FQD17N08LTM [ONSEMI]
N 沟道 QFET® MOSFET 80V，12.9A，100mΩ;
| 型号： | FQD17N08LTM |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 QFET® MOSFET 80V，12.9A，100mΩ 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：1383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
FQD17N08TF
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
FQD17N08TM
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
FQD17P06TF
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
FQD17P06TF_NL
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3
FAIRCHILD
FQD17P06TM
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
FQD18N20V2TF
Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明