FDWS86068-F085 [ONSEMI]
N 沟道 PowerTrench® MOSFET 100V，80A，4.5mΩ;
| 型号： | FDWS86068-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 100V，80A，4.5mΩ 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
I
D
MAX
R
MAX
DS(on)
DSS
100 V
80 A
6.4 mΩ
100 V, 80 A, 6.4 mW
ELECTRICAL CONNECTION
FDWS86068-F085
Features
• Typ R
• Typ Q
= 5.2 mW at V = 10 V, I = 80 A
GS D
DS(on)
= 31 nC at V = 10 V, I = 80 A
g(tot)
GS
D
• UIS Capability
• Qualified to AEC Q101
N−Channel MOSFET
• Wettable flanks for automatic optical inspection (AOI)
• These Devices are Pb−Free and are RoHS Compliant
Bottom
Top
D
D
D
Applications
D
• Automotive Engine Control
• Powertrain Management
• Solenoid and Motor Drivers
• Electronic Steering
G
S
S
S
Pin 1
DFNW8
CASE 507AU
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
A
MARKING DIAGRAM
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
100
Unit
V
V
DSS
V
GS
20
V
ON
AYWWWL
FDWS
I
D
Drain Current (T = 25°C)
A
C
Continuous (V = 10 V) (Note 1)
80
GS
86068
Pulsed
(see Fig. 4)
E
AS
Single Pulse Avalanche Energy
(Note 2)
36
mJ
P
D
Power Dissipation
Derate above 25°C
214
1.43
W
W/°C
A
Y
= Assembly Location
= Year
WW
WL
= Work Week
= Assembly Lot
T , T
Operating and Storage Temperature
−55 to +150
°C
J
STG
R
Thermal Resistance
(Junction to case)
0.7
°C/W
FDWS86068 = Specific Device Code
θ
JC
R
Maximum Thermal Resistance
(Junction to Ambient) (Note 3)
50
°C/W
θ
JA
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by wirebond configuration.
†
Device
Package
Shipping
DFNW8
(Power 56)
(Pb−Free)
FDWS86068−F085
3000 /
Tape & Reel
2. Starting T = 25°C, L = 20 μH, I = 60 A, V = 80 V during inductor charging
J
AS
DD
and V = 0 V during time in avalanche.
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal
θ
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R is guaranteed by design while R
is determined by the user’s board design. The maximum rating presented
here is based on mounting on a 1 in2 pad of 2oz copper.
θ
θ
JA
JC
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2021 − Rev. 3
FDWS86068−F085/D
FDWS86068−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
B
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
I
= 250 μA, V = 0 V
100
−
−
V
VDSS
D
GS
I
V
= 100 V, V = 0 V
DS GS
J
J
DSS
(T = 25°C)
−
−
−
−
1
1
mA
mA
(T = 175°C) (Note 4)
I
Gate to Source Leakage Current
V
GS
=
20 V
−
−
100
nA
GSS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
V
= V , I = 250 μA
2
3
4
V
GS(th)
DS(on)
GS
DS
D
R
= 10 V, I = 80 A
D
(T = 25°C)
GS
J
J
−
−
5.2
11.4
6.4
14
mW
(T = 175°C) (Note 4)
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 50 V, V = 0 V,
−
−
−
−
−
−
−
−
2220
1350
19
−
−
pF
pF
pF
Ω
iss
DS
GS
f = 1 MHZ
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
−
rss
R
V
GS
V
GS
V
GS
V
DD
= 0.5 V, f = 1 MHz
0.3
31
−
g
Q
Total Gate Charge
= 0 to 10 V, V = 50 V, I = 80 A
43
−
nC
nC
nC
nC
g(tot)
DD
D
Q
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
4
= 0 to 2 V, V = 50 V, I = 80 A
g(th)
DD
D
Q
= 50 V, I = 80 A
12
−
gs
D
Q
7
−
gd
SWITCHING CHARACTERISTICS
t
Turn-On Time
V
DD
V
GS
= 50 V, I = 80 A,
−
−
−
−
−
−
−
15
6
30
−
ns
ns
ns
ns
ns
ns
on
D
= 10 V, R
= 6 Ω
GEN
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
d(on)
t
r
−
t
24
7
−
d(off)
t
f
−
t
−
48
off
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
I
I
= 80 A, V = 0 V
−
−
−
−
0.95
0.87
61
1.3
1.2
80
V
V
SD
SD
GS
= 40 A, V = 0 V
SD
GS
T
Reverse Recovery Time
I = 80 A, dI /dt = 100 A/μs
F
ns
nC
rr
SD
Q
Reverse Recovery Charge
56
84
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production
