FGH4L50T65SQD [ONSEMI]
IGBT - 650 V 50 A FS4 high speed IGBT with copack diode;
| 型号： | FGH4L50T65SQD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 50 A FS4 high speed IGBT with copack diode 双极性晶体管 |
| 文件： | 总11页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
IGBT – Field Stop, Trench
650 V, 50 A
FGH4L50T65SQD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
th
series of field stop 4 generation IGBTs offer the optimum
www.onsemi.com
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
V
I
C
CES
Features
650 V
50 A
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
• Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 50 A
CE(Sat)
C
E1: Kelvin Emitter
E2: Power Emitter
• 100% of the Parts are Tested for I
• High Input Impedance
• Fast Switching
LM
G
• Tight Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
E1
E2
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
E2
E1
G
TO−247−4LD
CASE 340CJ
MARKING DIAGRAM
$Y&Z&3&K
FGH4L
50T65SQD
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH4L50T65SQD = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
FGH4L50T65SQD TO−247−4LD 30 Units / Rail
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
July, 2021 − Rev. 0
FGH4L50T65SQD/D
FGH4L50T65SQD
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
Value
650
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
V
+20
V
Transient Gate to Emitter Voltage
+30
V
I
C
Collector Current (Note 1)
A
T
C
T
C
= 25°C
80
50
= 100°C
I
Pulsed Collector Current (Note 2), T = 25°C
200
200
A
A
A
LM
C
I
Pulsed Collector Current (Note 3)
CM
I
F
Diode Forward Current (Note 1)
T
C
T
C
= 25°C
= 100°C
40
30
IFM
Pulsed Diode Maximum Forward Current
200
A
P
D
Maximum Power Dissipation
W
T
C
T
C
= 25°C
268
134
= 100°C
T
Operating Junction Temperature
−55 to +175
−55 to +175
265
°C
°C
°C
J
TSTG
Storage Temperature Range
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Value limited by bond wire.
2. V = 400 V, V = 15 V, I = 200 A, R = 15 W, Inductive Load.
CC
GE
C
G
3. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Characteristics
Value
0.56
1.25
40
Unit
°C/W
°C/W
°C/W
R
R
(IGBT) Thermal Resistance, Junction to Case, Max.
(Diode) Thermal Resistance, Junction to Case, Max.
q
JC
q
JC
R
Thermal Resistance, Junction to Ambient, Max.
q
JA
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
CES
GE
C
DBV
/ DT
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
−
0.6
V/°C
CES
J
GE
C
I
I
Collector Cut−Off Current
G−E Leakage Current
V
= V
, V = 0 V
−
−
−
−
250
400
mA
CES
CE
CES
GE
V
GE
= V
, V = 0 V
nA
GES
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
Collector to Emitter Saturation Voltage
I
= 50 mA, V = V
GE
2.6
−
4.5
1.6
6.4
2.1
−
V
V
V
GE(th)
C
CE
V
I = 50 A, V = 15 V
C GE
CE(sat)
I
C
= 50 A, V = 15 V, T = 175°C
−
1.92
GE
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
CE
= 30 V, V = 0 V, f = 1MHz
−
−
−
3070
84
−
−
−
pF
pF
pF
ies
GE
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
10
res
www.onsemi.com
2
FGH4L50T65SQD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
T
T
Turn−On Delay Time
Rise Time
V
= 400 V, I = 25 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
22.40
11.20
162
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 15 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
J
Turn−Off Delay Time
Fall Time
ns
d(off)
T
f
8
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
0.28
0.20
0.48
24
mJ
mJ
mJ
ns
on
off
E
E
ts
T
d(on)
V
= 400 V, I = 50 A,
= 15 W, V = 15 V,
GE
CC C
R
G
T
r
20.80
158.40
11.20
0.66
0.44
1.10
19.20
16
ns
Inductive Load, T = 25°C
J
T
d(off)
Turn−Off Delay Time
Fall Time
ns
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
mJ
mJ
mJ
