FPF1003A [ONSEMI]
IntelliMAX™ 高级负载管理产品;
| 型号： | FPF1003A |
| 厂家： | 
ONSEMI |
| 描述： | IntelliMAX™ 高级负载管理产品 驱动 接口集成电路 驱动器 |
| 文件： | 总10页 (文件大小：997K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IntelliMAXt Advanced Load
Management Products
FPF1003A
WLCSP6
CASE 567RJ
Description
The FPF1003A is low RDS P−channel MOSFET load switches with
controlled turn−on. The input voltage range operates from 1.2 V to
5.5 V to fulfill today’s ultra−portable device supply requirements.
Switch control is accomplished with a logic input (ON) capable of
interfacing directly with low−voltage control signal.
MARKING DIAGRAMS
Q2&K
&.&2&Z
2
Both FPF1003A is available in a spacesaving 1.0 x 1.5 mm
wafer−level chip−scale package.
Q2
&K
&.
&2
&Z
= Specific Device Code
= Lot Run Traceability Code
= Pin One Dot
= Date Code Format (Year and Week)
= Assembly Plant Code
Features
• 1.2 V to 5.5 V Input Voltage Operating Range
• Typical R
:
DS(ON)
♦ 30 mW at V = 5.5 V
IN
♦ 35 mW at V = 3.3 V
IN
ORDERING INFORMATION
• ESD Protected: Above 8000 V HBM
See detailed ordering and shipping information on page 8 of
this data sheet.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• PDA’s
• Cell Phones
• GPS Devices
• MP3 Players
• Digital Cameras
• Peripheral Ports
• Hot Swap Supplies
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
November, 2021 − Rev. 2
FPF1003A/D
FPF1003A
APPLICATION DIAGRAM
V
IN
V
OUT
To Load
OFF
ON
ON
GND
Figure 1. Typical Application
BLOCK DIAGRAM
V
IN
Turn−On Slew Rate
Controlled Driver
CONTROL
LOGIC
ON
ESD protection
V
OUT
Cutput Discharge
(Optional)
GND
Figure 2. Functional Block Diagram
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2
FPF1003A
PIN CONFIGURATION
Figure 3. WLCSP Bumps Facing UP
Figure 4. WLCSP Bumps Facing Down
A2
B2
C2
A1
B1
C1
Figure 5. 1.0 mm x 1.5 mm WLCSP Pin Assignments (Bottom View)
Table 1. PIN DEFINITIONS
Pin #
A2, B2
C2
Name
Description
Input to the Power Switch and the Supply Voltage for the IC
ON Control Input
V
IN
ON
A1, B1
C1
V
Output of the Power Switch
OUT
GND
Ground
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3
FPF1003A
Table 2. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min.
−0.3
−
Max.
6.0
2.0
1.2
+150
+125
85
Unit
V
V
IN
V , V , ON to GND
IN OUT
I
Maximum Continuous Switch Current
A
SW
P
Power Dissipation at T = 25°C (Note 1)
−
W
D
A
T
STG
Storage Junction Temperature
−65
−40
−
°C
T
A
Operating Temperature Range
°C
°C/W
V
q
Thermal Resistance, Junction−to−Ambient
JA
ESD
Electrostatic Discharge
Capability
Human Body Model, JESD22−A114
Charged Device Model, JESD22−C101
5500
1500
−
−
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Package power dissipation on one square inch pad, 2 oz.
Table 3. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min.
1.2
Max.
5.5
Unit
V
V
IN
Supply Voltage
T
A
Ambient Operating Temperature
−40
+85
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 4. ELECTRICAL CHARACTERISTICS
Unless otherwise noted, V = 1.2 V to 5.0 V, T = −40°C to +85°C; typical values are at V = 3.3 V and T = 25°C.
IN
A
IN
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Basic Operation
V
Supply Voltage
1.2
−
−
−
5.5
1
V
IN
I
Off Supply Current
Shutdown Current
V
V
V
= GND, OUT = Open
mA
mA
nA
mA
mW
Q(OFF)
ON
I
= GND, V
= GND, V
= 0 at V = 5.5, T = 85°C
−
−
1
SD
ON
OUT
OUT
IN
A
= 0 at V = 3.3, T = 85°C
−
10
−
100
1
ON
IN
A
I
Q
Quiescent Current
I
= 0 mA, V = V
ON
−
OUT
IN
R
On−Resistance
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
V
IN
V
ON
= 5.5 V, I
= 3.3 V, I
= 1.5 V, I
= 1.2 V, I
= 3.3 V, I
= 3.3 V, I
= 1 A, T = 25°C
−
20
25
50
95
30
−
30
35
75
150
42
42
−
ON
OUT
OUT
OUT
OUT
OUT
OUT
A
= 1 A, T = 25°C
−
A
= 1 A, T = 25°C
−
A
= 1 A, T = 25°C
−
A
= 1 A, T = 85°C
−
A
= 1 A, T = 40°C to 85°C
12
2
A
V
IH
ON Input Logic High Voltage
ON Input Logic Low Voltage
ON Input Leakage
= 1.2 V to 5.5 V
= 1.2 V
−
V
V
0.8
−
−
−
V
= 2.7 V to 5.5 V
= 1.2 V
−
0.8
0.35
1
IL
−
−
I
= V or GND
−
−
mA
ON
IN
Dynamic Characteristics
t
Turn−On Time
Turn−Off Time
V
V
= 3.3 V, R = 500 Ω, C = 0.1 mF, T = 25°C
−
−
13
45
−
−
ms
ms
ON
IN
L
L
A
t
= 3.3 V, R = 500 Ω, C = 0.1 mF, T = 25°C,
L L A
FPF1003A
OFF
IN
t
V
V
Rise Time
Fall Time
V
V
= 3.3 V, R = 500 Ω, C = 0.1 mF, T = 25°C
−
−
13
−
−
ms
ms
R
OUT
IN
L
L
A
t
= 3.3 V, R = 500 Ω, C = 0.1 mF, T = 2°C,
113
F
OUT
IN
L
L
A
FPF1003A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FPF1003A
TYPICAL PERFORMANCE CHARACTERISTICS
10
2.5
8
6
2.0
1.5
1.0
4
2
0
0.5
0.0
1
2
3
4
5
6
7
8
9
10
6
1
2
3
4
5
Supply Voltage (V)
Supply Voltage (V)
Figure 6. Quiescent Current vs. VIN
Figure 7. ON Threshold vs. VIN
16
10
14
12
10
8
8
6
4
6
4
2
0
2
0
−40
−15
10
35
60
85
−40
−15
10
35
60
85
T ,Junction Temperature (5C)
J
T ,Junction Temperature (5C)
J
Figure 8. Quiescent Current vs. Temperature
Figure 9. Quiescent Current (OFF) vs.
