FGY75T95SQDT [ONSEMI]
IGBT - 950 V 75 A Field stop trench IGBT;
| 型号： | FGY75T95SQDT |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 950 V 75 A Field stop trench IGBT 双极性晶体管 |
| 文件： | 总10页 (文件大小：593K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
75 A, 950 V
Product Preview
FGY75T95SQDT
th
Trench Field Stop 4 generation High Speed IGBT co−packaged
with full current rated diode.
www.onsemi.com
75 A, 950 V
Features
• Maximum Junction Temperature : T = 175℃
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
V
CESat
= 1.69 V (Typ.)
C
• Low Saturation Voltage: V
• Fast Switching
= 1.69 V (Typ.) @ I = 75 A
C
CE(Sat)
• Tighten Parameter Distribution
• These Devices are Pb−Free and are RoHS Compliant
G
Applications
• Solar Inverter
• PFC
E
• DC/DC Converter
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
950
V
V
Collector to Emitter Voltage
CES
G
TO−247−3LD
CASE 340CD
C
20
V
E
V
GES
Gate to Emitter Voltage
30
Transient Gate to Emitter Voltage
MARKING DIAGRAM
150
A
IC
Collector Current
@T = 25°C
C
75
@T = 100°C
C
$Y&Z&3&K
FGY75T95
SQDT
300
300
A
A
A
I
LM
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
I
CM
150
IF
Diode Forward Current
@T = 25°C
C
75
@T = 100°C
C
300
A
I
FM
Pulsed Diode Forward Current (Note 2)
434
217
W
PD
Maximum Power Dissipation @T = 25°C
C
@T = 100°C
C
°C
°C
−55 to +175
TJ, TSTG
Operating Junction
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
/ Storage Temperature Range
300
T
L
Maximum Lead Temp. for Soldering
= 2−Digit Lot Traceability Code
FGY75T95SQDT = Specific Device Code
Purposes, 1/8” from case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VCC = 700 V, VGE = 15 V, IC = 300 A, RG = 26 W, Inductive Load,
100% Tested
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
2. Pulse width limited by max Junction temperature. Defined by design.
Not subject to production test
This document contains information on a product under
development. ON Semiconductor reserves the right to
change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2020 − Rev. P1
FGY75T95SQDT/D
FGY75T95SQDT
ORDERING INFORMATION
Part Number
Top Marking
FGY75T95SQDT
Package
Shipping
FGY75T95SQDT
TO−247−3LD
(Pb-Free)
30 Units / Rail
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.35
0.23
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
V
= 0 V, I = 1 mA
BVCES
950
V
GE
C
DBVCES
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
0.96
V/°C
mA
GE
C
DT
J
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V = 950 V
ICES
IGES
250
400
CE
Gate leakage current, collector−emitter
V
GE
= 20 V , V = 0 V
nA
CE
short−circuited
ON CHARACTERISTICS
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 75 mA
VGE(th)
3.4
4.84
6.4
V
V
GE
CE
C
V
= 15 V, I = 75 A
VCE(sat)
1.69
2.25
2.11
GE
C
V
GE
= 15 V, I = 75 A, T = 175°C
C J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V, V = 0 V, f = 1 MHz
Cies
Coes
Cres
4770
241
pF
nC
CE
GE
Output capacitance
Reverse transfer capacitance
Gate charge total
19.7
137
V
CE
= 600 V, I = 75 V, V = 15 V
Q
g
C
GE
Gate to emitter charge
Gate to collector charge
Qge
Qgc
33.2
38.6
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
28.8
16.0
104.0
30.4
2.1
T = 25°C
ns
Turn−on delay time
td(on)
J
V
CC
= 600 V, I = 37.5 A
C
Rise time
t
r
Rg = 4.7 W
V
GE
= 15 V
Turn−off delay time
Fall time
td(off)
Inductive Load
t
f
