FGL40N120ANTU [ONSEMI]
IGBT，1200V，NPT;
| 型号： | FGL40N120ANTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，NPT 局域网 电动机控制 瞄准线 双极性晶体管 |
| 文件： | 总9页 (文件大小：569K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
July 2007
®
IGBT
FGL40N120AN
1200V NPT IGBT
Features
Description
•
•
•
High speed switching
Employing NPT technology, Fairchild’s AN series of IGBTs pro-
vides low conduction and switching losses. The AN series offers
an solution for application such as induction heating (IH), motor
control, general purpose inverters and uninterruptible power
supplies (UPS).
Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
High input impedance
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
C
G
TO-264
E
G
C
E
Absolute Maximum Ratings
Symbol
Parameter
FGL40N120AN
Units
VCES
VGES
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
±25
64
V
V
Collector Current
@TC = 25°C
@TC = 100°C
A
IC
ICM(1)
PD
Collector Current
40
A
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
160
500
200
A
@TC = 25°C
@TC = 100°C
W
W
Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C
SCWT
10
µs
TJ
Operating Junction Temperature
Storage Temperature Range
-55 to +150
-55 to +150
°C
°C
TSTG
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
TL
300
°C
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.25
25
Units
RθJC(IGBT)
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
--
--
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGL40N120AN Rev. A1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGL40N120AN
FGL40N120AN
TO-264
-
-
25
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1200
--
--
--
--
V
BVCES
∆TJ
/
Temperature Coefficient of Breakdown
Voltage
V
GE = 0V, IC = 1mA
0.6
V/°C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
1
mA
nA
±250
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
3.5
--
5.5
2.6
7.5
3.2
V
V
I
C = 40A, VGE = 15V
IC = 40A, VGE = 15V,
C = 125°C
IC = 64A, VGE = 15V
Collector to Emitter
Saturation Voltage
VCE(sat)
--
--
2.9
--
--
V
V
T
3.15
Dynamic Characteristics
Cies
Coes
cres
Input Capacitance
--
--
--
3200
370
--
--
--
pF
pF
pF
V
CE = 30V, VGE = 0V
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
125
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
20
--
--
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
110
40
--
ns
V
R
CC = 600V, IC = 40A,
G = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
80
3.45
1.65
5.1
--
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
2.3
1.1
3.4
20
mJ
mJ
mJ
ns
td(on)
tr
td(off)
tf
25
--
ns
Turn-Off Delay Time
Fall Time
120
45
--
ns
V
CC = 600V, IC = 40A,
G = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
R
--
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate charge
Gate-Emitter Charge
Gate-Collector Charge
2.5
1.8
4.3
220
25
--
mJ
mJ
mJ
nC
nC
nC
--
--
Qg
330
38
195
V
V
CE = 600V, IC = 40A,
GE = 15V
Qge
Qgc
130
2
www.fairchildsemi.com
FGL40N120AN Rev. A1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
300
160
TC = 25°C
20V
Common Emitter
VGE = 15V
17V
15V
250
TC
TC = 125oC
=
25oC
120
80
40
0
200
150
100
50
12V
VGE = 10V
0
0
2
4
6
8
10
0
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Figure 4. Load Current vs. Frequency
Temperature at Variant Current Level
5
4
3
2
1
80
Common Emitter
VGE = 15V
VCC = 600V
Load Current : peak of square wave
70
60
50
40
30
80A
40A
20
IC = 20A
Duty cycle : 50%
TC = 100°C
10
Power Dissipation = 100W
0
25
50
75
100
125
0.1
1
10
100
1000
Frequency [kHz]
Case Temperature, TC [°C]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
Common Emitter
TC = 125°C
TC = 25°C
16
16
12
12
8
8
80A
80A
4
4
40A
40A
IC = 20A
IC = 20A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
3
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FGL40N120AN Rev. A1
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
6000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
5000
4000
3000
2000
1000
0
100
Ciss
tr
Common Emitter
td(on)
VCC = 600V, VGE = ±15V
Coss
Crss
IC = 40A
TC = 25°C
TC = 125°C
10
0
10
20
30
40
50
60
70
1
10
Gate Resistance, RG [Ω]
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 600V, VGE = ±15V, IC = 40A
Common Emitter
VCC = 600V, VGE = ±15V
1000
TC = 25°C
IC = 40A
td(off)
TC = 125°C
TC = 25°C
10
TC = 125°C
Eon
100
Eoff
tf
1
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Common Emitter
VGE = ±15V, RG = 5Ω
VGE = ±15V, RG = 5Ω
TC = 25°C
TC = 25°C
100
tr
TC = 125°C
TC = 125°C
td(off)
100
tf
td(on)
10
20
30
40
50
60
70
80
20
30
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
4
www.fairchildsemi.com
FGL40N120AN Rev. A1
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
16
Common Emitter
Common Emitter
VGE = ±15V, RG = 5Ω
RL = 15Ω
14
Vcc = 200V
TC = 25°C
TC = 25°C
10
Eon
Eoff
600V
TC = 125°C
12
10
400V
8
6
4
2
0
1
0.1
20
30
40
50
60
70
80
0
50
100
150
200
250
Collector Current, IC [A]
Gate Charge, Qg [nC]
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
Ic MAX (Pulsed)
50µs
100
10
Ic MAX (Continuous)
100µs
100
1ms
DC Operation
1
10
Single Nonrepetitive
Pulse Tc = 25oC
0.1
0.01
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE = 15V, TC = 125oC
1
0.1
1
10
100
1000
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
Pdm
0.05
0.01
t1
0.02
0.01
t2
single pulse
1E-4
Duty factor D = t1 / t2
×
Peak Tj = Pdm
Zthjc + T
C
1E-3
1E-5
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
5
www.fairchildsemi.com
FGL40N120AN Rev. A1
Mechanical Dimensions
TO-264
20.00 ±0.20
(8.30) (8.30)
(2.00)
(1.00)
(0.50)
(7.00)
(7.00)
4.90 ±0.20
(1.50)
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
+0.25
–0.10
1.00
+0.25
–0.10
0.60
2.80 ±0.30
5.45TYP
5.45TYP
[5.45 ±0.30]
[5.45 ±0.30]
Dimensions in Millimeters
www.fairchildsemi.com
6
FGL40N120AN Rev. A1
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discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I29
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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