FGL40N120ANDTU [ONSEMI]
IGBT，1200V，NPT;
| 型号： | FGL40N120ANDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，NPT 局域网 PC 栅 双极性晶体管 功率控制 |
| 文件： | 总11页 (文件大小：703K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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February 2008
tm
FGL40N120AND
1200V NPT IGBT
Features
Description
•
•
•
•
High speed switching
Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
High input impedance
CO-PAK, IGBT with FRD : trr = 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
C
G
TO-264
E
G
C
E
Absolute Maximum Ratings
Symbol
Parameter
FGL40N120AND
Units
VCES
VGES
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
±25
64
V
V
Collector Current
@TC = 25°C
@TC = 100°C
A
IC
Collector Current
40
A
ICM(1)
IF
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time,
160
40
A
@TC = 100°C
A
IFM
240
500
200
A
@TC = 25°C
@TC = 100°C
W
W
PD
SCWT
10
µs
V
CE = 600V, VGE = 15V, TC = 125°C
TJ
Operating Junction Temperature
Storage Temperature Range
-55 to +150
-55 to +150
°C
°C
TSTG
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
TL
300
°C
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.25
0.7
Units
RθJC(IGBT)
RθJC(DIODE)
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
--
--
--
°C/W
°C/W
°C/W
25
©2008 Fairchild Semiconductor Corporation
FGL40N120AND Rev. A2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGL40N120AND
FGL40N120AND
TO-264
-
-
25
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1200
--
--
--
--
V
BVCES
∆TJ
/
Temperature Coefficient of Breakdown
Voltage
V
GE = 0V, IC = 1mA
0.6
V/°C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
1
mA
nA
±250
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
3.5
--
5.5
2.6
7.5
3.2
V
V
I
C = 40A, VGE = 15V
IC = 40A, VGE = 15V,
C = 125°C
IC = 64A, VGE = 15V
Collector to Emitter
Saturation Voltage
VCE(sat)
--
--
2.9
--
--
V
V
T
3.15
Dynamic Characteristics
Cies
Coes
cres
Input Capacitance
--
--
--
3200
370
--
--
--
pF
pF
pF
V
CE = 30V, VGE = 0V
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
125
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
20
--
--
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
110
40
--
ns
V
R
CC = 600V, IC = 40A,
G = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
80
3.45
1.65
5.1
--
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
2.3
1.1
3.4
20
mJ
mJ
mJ
ns
td(on)
tr
td(off)
tf
25
--
ns
Turn-Off Delay Time
Fall Time
120
45
--
ns
V
CC = 600V, IC = 40A,
G = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
R
--
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate charge
Gate-Emitter Charge
Gate-Collector Charge
2.5
1.8
4.3
220
25
--
mJ
mJ
mJ
nC
nC
nC
--
--
Qg
330
38
195
V
V
CE = 600V, IC = 40A,
GE = 15V
Qge
Qgc
130
2
www.fairchildsemi.com
FGL40N120AND Rev. A2
Electrical Characteristics of DIODE
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
3.2
2.7
75
Max.
