FFH50US60S [ONSEMI]
50A，600V，STEALTH™ 二极管;
| 型号： | FFH50US60S |
| 厂家： | 
ONSEMI |
| 描述： | 50A，600V，STEALTH™ 二极管 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：384K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STEALTHt Diode
50 A, 600 V
FFH50US60S
Description
The FFH50US60S is a STEALTHt diode optimized for low loss
performance in output rectification. The STEALTH family exhibits
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low reverse recovery current (I ), low V and soft recovery under
RR
F
typical operating conditions. This device is intended for use
as an output rectification diode in Telecom power supplies and other
power switching applications. Lower V and I reduces diode losses.
F
RR
CATHODE
(BOTTOM
SIDE METAL)
Features
• Stealth Recovery, t = 113 ns (@ I = 50 A)
rr
F
ANODE
• Max Forward Voltage, V = 1.54 V (@ T = 25°C)
F
C
CATHODE
• 600 V Reverse Voltage and High Reliability
• Operating Temperature = 175°C
TO−247
JEDEC STYLE
2 LEAD
• Avalanche Energy Rated
CASE 340 CL
• This Device is Pb−Free and is RoHS Compliant
Applications
• SMPS, Welders
MARKING DIAGRAM
• Power Factor Correction
• Uninterruptible Power Supplies
• Motor Drives
$Y&Z&3&K
50US60S
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
600
600
600
50
Unit
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Average Rectified Forward Current
I
A
F(AV)
(T = 120°C)
C
Repetitive Peak Surge Current
(20 kHz Square Wave )
I
100
500
A
A
FRM
50US60S
= Specific Device Code
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60 Hz)
I
FSM
K
Power Dissipation
P
200
20
W
D
Avalanche Energy
(1 A, 40 mH)
E
AVL
mJ
Operating and Storage Temperature
Range
T
T
−55 to 175
300
°C
°C
°C
J, STG
Maximum Temperature for Soldering Leads
at 0.063 in (1.6 mm) from Case for 10 s
T
L
A
Maximum Temperature for Soldering
Package Body for 10 s
T
260
PKG
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
March, 2020 − Rev. 3
FFH50US60S/D
FFH50US60S
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Methode
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FFH50US60S
FFH50US60S
TO247−2L
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
OFF STATE CHARACTERISTICS
Instantaneous Reverse Current
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
R
V
R
= 600 V
T
C
= 25°C
−
−
−
−
100
1
mA
T
C
= 125°C
mA
ON CHARACTERISTICS
Instantaneous Forward Voltage
V
F
I = 50 A
F
T
= 25°C
−
−
1.38
1.37
1.54
1.53
V
V
C
T
C
= 125°C
DYNAMIC CHARACTERISTICS
Junction Capacitance
SWITCHING CHARACTERISTICS
Reverse Recovery Time
V
= 10 V, I = 0 A
F
C
−
−
110
47
−
pF
ns
R
J
I = 1 A, dI /dt = 100 A/ms, V = 15 V
F
T
rr
80
F
R
I = 50 A, dI /dt = 100 A/ms, V = 15 V
−
−
−
−
−
−
−
75
113
9.6
0.9
235
1.5
15
124
−
ns
ns
A
F
F
R
T
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
I = 50 A, dI /dt = 200 A/ms, V = 390 V,
F F R
rr
T
C
= 25°C
I
−
RR
Q
−
mC
ns
−
RR
T
rr
I = 50 A, dIF/dt = 200 A/ms, V = 390 V,
−
F
C
R
T
= 125°C
S
−
I
Reverse Recovery Current
−
A
RR
Q
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
−
−
−
−
−
−
2.3
110
0.8
−
−
−
−
−
−
mC
ns
RR
T
I = 50 A, dI /dt = 1000 A/ms,
F F
rr
V
= 390 V, T = 125°C
R
C
S
−
I
Reverse Recovery Current
Reverse Recovered Charge
46
A
RR
Q
3.1
mC
A/ms
RR
dI /dt
M
Maximum di/dt during t
1000
b
THERMAL CHARACTERISTICS
R
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
−
−
−
−
0.75
30
