FPF1005 [ONSEMI]
IntelliMAX™ 先进负载管理产品;
| 型号： | FPF1005 |
| 厂家： | 
ONSEMI |
| 描述： | IntelliMAX™ 先进负载管理产品 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总10页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IntelliMAXt Advanced Load
Pin 1
Management Products
FPF1005 - FPF1006
Bottom
Top
General Description
The FPF1005 & FPF1006 are low R P−Channel MOSFET load
DS
WDFN6 2x2, 0.65P
switches with CMOS controlled turn−on targeting small package load
switch applications. The input voltage range operates from 1.2 V to
5.5 V. Switch control is by a logic input (ON) capable of interfacing
directly with low voltage control signals. In FPF1006, 120 ꢀ on−chip
load resistor is added for output quick discharge when switch is
turned off.
CASE 511CY
MARKING DIAGRAM
6
4
Both FPF1005 & FPF1006 are available in a small 2X2
MicroFET−6 pin plastic package.
&Z&2&K
10x
Features
• 1.2 to 5.5 V Input Voltage Range
1
&Z = Assembly Plant Code
&2 = 2−Digit Date Code (Year and Week)
&K = 2−Digit Lot Run Traceability Code
10x = Device Code (x = 5, 6,)
3
• Typical R
• Typical R
= 50 mꢀ @ V = 5.5 V
DS(ON)
IN
= 55 mꢀ @ V = 3.3 V
DS(ON)
IN
• ESD Protected, above 2000 V HBM
• These Devices are Pb−Free and are RoHS Compliant
Applications
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
• PDAs
• Cell Phones
• GPS Devices
• MP3 Players
• Digital Cameras
• Peripheral Ports
• Hot Swap Supplies
• RoHS Compliant
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
September, 2021 − Rev. 8
FPF1006/D
FPF1005 − FPF1006
ORDERING INFORMATION
Input
Buffer
Output
Discharge
ON Pin
Activity
†
Part Number
FPF1005
Switch
Package
Shipping
55 mꢀꢁ PMOS
55 mꢀꢁ PMOS
Schmitt
Schmitt
NA
Active HIGH
Active HIGH
(WDFN6), 2x2, 0.65P
(WDFN6), 2x2, 0.65P
3000 / Tape & Reel
3000 / Tape & Reel
FPF1006
120 ꢀ
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TYPICAL APPLICATION CIRCUIT
TO LOAD
V
V
OUT
IN
FPF1005/6
OFF ON
ON
C
−
OUT
GND
C
IN
Figure 1. Typical Application Circuit
FUNCTIONAL BLOCK DIAGRAM
V
IN
Turn−On Slew Rate
Controlled Driver
CONTROL
LOGIC
ON
ESD protection
V
OUT
FPF1005/6
Output Discharge
(Optional)
GND
Figure 2. Functional Block Diagram
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2
FPF1005 − FPF1006
PIN CONFIGURATION
GND
6
5
4
1
2
3
ON
7
GND
V
V
V
V
OUT
IN
IN
OUT
(Bottom View)
Figure 3. Pin Configuration
PIN DESCRIPTION
Pin
4, 5
2, 3
6, 7
1
Name
Function
V
OUT
Switch Output: Output of the power switch
V
IN
Supply Input: Input to the power switch and the supply voltage for the IC
GND
ON
Ground
ON/OFF Control Input
ABSOLUTE MAXIMUM RATINGS
Parameter
Min
−0.3
−
Max
6
Unit
V
V
, V
, ON to GND
IN
OUT
Maximum Continuous Switch Current
1.5
1.2
85
150
86
−
A
Power Dissipation @ T = 25°C (Note 1)
−
W
A
Operating Temperature Range
Storage Temperature
−40
−65
−
°C
°C
°C/W
V
Thermal Resistance, Junction to Ambient
Electrostatic Discharge Protection
HBM
MM
2000
200
−
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Package power dissipation on 1 square inch pad, 2 oz. copper board.