4.0
--
Units
IF = 40A
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
--
--
--
--
--
--
--
--
VFM
Diode Forward Voltage
V
112
--
trr
Diode Reverse Recovery Time
nS
A
130
8
TC = 25°C
12
Diode Peak Reverse Recovery
Current
IF = 40A,
Irr
di/dt = 200A/µs
TC = 125°C
TC = 25°C
TC = 125°C
13
--
300
845
450
--
Qrr
Diode Reverse Recovery Charge
nC
3
www.fairchildsemi.com
FGL40N120AND Rev. A2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
300
150
TC = 25°C
Common Emitter
VGE = 15V
20V
17V
15V
250
TC
= 25°C
120
90
60
30
0
TC = 125°C
200
150
100
50
12V
VGE = 10V
0
0
2
4
6
8
10
0
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Figure 4. Load Current vs. Frequency
Temperature at Variant Current Level
5
4
3
2
1
80
Common Emitter
VGE = 15V
VCC = 600V
Load Current : peak of square wave
70
60
50
40
30
80A
40A
20
IC = 20A
Duty cycle : 50%
TC = 100°C
10
Power Dissipation = 100W
0
25
50
75
100
125
0.1
1
10
100
1000
Frequency [kHz]
Case Temperature, TC [°C]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
Common Emitter
TC = 125°C
TC = 25°C
16
16
12
12
8
8
80A
80A
4
4
40A
40A
IC = 20A
IC = 20A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
4
www.fairchildsemi.com
FGL40N120AND Rev. A2
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
6000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
5000
4000
3000
2000
1000
0
100
Ciss
tr
Common Emitter
td(on)
VCC = 600V, VGE = ±15V
Coss
Crss
IC = 40A
TC = 25°C
TC = 125°C
10
0
10
20
30
40
50
60
70
1
10
Gate Resistance, RG [Ω]
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 600V, VGE = ±15V, IC = 40A
Common Emitter
VCC = 600V, VGE = ±15V
1000
TC = 25°C
IC = 40A
td(off)
TC = 125°C
TC = 25°C
10
TC = 125°C
Eon
100
Eoff
tf
1
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Common Emitter
VGE = ±15V, RG = 5Ω
VGE = ±15V, RG = 5Ω
TC = 25°C
TC = 25°C
100
tr
TC = 125°C
TC = 125°C
td(off)
100
tf
td(on)
10
20
30
40
50
60
70
80
20
30
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
5
www.fairchildsemi.com
FGL40N120AND Rev. A2
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
16
Common Emitter
Common Emitter
VGE = ±15V, RG = 5Ω
RL = 15Ω
14
Vcc = 200V
TC = 25°C
TC = 25°C
10
Eon
Eoff
600V
TC = 125°C
12
10
400V
8
6
4
2
0
1
0.1
20
30
40
50
60
70
80
0
50
100
150
200
250
Collector Current, IC [A]
Gate Charge, Qg [nC]
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
Ic MAX (Pulsed)
50µs
100
10
Ic MAX (Continuous)
100µs
100
1ms
DC Operation
1
10
Single Nonrepetitive
0.1
0.01
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE = 15V, TC = 125oC
1
0.1
1
10
100
1000
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
10
100
di/dt = 200A/µs
8
TJ = 125oC
6
10
TJ = 25oC
4
di/dt = 100A/µs
1
2
0
TC = 125oC
TC = 25oC
0.1
0
10
20
30
40
50
60
70
0
1
2
3
4
5
6
Forward Voltage , VF [V]
Forward Current , IF [A]
6
www.fairchildsemi.com
FGL40N120AND Rev. A2
Typical Performance Characteristics (Continued)
Figure 19. Stored Charge
Figure 20. Reverse Recovery Time
400
100
90
di/dt = 200A/µs
300
di/dt = 200A/µs
80
200
70
60
50
di/dt = 100A/µs
di/dt = 100A/µs
100
0
10
20
30
40
50
60
70
0
0
10
20
30
40
50
60
70
Forward Current , IF [A]
Forward Current , IF [A]
Figure 21. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
Pdm
0.05
0.01
t1
0.02
0.01
t2
single pulse
1E-4
Duty factor D = t1 / t2
×
Peak Tj = Pdm
Zthjc + T
C
1E-3
1E-5
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
7
www.fairchildsemi.com
FGL40N120AND Rev. A2
Mechanical Dimensions
TO-264
20.00 ±0.20
(8.30) (8.30)
(2.00)
(1.00)
(0.50)
(7.00)
(7.00)
4.90 ±0.20
(1.50)
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
+0.25
–0.10
1.00
+0.25
–0.10
0.60
2.80 ±0.30
5.45TYP
5.45TYP
[5.45 ±0.30]
[5.45 ±0.30]
Dimensions in Millimeters
8
www.fairchildsemi.com
FGL40N120AND Rev. A2
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properly used in accordance with instructions for use provided
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or system whose failure to perform can be reasonably
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This datasheet contains the design specifications for product development.
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mation only.
Rev. I33
9
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FGL40N120AND Rev. A2
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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