J
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2
FDWS86068−F085
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
140
120
100
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10 V
GS
Current Limited by Package
60
40
20
0
0
25
50
75
100 125
150 175
25
50
75
100
125
150
175
T , Case Temperature (5C)
C
T , Case Temperature (5C)
C
Figure 1. Normalized Power Dissipation
vs. Case Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
1000
1
0.1
0,5
0,2
0,1
0,05
0,02
0,01
Single
Pulse
100
10
0.01
0.00001 0.0001 0.001 0.01
0.1
1
10
0.00001 0.0001 0.001 0.01
0.1
1
10
t, Rectangular Pulse Duration
t, Rectangular Pulse Duration (s)
Figure 3. Normalized Maximum Transient
Thermal Impedance
Figure 4. Peak Current Capability
1000,0
If R = 0
t
= (L)(IAS) / (1.3 x RATED BVDSS − VDD)
AV
100
10
1
If R ≠ 0
t
AV
= (L/R)ln[(IAS x R) / (1.3 x RATED BVDSS
− VDD) + 1]
100 μs
OPERATION IN
Starting T = 25°C
J
THIS AREA MAY BE
1 ms
1.0
0.1
0.0
LIMITED BY R
DS(on)
10 ms
SINGLE PULSE
Starting T = 150°C
J
T
T
= MAX RATED
= 25°C
100 ms
J
C
0
1
10
100
0.001
0.01
0.1
t , Time Avalanche (ms)
AV
1
10
100
V
DS
, Drain to Source Voltage (V)
(Note: Refer to onsemi Applications Notes AN7514
and AN7515)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive
Switching Capability
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3
FDWS86068−F085
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
200
160
120
80
V
= 0 V
100
10
GS
V
= 5 V
DS
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
T = 175°C
J
1
0.1
175°C
25°C
−55°C
25°C
40
0.01
0.001
−55°C
0
2
0.0
4
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, Gate to Source Voltage (V)
V
, Body Diode Forward Voltage (V)
GS
SD
Figure 7. Transfer Characteristic
Figure 8. Forward Diode Characteristics
250
250
200
150
100
50
Pulse Width = 250 μs
Pulse Width = 250 μs
T = 25°C
J
T = 175°C
J
200
150
100
50
V
GS
= 15 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
V
GS
= 15 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
0
0
1.0
2.0
3.0
4.0
5.0
0
1
2
3
4
5
V
, Drain−Source Voltage (V)
V
, Drain−Source Voltage (V)
DS
DS
Figure 9.
Figure 10. Peak Current Capability
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
40
30
20
10
0
I
D
= 80 A
Pulse Duration = 250 μs
Duty Cycle = 0.5 % Max
Pulse Duration = 250 μs
Duty Cycle = 0.5 % Max
I
D
= 80 A
T = 175°C
J
V
GS
=10 V
T = 25°C
J
−80 −40
0
40
80
120 160 200
5
6
7
8
9
10
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
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4
FDWS86068−F085
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.10
I
D
= 5 mA
V
= V
GS
= 250 μA
GS
1.05
1.00
0.95
0.90
I
D
−80 −40
0
40
80
120 160 200
−80 −40
0
40
80
120 160 200
T , Junction Temperature (5C)
J
T , Junction Temperature (5C)
J
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source Breakdown
Voltage vs. Junction Temperature
10000
10
I
= 80 A
V
= 50 V
D
DD
C
C
iss
oss
8
6
4
2
0
1000
100
10
V
DD
= 40 V
V
= 60 V
DD
C
rss
f = 1 MHz
= 0 V
V
GS
1
0.1
1
10
100
0
5
10
15
20
25
30
35
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 15. Capacitance vs. Drain to Source Voltage
Figure 16. Gate Charge vs. Gate to Source Voltage
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5
FDWS86068−F085
PACKAGE DIMENSIONS
DFNW8 5.2x6.3, 1.27P
CASE 507AU
ISSUE A
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6
FDWS86068−F085
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
onsemi,
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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