RECOMMENDED OPERATING RANGE
Parameter
Min
1.2
Max
5.5
85
Unit
V
V
IN
Ambient Operating Temperature, T
−40
°C
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
FPF1005 − FPF1006
ELECTRICAL CHARACTERISTICS (V = 1.2 to 5.5 V, T = −40 to +85°C unless otherwise noted. Typical values are at V = 3.3 V
IN
A
IN
and T = 25°C.)
A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
BASIC OPERATION
Operating Voltage
Quiescent Current
Off Supply Current
Off Switch Current
V
1.2
−
−
−
5.5
1
V
IN
I
Q
I
= 0 mA, V = V
ꢂ A
ꢂ A
ꢂ A
nA
mꢀ
OUT
IN
ON
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= GND, OUT = open
−
−
1
Q(off)
ON
ON
ON
I
= GND, V
= GND, V
= 0 V, @ V = 5.5 V, T = 85°C
−
−
1
SD(off)
OUT
OUT
IN
A
= 0 V, @ V = 3.3 V, T = 25°C
−
10
50
55
95
165
75
−
100
70
80
135
250
120
1.25
1.10
0.50
−
IN
A
On−Resistance
R
= 5.5 V, T = 25°C
−
ON
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
ON
A
= 3.3 V, T = 25°C
−
A
= 1.5 V, T = 25°C
−
A
= 1.2 V, T = 25°C
−
A
Output Pull Down Resistance
ON Input Logic Low Voltage
R
V
= 3.3 V, V = 0 V, T = 25°C, FPF1006
−
ꢀ
PD
ON
A
V
= 5.5 V
= 4.5 V
= 1.5 V
= 5.5 V
= 4.5 V
= 1.5 V
−
V
IL
−
−
−
−
ON Input Logic High Voltage
2.00
1.75
0.75
−1
−
V
IH
−
−
−
−
ON Input Leakage
DYNAMIC
= V or GND
−
1
ꢂ
A
IN
Turn On Delay
Turn Off Delay
t
V
V
= 3.3 V, R = 500 ꢀ, C = 0.1 ꢂ F, T = 25°C
−
−
10
50
−
−
ꢂ s
ꢂ s
ON
IN
L
L
A
t
= 3.3 V, R = 500 ꢀ, C = 0.1 ꢂ F, T = 25°C,
OFF
IN
L
L
A
FPF1005
= 3.3 V, R = 500 ꢀ, C = 0.1 ꢂ F, R =120 ꢀ ꢁ
L_CHIP
V
IN
−
10
−
L
L
T = 25°C, FPF1006
A
V
V
Rise Time
Fall Time
t
V
= 3.3 V, R = 500 ꢀ, C = 0.1 ꢂ F, T = 25°C
−
−
10
−
−
ꢂ s
ꢂ s
OUT
R
IN
L
L
A
t
100
V
IN
= 3.3 V, R = 500 ꢀ, C = 0.1 ꢂ F, T = 25°C,
OUT
F
L
L
A
FPF1005
= 3.3 V, R = 500 ꢀ, C = 0.1 ꢂ F, R =120 ꢀ ꢁ
L_CHIP
V
IN
−
10
−
L
L
T = 25°C, FPF1006
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
4
FPF1005 − FPF1006
TYPICAL CHARACTERISTICS
10
8
2.5
MAX LIMIT
2.0
1.5
6
V
= V
IN
4
1.0
0.5
0.0
ON
TYPICAL
2
V
= 0 V
9
ON
0
1
2
3
4
5
6
7
8
10
1
2
3
4
5
6
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4. Quiescent Current vs. VIN
Figure 5. ON Threshold vs. VIN
16
14
12
10
8
10
8
6
V
IN
= 5.5 V
4
6
V
IN
= 5.5 V
4
2
2
V
= 3.3 V
IN
V
= 3.3 V
IN
0
0
−40
−40
−15
10
35
60
85
−15
10
35
60
85
T , JUNCTION TEMPERATURE (5C)
T , JUNCTION TEMPERATURE (5C)
J
J
Figure 6. Quiescent Current vs. Temperature
Figure 7. Quiescent Current (off) vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
V
IN
= 5.5 V
V
IN
= 3.3 V
−50
−25
0
25
50
75
100
1
2
3
4
5
6
T , JUNCTION TEMPERATURE (5C)
SUPPLY VOLTAGE (V)
J
