FGA15N120ANTDTU-F109 [ONSEMI]
IGBT，1200V，15A，NPT 沟槽;
| 型号： | FGA15N120ANTDTU-F109 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，15A，NPT 沟槽 栅 双极性晶体管 |
| 文件： | 总10页 (文件大小：991K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGA15N120ANTDTU
1200 V, 15 A NPT Trench IGBT
Description
Using ON Semiconductor's proprietary trench design and
advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high
avalanche ruggedness and easy parallel operation.
Features
•
NPT Trench Technology, Positive temperature coefficient
•
Low Saturation Voltage: VCE(sat), typ = 1.9 V
@ IC = 15 A and TC = 25C
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven.
•
•
Low Switching Loss: Eoff, typ = 0.6 mJ
@ IC = 15 A and TC = 25C
Extremely Enhanced Avalanche Capability
C
G
TO-3P
E
G
C
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
V
VCES
VGES
IC
Collector-Emitter Voltage
1200
Gate-Emitter Voltage
20
V
Collector Current
@ TC
=
25C
30
A
Collector Current
@ TC = 100C
15
A
ICM
IF
IFM
PD
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
45
A
@ TC = 25C
@ TC = 100C
30
15
A
A
45
A
@ TC
=
25C
186
W
W
C
C
C
@ TC = 100C
74
TJ
-55 to +150
-55 to +150
300
Tstg
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.67
2.88
40
Unit
RJC
RJC
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
--
--
--
C/W
C/W
C/W
RJA
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Publication Order Number:
FGA15N120ANTDTU/D
©2006 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Package Marking and Ordering Information
Packing
Method
Part Number
Top Mark
Package
Reel Size Tape Width Quantity
FGA15N120ANTDTU-F109 FGA15N120ANTDTU
TO-3P
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
--
--
--
--
3
mA
nA
± 250
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 15 mA, VCE = VGE
IC = 15 A, VGE = 15 V
4.5
--
6.5
1.9
2.2
8.5
2.4
--
V
V
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 15 A, VGE = 15 V,
--
TC = 125C
IC = 30 A, VGE = 15 V
--
2.3
--
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
VCE = 30 V VGE = 0 V,
f = 1 MHz
--
--
--
2650
143
96
--
--
--
pF
pF
pF
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VCC = 600 V, IC = 15 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
20
--
--
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
160
100
3
--
ns
180
4.5
0.9
5.4
--
ns
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
0.6
3.6
15
VCC = 600 V, IC = 15 A,
RG = 10 , VGE = 15 V,
20
--
ns
Inductive Load, TC = 125C
td(off)
tf
Turn-Off Delay Time
Fall Time
170
150
3.2
0.8
4.0
120
16
--
ns
--
ns
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
4.8
1.2
6.0
180
22
65
mJ
mJ
mJ
nC
nC
nC
VCE = 600 V, IC = 15 A,
VGE = 15 V
Qge
Qgc
50
www.onsemi.com
2
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
VFM
Diode Forward Voltage
IF = 15 A
TC
C = 125C
TC 25C
TC = 125C
TC 25C
TC = 125C
TC 25C
C = 125C
=
25C
--
--
--
--
--
--
--
--
1.7
1.8
2.7
--
V
T
trr
Diode Reverse Recovery Time
IF = 15 A
diF/dt = 200 A/s
=
210
280
27
330
--
ns
A
Irr
Diode Peak Reverse Recovery Cur-
rent
=
40
--
31
Qrr
Diode Reverse Recovery Charge
=
2835
4340
6600
--
nC
T
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
150
200
TC = 25oC
Common Emitter
VGE = 15V
20V
17V
15V
12V
TC
TC = 125oC
=
25oC
120
90
60
30
0
150
VGE = 10V
100
50
0
0
2
4
6
8
10
0
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Figure 4. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.0
2.5
2.0
1.5
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
16
IC = 24A
12
8
IC = 15A
4
15A
24A
IC = 7.5A
0
0
4
8
12
16
20
25
50
75
100
125
150
Gate-Emitter Voltage, VGE [V]
Case Temperature, TC [oC]
Figure 5. Saturation Voltage vs. V
Figure 6. Capacitance Characteristics
GE
3500
Common Emitter
TC = 125oC
16
3000
2500
2000
1500
1000
500
Ciss
12
8
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
4
24A
15A
Coss
Crss
IC = 7.5A
8
0
0
0.1
1
10
0
4
12
16
20
Collector-Emitter Voltage, VCE[V]
Gate-Emitter Voltage, VGE [V]
www.onsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Turn-On Characteristics vs. Gate
Resistance
Figure 8. Turn-Off Characteristics vs. Gate
Resistance
100
Common Emitter
VCC = 600V, VGE = 15V
1000
IC = 15A
td(off)
TC = 25oC
TC = 125oC
tr
10
td(on)
100
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
10
1
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Gate Resistance, RG []
Gate Resistance, RG[]
Figure 9. Switching Loss vs. Gate Resistance
Figure 10. Turn-On Characteristics vs.
Collector Current
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
VGE = 15V, RG = 10
TC = 25oC
IC = 15A
TC = 25oC
100
TC = 125oC
10
TC = 125oC
tr
Eon
td(on)
Eoff
10
1
10
15
20
25
30
0
10
20
30
40
50
60
70
Collector Current, IC [A]
Gate Resistance, RG []
Figure 11. Turn-Off Characteristics vs.
Collector Current
Figure 12. Switching Loss vs. Collector Current
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
10
TC = 125oC
Eon
Eoff
td(off)
100
1
tf
10
0.1
10
15
20
25
30
5
10
15
20
25
30
Collector Current, IC [A]
Collector Current, IC [A]
www.onsemi.com
5
Typical Performance Characteristics (Continued)
Figure 13. Gate Charge Characteristics
Figure 14. SOA Characteristics
15
Common Emitter
RL = 40
100
TC = 25oC
Ic MAX (Pulsed)
12
50s
Ic MAX (Continuous)
100s
1ms
600V
10
1
9
400V
DC Operation
6
3
0
Vcc = 200V
Single Nonrepetitive
Pulse Tc = 25o
Curves must be derated
linearly with increase
in temperature
0.1
0.01
C
0
20
40
60
80
100
120
0.1
1
10
100
1000
Collector - Em itter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 15. Turn-Off SOA
100
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 16. Transient Thermal Impedance of IGBT
10
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
t1
0.01
1E-3
t2
single pulse
1E-4
Duty factor D = t1 / t2
Peak Tj = Pdm
1
Zthjc + T
C
1E-5
1E-3
0.01
0.1
10
Rectangular Pulse Duration [sec]
www.onsemi.com
6
Typical Performance Characteristics (Continued)
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
50
30
diF/dt = 200A/s
25
20
10
TJ = 125oC
15
diF/dt = 100A/s
TJ = 25oC
1
10
5
TC = 125oC
TC = 25oC
0.1
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
5
10
15
20
25
Forward Voltage , VF [V]
Forward Current , IF [A]
Figure 19. Stored Charge
Figure 20. Reverse Recovery Time
7000
400
6000
diF/dt = 200A/s
diF/dt = 100A/s
300
200
100
0
5000
4000
3000
2000
1000
0
diF/dt = 100A/s
diF/dt = 200A/s
5
10
15
20
25
5
10
15
20
25
Forward Current , IF [A]
Forward Current , IF [A]
www.onsemi.com
7
Mechanical Dimensions
Figure 21. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FGA180N30DTU
Insulated Gate Bipolar Transistor, 180A I(C), 300V V(BR)CES, N-Channel, LEAD FREE, TO-3P, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明