FQD18N20V2 [FAIRCHILD]

200V N-Channel MOSFET; 200V N沟道MOSFET

FQD18N20V2


型号：	FQD18N20V2
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	200V N-Channel MOSFET 200V N沟道MOSFET 晶体晶体管开关脉冲局域网
文件：	总9页 (文件大小：615K)
下载：	下载PDF数据表文档文件

FQD18N20V2_09

200V N-Channel MOSFET

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27 FAIRCHILD

FQD18N20V2_13

N-Channel QFET MOSFET

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23 FAIRCHILD

FQD18N20V2TF

Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

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0 FAIRCHILD

FQD18N20V2TM

N-Channel QFET MOSFET 200 V, 15 A, 140 mOhm

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37 FAIRCHILD

FQD19N10

100V N-Channel MOSFET

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240 FAIRCHILD

FQD19N10_09

100V N-Channel MOSFET

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17 FAIRCHILD

FQD19N10_13

N-Channel QFET MOSFET

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23 FAIRCHILD

FQD19N10L

100V LOGIC N-Channel MOSFET

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208 FAIRCHILD

FQD19N10L_13

N-Channel QFET MOSFET

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30 FAIRCHILD

FQD19N10LTF

Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

FQD19N10LTM

暂无描述

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2 FAIRCHILD

FQD19N10LTM

15.6A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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0 ROCHESTER

FQD19N10TM

Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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0 FAIRCHILD

FQD19N10TM_NL

Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3

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1 FAIRCHILD

FQD1N50

500V N-Channel MOSFET

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57 FAIRCHILD

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