FQI27N25TU-F085 [ONSEMI]
N 沟道，MOSFET，250V，25.5A，131mΩ;
| 型号： | FQI27N25TU-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，MOSFET，250V，25.5A，131mΩ 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：511K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FQB27N25TM-F085/FQI27N25TU-F085
N-Channel MOSFET
250 V, 25.5 A, 131 mΩ
Features
D
Typ R
= 108mΩ at V = 10V, I = 25.5A
DS(on)
GS D
Typ Q
= 45nC at V = 10V, I = 27A
g(tot)
GS
D
UIS Capability
RoHS Compliant
Qualified to AEC Q101
G
S
Applications
D
TO-263AB
TO-262AB
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
G
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
250
±30
25.5
V
V
VGS
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
ID
A
See Figure 4
EAS
PD
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
972
417
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate above 25oC
3.3
TJ, TSTG Operating and Storage Temperature
-55 to + 150
0.3
RθJC
RθJA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
43
Package Marking and Ordering Information
Device Marking
FQB27N25TM
FQI27N25TU
Device
Package
TO-263AB
TO-262AB
Reel Size
330mm
Tube
Tape Width
Quantity
FQB27N25TM-F085
FQI27N25TU-F085
24mm
N/A
800 units
50 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25°C, L = 4.67mH, I = 20.4A, V = 100V during inductor charging and V = 0V during time in avalanche.
J
AS
DD
DD
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum
2
rating presented here is based on mounting on a 1 in pad of 2oz copper.
Publication Order Number:
FQB27N25TM-F085/D
©2014Semiconductor Components Industries, LLC.
December-2017,Rev. 3
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
250
-
-
-
-
-
1
V
V
DS=250V, TJ = 25oC
-
-
-
μA
uA
nA
VGS = 0V
TJ = 150oC(Note 4)
250
±100
IGSS
VGS = ±30V
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
3.0
4.1
108
265
5.0
131
310
V
TJ = 25oC
-
-
mΩ
mΩ
ID = 25.5A,
TJ = 150oC(Note 4)
V
GS= 10V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1800
350
45
-
-
pF
pF
pF
Ω
V
DS = 25V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
0.82
45
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VGS = 0 to 10V
VGS = 0 to 2V
49
4
-
nC
nC
nC
nC
VDD = 125V
ID = 27A
3.3
12
Qgd
23
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay
Rise Time
-
-
-
-
-
-
-
36
122
81
60
-
196
ns
ns
ns
ns
ns
ns
-
-
V
DD = 125V, ID = 27A,
VGS = 10V, RGEN = 25Ω
td(off)
tf
Turn-Off Delay
Fall Time
-
-
toff
Turn-Off Time
164
Drain-Source Diode Characteristics
I
SD = 25.5A, VGS = 0V
-
-
-
-
-
-
1.5
1.25
238
2.3
V
VSD
Source to Drain Diode Voltage
ISD = 12.75A, VGS = 0V
V
trr
Reverse--Recovery Time
Reverse--Recovery Charge
205
1.8
ns
nC
IF = 27A, dISD/dt = 100A/μs,
VDD=200V
Qrr
Notes:
4: The maximum value is specified by design at T = 150°C. Product is not tested to this condition in production.
J
www.onsemi.com
2
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
10
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
0.01
1E-3
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
θJA C
J
DM
θJA
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 2. Normalized Maximum Transient Thermal Impedance
www.onsemi.com
3
Typical Characteristics
1000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 - TC
I = I2
100
10
125
SINGLE PULSE
1
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Peak Current Capability
100
If R = 0
AV
t
= (L)(I )/(1.3*RATED BV
- V
)
AS
DSS
DD
100
10
1
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
1ms
STARTING TJ = 25oC
10
STARTING TJ = 125oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
10ms
T
J
= MAX RATED
100ms
o
T
C
= 25 C
1
0.1
1E-3
0.01
0.1
1
10
100
1000
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 4. Forward Bias Safe Operating Area
Figure 5. Unclamped Inductive Switching
Capability
100
200
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
100
VDD = 20V
10
TJ = 150 o
C
TJ = 150oC
TJ = 25 oC
10
1
TJ = 25oC
1
TJ = -55oC
0.1
2
4
6
8
10
12
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Transfer Characteristics
Figure 7. Forward Diode Characteristics
www.onsemi.com
4
Typical Characteristics
80
60
40
20
0
80μs PULSE WIDTH
Tj=150oC
80μs PULSE WIDTH
Tj=25oC
60
VGS
15V Top
10V
8V
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
40
20
0
7V
6V Bottom
6V
5V
0
4
8
12
16
20
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
Figure 9. Saturation Characteristics
550
440
330
220
110
0
2.8
ID = 25.5A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.4
2.0
1.6
1.2
0.8
0.6
TJ = 25oC
TJ = 150oC
ID = 25.5A
VGS = 10V
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. RDSON vs. Gate Voltage
Figure 11. Normalized RDSON vs. Junction
Temperature
1.4
1.2
VGS = VDS
ID = 1mA
I
= 250μA
D
1.2
1.0
0.8
0.6
0.4
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Gate Threshold Voltage vs.
Temperature
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
www.onsemi.com
5
Typical Characteristics
10000
10
8
ID = 27A
VDD = 80V
VDD = 100V
Ciss
VDD = 120V
1000
100
6
Coss
4
Crss
2
f = 1MHz
VGS = 0V
10
0.1
0
1
10
100
0
10
20
30
40
50
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. Capacitance vs. Drain to Source
Voltage
Figure 15. Gate Charge vs. Gate to Source
Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FQI27N25TU_F085
Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, I2PAK-3
FAIRCHILD
FQI27P06TU
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
FAIRCHILD
FQI28N15TU
Power Field-Effect Transistor, 28A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
FAIRCHILD
FQI2N50TU
Power Field-Effect Transistor, 2.1A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
FAIRCHILD
FQI2N60TU
Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明