FDY4000CZ_技术文档

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

November 2009

FDY4000CZ

Complementary N & P-Channel PowerTrench^®

MOSFETꢀ

Features

General Description

Q1: N-Channel

This Complementary N & P-Channel MOSFET has been

designed using Fairchild Semiconductor’s advanced Power

Trench^®process to optimize the r_DS(ON)@ V_GS= 2.5V and

specify the r_DS(ON)@ V_GS= 1.8V.

Max r_DS(on) 0.7ꢁ at V_GS= 4.5V, I_D= 600mA

Max r_DS(on) 0.85ꢁ at V_GS= 2.5V, I_D= 500mA

Max r_DS(on) 1.25ꢁ at V_GS= 1.8V, I_D=150 mA

Applications

Q2: P-Channel

Level shifting

Max r_DS(on) 1.2ꢁ at V_GS= -4.5V, I_D= -350mA

Max r_DS(on) 1.6ꢁ at V_GS= -2.5V, I_D= -300mA

Max r_DS(on) 2.7ꢁ at V_GS= -1.8V, I_D= -150mA

ESD protection diode (note 3)

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

RoHS Compliant

6

5

4

3

S2

4

5

6

D2

G1

S1

2

1

G2

D1

1

2

3

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Q1

20

12

600

1000

Q2

-20

8

-350

-1000

Units

V

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

(Note 1a)

I_D

mA

625

446

Power Dissipation (Steady State)

(Note 1a)

(Note 1b)

P_D

mW

T_J, T_STG

Operating and Storage Jaunting Temperature Range

-55 to 150

°C

Thermal Characteristics

R_ꢂJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

200

280

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

E

FDY4000CZ

SC89-6

7”

8mm

3000units

FDY4000CZ Rev. B2

1

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Type Min Typ Max Units

Off Characteristics

Drain to Source Breakdown Volt- I_D= 250ꢃA, V_GS= 0V

Q1

Q2

20

-20

B_VDSS

ꢀ

V

age _D= -250ꢃA, V_GS= 0V

I

ꢄB_VDSS

ꢀꢀꢀꢄT_J

Breakdown Voltage Temperature I_D= 250ꢃA, referenced to 25°C

Q1

Q2

Q1

Q2

15

-15

mV/°C

ꢃA

Coefficient

I

_D= -250ꢃA, referenced to 25°C

V

_DS= 16V, V_DS=0V

_DS= -16V, V_DS=0V

1

-3

I_DSS

Zero Gate Voltage Drain Current

V_GS

=

12V, V_DS= 0V

4.5V, V_DS= 0V

8V, V_DS= 0V

Q1

Q2

10

1

10

I_GSS

Gate-Body Leakage

ꢃA

On Characteristics ^{(note 2)}

V

_GS= V_DS, I_D= 250ꢃA

_GS= V_DS, I_D= -250ꢃA

Q1

0.6

1.0

1.5

V_GS(th)

Gate to Source Threshold Voltage

V

Q2 -0.6 -1.0 -1.5

ꢄV_GS(th)

ꢀꢀꢀꢄT_J

Gate to Source Threshold Voltage I_D= 250ꢃA, referenced to 25°C

Q1

Q2

-3

3

ꢀꢀ

mV/°C

Temperature Coefficient

I_D= -250ꢃA, referenced to 25°C

V

_GS= 4.5V, I_D= 600mA

0.30 0.70

0.40 0.85

0.80 1.25

0.35 1.00

_GS= 2.5V, I_D= 500mA

Q1

Q2

ꢀ

_GS= 1.8V, I_D= 150mA,

_GS= 4.5V, I_D= 600mA,T_J= 125°C

r_DS(on)

