FDT4N50NZU [ONSEMI]
Power MOSFET, N-Channel, UniFET II, Ultra FRFET, 500 V, 2 A, 3.0 Ω, SOT223;
| 型号： | FDT4N50NZU |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, UniFET II, Ultra FRFET, 500 V, 2 A, 3.0 Ω, SOT223 |
| 文件： | 总10页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power,
N-Channel, UniFETt II,
Ultra FRFETt
500 V, 2 A, 3 W
FDT4N50NZU
Description
www.onsemi.com
UniFET II MOSFET is ON Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on−state
resistance among the planar MOSFET, and also provides superior
switching performance and higher avalanche energy strength. In
addition, internal gate−source ESD diode allows UniFET II MOSFET
to withstand over 2 kV HBM surge stress. UniFET II Ultra FRFET
MOSFET has much superior body diode reverse recovery
performance. Its trr is less than 50 nsec and the reverse dv/dt immunity
is 20 V/nsec while normal planar MOSFETs have over 200 nsec and
4.5 V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET
can remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switching
power converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
V
R
MAX
I MAX
D
DSS
DS(ON)
500 V
3
ꢀ
@
1
0
V
2 A
D
G
S
POWER MOSFET
D
Features
• Typ. R
= 2.42 ꢀ
DS(on)
G
D
• Ultra Low Gate Charge (Typ. Q = 9.1 nC)
g
S
• 100% Avalanche Tested
SOT−223
(TO−261)
CASE 318E
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
MARKING DIAGRAM
• Computing / Display Power Supplies
• Industrial Power Supplies
• Consumer Power Supplies
D
AYW
4N50U
G
D
S
A
Y
= Assembly Location
= Year
W
= Work Week
4N50U = Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2021 − Rev. 1
FDT4N50NZU/D
FDT4N50NZU
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
500
DSS
GSS
V
− DC
− Continuous (T = 25°C)
25
V
I
D
2
A
C
− Continuous (T = 100°C)
1.2
C
I
Drain Current
− Pulsed (Note 1)
6
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
46
AS
AS
I
2
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
2
mJ
V/ns
W
AR
dv/dt
20
2
P
(T = 25°C)
C
D
− Derate Above 25°C
0.02
W/°C
°C
T , T
Operating and Storage Temperature Range
−55 to +150
300
J
STG
T
L
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 2 A, R = 25 ꢀ, starting T = 25°C.
AS
G
J
3. I ≤ 3 A, di/dt ≤ 100 A/ꢁ s, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
2
R
Thermal Resistance, Junction to Ambient, (1 in Pad of 2 oz. Copper) Max.
60
_C/W
ꢂ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
12 mm
Quantity
†
FDT4N50NZU
FDT4N50NZU
SOT−223
Tape & Reel
330 mm
4000 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FDT4N50NZU
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
I
= 0 V, I = 250 ꢁ A, T = 25_C
500
V
DSS
GS
D
J
ꢃ
B
V
/
ꢃ
T
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.55
4.6
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 500 V, V = 0 V
1
ꢁ
A
DSS
GS
= 400 V, T = 125_C
C
I
Gate to Body Leakage Current
=
25 V, V = 0 V
10
ꢁ
A
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 250 ꢁ A
3.5
5.5
3
V
ꢀ
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 1 A
2.42
1
D
g
FS
= 20 V, I = 1 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
476
43
pF
pF
pF
nC
nC
nC
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
2.7
9.1
2.9
3.3
rss
Q
V
DS
= 400 V, I = 3 A, V = 10 V
D GS
g(tot)
(Note 4)
Q
gs
Q
gd
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 250 V, I = 3 A, V = 10 V,
16
16
34
15
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 25
ꢀ
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
2
6
A
A
S
I
SM
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 1 A
1.2
V
SD
GS
SD
t
= 400 V, I = 3 A, dI /
24
18
ns
nC
rr
DD
SD
F
dt = 100 A/ꢁ s
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FDT4N50NZU
TYPICAL CHARACTERISTICS
6
250 ꢁ s Pulse Test
= 25°C
V
DS
= 20 V
T
C
6
4
V
GS
= 20 V
7.0 V
6.5 V
5
4
3
2
15 V
10 V
8.0 V
T = 150°C
J
T = 25°C
J
2
0
6.0 V
18
1
0
2
4
6
8
10
12
14
16
20
3
0
0
4
5
6
7
8
9
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.8
3.6
10
1
V
= 10 V
GS
T = 25°C
T = 150°C
J
J
3.4
3.2
3.0
2.8
2.6
2.4
T = 25°C
J
0.1
0.01
2.2
2.0
V
= 0 V
1.5
GS
0.001
0
1
2
3
4
5
6
7
0.5
1.0
2.0
I , DRAIN CURRENT (A)
V
, BODY DIODE FORWARD VOLTAGE (V)
D
SD
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Current and Gate Voltage
1000
100
10
8
V
= 100 V
DD
C
iss
V
DD
= 250 V
V
= 400 V
DD
6
C
oss
4
10
1
2
0
f = 1 MHz
= 0 V
C
rss
V
I
D
= 3 A
8
GS
0.1
1
10
100
2
4
6
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
CHARGE (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FDT4N50NZU
TYPICAL CHARACTERISTICS
2.00
1.2
1.1
1.0
I
V
= 250 ꢁ A
D
I
D
= 1 A
= 0 V
GS
1.75
1.50
1.25
1.00
V
GS
= 10 V
0.9
0.8
0.75
0.50
−75
−25
25
75
125
175
1000
0.01
0
25
50
75
100
125
150
175
T , AMBIENT TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
2.5
2.0
1.5
1.0
Operation in this area
is limited by R
10
1
DS(on)
100 ꢁ s
1 ms
10 ms
0.1
T
= 25°C
C
0.5
0
100 ms
DC
T = 150°C
Single Pulse
J
0.01
1
10
100
25
50
75
100
125
150
V
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
DS
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
10
1
0.1
0.05
Duty Cycle = 0.5
0.2
0.1
0.01
0.02
0.01
1E−03
1E−04
P
DM
Notes:
Z
T
(t) = 60°C/W Max.
ꢂ
JA
t
− T = P
x Z (t)
ꢂ
DM JC
1
JM
C
Single Pulse
1E−05
1E−06
Duty Factor, D = t /t
t
1
2
2
1E−06
1E−05
0.0001
0.001
0.1
1
10
100
1000
t, SQUARE WAVE PULSE DURATION (sec)
Figure 11. Transient Thermal Response
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5
FDT4N50NZU
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
FDT4N50NZU
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Ultra FRFET and UniFET are trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other coun-
tries.
www.onsemi.com
7
FDT4N50NZU
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
q
q
www.onsemi.com
8
FDT4N50NZU
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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