FDY3000NZ [ONSEMI]
双 N 沟道,2.5V 指定,PowerTrench™ MOSFET,20V,0.6A,700mΩ;型号: | FDY3000NZ |
厂家: | ONSEMI |
描述: | 双 N 沟道,2.5V 指定,PowerTrench™ MOSFET,20V,0.6A,700mΩ 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:456K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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January 2007
tm
FDY3000NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This Dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v.
x 600 mA, 20 V RDS(ON) = 700 m:ꢀ@ VGS = 4.5 V
RDS(ON) = 850 m: @ VGS = 2.5 V
Applications
x ESD protection diode (note 3)
x RoHS Compliant
x Li-Ion Battery Pack
6
5
4
D1
6
S1
G1
D2
1
5
4
G2
S2
2
3
1
2
3
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
r 12
V
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
600
1000
mA
PD
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
625
446
mW
TJ, TSTG
Operating and Storage Junction Temperature
Range
–55 to +150
qC
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
200
280
RTJA
RTJA
qC/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
C
FDY3000NZ
7 ’’
8 mm
3000 units
www.fairchildsemi.com
2007 Fairchild Semiconductor Corporation
FDY3000NZ Rev B
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
20
V
VGS = 0 V,
ID = 250 PA
Voltage
Breakdown Voltage Temperature
14
'BVDSS
ꢀꢀꢀ'TJ
IDSS
ID = 250 PA, Referenced to 25qC
mV/qC
Coefficient
Zero Gate Voltage Drain Current VDS = 16 V,
VGS = 0 V
VGS = r 12 V, VDS = 0 V
VGS = r 4.5 V, VDS = 0 V
1
r 10
r 1
PA
PA
PA
IGSS
Gate–Body Leakage,
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
0.6
1.0
– 3
1.3
V
V
DS = VGS
,
ID = 250 PA
Gate Threshold Voltage
'VGS(th)
ꢀꢀꢀ'TJ
RDS(on)
ID = 250 PA, Referenced to 25qC
mV/qC
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 4.5 V,
VGS = 2.5 V,
VGS = 1.8 V,
VGS = 4.5 V, ID=600mA, TJ = 125qC
VDS = 5 V,
ID = 600 mA
ID = 500 mA
ID = 150 mA
0.25 0.70
0.37 0.85
0.73 1.25
0.35 1.00
:
gFS
Forward Transconductance
ID = 600 mA
1.8
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
60
20
10
pF
pF
pF
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
ns
ns
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 :
8
16
ns
2.4
0.8
0.16
0.26
4.8
1.1
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 10 V,
ID = 600 mA,
VGS = 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 150 mA (Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
IF = 600 mA,
dIF/dt = 100 A/µs
8
1
nS
nC
Qrr
Diode Reverse Recovery Charge
Notes:
1.
RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design
a)
200°C/W when
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
mounted on a 1in2 pad
of 2 oz copper
2. Pulse Test: Pulse Width < 300Ps,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY3000NZ Rev B
www.fairchildsemi.com
Typical Characteristics
1
2.6
2.4
2.2
2
VGS = 4.5V
3.5V
3.0V
2.5V
VGS = 2.0V
0.8
0.6
0.4
0.2
0
2.0V
1.8
1.6
1.4
1.2
1
2.5V
3.0V
3.5V
4.5V
0.8
0
0.2
0.4
0.6
0.8
1
0
0.25
0.5
0.75
1
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1
1.6
ID = 600mA
ID = 300mA
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
GS = 4.5V
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
1
VGS = 0V
VDS = 5V
0.8
0.1
TA = 125oC
0.6
0.4
0.2
0
0.01
25oC
TA = 125oC
-55oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
VSD, BODY DIODE FORW ARD VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY3000NZ Rev B
www.fairchildsemi.com
Typical Characteristics
5
100
90
80
70
60
50
40
30
20
10
0
f = 1MHz
GS = 0 V
ID = 600mA
V
4
VDS = 5V
Ciss
10V
15V
3
2
1
0
Coss
Crss
0
0.2
0.4
0.6
0.8
1
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
30
25
20
15
10
5
SINGLE PULSE
RTJA = 280°C/W
T
A = 25°C
RDS(ON) LIMIT
1ms
1
0.1
10ms
100ms
10s
1s
DC
VGS = 4.5V
SINGLE PULSE
R
TJA = 280oC/W
TA = 25oC
0
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
TJA(t) = r(t) * RTJA
R
TJA =280 °C/W
0.2
P(pk)
0.1
0.1
0.05
t1
t2
0.02
0.01
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY3000NZ Rev B
www.fairchildsemi.com
SOT−563
CASE 419BH
ISSUE O
1.70
1.50
A
B
6
1
4
1.42
0.72
1.30
1.10
1.70
1.50
0.1 C B A
3
0.30
0.50
0.20
0.50
0.50
LAND PATTERN
RECOMMENDATION
TOP VIEW
0.60
0.50
C
SEATING PLANE
0.10
0.00
0.20
0.08
0.05 C
C
NOTES: UNLESS OTHERWISE SPECIFIED.
A. REFERENCE TO JEDEC MO293.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C
DOES NOT COMPLY JEDEC STANDARD VALUE
0.30
0.10
0.46
0.20
C
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSION.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
F. LANDPATTERN RECOMMENDATION GENERATED
WITH IPC LANDPATTERN GENERATOR
0.31
0.15
0.10
0.05
M
M
C A B
C
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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