Drain to Source On Resistance

ꢁ

_GS= -4.5V, I_D= --350mA

_GS= -2.5V, I_D= -300mA

_GS= -1.8V, I_D= -150mA

0.5

0.8

1.3

0.7

1.2

1.6

2.7

1.6

_GS= -4.5V, I_D= -350mA, T_J=125°C

V

_DS= 5V, I_D= 600mA

_DS= -5V, I_D= -350mA

Q1

Q2

1.8

1

g_FS

Forward Transconductance

S

Dynamic Characteristics

Q1

Q2

Q1

Q2

Q1

Q2

60

Q1

C_iss

C_oss

C_rss

Input Capacitance

pF

100

V_DS= 10V, V_GS= 0V, f = 1MHz

20

30

10

15

Output Capacitance

Q2

V_DS= -10V, V_GS= 0V, f = 1MHz

Reverse Transfer Capacitance

Switching Characteristics

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

6

8

13

8

12

16

23

16

4.8

2

Q1

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

ns

V

_DD= 10V, I_D= 1A,

_GS= 4.5V, R_g= 6ꢁ

Rise Time

Q2

Turn-Off Delay Time

Fall Time

ns

V_DD= -10V, I_D= -0.5A,

V

_GS= -4.5V, R_g= 6ꢁ

2.4

1

ns

Q1

Q2

Q1

Q2

Q1

Q2

0.8

1.0

0.16

0.2

0.26

0.3

1.1

1.4

Q_g

Total Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller”Charge

nC

Q1

V

_DS= 10V, I_D= 600mA, V_GS= 4.5V

Q_gs

Q_gd

Q2

V

_DS= -10V, I_D= -350mA, V_GS= -4.5V

2

www.fairchildsemi.com

FDY4000CZ Rev. B2

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Type Min Typ Max Units

Drain-Source Diode Characteristics

Source to Drain Diode Forward

V_GS= 0V, I_S= 150mA (Note 2)

Q1

Q2

0.7

1.2

V_SD

V

Voltage

V

_GS= 0V, I_S= -150mA (Note 2)

-0.8 -1.2

Q1

Q2

Q1

Q2

8

Q1

t_rr

Reverse Recovery Time

ns

nC

11

I_F= 600mA, di/dt = 100A/ꢃs

Q2

1

2

Q_rr

Reverse Recovery Charge

I_F= -350mA, di/dt = 100A/ꢃs

Notes:

1: R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

ꢂJA

the drain pins. R is guaranteed by design while R

is determined by the user's board design.

ꢂJC

ꢂJA

b) 280°C/W when mounted

on a minimum pad of 2 oz

copper

a) 200°C/W when mounted

2

on a 1 in pad of 2 oz copper

Scale 1:1 on letter size paper

2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%

3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

3

www.fairchildsemi.com

FDY4000CZ Rev. B2

Typical Characteristics Q1 (N-Channel)

1

2.6

2.4

2.2

2

9_*6ꢁ ꢁꢉꢆꢇ9

ꢊꢆꢈ9

ꢊꢆꢇ9

9_*6ꢁ ꢁꢅꢆꢈ9

0.8

0.6

0.4

0.2

0

ꢅꢆꢈ9

ꢅꢆꢇ9

1.8

1.6

1.4

1.2

1

ꢅꢆꢇ9

ꢊꢆꢈ9

ꢊꢆꢇ9

ꢉꢆꢇ9

0.8

0

0.25

0.5

0.75

1

0

0.2

0.4

0.6

1

9_'6ꢀꢁ'5$,1ꢂ6285&(ꢁ92/7$*(ꢁꢃ9ꢄ

Figure 1. On-Region Characteristics

,_'

ꢀꢁ'5$,1ꢁ&855(17ꢁꢃ$ꢄ

Figure 2. Normalized on-Resistance vs. Drain

Current and Gate Voltage

0.9

1.6

I_D= 300mA

,_'ꢁ ꢁꢋꢈꢈP$

_*6ꢁ ꢁꢉꢆꢇ9

0.8

0.7

0.6

9

1.4

1.2

1

T_A= 125^oC

0.5

0.4

0.8

0.6

0.3

T_A= 25^oC

0.2

1

2

3

4

5

-50

-25

0

25

50

75

100

125

150

V_GS, GATE TO SOURCE VOLTAGE (V)

7_-

ꢀꢁ-81&7,21ꢁ7(03(5$785(ꢁꢃ

^R

&ꢄ

Figure 3. Normalized on-Resistance vs.

Figure4. On-Resistance vs.

