FDT86106LZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，3.2A，108mΩ;
| 型号： | FDT86106LZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，3.2A，108mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
108 mW @ 10 V
153 mW @ 4.5 V
3.2 A
100 V, 3.2 A, 108 mW
FDT86106LZ
D
General Description
This N−Channel logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been special
tailored to minimize the on−state resistance and yet maintain superior
switching performance. G−S zener has been added to enhance ESD
voltage level.
S
D
G
SOT−223
CASE 318H
Features
Max r
Max r
= 108 mW at V = 10 V, I = 3.2 A
GS D
DS(on)
DS(on)
MARKING DIAGRAM
= 153 mW at V = 4.5 V, I = 2.7 A
GS
D
High Performance Trench Technology for Extremely Low r
High Power and Current Handling Capability in a Widely Used
Surface Mount Package
HBM ESD Protection Level > 3 kV Typical (Note 4)
100% UIL Tested
DS(on)
AYW
106LZG
G
1
A
Y
= Specific Device Code
= Date Code
This Device is Pb−Free, Halide Free and is RoHS Compliant
W
= Work Week
Applications
DC − DC Conversion
106LZ = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Symbol
Parameter
Drain−Source Voltage
Ratings Unit
V
DS
100
20
3.2
V
V
A
PINOUT
V
GS
Gate−Source Voltage
D
I
D
Drain Current
− Continuous
A
T = 25C
(Note 1a.)
− Pulsed
12
12
E
Single Pulse Avalanche Energy
(Note 3)
mJ
W
AS
P
Power
Dissipation
T = 25C
(Note 1a.)
(Note 1b.)
2.2
1.0
D
A
G
D
S
T = 25C
A
T , T
Operating and Storage Junction
Temperature Range
−55 to
+150
C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
FDT86106LZ
Package
Shipping
106LZ
4000 / Tape &
Reel
THERMAL CHARACTERISTICS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Symbol
RqJC
Parameter
Ratings
12
Unit
C/W
C/W
Thermal Resistance, Junction to Case
RqJA
Thermal Resistance, Junction to Ambient
(Note 1a.)
55
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
July, 2022 − Rev. 3
FDT86106LZ/D
FDT86106LZ
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25C
−
71
mV/C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
−
−
−
−
1
mA
mA
DSS
GSS
DS
GS
I
= 20 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.5
–5
2.2
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25C
−
−
mV/C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
= 10 V, I = 3.2 A
−
−
−
80
100
140
108
153
189
mW
DS(on)
D
= 4.5 V, I = 2.7 A,
D
= 10 V, I = 3.2 A, T = 125C
D
J
g
FS
Forward Transconductance
V
DS
= 10 V, I = 3.2 A
−
8
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
−
234
46
315
65
5
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
3.1
rss
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Rise Time
V
V
= 50 V, I = 3.2 A,
−
−
−
−
−
−
−
−
3.8
1.3
10
10
10
20
10
7
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn–Off Delay Time
Fall Time
ns
d(off)
t
f
1.5
4.3
2.4
0.7
0.9
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 50 V, I = 3.2 A
nC
nC
nC
nC
g
g
DD
D
= 0 V to 5 V, V = 50 V, I = 3.2 A
4
DD
D
Q
= 50 V, I = 3.2 A
−
gs
gd
D
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward Voltage
V
GS
V
GS
= 0 V, I = 3.2 A (Note 2)
−
−
0.86
0.77
1.3
1.2
V
S
= 0 V, I = 1 A (Note 2)
S
t
Reverse Recovery Time
I = 3.2 A, di/dt = 100 A/s
F
−
−
31
21
49
34
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JA
JC
a. 55C/W when mounted on
b. 118C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
3. Starting T = 25C, L = 1 mH, I = 5 A, V = 90 V, V = 10 V.
J
AS
DD
GS
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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2
FDT86106LZ
TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
12
9
5
V
= 3 V
V
= 10 V
= 4.5 V
= 4 V
GS
GS
V
GS
4
3
2
1
V
GS
V
= 3.5 V
GS
V
= 3.5 V
= 3 V
GS
6
V
= 4V
V
GS
GS
3
0
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
= 4.5 V
= 10V
V
6
GS
GS
0
0
3
9
12
1
4
5
0
2
3
I , Drain Current (A)
D
V
DS
, Drain to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
2.0
1.8
500
400
300
I
V
= 3.2 A
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
D
I
D
= 3.2 A
= 10 V
GS
1.6
1.4
1.2
200
100
0
T = 125C
J
1.0
0.8
0.6
T = 25C
J
−75 −50 −25
0
25
50 75 100 125 150
2
4
6
8
10
T , Junction Temperature (C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate
vs. Junction Temperature
to Source Voltage
20
10
12
9
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 0 V
T = 25C
J
T = 150C
J
1
0.1
V
DS
= 5 V
T = 150C
J
6
T = 25C
J
T = −55C
J
3
0
0.01
T = −55C
J
0.001
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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3
FDT86106LZ
TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted) (continued)
J
400
100
10
8
I
D
= 3.2 A
C
iss
V
DD
= 50 V
6
4
2
0
C
oss
V
= 75 V
DD
V
DD
= 25 V
10
1
f = 1 MHz
= 0 V
C
rss
V
GS
1
4
5
0
2
3
0.1
1
10
100
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
−1
10
7
6
5
4
V
DS
= 0 V
−2
−3
−4
−5
−6
−7
−8
−9
10
10
10
10
10
10
10
10
T = 125C
J
T = 25C
J
T = 25C
J
T = 100C
J
3
2
1
T = 125C
J
−10
10
0.01
5
10
V , Gate to Source Voltage (V)
GS
15
20
25
30
35
0
0.1
, Time in Avalanche (ms)
1
2
t
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Gate Leakage Current vs. Gate
to Source Voltage
20
10
8
6
4
2
100 ms
V
= 10 V
GS
1
1 ms
This area is
limited by r
10 ms
100 ms
Limited by package
DS(on)
V
= 4.5 V
GS
0.1
Single Pulse
T = Max Rated
1 s
J
R
= 118C/W
q
10 s
DC
JA
R
= 12C/W
q
JC
T = 25C
A
0.01
0
1
25
50
75
100
125
150
0.1
10
100
400
T , Case Temperature (C)
C
V
DS
, Drain to Source Voltage (V)
Figure 11. Maximum Continuous Drain Current
vs. Case temperature
Figure 12. Forward Bias Safe Operating Area
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4
FDT86106LZ
TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted) (continued)
J
300
100
10
Single Pulse
= 118C/W
T = 25C
A
R
q
JA
1
0.5
−4
−3
−2
−1
10
10
10
10
t, Pulse Width (s)
1
10
100
1000
Figure 13. Single Pulse Maximum Power Dissipation
2
Duty Cycle Descending Order
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
0.01
Notes:
Duty Factor: D = t / t
Single Pulse
1
2
R
= 118C/W
q
JA
Peak T = P
Z
R
+ T
JA A
q
q
J
DM
JA
0.001
−3
−2
−1
−4
10
10
10
1
10
100
1000
10
t, Rectangular Pulse Duration (s)
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223
CASE 318H
ISSUE B
DATE 13 MAY 2020
SCALE 2:1
A
Y
W
= Assembly Location
= Year
= Work Week
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AYW
XXXXXG
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASH70634A
SOT−223
PAGE 1 OF 1
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