FGY75T120SWD [ONSEMI]
1200V 75A 场截止型VII分立式IGBT，Power TO247-3L封装;
| 型号： | FGY75T120SWD |
| 厂家： | 
ONSEMI |
| 描述： | 1200V 75A 场截止型VII分立式IGBT，Power TO247-3L封装 双极性晶体管 |
| 文件： | 总9页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT – Power, Co-PAK
N-Channel, Field Stop VII (FS7),
Non SCR, Power TO247-3L,
1200ꢀV, 1.7ꢀV, 75ꢀA
BV
V
I
CES
CE(SAT)
C
1200 V
1.7 V
75.0 A
PIN CONNECTIONS
FGY75T120SWD
C
Description
th
Using the novel field stop 7 generation IGBT technology and the
G
Gen7 Diode in TO247 3−lead package, FGY75T120SWD offers the
optimum performance with low switching and conduction losses for
high−efficiency operations in various applications like Solar, UPS and
ESS.
E
Features
• Maximum Junction Temperature − T = 175°C
J
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
G
C
E
• Smooth and Optimized Switching
• Low Switching Loss
TO247−3LD
CASE 340CD
• RoHS Compliant
MARKING DIAGRAM
Applications
• Boost and Inverter in Solar System
• UPS
• Energy Storage System
$Y&Z&3&K
FGY75T
120SWD
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Symbol
Value
1200
20
Unit
V
CES
V
GES
V
Transient Gate to Emitter Voltage
30
Collector Current
Power Dissipation
T
T
T
T
T
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C,
I
150
75
C
C
C
C
C
C
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
A
P
503
251
300
W
D
= 2−Digit Lot Traceability Code
FGY75T120SWD = Specific Device code
Pulsed Collector
Current
I
A
CM
t = 10 ꢀ s
p
ORDERING INFORMATION
(Note 1)
Diode Forward
Current
T
T
T
= 25°C
= 100°C
= 25°C,
I
150
75
C
C
C
F
Device
Package
Shipping
FGY75T120SWD
TO247−3LD
(Pb−Free)
30 Units /
Tube
Pulsed Diode
Maximum Forward
Current
I
300
FM
t = 10 ꢀ s
p
(Note 1)
Operating Junction and Storage
Temperature
T , T
−55 to 175
°C
J
STG
Lead Temperature for Soldering Purposes
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by max. Junction temperature.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
March, 2023 − Rev. 3
FGY75T120SWD/D
FGY75T120SWD
THERMAL CHARACTERISTICS
Parameter
Symbol
Max Value
Unit
Thermal Resistance, Junction to Case for IGBT
Thermal Resistance, Junction to Case for Diode
Thermal Resistance, Junction to Ambient
R
0.3
0.4
40
°C/W
ꢁ
JC
R
ꢁ
JA
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown
Voltage
BV
V
GE
V
GE
V
GE
V
GE
= 0 V, I = 5 mA
1200
−
666
−
−
V
mV/°C
ꢀ A
CES
C
Breakdown Voltage Temperature
Coefficient
ꢂ BV
/
ꢂ
T
= 0 V, I = 5 mA
−
−
−
−
CES
J
C
Collector to Emitter Cut−Off
Current
I
= 0 V, V = V
CES
40
400
CES
CE
Gate to Emitter Leakage Current
ON CHARACTERISTICS
I
= 20 V, V = 0 V
−
nA
GES
CE
Gate to Emitter Threshold Voltage
V
V
GE
V
GE
V
GE
= V , I = 75 mA
5.6
1.35
−
6.55
1.68
2.24
7.4
2.0
−
V
V
GE(TH)
CE
C
Collector to Emitter Saturation
Voltage
V
= 15 V, I = 75 A, T = 25°C
C J
CE(SAT)
= 15 V, I = 75 A, T = 175°C
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
= 30 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
6331
234
−
−
−
−
−
−
pF
nC
IES
CE
CE
GE
Output Capacitance
C
OES
C
RES
Reverse Transfer Capacitance
Total Gate Charge
29.6
214
Q
V
= 600 V, V = 15 V, I = 75 A
GE C
G
Gate to Emitter Charge
Gate to Collector Charge
Q
53.9
77.7
GE
GC
Q
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−On Delay Time
Turn-Off Delay Time
Rise Time
t
V
C
= 600 V, V = 15 V,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
42
221
27
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
ns
d(on)
d(off)
CE
GE
I
= 37.5 A, R = 4.7 ꢃ,
G
t
T = 25°C
J
t
r
Fall Time
t
f
77
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Turn-Off Delay Time