Temperature

Gate-to-Source Voltage

1.5

1

25^oC

V_DS= 5V

T_A= -55^oC

V_GS= 0V

1.2

0.9

0.6

0.3

0

125^oC

0.1

0.01

T_A= 125^oC

25^oC

-55^oC

0.001

0.0001

0.5

1

1.5

2

2.5

3

0

0.2

0.4

0.6

0.8

1

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward

Voltage vs. Source Current and Temperature

4

www.fairchildsemi.com

FDY4000CZ Rev. B2

Typical Characteristics Q1 (N-Channel)

100

90

80

70

60

50

40

30

20

10

0

5

Iꢁ ꢁꢌ0+]

9_*6 ꢁꢈꢁ9

,_'ꢁ ꢁꢋꢈꢈP$

ꢌꢇ9

4

&

9_'6ꢁ ꢁꢇ9

LVV

3

ꢌꢈ9

2

&

RVV

1

0

&

UVV

0

0.2

0.4

0.6

0.8

1

0

4

8

12

16

20

4_Jꢀꢁ*$7(ꢁ&+$5*(ꢁꢃQ&ꢄ

9_'6ꢀꢁ'5$,1ꢁ72ꢁ6285&(ꢁ92/7$*(ꢁꢃ9ꢄ

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs. Drain to source

voltage

10

30

SINGLE PULSE

R_ꢀJA= 280°C/W

T_A= 25°C

25

20

15

10

5

R_DS(ON)LIMIT

1

0.1

1ms

10ms

V_GS= 4.5V

100ms

SINGLE PULSE

10s

1s

DC

R_ꢀJA= 280^oC/W

T_A= 25^oC

0.01

0

0.1

1

10

100

0.0001 0.001

0.01

0.1

1

10

100

1000

V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power

Dissipation

1

D=0.5

0.2

R_ꢀJA(t) = r(t) * R

R_ꢀJA=280 °C/W

ꢀJA

0.1

0.05

0.02

0.01

P(pk)

0.1

t₁

t₂

T_J- T_A= P * R_ꢀJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.01

0.0001

0.001

0.01

0.1

1

10

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

5

www.fairchildsemi.com

FDY4000CZ Rev. B2

Typical Characteristics Q2 (P-Channel)

1

2.6

2.2

1.8

1.4

1

V_GS= -4.5V

-2.5V

V_GS=-1.8V

-2.0V

0.8

-4.0V

-3.0V

0.6

0.4

0.2

0

-2.0V

-2.5V

-1.8V

-3.0V

0.4

-3.5V

-4.0V

-4.5V

0.6

0

0.2

0.6

0.8

1

0

0.5

1

1.5

2

-I_D, DRAIN CURRENT (A)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 12. On-Region Characteristics

Figure 13. Normalized on-Resistance vs. Drain

Current and Gate Voltage

1.6

2

I_D= -0.35A

V_GS= -4.5V

I_D= -0.175A

1.75

1.5

1.4

1.2

1

1.25

1

T_A= 125^oC

0.75

T_A= 25^oC

0.5

0.8

0.25

0.6

0

2

4

6

8

10

-50

-25

0

J

25

50

75

100

125

150

T , JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 14. Normalized on-Resistance vs.

Figure15. On-Resistance vs.

Temperature

Gate-to-Source Voltage

1

0.1

1

V_GS= 0V

V_DS= -5V

0.8

0.6

0.01

T_A= 125^oC

0.4

T_A= 125^oC

-55^oC

25^oC

0.001

0.0001

0.2

-55^oC

25^oC

0

0.5

1

1.5

2

2.5

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 16. Transfer Characteristics

Figure 17. Source to Drain Diode Forward

Voltage vs. Source Current and Temperature

6

www.fairchildsemi.com

FDY4000CZ Rev. B2

Typical Characteristics Q2 (P-Channel)

10

150

125

100

75

f = 1 MHz

_GS= 0 V

I_D= -0.35A

V

8

V_DS= -5V

-15V

C

iss

6

-10V

4

C_oss

50

2

0

25

C

rss

0

0.5

1

1.5

2

2.5

0

2

4

6

8

10

12

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 18. Gate Charge Characteristics