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
Eon
Eoff
Ets
1.0
3.2
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2
FGY75T95SQDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Turn−on delay time
Test Conditions
Symbol
Min
Typ
Max
Unit
31.2
T = 25°C
J
ns
td(on)
V
= 600 V, I = 75 A
CC
C
58.4
96.0
65.6
5.4
Rise time
t
r
Rg = 4.7 W
V
GE
= 15 V
Turn−off delay time
Fall time
td(off)
Inductive Load
t
f
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Eon
Eoff
2.1
7.6
Ets
28.8
17.6
117.0
60.8
4.1
T = 175°C
td(on)
J
V
CC
= 600 V, I = 37.5 A
C
t
r
Rg = 4.7 W
V
GE
= 15 V
Turn−off delay time
Fall time
td(off)
Inductive Load
t
f
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Eon
Eoff
1.7
5.8
Ets
28.8
60.8
106.0
92.8
8.8
T = 175°C
td(on)
J
V
CC
= 600 V, I = 75 A
C
t
r
Rg = 4.7 W
V
GE
= 15 V
Turn−off delay time
Fall time
td(off)
Inductive Load
t
f
mJ
Turn−on switching loss
Turn−off switching loss
Eon
Eoff
Ets
3.2
12.0
Total switching loss
DIODE CHARACTERISTICS
Forward voltage
I = 75 A
V
F
2.03
1.76
2.51
V
F
I = 75 A, T = 175°C
F
J
314
T = 25°C
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
E
uJ
ns
nC
uJ
ns
nC
uJ
ns
nC
J
rec
V
= 600 V, I = 37.5 A
R
F
105
t
rr
dI /dt = 1000 A/ms
F
1635
2390
259
Q
rr
T = 25°C
E
rec
J
V
= 600 V, I = 75 A
R
F
t
rr
dI /dt = 1000 A/ms
F
7515
454
Q
rr
T = 175°C
E
rec
J
V
R
= 600 V, I = 37.5 A
F
148
t
rr
dI /dt = 1000 A/ms
F
2436
Q
rr
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3
FGY75T95SQDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Symbol
Min
Typ
Max
Unit
uJ
2790
T = 175°C
E
rec
J
V
= 600 V, I = 75 A
R
F
294
t
rr
ns
dI /dt = 1000 A/ms
F
9175
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FGY75T95SQDT
TYPICAL CHARACTERISTICS
Figure 1. Typical Output Characteristics (TJ = 255C)
Figure 2. Typical Output Characteristics (TJ = 1755C)
Figure 4. Typical Saturation Voltage Characteristics
Figure 6. Saturation Voltage vs. VGE (TJ = 255C)
Figure 3. Transfer Characteristics
Figure 5. Saturation Voltage vs Case Temperature at
Variant Current Level
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5
FGY75T95SQDT
TYPICAL CHARACTERISTICS
Figure 7. Saturation Voltage vs. VGE (TJ = 1755C)
Figure 8. Capacitance Characteristics
Figure 9. Gate Charge Characteristics (TJ = 255C)
Figure 10. Turn−on Characteristics vs. Gate
Resistance
Figure 11. Turn−off Characteristics vs. Gate
Resistance
Figure 12. Turn−on Characteristics vs. Collector
Current
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6
FGY75T95SQDT
TYPICAL CHARACTERISTICS
Figure 13. Turn−off Characteristics vs. Collector
Figure 14. Switching Loss vs. Gate Resistance
Current
Figure 16. SOA Characteristics (FBSOA)
Figure 15. Switching Loss vs. Collector Current
J
J
J
J
J
Figure 17. (Diode) Forward Characteristics vs
(Normal I−V)
Figure 18. (Diode) Reverse Recovery Current
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7
FGY75T95SQDT
TYPICAL CHARACTERISTICS
J
J
J
J
Figure 19. (Diode) Reverse Recovery Time
Figure 20. (Diode) Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
Figure 22. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE A
DATE 18 SEP 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
= Pb−Free Package
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13857G
TO−247−3LD
PAGE 1 OF 1
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