Rise Time
E
on
E
off
2.12
1.43
3.55
42
mJ
E
ts
t
t
V
C
= 600 Vꢄ V = 15 V,
ns
ns
ns
d(on)
d(off)
CE
GE
I
= 75 A, R = 4.7 ꢃ,
G
171
56
T = 25°C
J
t
r
Fall Time
t
f
66
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
on
E
off
5.00
2.32
7.32
mJ
E
ts
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2
FGY75T120SWD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn-On Delay Time
Turn−Off Delay Time
Rise Time
t
t
V
C
= 600 Vꢄ V = 15 V,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
38
276
26
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
ns
d(on)
CE
GE
I
= 37.5 A, R = 4.7 ꢃ,
G
d(off)
T = 175°C
J
t
r
Fall Time
t
f
132
3.50
2.31
5.81
38
Turn-On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
E
on
E
off
mJ
E
ts
t
t
V
C
= 600 Vꢄ V = 15 V,
ns
ns
ns
d(on)
d(off)
CE
GE
I
= 75 A, R = 4.7 ꢃ,
G
210
53
T = 175°C
J
t
r
Fall Time
t
f
115
7.29
3.50
10.79
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
DIODE CHARACTERISTIC
Diode Forward Voltage
E
on
E
off
mJ
E
ts
V
F
I = 75 A, T = 25°C
F
1.62
1.84
1.91
2.22
V
J
I = 75 A, T = 175°C
F
−
−
J
DIODE SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Reverse Recovery Time
t
V
= 600 V, I = 37.5 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
233
2343
0.8
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
nC
mJ
A
rr
R
F
F
dI /dt = 500 A/ꢀ s,
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
T = 25°C
J
E
rec
I
20.2
307
3285
1
RRM
t
rr
V
R
= 600 V, I = 75 A,
nS
nC
mJ
A
F
dI /dt = 500 A/ꢀ s,
F
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
T = 25°C
J
E
rec
I
21.4
407
5965
2
RRM
t
rr
V
R
= 600 V, I = 37.5 A,
ns
nC
mJ
A
F
dI /dt = 500 A/ꢀ s,
F
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Reverse Recovery Time
Q
rr
T = 175°C
J
E
rec
I
29.4
541
8974
4
RRM
t
rr
V
R
= 600 V, I = 75 A,
ns
nC
mJ
A
F
dI /dt = 500 A/ꢀ s,
F
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Q
rr
T = 175°C
J
E
rec
I
33.2
RRM
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGY75T120SWD
TYPICAL CHARACTERISTICS
300
250
200
150
300
V
= 8 V
V
= 8 V
GE
GE
T = 25°C
J
T = −55°C
J
V
= 10 V
= 12 V
= 15 V
= 20 V
V
= 10 V
= 12 V
= 15 V
= 20 V
GE
GE
GE
GE
GE
GE
GE
GE
250
200
150
V
V
V
V
V
V
100
50
0
100
50
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
CE
, Collector to Emitter Voltage (V)
V
CE
, Collector to Emitter Voltage (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
300
250
200
150
140
120
100
T = 175°C
Common Emitter
= 20 V
J
V
CE
V
= 8 V
T = 25°C
GE
J
V
V
V
V
= 10 V
= 12 V
= 15 V
= 20 V
GE
GE
GE
GE
T = 175°C
J
80
60
40
20
0
100
50
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
V
GE
, Gate to Emitter Voltage (V)
V
CE
, Collector to Emitter Voltage (V)
Figure 4. Transfer Characteristics
Figure 3. Output Characteristics
300
250
200
150
3.5
3.0
2.5
2.0
1.5
Common Emitter
V
GE
= 15 V
100
1.0
0.5
0.0
I
= 50 A
= 100 A
= 200 A
C
V
= 15 V
GE
I
I
C
C
T = 25°C
50
0
J
T = 175°C
J
0
1
2
3
4
5
6
7
−100
−50
0
50
100
150
200
V
CE
, Collector to Emitter Voltage (V)
T , Collector to Emitter Junction Temperature (5C)
J
Figure 6. Saturation Voltage vs Junction
Temperature
Figure 5. Saturation Voltage Characteristics
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4
FGY75T120SWD
TYPICAL CHARACTERISTICS (CONTINUED)
100K
10K
1K
14
Common Emitter
= 75 A
I
C
12
10
8
6
100
10
V
CC
V
CC
V
CC
= 200 A
= 400 A
= 600 A
4
Common Emitter
= 0 V, f = 1 MHz
T = 25°C
J
C
IES
V
C
GE
OES
2
C
RES
1
0.1
0
1
10
30
0
50
100
150
200
250
V
CE
, Collector to Emitter Voltage (V)
Q , Gate Charge (nC)
G