Figure 19. Capacitance vs. Drain to source

voltage

10

1

10

SINGLE PULSE

R

_ꢂJA= 280Ⱌ/W

8

6

4

2

T

_A= 25Ⱌ

100ꢃs

R_DS(ON)LIMIT

1ms

10ms

100ms

1s

10s

DC

0.1

V_GS= -4.5V

SINGLE PULSE

R

_ꢂJA= 280^oC/W

T

_A= 25^oC

0

0.0001

0.001

0.01

0.1

1

10

100

0.01

t₁, TIME (sec)

0.1

1

10

100

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 20. Maximum Safe Operating Area

Figure21. Single Pulse Maximum Power

Dissipation

1

D = 0.5

R

_ꢂJA(t) = r(t) * R_ꢂJA

R_ꢂ_JA=280 Ⱌ /W

0.2

P(pk)

0.1

0.05

t₁

t₂

0.02

0.01

T_J- T_A= P * R_ꢂJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.01

0.0001

0.001

0.01

0.1

1

10

100

1000

t₁, TIME (sec)

Figure 22. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

7

www.fairchildsemi.com

FDY4000CZ Rev. B2

Dimensional Outline and Pad Layout

1.70

A

1.50

0.50

0.30

0.15

0.50

B

6

1

4

3

1.20 BSC

(0.20)

1.60

1.25

1.80

0.1 C B A

0.30

0.55

0.50

1.00

TOP VIEW

LAND PATTERN RECOMMENDATION

0.60

0.56

0.18

SEE DETAIL A

0.10

C

0.35 BSC

0.20 BSC

DETAIL A

SCALE 2 : 1

0.10

0.00

BOTTOM VIEW

NOTES:

A) THIS PACKAGE CONFORMS TO EIAJ

SC89 PACKAGING STANDARD.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DRAWING CONFORMS TO ASME Y14.5M-1994

D) DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSIONS.

MAD06ArevA

8

www.fairchildsemi.com

FDY4000CZ Rev. B2

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

®

AccuPower™

Auto-SPM™

FPS™

PowerTrench

PowerXS™

The Power Franchise

F-PFS™

®

Build it Now™

CorePLUS™

FRFET

Programmable Active Droop™

t

SM

®

Global Power Resource

Green FPS™

QFET

QS™

TinyBoost™

TinyBuck™

TinyCalc™

CorePOWER™

CROSSVOLT™

CTL™

Green FPS™ e-Series™

Gmax™

Quiet Series™

RapidConfigure™

®

TinyLogic

Current Transfer Logic™

GTO™

IntelliMAX™

®

TINYOPTO™

TinyPower™

EcoSPARK

™

EfficentMax™

EZSWITCH™*

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Saving our world, 1mW /W /kW at a time™

TinyPWM™

SmartMax™

TinyWire™

™*

SMART START™

®

TriFault Detect™

TRUECURRENT™*

SPM

MicroPak™

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™

®*

®

tm

MillerDrive™

MotionMax™

Motion-SPM™

®

Fairchild

®

Fairchild Semiconductor

FACT Quiet Series™

UHC

®

OPTOLOGIC

Ultra FRFET™

UniFET™

VCX™

®

FACT

OPTOPLANAR

®

FAST

FastvCore™

VisualMax™

XS™

tm

FETBench™

PDP SPM™

Power-SPM™

®

FlashWriter

*

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I41

9

www.fairchildsemi.com

FDY4000CZ Rev. B2

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

www.onsemi.com

1


型号：	FDY4000CZ
厂家：	ONSEMI
描述：	互补，N 和 P 沟道，PowerTrench® MOSFET，20V PC 开关光电二极管晶体管
文件：	总11页 (文件大小：348K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDY4000CZ [ONSEMI]

相关型号：

FDY4001CZ

FDY6342L

FDY6342L

FDZ09/15PSG1EL-K1019

FDZ09/15PSG1L-K1019

FDZ09/15PSG1LL-K1019

FDZ09/15PSG1M-K1019

FDZ09/15PSG1MR-K1019

FDZ09/15PSG1S-K1019

FDZ09/15PSG1SL-K1019

FDZ09/15PSG2E-K1019

FDZ09/15PSG2EL-K1019