FFH75H60S [ONSEMI]
75 A、600 V 超高速二极管;型号: | FFH75H60S |
厂家: | ONSEMI |
描述: | 75 A、600 V 超高速二极管 超快软恢复二极管 超高速软恢复二极管 快速软恢复二极管 局域网 |
文件: | 总6页 (文件大小:389K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Hyperfast Diode
75 A, 600 V
FFH75H60S
Description
The FFH75H60S is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is
silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended to be used as freewheeling/clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
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Features
• Hyperfast Recovery t = 75 ns (@ I = 75 A)
rr
F
1. Cathode
1
2. Anode
2
• Max Forward Voltage, V = 1.8 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
TO−247−2LD
CASE 340CL
Applications
• General Purpose
• SMPS, Solar Inverter, UPC
• Power Switching Circuits
• Solar Inverter, UPC
1
2
2. Anode
1. Cathode
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
MARKING DIAGRAM
Parameter
Symbol
Ratings
600
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
600
V
$Y&Z&3&K
FFH
V
R
600
V
75H60S
Average Rectified Forward Current
C
I
75
A
F(AV)
(T = 105°C)
Non−repetitive Peak Surge Current
60 Hz Single Half−Sine Wave
I
750
A
FSM
Operating Junction and Storage
Temperature
T
T
−65 to
175
°C
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FFH75H60S
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
March, 2020 − Rev. 3
FFH75H60S/D
FFH75H60S
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Max
Unit
Maximum Thermal Resistance, Junction to Case
R
0.4
°C/W
q
JC
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
30
FFH75H60S
FFH75H60S
TO−247−2LD
Tube
N/A
N/A
ELECTRICAL Characteristics (T = 25°C unless otherwise specified)
C
Parameter
Conditions
Min
−
Typ
1.8
1.6
−
Max
2.2
2.0
100
1.0
75
−
Unit
V
V (Note 1)
F
I = 75 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
F
I = 75 A
F
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 25°C
= 25°C
−
V
I
(Note 1)
V
R
V
R
= 600 V
−
mA
mA
ns
R
rr
= 600 V
−
−
t
I = 75 A, dI /dt = 200 A/ms, V = 390 V
−
40
85
23
17
80
−
F
F
R
−
ns
t
t
I = 75 A, dI /dt = 200 A/ms, V = 390 V
−
−
ns
a
F
F
R
−
−
ns
b
Q
−
nC
mJ
rr
W
AVL
Avalanche Energy (L = 40 mH)
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2%
TEST CIRCUITS AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
t
rr
F
I
F
DUT CURRENT
SENSE
t
b
t
a
R
G
0
+
V
DD
V
GE
−
0.25 I
RM
IGBT
t
1
I
RM
t
2
t
rr
Test Circuit
t
rr
Waveforms and Definitions
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
I = 1 A
L = 40 mH
R < 0.1 W
V
AVL
2
E
= 1/2LI [V
/(V
− V )]
R(AVL
AVL
R(AVL)
R(AVL)
DD
Q = IGBT (BV
> DUT V
)
R
L
1
CES
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
Avalanche Energy Test Circuit
−
t
t
1
t
2
t
0
Avalanche Current and Voltage Waveforms
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
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2
FFH75H60S
TYPICAL PERFORMANCE CHARACTERISTICS
400
100
100
10
T
C
= 125°C
T
C
= 125°C
1
T
C
= 75°C
T
C
= 75°C
10
1
0.1
T
= 25°C
C
T
C
= 25°C
0.01
3
600
0
1
2
10
150
300
450
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 4. Typical Reverse Current
vs. Reverse Voltage
Figure 3. Typical Forward Voltage Drop
vs. Forward Current
120
90
60
30
0
800
I = 75 A
F
Typical Capacitance
at 0 V = 681 pF
T
= 125°C
= 75°C
C
600
400
200
0
T
C
T
= 25°C
C
500
100
200
300
di/dt (A/ms)
400
10
100
1
0.1
V
R,
Reverse Voltage (V)
Figure 6. Typical Reverse Recovery Time
vs. di/dt
Figure 5. Typical Junction Capacitance
200
20
15
10
5
175
150
125
100
75
T
C
= 125°C
T
C
= 75°C
T
C
= 25°C
50
25
I = 75 A
F
0
0
100
175
25
50
75
100
125
150
200
300
di/dt (A/ms)
400
500
T , Case Temperature (°C)
C
Figure 8. Forward Current Derating Curve
Figure 7. Typical Reverse Recovery Current
vs. di/dt
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3
FFH75H60S
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.1
0.01
P
DM
t
1
t
2
*Notes:
1. Z (t) = 0.4°C/W Max.
q
JC
2. Duty Factor, D = t /t
1
2
3 T − T = P
* Z (t)
q
JC
.
JM
C
DM
0.001
−5
−2
−1
−4
−3
1
10
10
10
10
10
Rectangular Pulse Duration (sec)
Figure 9. Transient Thermal Response Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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