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
10
1000
100
10
Common Emitter
V
CE
= 600 V, V = 15 V
GE
I
C
= 75 A
*Note:
T
T
= 25°C
= 175°C
C
J
Single Pulse
Pulse Duration = 10 ꢀ s
Pulse Duration = 100 ꢀ s
Pulse Duration = 1 ms
Pulse Duration = 10 ms
Pulse Duration = DC
t
− T = 25°C
J
d(on)
1
t
− T = 175°C
d(on)
J
t
r
− T = 25°C
J
− T = 175°C
J
t
r
0.1
0
10
20
30
40
50
1
10
100
1000
R , Gate Resistance (W)
G
V
CE
, Collector to Emitter Voltage (V)
Figure 10. Turn−On Time vs Gate Resistance
Figure 9. SOA Characteristics
50.0
10.0
10000
1000
100
Common Emitter
t
− T = 25°C
J
d(off)
t
− T = 175°C
V
CE
V
GE
= 600 V,
= 15 V
d(off)
J
t − T = 25°C
f
J
t − T = 175°C
f
J
I
C
= 75 A
1.0
0.1
Common Emitter
E
E
on
E
− T = 25°C
J
on
V
V
I
= 600 V,
= 15 V
= 75 A
CE
− T = 175°C
J
− T = 25°C
GE
off
J
E
− T = 175°C
J
off
C
10
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
G
R , Gate Resistance (W)
G
Figure 12. Switching Loss vs Gate Resistance
Figure 11. Turn−Off Time vs Gate Resistance
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5
FGY75T120SWD
TYPICAL CHARACTERISTICS (CONTINUED)
1000
500
100
Common Emitter
= 600 V, V = 15 V
V
CE
GE
R
= 4.7 ꢃ
G
100
Common Emitter
t
− T = 25°C
J
t
− T = 25°C
J
d(on)
d(off)
V
V
= 600 V,
= 15 V
CE
t
− T = 175°C
t
− T = 175°C
d(on)
J
d(off)
J
t
r
− T = 25°C
J
− T = 175°C
J
GE
t − T = 25°C
f
J
t
r
t − T = 175°C
R
= 4.7 ꢃ
f
J
G
10
10
0
50
100
150
200
0
50
100
150
200
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 13. Turn−On Time vs Collector Current
Figure 14. Turn−Off Time vs Collector Current
300
50.0
10.0
V
GE
= 0 V
250
200
150
100
1.0
0.1
Common Emitter
E
E
on
E
− T = 25°C
J
on
T = 175°C
V
V
= 600 V,
= 15 V
J
CE
− T = 175°C
J
T = 25°C
J
GE
− T = 25°C
50
0
off
J
T = −55°C
J
E
− T = 175°C
J
R = 4.7 ꢃ
G
off
0
1
2
3
4
5
6
0
50
100
150
200
V , Forward Voltage (V)
F
I , Collector Current (A)
C
Figure 16. Diode Forward Characteristics
Figure 15. Switching Loss vs Collector Current
60
50
40
30
20
10
0
600
V
R
= 600 V, I = 75 A
F
500
400
300
200
100
0
V
= 600 V, I = 75 A
F
R
T = 25°C
T = 25°C
T = 175°C
J
J
J
T = 175°C
J
400
600
800
1000
1200
1400
1600
400
600
800
1000
1200
1400
1600
dI /dt, Diode Current Slope (A/ms)
F
dI /dt, Diode Current Slope (A/ms)
F
Figure 18. Diode Reverse Recovery Time
Figure 17. Diode Reverse Recovery Current
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6
FGY75T120SWD
TYPICAL CHARACTERISTICS (CONTINUED)
12000
8000
4000
0
V
= 600 V, I = 75 A
F
R
T = 25°C
J
T = 175°C
J
400
600
800
1000
1200
1400
1600
dI /dt, Diode Current Slope (A/ms)
F
Figure 19. Diode Stored Charge Characteristics
1
D = 0 is Single Pulse
0.1
0.01
P
Notes:
DM
Duty Factor: D = t1 / t2
t1
D = 0.00
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Peak T = P
J
× Z
+ T
JC C
t2
DM
ꢁ
0.001
R1
R2
i:
ri[K/W]: 0.0079
τ[s]:
1
2
3
4
0.0591
0.0490
0.0562
1.37E−05 1.59E−04 4.22E−04 1.95E−03
C1=t1/R1
C2=t2/R2
0.0001
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of IGBT
1
D = 0 is Single Pulse
0.1
Note:
P
DM
D = 0.00
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Peak T = P
J
× Z
+ T
JC C
ꢁ
DM
t1
0.01
t2
R1
R2
i:
ri[K/W]: 0.0135
τ[s]:
1
2
3
4
0.0352
0.0644
0.0807
2.08E−06 2.19E−05 1.61E−04 7.50E−04
C1=t1/R1
C2=t2/R2
0.001
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 21. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE A
DATE 18 SEP 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
= Pb−Free Package
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13857G
TO−247−3LD
PAGE 1 OF 1
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