Figure 8. ISWITCH−OFF Current vs. Temperature
Figure 9. ISWITCH−OFF Current vs. VIN
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5
FPF1005 − FPF1006
TYPICAL CHARACTERISTICS (continued)
400
350
300
250
200
150
100
50
1.5
I
= 1 A
OUT
VIN = 3.3 V
I
= 1 A
OUT
1.3
1.1
0.9
0.7
0.5
0
−50
−25
0
25
50
75
100
0
1
2
3
4
5
6
7
SUPPLY VOLTAGE (V)
T , JUNCTION TEMPERATURE (5C)
J
Figure 10. RON vs. VIN
Figure 11. RON vs. Temperature
100
1000
100
10
V
= 3.3 V
V
= 3.3 V
IN
IN
R = 500 ꢀ
R = 120 ꢀꢁ FPF1006
C = 0.1 ꢂ F
R = 500 ꢀ
R = 120 ꢀ ꢁ FPF1006
C = 0.1 ꢂ F
L
L
L
L
FPF1005 T
FALL
L
L
FPF1005 T
OFF
T
RISE
FPF1006 T
OFF
T
ON
FPF1006 T
FALL
0
−50
1
−50
−25
0
25
50
75
100
−25
0
25
50
75
100
T , JUNCTION TEMPERATURE (5C)
T , JUNCTION TEMPERATURE (5C)
J
J
Figure 12. TON/TOFF vs. Temperature
Figure 13. TRISE/TFALL vs. Temperature
V
ON
V
C
C
= 3.3 V
= 1 ꢂ F
V
C
C
= 3.3 V
= 1 ꢂ F
IN
IN
IN
2 V/DIV
V
ON
IN
2 V/DIV
= 0.1 ꢂ F
= 0.1 ꢂ F
OUT
OUT
R = 500 ꢀ
L
R = 500 ꢀ
L
I
OUT
I
OUT
10 mA/DIV
10 mA/DIV
V
OUT
2 V/DIV
V
OUT
2 V/DIV
50 ꢂ s/DIV
50 ꢂ s/DIV
Figure 14. FPF1005 TON Response
Figure 15. FPF1005 TOFF Response
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6
FPF1005 − FPF1006
TYPICAL CHARACTERISTICS (continued)
V
ON
V
ON
2 V/DIV
2 V/DIV
I
I
OUT
OUT
200 mA/DIV
200 mA/DIV
V
IN
= 3.3 V
V
IN
= 3.3 V
C
C
= 1 ꢂ F
C
C
= 1 ꢂ F
IN
IN
= 0.1 ꢂ F
= 0.1 ꢂ F
OUT
OUT
V
V
OUT
2 V/DIV
OUT
R = 10 ꢀ
R = 10 ꢀ
L
L
2 V/DIV
50 ꢂ s/DIV
5 ꢂ s/DIV
Figure 16. FPF1005 TON Response
Figure 17. FPF1005 TOFF Response
V
ON
V
C
C
= 3.3 V
= 1 ꢂ F
V
C
C
= 3.3 V
= 1 ꢂ F
IN
IN
IN
V
ON
2 V/DIV
IN
2 V/DIV
= 0.1 ꢂ F
= 0.1 ꢂ F
OUT
OUT
R = 500 ꢀ
L
R = 500 ꢀ
L
I
OUT
I
OUT
10 mA/DIV
10 mA/DIV
V
OUT
2 V/DIV
V
OUT
2 V/DIV
50 ꢂ s/DIV
50 ꢂ s/DIV
Figure 18. FPF1006 TON Response
Figure 19. FPF1006 TOFF Response
V
ON
2 V/DIV
V
ON
2 V/DIV
I
OUT
200 mA/DIV
I
OUT
200 mA/DIV
V
IN
= 3.3 V
V
IN
= 3.3 V
C
C
= 1 ꢂ F
C
C
= 1 ꢂ F
IN
IN
V
OUT
= 0.1 ꢂ F
= 0.1 ꢂ F
OUT
OUT
2 V/DIV
V
OUT
R = 10 ꢀ
R = 10 ꢀ
L
L
2 V/DIV
50 ꢂ s/DIV
5 ꢂ s/DIV
Figure 20. FPF1006 TON Response
Figure 21. FPF1006 TOFF Response
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7
FPF1005 − FPF1006
DESCRIPTION OF OPERATION
The FPF1005 & FPF1006 are low R
P−Channel
120 ꢀ on−chip load resistor for quick output discharge
DS(ON)
load switches with controlled turn−on. The core of each
device is a 55 mꢀ P−Channel MOSFET and a controller
capable of functioning over a wide input operating range of
1.2−5.5 V. The ON pin, an active HI TTL compatible input,
controls the state of the switch. The FPF1006 contains a
when the switch is turned off.
