
-10.8
-5.0
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = -2.7 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = -2.7 A,
270
1.5
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 62 mH, I = -2.7 A, V = -50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
I
≤ -2.7 A, di/dt ≤ 200 A/µs , V ≤ BV starting T = 25°C.
3.
SD
DD
DSS, J
Essentially independent of operating temperature.
4.
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev. 2.4
2
Typical Characteristics
101
101
VGS
Top :
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100
Bottom: -5.5 V
100
℃
150
-1
10
℃
25
※
Notes :
μ
※
Notes :
℃
-55
1. 250 s Pulse Test
1. VDS = -50V
℃
2. TC = 25
μ
2. 250 s Pulse Test
-2
-1
10
10
-1
100
101
2
4
6
8
10
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
101
8
7
6
5
4
3
2
VGS = - 10V
VGS = - 20V
100
℃
150
℃
25
※
Notes :
1. VGS = 0V
※
℃
Note : T = 25
J
μ
2. 250 s Pulse Test
-1
10
0
2
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1200
1000
800
600
400
200
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = C
C
gd
VDS = -100V
VDS = -250V
VDS = -400V
C
iss
6
Coss
4
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = -2.7 A
0
-1
10
100
101
0
2
4
6
8
10
12
14
16
18
20
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev. 2.4
3
(Continued)
Typical Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
※Notes :
1. VGS = 0 V
2. ID = -250 μA
※
Notes :
1. VGS = -10 V
2. ID = -1.35 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100
DC
-1
10
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-2
10
100
101
102
103
25
50
75
100
125
150
℃
TC, Case Temperature [
]
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
D = 0 .5
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
3 . T J M T C P D Z θ J C(t)
:
℃
/W M a x .
=
1 .4 7
0 .2
0 .1
-
=
*
M
1 0-1
0 .0 5
PDM
0 .0 2
t1
0 .0 1
t2
s in g le p u ls e
1 0-2
1 0 -5
1 0-4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev. 2.4
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
t on
t off
VDS
td(on)
tr
td(off)
tf
VDD
VGS
VGS
RG
10%
DUT
VGS
90%
VDS
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
LIAS
VDS
I D
t p
Time
VDD
VDS (t)
RG
VDD
ID (t)
VGS
DUT
IAS
t p
BVDSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev. 2.4
5
+
VDS
_
DUT
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
Gate Pulse Period
VGS
D =
10V
( Driver )
Body Diode Reverse Current
IRM
I SD
( DUT )
di/dt
FM , Body Diode Forward Current
VSD
I
VDS
( DUT )
Body Diode
VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev. 2.4
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev. 2.4
7
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
AccuPower™
F-PFS™
FRFET
OPTOPLANAR
®*
®
AttitudeEngine™
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
tm
Awinda
®
TinyBoost
TinyBuck
®
AX-CAP *
Power Supply WebDesigner™
®
®
BitSiC™
PowerTrench
TinyCalc™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
PowerXS™
®
TinyLogic
Programmable Active Droop™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
QFET
QS™
Quiet Series™
Current Transfer Logic™
Marking Small Speakers Sound Louder RapidConfigure™
TranSiC™
®
DEUXPEED
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
™
TriFault Detect™
TRUECURRENT *
Dual Cool™
®
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
μSerDes™
EfficentMax™
ESBC™
MicroPak™
SmartMax™
MicroPak2™
MillerDrive™
MotionMax™
SMART START™
®
®
Solutions for Your Success™
UHC
®
®
SPM
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Fairchild
®
®
MotionGrid
STEALTH™
Fairchild Semiconductor
FACT Quiet Series™
®
®
MTi
SuperFET
®
®
MTx
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FACT
®
MVN
FastvCore™
FETBench™
FPS™
®
mWSaver
®
OptoHiT™
OPTOLOGIC
SupreMOS
Xsens™
®
®
SyncFET™
仙童
Sync-Lock™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR
WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require
extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild
officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the
failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject
to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product
failure. In other respects, this product shall be subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed
by both Parties.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Terms of Use
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of
their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance,
failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers
from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized
Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handling and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I77
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev. 2.4
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号:
FQP45N03LJ69Z
Power Field-Effect Transistor, 45A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明