FQP3N50C-F080 [ONSEMI]
N 沟道 QFET® MOSFET;
| 型号： | FQP3N50C-F080 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 QFET® MOSFET |
| 文件： | 总11页 (文件大小：1052K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
QFET®
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using ON Semiconductor’s proprietary,
planar stripe, DMOS technology.
Features
•
•
•
•
•
•
3 A, 500 V, R
= 2.5 Ω @ V = 10 V
DS(on) GS
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Low gate charge ( typical 10 nC )
Low Crss ( typical 8.5 pF)
Fast switching
100 % avalanche tested
Improved dv/dt capability
D
{
●
◀
▲
●
●
G
{
G
D
S
TO-220
FQP Series
TO-220F
G D
S
FQPF Series
{
S
Absolute Maximum Ratings
Symbol
DSS
Parameter
Drain-Source Voltage
FQP3N50C
FQPF3N50C
Units
V
V
500
I
Drain Current
- Continuous (T = 25°C)
C
A
D
3
3 *
- Continuous (T = 100°C)
A
A
C
1.8
12
1.8 *
12 *
(Note 1)
I
Drain Current
- Pulsed
DM
V
E
Gate-Source Voltage
30
200
3
V
mJ
A
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
AS
I
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
6.2
4.5
mJ
V/ns
W
AR
dv/dt
P
Power Dissipation (T = 25°C)
C
D
62
25
- Derate above 25°C
Operating and Storage Temperature Range
W/°C
0.5
0.2
T , T
-55 to +150
300
°C
°C
J
STG
T
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
L
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQP3N50C
FQPF3N50C
Units
°C/W
°C/W
°C/W
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
2.0
4.9
θJC
θJS
θJA
R
R
0.5
--
62.5
62.5
Publication Order Number:
FQP3N50C/D
©2005 Semiconductor Components Industries, LLC.
October-2017,Rev. 1
Package Marking and Ordering Information
Device Marking
FQP3N50C
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FQP3N50C
FQPF3N50C
--
--
--
--
50
50
FQPF3N50C
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500
--
--
--
--
V
∆BVDSS
∆TJ
/
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
0.7
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250 µA
2.0
--
--
4.0
2.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.5 A
2.1
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 1.5 A
(Note 4)
--
1.5
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
280
50
365
65
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
8.5
11
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250 V, ID = 3 A,
--
--
--
--
--
--
--
10
25
35
25
10
1.5
5.5
30
60
80
60
13
--
ns
ns
RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
VDS = 400 V, ID = 3 A,
VGS = 10 V
nC
nC
nC
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
3
12
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 3 A
--
V
VGS = 0 V, IS = 3 A,
dIF / dt = 100 A/µs
170
0.7
ns
µC
(Note 4)
--
Qrr
Reverse Recovery Charge
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 40mH, I = 3A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 3A, di/dt ≤ 200A/µs, V ≤ BV
Starting T = 25°C
J
SD
DD
DSS,
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
101
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
100
10-1
150°C
Bottom : 5.0 V
100
25°
-55
°
Note
1. VDS = 40V
2. 250 s Pulse Test
Notes :
1. 250
µ
s Pulse Test
µ
2. TC = 25°C
10-1
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
8.0
7.5
7.0
6.5
VGS = 10V
6.0
5.5
5.0
4.5
100
4.0
VGS = 20V
3.5
3.0
2.5
150°C
25°C
Notes :
1. VGS = 0V
Note : TJ = 25°C
2. 250
µ
s Pulse Test
2.0
1.5
10-1
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
600
400
200
0
C
10
VDS = 100V
VDS = 250V
VDS = 400V
8
C
iss
Coss
6
4
Note ;
1. VGS = 0 V
C
rss
2. f = 1 MHz
2
Note : ID = 3A
10
0
-1
10
100
101
0
5
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
Notes :
0.9
1. VGS = 0 V
Notes :
1. VGS = 10 V
0.5
2. ID = 250µA
2. ID = 1.5 A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [
°C]
TJ, Junction Temperature [°C]
J
Figure 9-1. Maximum Safe Operating Area
of FQP3N50C
Figure 9-2. Maximum Safe Operating Area
of FQPF3N50C
102
102
Operation in This Area
Operation in This Area
is Limited by R DS(on)
is Limited by R DS(on)
101
101
100
1 ms
10 ms
100 ms
µs
100
1 ms
10 ms
100 ms
µs
100
100
DC
DC
Notes :
1. TC = 25
2. TJ = 150
3. Single Pulse
Notes :
1. TC = 25
2. TJ = 150
3. Single Pulse
-1
-1
10
10
°
C
C
°C
°C
°
-2
-2
10
10
100
101
102
103
100
101
102
103
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure10.MaximumDrainCurrent
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [°C]
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4
Typical Performance Characteristics (Continued)
Figure 11-1. ransient Thermal Response Curve of FQP3N50C
100
10-1
10-2
D=0.5
0.2
Notes :
1. ZθJC(t) = 2 °C/W Max.
0.1
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.05
0.02
0.01
single pulse
10-4
10-5
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 11-2. ransient Thermal Response Curve of FQPF3N50C
D=0.5
100
0.2
0.1
Notes :
1. ZθJC(t) = 4.9 °C/W Max.
2. Duty Factor, D=t1/t2
0.05
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
10-1
single pulse
10-4
10-2
10-5
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
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5
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
10V
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
L
1
2
----
--------------------
BVDSS - VDD
EAS
=
L IAS
VDS
I D
2
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
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6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS
( Driver )
--------------------------
Gate Pulse Period
D =
10V
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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7
Mechanical Dimensions
TO-220
4.50 0.20
+0.10
9.90 0.20
(8.70)
1.30
ø3.60 0.10
–0.05
1.27 0.10
1.52 0.10
0.80 0.10
+0.10
–0.05
0.50
2.40 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
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8
Mechanical Dimensions (Continued)
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
#1
0.35 0.10
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
9.40 0.20
Dimensions in Millimeters
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9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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