FGH40T65SPD-F085 [ONSEMI]
IGBT，650 V，40A，场截止沟槽;
| 型号： | FGH40T65SPD-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650 V，40A，场截止沟槽 局域网 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：3128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 40 A
FGH40T65SPD-F085
Description
rd
Using the novel field stop 3 generation IGBT technology,
FGH40T65SPD−F085 offers the optimum performance with both low
conduction loss and switching loss for a high efficiency operation
in various applications, which provides 50 V higher blocking voltage
and rugged high current switching reliability.
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V
CES
E
on
V
CE(Sat)
Meanwhile, this part also offers and advantage of outstanding
performance in parallel operation.
650 V
1.16 mJ
1.85 V
Features
C
• Low Saturation Voltage: V
= 1.85 V (Typ.) @ I = 40 A
C
CE(Sat)
• 100% Of The Part Are Dynamically Tested (Note 1)
• Short Circuit Ruggedness > 5 mS @ 25°C
G
• Maximum Junction Temperature: T = 175°C
J
• Fast Switching
E
• Tight Parameter Distribution
• Positive Temperature Co−efficient for Easy Parallel Operating
• Co−Packed With Soft And Fast Recovery Diode
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
E
C
G
COLLECTOR
(FLANGE)
Applications
• On−board Charger
TO−247−3LD
CASE 340CK
• Air Conditioner Compressor
• PTC Heater
MARKING DIAGRAM
• Motor Drivers
• Other Automotive Power−Train Applications
$Y&Z&3&K
FGH40T65
SPD
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Data code
= 2−Digit Lot Traceability code
= Specific Device Code
FGH40T65SPD
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
FGH40T65SPD−F085/D
February, 2021 − Rev. 3
FGH40T65SPD−F085
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Units
V
Collector to Emitter Voltage
Gate to Emitter Voltage
650
V
V
V
A
CES
GES
V
20
Transient Gate to Emitter Voltage
30
I
C
Collector Current @ T = 25°C
80
C
Collector Current @ T = 100°C
40
C
I
I
Pulsed Collector Current (Note 2)
120
A
A
CM
I
F
Diode Forward Current @ T = 25°C
40
C
Diode Forward Current @ T = 100°C
20
120
C
Pulsed Diode Maximum Forward Current (Note 2)
A
FM
P
D
Maximum Power Dissipation @ T = 25°C
267
W
C
Maximum Power Dissipation @ T = 100°C
134
C
SCWT
Short Circuit Withstand Time @ T = 25°C
5
ms
°C
°C
°C
C
T
J
Operating Junction Temperature
−55 to +175
−55 to +175
300
T
stg
Storage Temperature Range
T
L
Maximum Lead Temp. For soldering Purposes, ⅛” from case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 120 A, R = 20 W, Inductive Load.
CC
GE
C
G
2. Repetitive rating: pulse width limited by max. Junction temperature.
THERMAL CHARACTERISTICS
Symbol
Rating
Thermal Resistance Junction to Case, for IGBT
Thermal Resistance Junction to Case, for Diode
Thermal Resistance Junction to Ambient
Max.
