FGH60N60SFTU [ONSEMI]
IGBT，600V，60A，2.2V，TO-247，高速场截止;
| 型号： | FGH60N60SFTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，60A，2.2V，TO-247，高速场截止 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 60 A
FGH60N60SF
Description
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching
losses are essential.
www.onsemi.com
V
I
C
CES
Features
600 V
60 A
• High Current Capability
C
E
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 2.3 V (Typ.) @ I = 60 A
C
CE(sat)
• This Device is Pb−Free and is RoHS Compliant
G
Applications
• Solar Inverter, UPS, Welder, PFC
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH60N60
SF
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH60N60SF
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
February, 2020 − Rev. 2
FGH60N60SF/D
FGH60N60SF
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
600
CES
GES
V
20
30
V
Transient Gate−to−Emitter Voltage
V
I
Collector Current
T
T
T
T
T
= 25°C
= 100°C
= 25°C
= 25°C
120
A
C
C
C
C
C
C
60
A
I
(Note 1)
Pulsed Collector Current
180
A
CM
P
Maximum Power Dissipation
378
W
W
°C
°C
°C
D
= 100°C
151
T
Operating Junction Temperature
Storage Temperature Range
−55 to +150
−55 to +150
300
J
T
STG
T
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive test: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
Max.
0.33
40
Unit
R
−
−
_C/W
_C/W
q
JC
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH60N60SFTU
FGH60N60SF
TO−247
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
V
= 0 V, I = 250 mA
600
−
−
−
V
V/°C
mA
CES
GE
C
DBV
= 0 V, I = 250 mA
−
0.4
CES
J
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
CE
V
GE
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
GES
CES
GE
I
, V = 0 V
nA
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 250 mA, V = V
GE
4.0
5.0
2.3
6.5
2.9
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 60 A, V = 15 V,
−
CE(sat)
GE
= 60 A, V = 15 V,
GE
−
2.5
−
V
T
= 125°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
2820
350
−
−
−
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
140
res
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2
FGH60N60SF
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
SWITCHING CHARACTERISTICS
V
= 400 V, I = 60 A,
C
T
Turn−On Delay Time
CC
G
−
−
−
−
−
−
−
22
42
−
−
ns
ns
d(on)
R
= 5 W, V = 15 V,
GE
T
r
Rise Time
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
134
31
−
ns
d(off)
T
f
62
−
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.79
0.67
2.46
mJ
mJ
mJ
on
off
E
−
E
−
ts
V
= 400 V, I = 60 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
22
44
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 5 W, V = 15 V,
GE
T
r
Inductive Load, T = 125°C
C
T
Turn−Off Delay Time
Fall Time
144
43
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.88
1.0
2.88
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 60 A,
Q
Total Gate Charge
−
−
−
198
22
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
106
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH60N60SF
TYPICAL PERFORMANCE CHARACTERISTICS
180
180
150
120
90
TC = 125oC
TC = 25oC
20V
20V
15V
12V
15V
150
120
90
60
30
0
12V
10V
10V
60
VGE = 8V
VGE = 8V
30
0
0
2
4
6
8
0
2
4
6
8
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
150
120
90
180
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
150
120
90
60
30
0
60
30
0
0
1
2
3
4
5
0
1
2
3
4
5
Gate−Emitter Voltage,V (V)
Collector−Emitter Voltage, V (V)
GE
CE
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
16
12
8
Common Emitter
VGE = 15V
Common Emitter
o
TC = −40 C
120A
60A
120A
IC = 30A
4
60A
IC = 30A
0
25
50
75
100
125
0
4
8
12
16
20
Collector−Emitter Case Temperature, T (5C)
C
Gate−Emitter Voltage, V (V)
GE
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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4
FGH60N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
20
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
120A
60A
IC = 30A
120A
4
4
60A
IC = 30A
0
0
0
4
8
12
16
20
0
4
8
12
16
GE
20
Gate−Emitter Voltage, V (V)
GE
Gate−Emitter Voltage, V (V)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
6000
15
12
9
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
5000
4000
3000
2000
1000
300V
Cies
VCC = 100V
200V
Coes
6
3
Cres
0
1
10
Collector−Emitter Voltage, V (V)
0
50
100
150
200
30
CE
Gate Charge, Qg(nC)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
500
300
ms
10
100
10
100
10
1
100
ms
1ms
10 ms
DC
1
Single Nonrepetitive
Pulse T = 255C
Curves must be derated
linearly with increase
in temperature
C
0.1
0.01
Safe Operating Area
VGE = 15V,TC = 125oC
1
10
100
1000
1
10
100
1000
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 11. SOA Characteristics
Figure 12. Turn−off Switching SOA
Characteristics
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5
FGH60N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
300
100
6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
1000
TC = 125oC
tr
td(off)
100
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
tf
td(on)
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance,R (W)
Gate Resistance, R (W)
G
G
Figure 14. Turn−off Characteristics
Figure 13. Turn−on Characteristics
vs. Gate Resistance
vs. Gate Resistance
1000
100
10
500
100
Common Emitter
VGE = 15V, RG = 5W
TC = 25oC
TC = 125oC
Common Emitter
W
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
tr
td(off)
td(on)
tf
10
0
20
40
60
80
100
120
0
20
40
60
80
100
120
Collector Current, I (A)
Collector Current, I (A)
C
C
Figure 15. Turn−on Characteristics vs.
Figure 16. Turn−off Characteristics
Collector Current
vs. Collector Current
10
30
10
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VGE = 15V, RG = 5W
TC = 25oC
TC = 125oC
IC = 60A
Eon
TC = 25oC
TC = 125oC
Eon
Eoff
1
Eoff
1
0.5
0.1
0
10
20
30
40
50
0
20
40
60
80
100
120
Gate Resistance, R (W)
G
Collector Current, I (A)
C
Figure 17. Switching Loss vs. Gate Resistance
Figure 18. Switching Loss vs. Collector Current
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6
FGH60N60SF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
C
1E−3
1E−5
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration (sec)
Figure 19. Transient Thermal Impedance of IGBT
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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