FJP2160DTU [ONSEMI]
ESBC 额定 NPN 硅晶体管;
ONSEMI 
Is Now Part of
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www.onsemi.com
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2016
FJP2160D
ESBC™ Rated NPN Silicon Transistor
Applications
Description
The FJP2160D is a low-cost, high performance power
switch designed to provide the best performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, Smart Grid, or ignition
switches. The power switch is designed to operate up to
1600 volts and up to 3 amps while providing exceptionally
low on-resistance and very low switching losses.
• High Voltage and High Speed Power Switch
Application
• Emitter-Switched Bipolar/MOSFET Cascode
Application (ESBC™)
• Smart Meter, Smart Breakers,
HV Industrial Power Supplies
• Motor Driver and Ignition Driver
The ESBC™ switch is designed to be easy to drive using
off-the-shelf power supply controllers or drivers. The
ESBC™ MOSFET is a low-voltage, low-cost, surface
mount device that combines low-input capacitance and
fast switching, The ESBC™ configuration further mini-
mizes the required driving power because it does not
have Miller capacitance.
ESBC Features (FDC655 MOSFET)
VCS(ON)
IC
Equiv RCS(ON)
0.131 V
0.5 A
0.261 Ω(1)
• Low Equivalent On Resistance
• Very Fast Switch: 150 KHz
• Squared RBSOA: Up to 1600 V
• Avalanche Rated
The FJP2160D provides exceptional reliability and a
large operating range due to its square reverse-bias-safe-
operating-area (RBSOA) and rugged design. The device
is avalanche rated and has no parasitic transistors so is
not prone to static dv/dt failures.
• Low Driving Capacitance, no Miller Capacitance
(Typ. 12 pF Capacitance at 200 V)
• Low Switching Losses
• Reliable HV switch: No False Triggering due to
High dv/dt Transients.
C
2
C
FJP2160D
FDC655
B
1
B
TO-220
1
G
3
E
1.Base 2.Collector 3.Emitter
S
Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration(2)
Figure 1. Pin Configuration
Ordering Information
Part Number
Marking
Package
Packing Method
FJP2160DTU
J2160D
TO-220 3L
Tube
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
Absolute Maximum Ratings(3)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1600
800
V
12
V
2
A
ICP
Collector Current (Pulse)
Base Current
3
A
IB
1
A
IBP
Base Current (Pulse)
2
A
PD
Power Dissipation (TC = 25°C)
100
W
°C
°C
mJ
TJ
Operating and Junction Temperature Range
Storage Temperature Range
- 55 to +125
- 65 to +150
3.5
TSTG
EAS
Avalanche Energy (TJ = 25°C, 8 mH)
Note:
3. Pulse test: pulse width = 20 μs, duty cycle ≤ 10%
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Rθjc
Parameter
Max.
1.25
80
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Rθja
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICES
Parameter
Conditions
IC = 0.5 mA, IE = 0
Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
1600 1689
800 870
V
V
Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
IE = 0.5 mA, IC = 0
12.0 14.8
0.01
V
VCE = 1600 V, VBE = 0
VCE = 800 V, IB = 0
VEB = 12 V, IC = 0
100
100
500
35
μA
μA
μA
ICEO
0.01
IEBO
0.05
VCE = 3 V, IC = 0.4 A
VCE = 10 V, IC = 5 mA
IC = 0.25 A, IB = 0.05 A
IC = 0.5 A, IB = 0.167 A
IC = 1 A, IB = 0.33 A
IC = 500 mA, IB = 50 mA
IC = 2 A, IB = 0.4 A
VEB = 10 V, IC = 0, f = 1 MHz