0.56
1.71
40
Units
_C/W
_C/W
_C/W
R
q
JC
R
q
JC
R
q
JA
PACKING MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Pacing Type
Quantity
FGH40T65SPD
FGH40T65SPD−F085
TO−247−3LD
Tube
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
OFF CHARACTERISTICS
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1mA
BV
650
−
−
−
V
GE
C
CES
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1mA
DBV
/
−
0.6
V/_C
GE
C
CES
DT
J
CES
GES
Collector Cut−off Current
G−E Leakage Current
V
V
= 0 V, V = V
CES
I
−
−
250
400
mA
GE
CE
= V
, V = 0 V
CE
I
−
nA
GE
GES
ON CHARACTERISTICS
G−E Threshold Voltage
V
= V , I = 40 mA
V
GE(th)
4.0
5.5
7.5
V
V
GE
CE
C
Collector to Emitter Saturation Voltage
V
GE
V
GE
= 15 V, I = 40 A
V
CE(sat)
−
−
1.85
2.51
2.4
−
C
= 15 V, I = 40 A, T = 175_C
C
J
DYNAMIC CHARACTERISTICS
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2
FGH40T65SPD−F085
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)(continued)
C
Parameter
DYNAMIC CHARACTERISTICS
Input Capacitance
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
V
= 30 V, V = 0 V,
C
−
−
−
1518
91
−
−
−
pF
CE
GE
ies
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn−on Delay Time
Rise Time
C
oes
C
15
res
T
= 25_C
T
T
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
42
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
CC
d(on)
V
= 400 V, I = 40 A
C
T
r
Rg = 6 W
= 15 V
Inductive Load
V
GE
Turn−off Delay Time
Fall Time
35
d(off)
T
f
10
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
1.16
0.27
1.43
16
mJ
ns
on
off
E
E
ts
T
= 175_C
T
T
C
CC
d(on)
V
= 400 V, I = 40 A
C
T
r
40
Rg = 6 W
= 15 V
Inductive Load
V
GE
Turn−off Delay Time
Fall Time
37
d(off)
T
f
11
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Gate Charge Total
E
1.59
0.42
2.01
36
mJ
nC
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 40 V,
Q
g
C
= 15 V
Gate to Emitter Charge
Gate to Collector Charge
Q
ge
Q
gc
11
12
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Parameter
Diode Forward Voltage
Test Conditions
Symbol
Min.
−
Typ.
2.2
1.9
51
Max.
2.7
−
Unit
I = 20 A
V
FM
V
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25_C
F
= 175_C
= 175_C
= 25_C
−
Reverse Recovery Energy
I = 20 A,
E
rec
−
−
mJ
F
dI /dt = 200 A/ms
F
Diode Reverse Recovery Time
T
rr
−
35
−
ns
= 175_C
= 25_C
= 175_C
−
214
58
−
Diode Reverse Recovery Charge
Q
−
−
mC
rr
−
776
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS
120
90
60
30
0
120
T
C
= 25°C
T
C
= 175°C
20 V
15 V
12 V
20V
15 V
12 V
10 V
90
60
30
0
10 V
V
GE
= 8 V
V
= 8 V
GE
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
120
120
90
60
30
0
Common Emitter
Common Emitter
V
T
C
= 15 V
V
T
C
= 20 V
GE
CE
= 25°C
= 25°C
C
C
T
= 175°C
90
60
30
0
T
= 175°C
2
4
6
8
10
12
14
[V]
16
0
1
2
3
4
5
6
Collector−Emitter Voltage, VCE [V]
Gate−Emitter Voltage,V
GE
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
5
20
Common Emitter
= 15 V
Common Emitter
C
V
T
= −40°C
GE
16
12
8
4
3
2
1
80 A
40 A
80 A
40 A
4
0
I
C
= 20 A
8
I
C
= 20 A
100
−100 −50
0
50
150
200
o
4
12
16
20
Collector−Emitter Case Temperature, TC[ C]
Gate−Emitter Voltage, VGE [V]
Figure 6. Saturation Voltage vs. VGE
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
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4
FGH40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
20
16
12
8
20
Common Emitter
C
Common Emitter
C
T
= 25°C
T
= 175°C
16
12
8
I
C
= 20 A
80 A
80 A
40 A
40 A
4
4
I
C
= 20 A
0
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, V [V]
GE
