FGH75N60UFTU [ONSEMI]
IGBT，600V，75A，场截止;
| 型号： | FGH75N60UFTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，75A，场截止 栅 双极性晶体管 |
| 文件： | 总9页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 75 A
FGH75N60UF
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching
losses are essential.
www.onsemi.com
V
I
C
CES
Features
600 V
75 A
• High Current Capability
C
E
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.9 V (Typ.) @ I = 75 A
C
CE(sat)
• This Device is Pb−Free and is RoHS Compliant
G
Applications
• Solar Inverters, UPS, Welder, PFC
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH75N60
UF
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH75N60UF
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
March, 2020 − Rev. 2
FGH75N60UF/D
FGH75N60UF
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
600
CES
GES
V
20
30
V
Transient Gate−to−Emitter Voltage
V
I
Collector Current
T
T
T
T
T
= 25°C
= 100°C
= 25°C
= 25°C
150
A
C
C
C
C
C
C
75
A
I
(Note 1)
Pulsed Collector Current
225
A
CM
P
Maximum Power Dissipation
452
W
W
°C
°C
°C
D
= 100°C
181
T
Operating Junction Temperature
Storage Temperature Range
−55 to +150
−55 to +150
300
J
T
STG
T
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
−
Max.
0.276
40
Unit
R
_C/W
_C/W
q
JC
R
−
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH75N60UFTU
FGH75N60UF
TO−247
Tube
N/A
N/A
30ea
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2
FGH75N60UF
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
V
= 0 V, I = 250 mA
600
−
−
−
V
V/°C
mA
CES
GE
C
DBV
= 0 V, I = 250 mA
−
0.75
CES
J
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
CE
V
GE
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
GES
CES
GE
I
, V = 0 V
nA
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 250 mA, V = V
GE
4.0
5.0
1.9
6.5
2.4
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 75 A, V = 15 V,
−
CE(sat)
GE
= 75 A, V = 15 V,
GE
−
2.15
−
V
T
= 125°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
3850
375
−
−
−
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
147
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 75 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
27
70
−
−
ns
ns
d(on)
R
= 3 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
128
30
−
ns
d(off)
T
f
80
−
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
3.05
1.35
4.4
mJ
mJ
mJ
on
off
E
−
E
−
ts
V
= 400 V, I = 75 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
27
74
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 3 W, V = 15 V,
GE
T
r
Inductive Load, T = 175°C
C
T
Turn−Off Delay Time
Fall Time
153
35
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
3.6
1.08
5.4
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 75 A,
Q
Total Gate Charge
−
−
−
250
30
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
130
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH75N60UF
TYPICAL PERFORMANCE CHARACTERISTICS
225
225
180
135
90
TC = 125oC
TC = 25oC
15V
12V
20V
15V
20V
180
12V
10V
10V
135
90
VGE = 8V
VGE = 8V
45
45
0
0
0
1
2
3
4
5
6
0.0
1.5
3.0
4.5
6.0
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
225
225
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
100
10
1
180
135
90
45
0
2
4
6
8
10
12
0
1
2
3
4
Collector−Emitter Voltage, V (V)
Gate−Emitter Voltage,V (V)
CE
GE
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Transfer Characteristics
3.6
20
16
12
8
Common Emitter
VGE= 15V
Common Emitter
TC = −40 o
C
3.0
2.4
1.8
1.2
150A
75A
4
150A
75A
IC = 40A
IC = 40A
0
0
4
8
12
16
20
25
50
75
100
125
Gate−Emitter Voltage, V (V)
GE
Case Temperature, T (5C)
C
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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4
FGH75N60UF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
20
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
150A
12
75A
150A
4
0
4
75A
IC = 40A
IC = 40A
0
0
4
8
16
20
0
4
8
12
16
GE
20
Gate−Emitter Voltage, V (V)
Gate−Emitter Voltage, V (V)
GE
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
8000
6000
4000
2000
0
15
12
9
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
200V
300V
VCC = 100V
6
Coes
3
Cres
0
1
10
Collector−Emitter Voltage, V (V)
0
50
100
150
200
250
30
CE
Gate Charge, Qg(nC)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
500
140
VCC = 400V
load Current : peak of square wave
ms
10
100
10
120
100
80
ms
100
1ms
10 ms
1
DC
60
Single Nonrepetitive
Pulse T =255C
C
0.1
0.01
Duty cycle : 50%
Curves must be detated
linearly with increase
in temperature
40
o
TC = 100 C
Powe Dissipation = 181W
20
1
10
100
1000
1
10
100
1000
Collector−Emitter Voltage, V (V)
CE
Frequency, f (kHz)
Figure 11. SOA Characteristics
Figure 12. Load Current vs. Frequency
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5
FGH75N60UF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
200
100
10000
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
W
td(off)
1000
tr
Common Emitter
100
td(on)
VCC = 400V, VGE = 15V
IC = 75A
tf
TC = 25oC
TC = 125oC
10
10
0
10
20
30
40
50
0
10
20
30
40
50
Collector Current, I (A)
Gate Resistance, R (W)
C
G
Figure 13. Turn−on Characteristics vs.
Figure 14. Turn−off Characteristics vs.
Gate Resistance
Gate Resistance
1000
1000
100
10
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
W
td(off)
tr
100
10
1
tf
td(on)
Common Emitter
W
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
1
0
30
60
90
120
150
0
30
60
90
120
150
Collector Current, I (A)
Collector Current, I (A)
C
C
Figure 15. Turn−on Characteristics vs.
Figure 16. Turn−off Characteristics vs.
Collector Current
Collector Current
10
100
10
1
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
Common Emitter
VCC = 400V, VGE = 15V
W
IC = 75A
8
6
4
2
0
TC = 25oC
TC = 125oC
Eon
Eon
Eoff
Eoff
0.1
0
10
20
30
40
50
0
30
60
90
120
150
Collector Current, I (A)
Gate Resistance, R (W)
C
G
Figure 17. Switching Loss vs. Gate Resistance
Figure 18. Switching Loss vs. Collector Current
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6
FGH75N60UF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
500
100
10
1
Safe Operating Area
VGE = 15V, TC = 125oC
1
10
100
1000
Collector−Emitter Voltage, V (V)
CE
Figure 19. Turn off Switching SOA
Characteristics
1
0.5
0.1
0.2
0.1
0.05
0.02
PDM
0.01
0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E−3
1E−5
1E−4
1E−3
0.01
0.1
1
10
Rectangular Pulse Duration (sec)
Figure 20. Transient Thermal Impedance of IGBT
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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