VCB = 200 V, IE = 0, f = 1 MHz
IC = 0.1 A,VCE = 10 V
IF = 0.4 A
20
20
29
43
hFE
DC Current Gain
0.16 0.45
0.12 0.35
0.25 0.75
0.74 1.20
0.85 1.20
745 1000
15
VCE(sat) Collector-Emitter Saturation Voltage
V
V
VBE(sat) Base-Emitter Saturation Voltage
Cib
Cob
fT
Input Capacitance
pF
pF
Output Capacitance
Current Gain Bandwidth Product
5
MHz
0.76 1.20
0.83 1.50
VF
Diode Forward Voltage
V
IF = 1 A
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
3
ESBC Configured Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
fT
Itf
Current Gain Bandwidth Product IC = 0.1 A,VCE = 10 V
25
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Inductive Current Fall Time
137
350
120
100
137
35
V
GS = 10 V, RG = 47 Ω,
ts
Inductive Storage Time
VClamp = 500 V,
Vtf
Vtr
tc
Inductive Voltage Fall Time
Inductive Voltage Rise Time
Inductive Crossover Time
Inductive Current Fall Time
Inductive Storage Time
tp = 3.1 μs, IC = 0.3 A,
IB = 0.03 A, LC = 1 mH,
SRF = 480 kHz
Itf
VGS = 10 V, RG = 47 Ω,
ts
980
30
VClamp = 500 V,
Vtf
Vtr
tc
Inductive Voltage Fall Time
Inductive Voltage Rise Time
Inductive Crossover Time
tp = 10 μs, IC = 1 A,
IB = 0.2 A, LC = 1 mH,
SRF = 480 kHz
195
210
Maximum Collector Source Volt-
age at Turn-off without Snubber
hFE = 5, IC = 2 A
VGS = ±20 V
VCSW
1600
V
IGS(OS)
Gate-Source Leakage Current
Collector-Source On Voltage
Gate Threshold Voltage
1.0
nA
VGS = 10 V, IC = 2 A, IB = 0.67 A,
2.210
hFE = 3
VGS = 10 V, IC = 1 A, IB = 0.33 A,
0.321
0.131
hFE = 3
VCS(ON)
V
VGS = 10 V, IC = 0.5 A, IB = 0.17 A,
hFE = 3
VGS = 10 V, IC = 0.3 A, IB = 0.06 A,
hFE = 5
0.166
1.9
VBS = VGS, IB = 250 μA
VGS(th)
Ciss
QGS(tot)
V
Input Capacitance
(VGS = VCB = 0)
VCS = 25 V, f = 1 MHz
470
pF
Gate-Source Charge
VCB = 0
VGS = 10 V, IC = 8 A, VCS = 25 V
9
nC
VGS = 10 V, ID = 6.3 A
21
26
30
Static Drain-Source
On Resistance
VGS = 4.5 V, ID = 5.5 A
rDS(ON)
mΩ
VGS = 10 V, ID = 6.3 A, TJ = 125°C
Note:
4. Used typical FDC655 MOSFET values in table. Values can vary if other Fairchild MOSFETs are used.
© 2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FJP2160D Rev. 1.1
4
Typical Performance Characteristics
3
1A
VCE=10V
900m A
800m A
100
10
1
700m A
600m A
500m A
TJ=125o
C
2
400m A
300m A
TJ=25o
C
200m A
IB=100m A
1
0
0
1
2
3
4
5
6
7
1
10
100
1000
VCE[V], COLLECTOR EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 4. Static Characteristic
Figure 5. DC Current Gain
100
10
100
10
1
IC = 3 IB
IC = 5 IB
Ta = 125 o
C
Ta = 125 o
C
1
Ta = 25 o
C
Ta = 25 o
C
0.1
0.01
Ta = -25 o
C
Ta = - 25 o
C
0.1
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
hFE=3
Figure 7. Collector-Emitter Saturation Voltage
hFE=5
100
100
IC = 20 IB
IC = 10 IB
10
10
Ta = 125 o
C
Ta = 125 o
Ta = 25 o
C
C
Ta = 25 o
C
1
1
Ta = -25 o
C
Ta = -25 o
C
0.1
1E-3
0.1
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 8. Collector-Emitter Saturation Voltage
FE=10
Figure 9. Collector-Emitter Saturation Voltage
hFE=20
h
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
2
1
0
1000
100
10
TJ=25oC
3.0A
2.0A
Cob (Emitter Open)
1.0A
0.4A
IC=0.2A
Cob (Emitter Grounded)
1
1
10
100
1k
1
10
100
1000
10000
IB[mA], BASE CURRENT
COLLECTOR-BASE VOLTAGE[V]
Figure 10. Typical Collector Saturation Voltage
