FGH60N60UFDTU [ONSEMI]
IGBT，650V，20A，1.8V，TO-247，低 VCE(ON)，场截止;
| 型号： | FGH60N60UFDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，20A，1.8V，TO-247，低 VCE(ON)，场截止 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：1128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGH60N60UFDTU-F085
600V, 60A Field Stop IGBT
Features
General Description
•
•
•
•
•
•
High Current Capability
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of Field Stop IGBTs offer the optimum performance
for Automo-tive Chargers, Inverter, and other applications
where low con-duction and switching losses are essential.
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 60 A
High Input Impedance
Fast Switching
RoHS Compliant
Qualified to Automotive Requirements of AEC-Q101
Applications
•
Automotive chargers, Converters, High Voltage Auxiliaries
•
Inverters, PFC, UPS
E C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
600
Unit
VCES
Collector to Emitter Voltage
Gate to Emitter Voltage
V
±20
VGES
V
Transient Gate-to-Emitter Voltage
Collector Current
±30
@ TC = 25oC
@ TC = 100oC
120
A
A
IC
Collector Current
60
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
ICM (1)
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
180
A
298
W
W
oC
oC
PD
119
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
oC
TL
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Typ.
0.33
1.1
Unit
oC/W
oC/W
oC/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
40
Publication Order Number:
FGH60N60UFDTU-F085/D
©2015 Semiconductor Components Industries, LLC.
August-2017,Rev.2
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method Reel Size Tape Width Quantity
FGH60N60UFDTU-F085 FGH60N60UFD
TO-247
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA
600
-
-
-
-
V
ΔBVCES
/ ΔTJ
Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 μA
Voltage
0.67
V/oC
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
μA
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 μA, VCE = VGE
4.0
-
5.0
1.8
6.5
2.9
V
V
I
C = 60 A, VGE = 15 V
VCE(sat)
Collector to Emitter Saturation Voltage
I
C = 60 A, VGE = 15 V,
-
2.1
-
V
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
2540
330
110
-
-
-
pF
pF
pF
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
29
60
-
-
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
138
28
-
ns
V
CC = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
80
-
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
2.47
0.81
3.28
28
mJ
mJ
mJ
ns
-
-
-
55
-
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
147
71
-
ns
V
CC = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
-
ns
Inductive Load, TC = 125oC
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
3.01
1.21
4.22
192
24
-
mJ
mJ
mJ
nC
nC
nC
-
-
-
V
CE = 400 V, IC = 60 A,
Qge
Qgc
-
VGE = 15 V
102
-
www.onsemi.com
2
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.70
1.54
76
Max Units
TC = 25oC
-
-
-
-
-
-
2.6
VFM
Diode Forward Voltage
IF = 30 A
V
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
-
-
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
242
-
IF = 30 A, diF/dt = 200 A/μs
208
-
Qrr
nC
1162
-
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
180
TC = 25oC
20V
TC = 125oC
20V
15V
15V
12V
150
150
12V
120
120
90
60
30
0
10V
10V
90
60
VGE = 8V
30
VGE = 8V
0
0
2
4
6
8
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
180
180
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
TC = 25oC
150
150
TC = 125oC
120
120
90
60
30
0
90
60
30
0
2
4
6
8
10
12
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4
3
2
1
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
16
12
8
120A
120A
60A
60A
IC = 30A
IC = 30A
4
0
25
50
75
100
125
3
6
9
12
15
18
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
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4
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
16
12
8
120A
120A
60A
60A
IC = 30A
IC = 30A
4
4
0
0
3
6
9
12
15
18
3
6
9
12
15
18
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
6000
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
VCC = 100V
12
200V
Cies
4000
300V
9
6
3
0
Coes
2000
Cres
0
0.1
0
50
100
150
200
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Turn off Switching SOA
Characteristics
500
300
10μs
100
100
10
100μs
10
1
1ms
DC
10 ms
*Notes: Single Nonrepetitive
Pulse TC= 25OC
0.1
0.01
Safe Operating Area
VGE = 15V, TC = 125oC
1
Curves must be derated linearly
with increase in temperature
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
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5
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
Figure 14. Turn-off Characteristics vs.
Gate Resistance
300
6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
1000
TC = 125oC
100
tr
td(off)
100
Common Emitter
VCC = 400V, VGE = 15V
td(on)
IC = 60A
tf
TC = 25oC
TC = 125oC
10
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
Figure 15. Turn-on Characteristics vs.
Figure 16. Turn-off Characteristics vs.
Collector Current
Collector Current
600
500
Common Emitter
Common Emitter
VGE = 15V, RG = 5Ω
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 25oC
TC = 125oC
TC = 125oC
td(off)
tr
100
100
td(on)
tf
10
10
0
20
40
60
80
100
120
0
20
40
60
80
100
120
Collector Current, IC [A]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
Figure 18. Switching Loss vs. Collector Current
10
20
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
10
Eon
Eon
TC = 125oC
1
Eoff
Eoff
1
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
0.1
0.1
0
10
20
30
40
50
0
20
40
60
80
100
120
Gate Resistance, RG [Ω]
Collector Current, IC [A]
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6
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
200
500
TJ = 125oC
100
100
TJ = 125oC
10
TJ = 75oC
TJ = 75oC
10
1
TJ = 25oC
TJ = 25oC
TC = 25oC
0.1
TC = 125oC
TC = 75oC
1
0.01
0
1
2
3
4
0
200
400
600
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
90
250
200A/μs
200
150
100
50
80
di/dt = 100A/μs
200A/μs
70
di/dt = 100A/μs
TC = 25oC
TC = 25oC
60
5
20
40
60
5
20
40
60
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
PDM
0.01
1E-3
0.01
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
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7
Mechanical Dimensions
Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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