FJP3305TU

更新时间:2024-09-18 19:13:02
品牌:ROCHESTER
描述:4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN

FJP3305TU 概述

4A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN 功率双极晶体管

FJP3305TU 规格参数

生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.39
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:COMMERCIAL表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

FJP3305TU 数据手册

通过下载FJP3305TU数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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FJP3305  
High Voltage Fast-Switching NPN Power Transistor  
High Voltage Capability  
High Switching Speed  
Suitable for Electronic Ballast and Switching Regulator  
TO-220  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
700  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
400  
9
V
I
I
I
4
A
C
8
2
A
CP  
B
A
P
Collector Dissipation (T = 25°C)  
75  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
-65 ~ 150  
STG  
©2005 Fairchild Semiconductor Corporation  
FJP3305 Rev. B  
1
www.fairchildsemi.com  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Conditions  
Min.  
700  
400  
9
Typ.  
Max Units  
BV  
Collector-Base Breakdwon Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 500µA, I = 0  
V
V
V
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 5mA, I = 0  
B
= 500µA, I = 0  
C
I
I
V
V
= 700V, I = 0  
1
1
µA  
µA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
= 9V, I = 0  
C
h
h
DC Current Gain *  
V
V
= 5V, I = 1A  
19  
8
35  
40  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 2A  
C
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
I
= 1A, I = 0.2A  
0.5  
0.6  
1.0  
V
V
V
CE(sat)  
C
C
C
B
= 2A, I = 0.5A  
B
= 4A, I = 1A  
B
V
I
I
= 1A, I = 0.2A  
1.2  
1.6  
V
V
BE(sat)  
C
C
B
= 2A, I = 0.5A  
B
f
Current Gain Bandwidth Product  
Output Capacitance  
Turn On Time  
V
V
V
= 10V, I = 0.5A  
4
MHz  
pF  
T
CE  
CB  
CC  
C
C
= 10V, f = 1MHz  
65  
ob  
ON  
STG  
F
t
t
t
= 125V, I = 2A  
0.8  
4.0  
0.9  
µs  
C
I
= -I = 0.4A  
B1  
B2  
Storge Time  
µs  
R = 62.5Ω  
L
Fall Time  
µs  
* Pulse Test: PW 300µs, Duty Cycle 2%  
h
Classification  
FE  
Classification  
H1  
H2  
h
19 ~ 28  
26 ~ 35  
FE1  
2
www.fairchildsemi.com  
FJP3305 Rev. B  
Typical Performance Characteristics  
Figure 1. Static Characteristic  
Figure 2. DC Current Gain (R-Grade)  
100  
5.0  
4.5  
VCE = 5V  
4.0  
Ta = 75 O  
C
Ta = 125 O  
C
IB = 300mA  
3.5  
3.0  
2.5  
Ta = - 25 O  
C
Ta = 25 O  
C
10  
IB = 100mA  
2.0  
1.5  
IB = 50mA  
1.0  
0.5  
0.0  
1
0.01  
0.1  
1
10  
0
1
2
3
4
5
6
7
8
9
10  
IC [A], COLLECTOR CUTRRENT  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 3. DC Current Gain (O-Grade)  
Figure 4. Saturation Voltage (R-Grade)  
10  
100  
VCE = 5V  
IC = 4 IB  
Ta = 75 O  
C
Ta = 125 O  
C
Ta = 125 O  
C
1
Ta = - 25 O  
C
Ta = 25 O  
C
Ta = 75 O  
C
10  
Ta = - 25 O  
Ta = 25 O  
C
0.1  
C
0.01  
0.01  
1
0.01  
0.1  
1
10  
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CUTRRENT  
Figure 5. Saturatin Voltage (O-Grade)  
Figure 6. Saturation Voltage (R-Grade)  
10  
10  
IC = 4 IB  
IC = 4 IB  
Ta = 125 O  
C
Ta = 25 O  
C
1
1
Ta = - 25 O  
C
Ta = 125 O  
C
Ta = 75 O  
C
Ta = 75 O  
C
Ta = - 25 O  
Ta = 25 O  
C
0.1  
0.1  
C
0.01  
0.01  
0.01  
0.01  
0.1  
1
10  
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
3
www.fairchildsemi.com  
FJP3305 Rev. B  
Typical Performance Characteristics (Continued)  
Figure 7. Saturation Voltage (O-Grade)  
Figure 8. Switching Time  
10  
10  
IC = 4 IB  
tSTG  
Ta = 25 O  
C
Ta = - 25 O  
C
1
1
Ta = 125 O  
C
Ta = 75 O  
C
tF  
0.1  