ns
on
off
E
E
ts
T
d(on)
V
= 400 V, I = 25 A,
= 15 W, V = 15 V,
GE
CC C
R
G
T
r
ns
Inductive Load, T = 175°C
J
T
d(off)
Turn−Off Delay Time
Fall Time
178
ns
T
f
6.40
0.59
0.32
0.91
22.40
26.40
168
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
mJ
mJ
mJ
ns
on
off
E
E
ts
T
d(on)
V
= 400 V, I = 50 A,
= 15 W, V = 15 V,
GE
CC C
R
G
T
r
ns
Inductive Load, T = 175°C
J
T
d(off)
Turn−Off Delay Time
Fall Time
ns
T
f
11.20
1.16
0.68
1.84
92
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
mJ
mJ
mJ
nC
nC
nC
on
off
E
E
ts
Q
V
= 400 V, I = 50 A,
g
CE C
V
GE
= 15 V
Q
Q
17
ge
gc
21
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH4L50T65SQD
DIODE CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
I = 30 A
T = 25°C
Min
−
Typ
2.1
1.8
Max
2.6
−
Unit
V
FM
Diode Forward Voltage
V
F
J
T = 175°C
J
−
DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
E
Reverse Recovery Energy
T = 25°C, V = 400 V, I = 15 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
11
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
nC
A
rec
J
CE
F
di /dt = 1000 A/ms
F
T
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
rr
Q
175
14
rr
I
rr
E
rec
T = 25°C, V = 400 V, I = 30 A,
11
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
T
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
29
rr
Q
205
14
rr
I
rr
E
rec
T = 175°C, V = 400 V, I = 15 A,
98
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
T
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
Reverse Recovery Energy
70
rr
Q
830
23
rr
I
rr
E
rec
T = 175°C, V = 400 V, I = 30 A,
112
89
mJ
ns
nC
A
J
CE
F
di /dt = 1000 A/ms
F
T
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Current
rr
Q
1031
23
rr
I
rr
www.onsemi.com
4
FGH4L50T65SQD
TYPICAL CHARACTERISTICS
200
175
150
125
100
75
200
20 V
10 V
T = 25°C
20 V
T = 175°C
J
J
175
150
125
100
75
10 V
V
GE
= 8 V
15 V
12 V
15 V
12 V
V
GE
= 8 V
50
50
25
0
25
0
0
1
2
3
4
5
0
0
1
1
2
3
4
5
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
175
150
125
100
75
200
175
150
125
100
75
T = 175°C
J
T = 25°C
J
Common Emitter
= 15 V
V
GE
50
50
T = 175°C
J
Common Emitter
25
0
25
0
V
= 15 V
GE
T = 25°C
J
2
4
6
8
10
0
1
2
3
4
5
I , COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Typical Transfer Characteristics
3.0
2.5
2.0
10000
1000
100
C
ies
Common Emitter
V
= 15 V
GE
I
= 100 A
C
C
oes
I
I
= 50 A
= 25 A
C
C
res
Common Emitter
= 0 V
f = 1 MHz
T = 25°C
C
10
1
1.5
1.0
V
GE
J
−100
−50
0
50
100
150
200
10
, COLLECTOR−EMITTER VOLTAGE (V)
30
T , COLLECTOR−EMITTER JUNCTION TEMPERATURE (°C)
V
CE
J
Figure 5. Saturation Voltage vs. Junction
Temperature
Figure 6. Capacitance Characteristics
www.onsemi.com
5
FGH4L50T65SQD
TYPICAL CHARACTERISTICS
15
12
9
300
V
CC
= 200 V
Common Emitter
T = 25°C
J
100
V
CC
= 400 V
10 ms
100 ms
V
CC
= 300 V
10
1 ms
6
10 ms
*Notes:
1. T = 25°C
1
J
3
0
DC
2. T = 175°C
J
3. Single Pulse
0.1
0
0
0
20
40
60
80
100
1
0
0
10
, COLLECTOR−EMITTER VOLTAGE (V)
CE
100
1000
Q , GATE CHARGE (nC)
V
G
Figure 7. Gate Charge Characteristic
Figure 8. SOA Characteristics (FBSOA)
100
1000
100
Common Emitter
t
d(off)
V
V
= 400 V
= 15 V
= 50 A
CC
GE
t
d(on)
I
C
t
r
t
f
10
1
Common Emitter
V
V
I
= 400 V
= 15 V
CC
T = 25°C
T = 25°C
J
J
GE
T = 175°C
J
T = 175°C
J
= 50 A
C
10
10
20
30
40
50
10
20
30
40
50
R , GATE RESISTANCE (W)
R , GATE RESISTANCE (W)
G
G
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
1000
100
1000
100
Common Emitter
V
V
= 400 V
= 15 V
= 15 W
CC
t
GE
d(off)
R
G
t
r
t
t
f
d(on)
10
1
10
1
Common Emitter
V
V
= 400 V
= 15 V
= 15 W
CC
T = 25°C
T = 25°C
J
J
GE
T = 175°C
J
T = 175°C
J
R
G
30
60
90
120
150
30
60
90
120
150
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Turn−On Characteristics vs.
