FFH50US60S-F085 [ONSEMI]
600V，50A，1.69V，TO-247（2 引线）Stealth™ 整流器;
| 型号： | FFH50US60S-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600V，50A，1.69V，TO-247（2 引线）Stealth™ 整流器 软恢复二极管 局域网 软恢复能力电源 |
| 文件： | 总6页 (文件大小：4503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STEALTHt Diode
50 A, 600 V
FFH50US60S-F085
Description
The FFH50US60S−F085 is a STEALTHt diode optimized for low
loss performance in output rectification. The STEALTH family
www.onsemi.com
exhibits low reverse recovery current(I ),low V and soft recovery
RR
F
under typical operating conditions. It has a low forward−voltage drop
and is of silicon nitride passivated.
This device is intended for use as a freewheel/clamping diode
in various automotive switching power supplies and other power
switching applications. Its low stored charge as well as Stealth and soft
recovery characteristics minimize ringing and electrical noise while
reduce the overall power loss.
ANODE
CATHODE
TO−247−2L
Features
• Stealth Recovery, t = 163 ns ( Typ.) @ I = 50 A)
rr
F
• Low Forward Voltage( V = 1.69 V (Max.) @ I = 50 A )
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified
• This Device is Pb−Free
MARKING DIAGRAM
Applications
$Y&Z&3&K
50US60S
• Automotive DCDC Converter
• Automotive On Board Charger
• Switching Power Supply
• Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
600
600
600
50
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
$Y
= ON Semiconductor Logo
V
I
V
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
V
R
V
Average Rectified Forward Current
A
50US60S
= Specific Device Code
F(AV)
(T = 25 °C)
C
Non−repetitive Peak Surge Current
I
150
20
A
FSM
(Halfwave 1 Phase 50 Hz)
Avalanche Energy
(1 A, 40 mH)
E
mJ
°C
AVL
1. Cathode
2. Anode
Operating Junction and Storage
Temperature
T
T
−55 to
+175
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
March, 2020 − Rev. 4
FFH50US60S−F085/D
FFH50US60S−F085
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tube
Quantity
FFH50US60S
FFH50US60S−F085
TO247−2L
−
30
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
−
Max.
100
Unit
mA
mA
V
I
R
Instantaneous Reverse Current
V
= 600 V
T
C
T
C
T
C
T
C
= 25°C
−
−
−
R
= 175°C
= 25°C
−
1000
1.69
V
FM
Instantaneous Forward Voltage
Reverse Recovery Time
I = 50 A
F
1.27
(Note 1)
= 175°C
−
−
1.19
41
1.57
82
V
I = 1 A,
F
T
C
= 25°C
t
rr
ns
di/dt = 200 A/ms,
(Note 2)
V
R
= 390 V
I = 50 A,
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
F
−
163
364
−
−
ns
ns
di/dt = 200 A/ms,
V
R
= 390 V
−
−
ta
tb
rr
Reverse Recovery Time
I = 50 A,
65
98
886
−
−
−
ns
ns
nC
F
di/dt = 200 A/ms,
Q
Reverse Recovery Charge
V
R
= 390 V
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TEST CIRCUITS AND WAVEFORMS
V
GE
AMPLITUDE AND
R
CONTROL dl /dt
G
F
L
t AND t CONTROL I
1
2
F
DUT
CURRENT
SENSE
dI
F
T
rr
R
G
I
F
dt
t
t
b
+
a
V
GE
0
V
−
DD
IGBT
t
1
0.25I
RM
t
2
I
RM
Figure 1. Trr Test Circuit
Figure 2. Trr Waveforms and Definitions
I = 1 A
L = 40 mH
R < 0.1 W
2
E
AVL
= 1/2LI [V
/(V −V )]
R(AVL) R(AVL) DD
Q = IGBT (BV
> DUT V
)
V
AVL
1
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
t
2
t
0
1
Figure 3. Avalanche Energy Test Circuit
Figure 4. Avalanche Current and Voltage Waveforms
www.onsemi.com
2
FFH50US60S−F085
TYPICAL PERFORMANCE CHARECTERISTICS
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
Figure 6. Typical Reverse
Current vs. Reverse Voltage
V , Reverse Voltage (V)
R
di/dt (A/ms)
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse
Recovery Time vs. di/dt
T , Case Temperature (5C)
di/dt (A/ms)
C
Figure 9. Typical Reverse Recovery
Current vs. di/dt
Figure 10. Forward Current Derating Curve
www.onsemi.com
3
FFH50US60S−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
di/dt, (A/ms)
Figure 11. Reverse Recovery Charge
t , Square Wave Pulse Duration (s)
1
Figure 12. Transient Thermal Response Curve
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明