However, V
pin of FPF1006 should not be connected
OUT
directly to the battery source due to the discharge
mechanism of the load switch.
APPLICATION INFORMATION
Typical Application
V
V
OUT
IN
C
FPF1005/6
IN
R
L
V
= 3.3 V
C
IN
OUT
OFF ON
= 3.3 V
ON
−
GND
V
ON
Figure 22. Typical Application
Board Layout
Input Capacitor
To limit the voltage drop on the input supply caused by
transient in−rush currents when the switch turns−on into a
discharged load capacitor or a short−circuit, a capacitor
For best performance, all traces should be as short as
possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize
the effects that parasitic trace inductance may have on
normal and short−circuit operation. Using wide traces or
needs to be placed between V and GND. A 1 ꢂ F ceramic
IN
capacitor, C , placed close to the pins is usually sufficient.
IN
Higher values of C can be used to further reduce the
large copper planes for all pins (V , V
, ON and GND)
OUT
IN
IN
voltage drop during higher current application.
will help minimize the parasitic electrical effects along with
minimizing the case to ambient thermal impedance.
Output Capacitor
A 0.1 ꢂ F capacitor, C , should be placed between V
Evaluation Board Layout
OUT
OUT
FPF1005/6 Demo board has the components and circuitry
to demonstrate the load switch functions. Thermal
performance of the load switch can be improved
significantly by connecting the middle pad (pin 7) to the
GND area of the PCB.
and GND. This capacitor will prevent parasitic board
inductance from forcing V below GND when the switch
OUT
turns−off. Due to the integral body diode in the PMOS
switch, a C greater than C is highly recommended.
IN
OUT
A C
greater than C can cause V
to exceed V
OUT IN
OUT
IN
when the system supply is removed. This could result in
current flow through the body diode from V
to V .
OUT
IN
Figure 23. Demo Board Silk
Screen Top and Component
Assembly Drawing
Figure 24. Demo Board Top and
Surface Mount Top Layers View
(Pin 7 is Connected to GND)
Figure 25. Demo Board Bottom
Layer View
IntelliMAX is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511CY
ISSUE O
DATE 31 JUL 2016
0.05
C
2.0
A
1.72
1.68
2X
B
4
6
0.15
2.0
1.21
0.90
2.25
0.52(6X)
0.05
C
1
3
PIN#1 IDENT
TOP VIEW
2X
0.42(6X)
0.65
RECOMMENDED
LAND PATTERN
0.75 0.05
0.10
C
0.20 0.05
NOTES:
0.08
C
SIDE VIEW
C
0.025 0.025
A. PACKAGE DOES NOT FULLY CONFORM
TO JEDEC MO−229 REGISTRATION
SEATING
PLANE
B. DIMENSIONS ARE IN MILLIMETERS.
2.00 0.05
1.40 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.70)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
PIN #1 IDENT
(0.20)4X
1
3
0.32 0.05
(6X)
(0.40)
0.80 0.05
(0.60)
6
4
0.30 0.05
(6X)
C
0.65
0.10
0.05
A
B
1.30
C
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13613G
WDFN6 2X2, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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