Figure 12. Turn−Off Characteristics vs.
Collector Current
Collector Current
www.onsemi.com
6
FGH4L50T65SQD
TYPICAL CHARACTERISTICS
10
10
Common Emitter
Common Emitter
E
on
V
V
= 400 V
= 15 V
V
V
= 400 V
= 15 V
CC
CC
E
on
GE
GE
I
C
= 50 A
R
= 15 W
G
1
1
E
off
0.1
E
off
T = 25°C
T = 175°C
J
T = 25°C
J
T = 175°C
J
J
0.1
0.01
0
10
20
30
40
50
0
30
60
90
120
150
R , GATE RESISTANCE (W)
G
I , COLLECTOR CURRENT (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
200
175
150
125
100
75
3.0
2.5
2.0
Common Emitter
I
= 60 A
C
I
I
= 30 A
= 15 A
C
C
50
1.5
1.0
T = 175°C
J
25
0
T = 25°C
J
0
1
2
3
4
5
−100
−50
0
50
100
150
200
V , FORWARD VOLTAGE (V)
F
T , COLLECTOR−EMITTER JUNCTION TEMPERATURE (°C)
J
Figure 15. (Diode) Forward Characteristics
Figure 16. (Diode) Forward Voltage vs.
Junction Temperature
30
25
20
15
10
250
V = 400 V
I = 30 A
F
V = 400 V
I = 30 A
F
F
F
225
200
175
150
125
T = 175°C
J
T = 25°C
J
T = 175°C
J
100
75
T = 25°C
50
J
5
0
25
0
0
200
400
600
800
1000
1200
0
200
400
600
800
1000 1200
di /dt, DIODE CURRENT SLOPE (A/ms)
F
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 17. Reverse Recovery Current (Irr)
Figure 18. Reverse Recovery Time (Trr)
www.onsemi.com
7
FGH4L50T65SQD
TYPICAL CHARACTERISTICS
1200
1000
800
T = 175°C
J
V = 400 V
I = 30 A
F
F
600
400
T = 25°C
J
200
0
0
200
400
600
800
1000
1200
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 19. Stored Charge (Qrr)
1
0.5 Duty Cycle
0.2
Duty Factor, D = t /t
1
2
P
i:
DM
Peak T = P
x Z
+ T
q
J
DM
JC C
R
R
2
1
t
1
0.1
0.1
t
2
0.05
0.02
C = t / R
C = t / R
2 2 2
1
1
1
1
2
3
4
0.01
ri [K/W]: 0.06319
0.07228
0.1066
0.02774
T [s]: 8.862E−5 4.152E−4 2.249E−3 3.158E−2
Single Pulse
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
RECTANGULAR PULSE DURATION (sec)
Figure 20. Transient Thermal Impedance of IGBT
1
0.5 Duty Cycle
0.2
Duty Factor, D = t /t
1
2
P
DM
0.1
Peak T = P
x Z
+ T
q
J
DM
JC C
0.05
0.02
R
R
2
1
t
1
0.1
t
2
0.01
C = t / R
1
C = t / R
2 2 2
1
1
Single Pulse
i:
ri [K/W]: 0.04585
T [s]:
1
2
3
4
0.2005
0.1910
0.1832
2.402E−5 4.063E−4 1.875E−3 1.030E−2
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
RECTANGULAR PULSE DURATION (sec)
Figure 21. Transient Thermal Impedance of Diode
www.onsemi.com
8
FGH4L50T65SQD
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
www.onsemi.com
9
FGH4L50T65SQD
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
FGH50N6S2D_NL
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
FAIRCHILD
FGH50N6S2_NL
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明