0.1  
IB1 = - IB2 = 0.4A  
VCC = 125V  
0.01  
0.01  
0.01  
0.1  
0.1  
1
10  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area  
100  
10  
IC (Pulse)  
IC (DC)  
1ms  
5ms  
10  
500µs  
1
0.1  
0.01  
IB1=2A, RB2=0  
CC=50V, L=1mH  
TC = 25OC  
Single Pulse  
V
1
1
10  
100  
1000  
10  
100  
1000  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 11. Power Derating  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
Tc[oC], CASE TEMPERATURE  
4
www.fairchildsemi.com  
FJP3305 Rev. B  
Mechanical Dimensions  
TO-220  
4.50 ±0.20  
9.90 ±0.20  
(8.70)  
+0.10  
1.30  
–0.05  
ø3.60 ±0.10  
(45  
°
)
1.27 ±0.10  
1.52 ±0.10  
0.80 ±0.10  
+0.10  
–0.05  
0.50  
2.40 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
10.00 ±0.20  
Dimensions in Millimeters  
5
www.fairchildsemi.com  
FJP3305 Rev. B  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to  
be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
POP™  
Power247™  
PowerEdge™  
PowerSaver™  
PowerTrench®  
QFET®  
SPM™  
Stealth™  
A
CEx™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic®  
TINYOPTO™  
TruTranslation™  
UHC™  
HiSeC™  
QS™  
EcoSPARK™  
I2C™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
E2CMOS™  
i-Lo™  
ImpliedDisconnect™  
MSXPro™  
OCX™  
OCXPro™  
EnSigna™  
FACT™  
FACT Quiet Series™  
OPTOLOGIC®  
OPTOPLANAR™  
PACMAN™  
UltraFET®  
UniFET™  
VCX™  
Across the board. Around the world.™  
The Power Franchise®  
Programmable Active Droop™  
SILENT SWITCHER®  
SMART START™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY  
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT  
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support  
or sustain life, or (c) whose failure to perform when properly used  
in accordance with instructions for use provided in the labeling,  
can be reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I15  
6
www.fairchildsemi.com  
FJP3305 Rev. B  
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Suitable for Electronic Ballast and Switching Regulator  
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Product status/pricing/packaging  
Product  
FJP3305  
Product status  
Pb-free Status  
Pricing* Package type Leads  
Packing method  
Package Marking Convention**  
Line 1:  
(Fairchild logo)  
$Y  
Full Production  
$0.418  
TO-220  
3
BULK  
Line 2: &3 Line 3: J3305  
Line 1:  
(Fairchild logo)  
$Y  
FJP3305H1TU  
Full Production  
$0.418  
TO-220  
3
RAIL  
Line 2: &3 Line 3: J3305-1  
Line 1:  
(Fairchild logo)  
$Y  
FJP3305H2TU  
FJP3305TU  
Full Production  
Full Production  
$0.418  
$0.426  
TO-220  
TO-220  
3
3
RAIL  
RAIL  
Line 2: &3 Line 3: J3305-2  
Line 1:  
(Fairchild logo)  
$Y  
Line 2: &3 Line 3: J3305  
* Fairchild 1,000 piece Budgetary Pricing  
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please  
contact a Fairchild distributor to obtain samples  
Indicates product with Pb-free second-level interconnect. For more information click here.  
Package marking information for product FJP3305 is available. Click here for more information .  
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Models  
Package & leads  
TO-220-3  
Condition  
Temperature range  
PSPICE  
Vcc range  
Software version  
Revision date  
Electrical  
-65°C to 150°C  
0V to 8V  
OrCAD 10.3  
May 11, 2007  
back to top  
Qualification Support  
Click on a product for detailed qualification data  
Product  
FJP3305  
FJP3305H1TU  
FJP3305H2TU  
FJP3305TU  
back to top  
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FJP3305TU 相关器件

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