Temperature
1600
160
1400
1200
140
120
100
80
60
40
20
0
1000
800
600
400
200
0
−50
1
6
−25
0
25
50
75
100
2
3
4
5
T ,Junction Temperature (5C)
J
Supply Voltage (V)
Figure 10. ISWITCH−OFF Current vs.
Temperature
Figure 11. ISWITCH−OFF Current vs. VIN
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5
FPF1003A
TYPICAL PERFORMANCE CHARACTERISTICS
250
1.5
1.3
1.1
0.9
200
150
100
0.7
0.5
50
0
7
75
100
2
3
4
5
6
−50
−25
25
0
1
0
50
T , Junction Temperature (5C)
J
Supply Voltage (V)
Figure 13. RON vs. Temperature
Figure 12. RON vs. VIN
100
1000
V
= 3.3 V
V
= 3.3 V
N
L
L
N
L
L
R = 500 W
R = 500 W
C = 0.1 mF
C = 0.1 mF
FPF1003A T
OFF
FPF1003A T
FALL
100
10
10
−50
1
−50
−25
0
25
100
100
0
50
−25
25
75
75
50
T , Junction Temperature (5C)
J
T , Junction Temperature (5C)
J
Figure 14. tON/tOFF vs. Temperature
Figure 15. tR/tF vs. Temperature
V
ON
V
ON
2 V/DIV
2 V/DIV
I
OUT
I
OUT
10 mA/DIV
10 mA/DIV
V
OUT
V
OUT
2 V/DIV
2 V/DIV
50 ms /DIV
50 ms /DIV
Figure 16. FPF1003A tON Response
Figure 17. FPF1003A tOFF Response
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6
FPF1003A
TYPICAL PERFORMANCE CHARACTERISTICS
V
ON
V
ON
2 V/DIV
2 V/DIV
I
I
OUT
OUT
200 mA/DIV
200 mA/DIV
V
OUT
V
OUT
2 V/DIV
2 V/DIV
2 ms /DIV
50 ms /DIV
Figure 19. FPF1003A tOFF Response
Figure 18. FPF1003A tON Response
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7
FPF1003A
DESCRIPTION OF OPERATION
Input Capacitor
FPF1003A is low−R
controlled turn−on. The core of each device is a 30 mW
P−Channel MOSFET and
functioning over an input operating range of 1.2 to 5.5 V.
P−channel load switches with
Switch control is accomplished with a logic input (ON)
capable of interfacing directly with low− voltage control
signal.
DS(ON)
a
controller capable of
APPLICATION INFORMATION
To Load
V
OUT
V
IN
FPF1003A
GND
Battery
1.2 V − 5.5 V
Ω
R1 = 499
ON
OFF
m
C2 = 0.1
F
m
C1 = 1
F
Figure 20. Typical Application
Input Capacitor
turns off. Due to the integral body diode in the PMOS switch,
a C greater than C is recommended. A C greater
To limit the voltage drop on the input supply caused by
transient inrush currents when the switch turns on into
a discharged load capacitor or short−circuit, a capacitor
IN
OUT
OUT
than C can cause V
to exceed V when the system
IN
OUT
IN
supply is removed. This could result in current flow through
needs to be placed between V and GND. A 0.1 mF ceramic
the body diode from V
to V .
IN
OUT
IN
capacitor, C , must be placed close to the V pin. A higher
IN
IN
Board Layout
value of C can be used to further reduce the voltage drop
IN
For best performance, all traces should be as short as
possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize
the effects that parasitic trace inductances may have on
normal and short−circuit operation. Using wide traces for
experienced as the switch is turned on into a large capacitive
load.
Output Capacitor
A 0.1 mF capacitor, C , should be placed between
OUT
VOUT and GND. This capacitor prevents parasitic board
inductance from forcing V below GND when the switch
V , V
IN
, and GND minimizes the parasitic electrical
OUT
effects and case−to−ambient thermal impedance.
OUT
ORDERING INFORMATION
Input
Buffer Discharge
Output
ON Pin
Activity
Packaging
Quantity
†
Part Number
Top Mark Switch
Q2
Package
Shipping
2
FPF1003A
30 mΩ, Schmitt NA
Active
HIGH
1.0 x 1.5 mm Wafer−Level
3000
Tape &
Reel
PMOS
Chip−Scale Package
(WLCSP)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
IntelliMAX is trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP6 1.48x0.98x0.582
CASE 567RJ
ISSUE O
DATE 30 NOV 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16576G
WLCSP6 1.48x0.98x0.582
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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