°C/W
°C/W
q
JC
TO−247
R
q
JA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FFH50US60S
TYPICAL PERFORMANCE CURVES
100
90
80
70
60
50
40
30
20
10
0
1000
100
10
o
175 C
o
150 C
o
125 C
o
100 C
o
175 C
1
o
o
125 C
75 C
o
75 C
0.1
0.01
o
25 C
o
25 C
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
100
200
300
400
500
600
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Reverse Voltage
225
200
o
o
V
= 390V, T = 125 C
C
V
= 390V, T = 125 C
C
R
R
180
160
140
120
100
80
200
175
150
125
100
75
t
at dI /dt = 200A/ms, 500A/ms, 800A/ms
F
b
t
at I = 100A, 50A, 25A
F
b
60
40
50
20
t
at dI /dt = 200A/ms, 500A/ms, 800A/ms
t
at I = 100A, 50A, 25A
a
F
a
F
0
25
0
10
20
30
40
50
60
70
80
90
100
0
200
400
600
800
1000
1200
I , Forward Current (A)
F
dI /dt, Current Rate of Change (A/ms)
F
Figure 3. ta and tb Curves vs. Forward Current
Figure 4. ta and tb Curves vs. dlF/dt
60
50
40
30
20
10
0
50
o
o
V
= 390V, T = 125 C
V
= 390V, T = 125 C
R
C
R
C
dI /dt = 800A/ms
F
40
30
20
10
0
I
= 100A
F
dI /dt = 500A/ms
F
I
= 50A
F
I
= 25A
F
dI /dt = 200A/ms
F
0
200
400
600
800
1000
1200
0
10
20
30
40
50
60
70
80
90
100
I , Forward Current (A)
F
dI /dt, Current Rate of Change (A/ms)
F
Figure 5. Maximum Reverse Recovery
Current vs. Forward Current
Figure 6. Maximum Reverse
Recovery Current vs. dIF/dt
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3
FFH50US60S
TYPICAL PERFORMANCE CURVES
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
6
o
o
V
= 390V, T = 125 C
C
V
= 390V, T = 125 C
C
R
R
5
4
3
2
1
0
I
= 100A
F
I
= 100A
F
I
= 50A
F
I
= 50A
F
I
= 25A
F
I
= 25A
F
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
dl /dt, Current Rate of Change (A/ms)
F
dl /dt, Current Rate of Change (A/ms)
F
Figure 7. Reverse Recovery Softness Factor vs. dIF/dt
Figure 8. Reverse Recovery Charge vs. dlF/dt
−22
180
170
160
150
140
130
120
110
100
90
1400
I
= 50A, V = 390V, dI /dt = 600A/usec
R F
F
f = 1MHZ
−24
−26
−28
−30
−32
−34
−36
−38
−40
−42
1200
1000
800
600
400
200
0
I
RM(REC)
t
RR
80
0.03
0.1
1
10
100
25
50
75
100
125
150
175
V , Reverse Voltage (V)
R
T , Case Temperature (5C)
C
Figure 9. Junction Capacitance vs. Reverse Voltage
Figure 10. Maximum Reverse Recovery
Current and trr vs. Case Temperature
60
50
40
30
20
10
0
115
125
135
145
155
165
175
T , Case Temperature (5C)
C
Figure 11. DC Current Derating Curve
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4
FFH50US60S
TYPICAL PERFORMANCE CURVES
DUTY CYCLE - DESCENDING ORDER
0.5
1.0
0.1
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
10−4
PEAK T = P
J
x Z
x R + T
q
JA JA A
q
DM
0.01
10−5
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (s)
Figure 12. Normalized Maximum Transient Thermal Impedance
TEST CIRCUITS AND WAVEFORMS
V
GE
AMPLITUDE AND
R
CONTROL dl /dt
G
F
L
t AND t CONTROL I
1
2
F
DUT
CURRENT
SENSE
dI
F
T
rr
R
G
I
F
dt
t
t
b
+
a
V
GE
0
V
−
DD
MOSFET
t
1
0.25I
RM
t
2
I
RM
Figure 13. Trr Test Circuit
Figure 14. Trr Waveforms and Definitions
I = 1 A
L = 40 mH
R < 0.1 W
V
E
= 50 V
DD
2
= 1/2LI [V
/(V −V )]
R(AVL) R(AVL) DD
V
AVL
AVL
Q1 = IGBT (BV
> DUT V
)
R(AVL)
L
CES
R
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
t
2
t
0
1
Figure 15. Avalanche Energy Test Circuit
Figure 16. Avalanche Current and Voltage Waveforms
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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