FDZ391P [ONSEMI]
-20V P沟道1.5 V PowerTrench®薄型WL-CSP MOSFET;
| 型号： | FDZ391P |
| 厂家： | 
ONSEMI |
| 描述： | -20V P沟道1.5 V PowerTrench®薄型WL-CSP MOSFET 开关 晶体管 |
| 文件： | 总9页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2008
FDZ391P
P-Channel 1.5 V PowerTrench Thin WL-CSP MOSFET
tm
®
-20 V, -3 A, 85 mΩ
Features
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench process
with state of the art "low pitch" Thin WLCSP packaging process,
the FDZ391P minimizes both PCB space and rDS(on). This
Max rDS(on) = 85 mΩ at VGS = -4.5 V, ID = -1 A
Max rDS(on) = 123 mΩ at VGS = -2.5 V, ID = -1 A
Max rDS(on) = 200 mΩ at VGS = -1.5 V, ID = -1 A
Occupies only 1.5 mm2 of PCB area
advanced WLCSP MOSFET embodies
a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on)
.
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
Applications
RoHS Compliant
Battery management
Load switch
Battery protection
Pin 1
S
S
S
G
D
S
G
D
D
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
BOTTOM
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
-20
V
V
±8
TA = 25 °C
(Note 1a)
-3
-15
ID
A
Power Dissipation
TA = 25 °C
TA = 25 °C
(Note 1a)
(Note 1b)
1.9
PD
W
Power Dissipation
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
65
°C/W
133
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7 ’’
Tape Width
Quantity
6
FDZ391P
WL-CSP Thin
8 mm
5000 units
1
©2008 Fairchild Semiconductor Corporation
FDZ391P Rev.B1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 µA, VGS = 0 V
-20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = -250 µA, referenced to 25 °C
-12
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
-0.4
-0.6
2
-1.5
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = -250 µA, referenced to 25 °C
VGS = -4.5 V, ID = -1 A
GS = -2.5 V, ID = -1 A
mV/°C
74
90
85
V
123
200
123
rDS(on)
Drain to Source On Resistance
mΩ
VGS = -1.5 V, ID = -1 A
140
100
VGS = -4.5 V, ID = -1 A TJ = 125 °C
VGS = -4.5 V, VDS = - 5 V
VDS = -5 V, ID = -1 A
ID(on)
gFS
On to State Drain Current
Forward Transconductance
-10
A
S
7
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
800
155
90
1065
205
pF
pF
pF
Ω
VDS = -10 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
135
f = 1 MHz
9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
10
50
30
9
20
20
80
48
13
ns
ns
ns
ns
nC
nC
VDD = -10 V, ID = -1 A
V
GS = -4.5 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
Qg
Total Gate Charge
Gate to Source Gate Charge
VGS = -4.5 V
DD = -10 V
D = -1 A
V
Qgs
1
I
Qgd
Gate to Drain “Miller” Charge
2
nC
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Source Diode Forward Current
-1.1
-1.2
A
V
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = -1.1 A (Note 2)
-0.7
21
5
ns
nC
IF = -1 A, di/dt = 100 A/µs
Qrr
Reverse Recovery Charge
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θCA
θJA
θJC
the user's board design.
b. 133 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 65 °C/W when mounted on
a 1 in pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
www.fairchildsemi.com
2
FDZ391P Rev.B1
Typical Characteristics TJ = 25 °C unless otherwise noted
16
14
2.0
1.8
1.6
1.4
1.2
1.0
0.8
PULSE DURATION = 300
µs
DUTY CYCLE = 2.0% MAX
VGS = -1.5 V
VGS = -2.0 V
V
= -2.0 V
GS
12
10
8
V
V
= -4.5 V
GS
VGS = -2.5 V
VGS = -3.5 V
= -3.5 V
= -2.5 V
GS
V
GS
6
V
= -1.5 V
4
GS
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
µs
2
VGS = -4.5 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
12
14
16
-V , DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
DS
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
240
200
160
120
80
1.5
ID = -1 A
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
µs
I
= - 0.5 A
D
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS = -4.5 V
T = 125 o
C
J
T
J
= 25 oC
2
40
1
3
4
5
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE ( )
oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
15
12
9
60
10
V
= 0 V
GS
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
µs
V
DD
= -5 V
1
0.1
T = 125 o
C
J
T
J
= 25 o
C
6
0.01
T = 125 o
J
C
T
= 25 o
C
T C
= -55 o
J
J
3
0.001
0.0001
T
= -55 o
C
J
0
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.0
1.5
2.0
2.5
V , BODY DIODE FORWARD VOLTAGE (V)
SD
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
3
FDZ391P Rev.B1
Typical Characteristics TJ = 25 °C unless otherwise noted
5
2000
1000
I
D
= -1 A
4
3
2
1
0
V
= -5 V
DD
C
iss
V
= -10 V
DD
V
= -15 V
DD
C
oss
f = 1 MHz
= 0 V
100
50
C
rss
V
GS
0.1
1
10
20
0
2
4
6
8
10
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
4
30
10
VGS = -4.5 V
3
100 us
1 ms
1
0.1
2
10 ms
THIS AREA IS
LIMITED BY rDS(on)
VGS = - 2.5 V
100 ms
1 s
SINGLE PULSE
TJ = MAX RATED
RθJA = 133 oC/W
TA = 25 oC
1
10 s
DC
RθJA = 65 oC/W
0
25
0.01
60
50
75
100
125
oC
150
0.1
1
10
-VS, SOURCE1 TO SOURCE2 VOLTAGE (V)
TA, CASE TEMPERATURE
(
)
Figure9. Maximum Continuous Drain
Current vs Ambient Temperature
Figure10. Forward Bias Safe
Operating Area
50
VGS = -10 V
10
SINGLE PULSE
RθJA = 133 oC/W
= 25 o
TA C
1
0.5
10-3
10-2
10-1
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
www.fairchildsemi.com
4
FDZ391P Rev.B1
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 133 oC/W
1
2
PEAK T = P
x Z
x R
+ T
θJA A
J
DM
θJA
0.01
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12. Transient Thermal Response Curve
www.fairchildsemi.com
5
FDZ391P Rev.B1
Dimensional Outline and Pad Layout
www.fairchildsemi.com
6
FDZ391P Rev.B1
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I37
FDZ391P Rev.B1
7
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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