Gate−Emitter Voltage, V [V]
GE
Figure 8. Saturation Voltage vs. VGE
Figure 7. Saturation Voltage vs. VGE
10000
1000
100
15
Common Emitter
C
Common Emitter
T
= 25°C
V
= 0 V, f = 1 MHz
GE
C
300 V
400 V
T
= 25°C
12
9
V
CC
= 200 V
C
iss
6
C
oss
3
0
C
rss
10
1
10
30
0
10
20
30
40
Gate Charge, Q [nC]
Collector−Emitter Voltage, V [V]
g
CE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
300
100
200
100
10
1
ms
10
ms
100
10
1
1 ms
10 ms
DC
*Notes:
1. T = 25°C
C
2. T = 175°C
J
Safe Operating Area
3. Single Pulse
V
GE
= 15 V, T = 175°C
C
0.1
1
10
100
1000
1
10
100
1000
Collector−Emitter Voltage, VCE[V]
Collector−Emitter Voltage, VCE[V]
Figure 12. Turn off Switching SOA
Characteristics
Figure 11. SOA Characteristics
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5
FGH40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
100
1000
Common Emitter
V
= 400 V, V = 15 V
CC
GE
I
= 40 A
C
T
C
T
C
= 25°C
t
r
= 175°C
t
d(on)
100
t
d(off)
10
Common Emitter
V
C
= 400 V, V = 15 V
CC
GE
t
f
I
= 40 A
T
C
T
C
= 25°C
= 175°C
10
0
1
0
10
20
30
40
50
10
20
30
40
50
Gate Resistance, R [W]
Gate Resistance, R [W]
G
G
Figure 13. Turn−on Characteristics vs. Gate
Figure 14. Turn−off Characteristics vs. Gate
Resistance
Resistance
1000
200
Common Emitter
Common Emitter
V
T
C
= 15 V, R = 6 W
V
T
= 15 V, R = 6 W
GE
G
GE
C
C
G
= 25°C
= 25°C
C
T
= 175°C
T
= 175°C
t
t
r
100
10
5
100
10
1
t
f
d(on)
t
d(off)
20
40
60
80
20
40
60
80
Collector Current, I [A]
Collector Current, I [A]
C
C
Figure 15. Turn−on Characteristics vs. Collector
Figure 16. Turn−off Characteristics vs. Collector
Current
Current
20000
20000
Common Emitter
Common Emitter
V
I
= 400 V, V = 15 V
V
T
C
= 15 V, R = 6 W
CC
GE
10000
1000
100
GE
G
10000
1000
100
= 40 A
= 25°C
C
C
T
C
T
C
= 25°C
E
on
T
= 175°C
= 175°C
E
on
E
off
E
off
0
10
20
30
40
50
30
60
Collector Current, I [A]
Gate Resistance, R [W]
G
C
Figure 17. Switching Loss vs Gate Resistance
Figure 18. Switching Loss vs Collector Current
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6
FGH40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
100
10000
T
T
= 175°C
= 125°C
C
1000
100
10
C
T = 125°C
J
T = 175°C
J
10
1
1
T
T
T
T
= 25°C
= 75°C
= 125°C
= 175°C
T
= 25°C
C
C
C
C
C
T = 75°C
J
0.1
0.01
T = 25°C
J
0
1
2
3
4
5
50
200
400
600 650
Forward Voltage, V [V]
F
Reverse Voltage, V [V]
R
Figure 20. Reverse Current
Figure 19. Forward Characteristics
800
600
400
200
0
300
250
200
T
C
T
C
= 25°C
T
C
T
C
= 25°C
= 175°C
= 175°C
150
100
di/dt = 100 A/ms
di/dt = 200 A/ms
di/dt = 100 A/ms
di/dt = 200 A/ms
50
0
0
10
20
30
40
50
0
10
20
30
40
50
Forward Current, I [A]
Forward Current, I [A]
F
F
Figure 22. Reverse Recovery Time
Figure 21. Stored Charge
8
6
4
di/dt = 200 A/ms
di/dt = 100 A/ms
di/dt = 200 A/ms
2
0
di/dt = 100 A/ms
T
C
T
C
= 25°C
= 175°C
0
10
20
30
40
Forward Current, I [A]
F
Figure 23. Reverse Recovery Current
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7
FGH40T65SPD−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
Single Pulse
t
1
t
2
Duty Factor, D = t /t
1
2
Peak Tj = Pdm x Zqjc + T
C
−3
1E
−5
−4
−3
−2
−1
0
10
10
10
10
10
10
Rectangular Pulse Duration [s]
Figure 24. Transient Thermal Impedance of IGBT
5
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P
DM
Single Pulse
t
1
0.01
t
2
Duty Factor, D = t /t
1
2
Peak Tj = Pdm x Zqjc + T
C
−3
1E
0
−5
−4
−3
−2
−1
10
10
10
10
10
10
Rectangular Pulse Duration [s]
Figure 25. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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