Figure 11. Capacitance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
250
ta = 25oC L=1mH SRF=480KHz
ta = 25oC L=1mH SRF=480KHz
225
hfe=10 common emitter
200
175
150
125
hfe=5 common emitter
hfe=5 common emitter
100
hfe=5 ESBC
hfe=10 common emitter
75
50
hfe=10 ESBC
hfe=5 ESBC
25
hfe=10 ESBC
0
0.2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 12. Inductive Load
Collector Current Fall-time (tf)
Figure 13. Inductive Load
Collector Current Storage time (tstg
)
300
200
ta = 25oC L=1mH SRF=480KHz
ta = 25oC L=1mH SRF=480KHz
280
260
240
220
200
180
160
140
120
100
80
180
160
140
120
100
80
hfe=5 ESBC
hfe=10 common emitter
hfe=5 common emitter
hfe=10 common emitter
hfe=10 ESBC
60
40
hfe=5 common emitter
20
hfe=5 ESBC
1.0 1.2
hfe=10 ESBC
1.4 1.6
60
0
0.2
0.2
0.4
0.6
0.8
1.0
1.2
1.8
2.0
0.4
0.6
0.8
1.4
1.6
1.8
2.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 14. Inductive Load
Figure 15. Inductive Load
Collector Voltage Fall-time (tf)
Collector Voltage Rise-time (tr)
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
6
Typical Performance Characteristics (Continued)
300
3
2
1
0
ta = 25oC L=1mH SRF=480KHz
280
VDD = +/-50V, RLOAD = 500KΩ
VBE(off)= 5V
260
240
hfe=5 ESBC
220
200
hfe=10 common emitter
180
hfe=5 common emitter
160
140
hfe=10 ESBC
120
100
80
0
200
400
600
800
1000 1200 1400 1600 1800
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 16. Inductive Load
Figure 17. BJT Reverse Bias Safe Operating Area
Collector Current/Voltage Crossover (tc)
3
TC = 25oC
VDD = +/-50V, RLOAD = 500Kohms
HFE = 4
Single 80us Pulse
10
2
1
0
1
0.1
0
500
1000
1500
2000
0
200
400
600
800 1000 1200 1400 1600 1800 2000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 18. ESBC RBSOA
Figure 19. Crossover Forward Bias Safe Operating
Area
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
TC [oC], CASE TEMPERATURE
Figure 20. Power Derating
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
7
Test Circuits
ꢀ
ꢀ
ꢀ
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
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sT
sT
}
A
pj
pi
A
pj
k|{
A
k|{
R\G}
ꢀ
ꢀ
ꢀ
ꢀ
Figure 22. Energy Rating Test Circuit
VCE
Figure 24. FBSOA
Figure 23. Ft Measurement
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
8
Test Circuits (Continued)
Figure 25. Simplified Saturated Switch Driver Circuit
Functional Test Waveforms
Figure 26. Crossover Time Measurement
90% Vce
90% Ic
10% Vce
10% Ic
Figure 27. Saturated Switching Waveform
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
9
Functional Test Waveforms (Continued)
Figure 29. Storage Time - ESBC FET
Gate (off) to Ic Fall-time
Figure 28. Storage Time - Common Emitter
Base turn off (Ib2) to Ic Fall-time
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
10
Very Wide Input Voltage Range Supply
- 8watt; SecReg: 3 cap input; Quasi Resonant
Y[}gWUZZh
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Figure 30. Very Wide Input Voltage Range Supply
Driving ESBC Switches
Fairchild
Proprietary
Figure 32. Vbias Supply Derived
Figure 31. Vcc Derived
Figure 33. Proportional Drive
© 2012 Fairchild Semiconductor Corporation
FJP2160D Rev. 1.1
www.fairchildsemi.com
11
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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