FDS8817NZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，15A，7.0mΩ;
| 型号： | FDS8817NZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，15A，7.0mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
D
D
D
D
30 V, 15 A, 7.0 mW
G
S
S
S
Pin 1
FDS8817NZ, FDS8817NZ-G
SOIC8
CASE 751EB
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance.
MARKING DIAGRAM
This device is well suited for Power Management and load
switching applications common in Notebook Computers and Portable
Battery Packs.
$Y&Z&2&K
FDS
8817NZ
Features
• Max r
• Max r
= 7 mW at V = 10 V, I = 15 A
GS D
DS(on)
DS(on)
= 10 mW at V = 4.5 V, I = 12.6 A
GS
D
• HBM ESD Protection Level of 3.8 kV Typical*
• High Performance Trench Technology for Extremely Low r
• High Power and Current Handling Capability
$Y
&Z
&2
&K
= onsemi Logo
DS(on)
= Assembly Plant Code
= Numeric Date Code
= Lot Code
• These Devices are Pb−Free and are RoHS Compliant
FDS8817NZ = Specific Device Code
Specifications
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
PIN ASSIGNMENT
A
Symbol
Parameter
Drain to Source Voltage
Ratings
30
Unit
V
V
DS
V
GS
G
D
Gate to Source Voltage
Drain Current
20
V
I
D
Continuous (Note 1a)
Pulsed
15
A
S
S
S
D
D
D
60
E
Single Pulse Avalanche Energy (Note 2)
181
2.5
mJ
W
AS
P
Power Dissipation
(Note 1a)
(Note 1b)
D
1.0
T , T
Operating and Storage Junction
Temperature Range
−55 to +150 °C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
*The diode connected between the gate and source serves only as protection
against ESD. No gate overvoltage rating is implied.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
February, 2022 − Rev. 4
FDS8817NZ/D
FDS8817NZ, FDS8817NZ−G
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
25
Unit
R
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
_C/W
q
q
q
JC
JA
JA
JA
R
50
R
125
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
JA
2
a. 50°C/W when mounted on a 1 in pad
b. 125°C/W when mounted on a minimum
pad
of 2 oz copper
2. Starting T = 25°C; L = 3 mH, I = 11 A, V = 30 V, V = 10 V.
J
AS
DD
GS
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2
FDS8817NZ, FDS8817NZ−G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
20
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
1
mA
mA
DS
GS
I
=
20 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS (Note 3)
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1
1.8
3
V
GS(th)
GS
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−6
mV/°C
GS(th)
D
DT
J
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 15 A
5.4
7.0
7.5
54
7
mW
DS(on)
D
= 4.5 V, I = 12.6 A
10
11
D
= 10 V, I = 15 A, T = 125°C
D
J
g
FS
= 5 V, I = 15 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V, f = 1 MHz
1805
335
200
1.4
2400
445
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
300
rss
R
f = 1 MHz
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 15 V, I = 15 A, V = 10 V,
GEN
11
13
25
7
22
26
40
14
45
24
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 15 V, I = 15 A
32
17
6
nC
nC
nC
nC
g
DD
D
= 0 V to 5 V, V = 15 V, I = 15 A
DD
D
Q
Gate to Source Charge
= 15 V, I = 15 A
D
gs
Q
Gate to Drain “Miller” Charge
7
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = 2.1 A (Note 3)
0.8
1.2
V
S
t
Reverse Recovery Time
I = 15 A, di/dt = 100 A/ms
F
24
15
36
23
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDS8817NZ, FDS8817NZ−G
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
60
45
30
15
0
5
PULSE DURATION = 80 ms
= 10 V
V
GS
V
= 3.0 V
GS
DUTY CYCLE = 0.5% MAX
V
= 4.5 V
GS
4
V
= 4.0 V
GS
V
= 3.5 V
= 4.5 V
GS
V
GS
= 3.5 V
3
2
1
0
V
GS
V
GS
= 4.0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
V
GS
= 3.0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
15
30
45
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.8
26
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 7.5 A
I
V
= 15 A
D
1.6
1.4
1.2
1.0
0.8
0.6
= 10 V
GS
22
18
14
T = 125°C
J
10
6
T = 25°C
J
2
−50 −25
0
25 50
75 100 125 150
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
60
100
PULSE DURATION = 80 ms
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
50
10
1
V
DD
= 5 V
40
30
20
10
0
T = 150°C
J
T = 25°C
J
0.1
T = 25°C
J
T = 150°C
J
T = −55°C
J
0.01
T = −55°C
J
0.001
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDS8817NZ, FDS8817NZ−G
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
3000
I
D
= 15 A
C
iss
1000
V
DD
= 10 V
6
V
DD
= 15 V
C
oss
V
DD
= 20 V
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
100
0.1
0
0
5
10
15
20
25
30
35
400
150
30
1
10
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
1E−3
20
10
V
GS
= 0 V
1E−4
1E−5
1E−6
1E−7
1E−8
1E−9
T = 150°C
J
T = 25°C
J
T = 125°C
J
T = 25°C
J
1
0.01
0
5
10
15
20
25
30
0.1
1
10
100
t
, TIME IN AVALANCHE (ms)
V
GS
, GATE TO SOURCE VOLTAGE (V)
AV
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Gate Leakage Current vs. Gate to
Source Voltage
15
12
100
r
LIMITED
DS(on)
100ms
10
1
V
= 10 V
GS
1s
9
6
3
0
10ms
100ms
1s
V
= 4.5 V
GS
SINGLE PULSE
T = MAX RATED
J
0.1
R
T
= 125°C/W
q
10s
DC
JA
= 25°C
A
R
= 50°C/W
q
JA
0.01
25
50
75
100
125
0.01
0.1
1
10
100
T , AMBIENT TEMPERATURE (°C)
A
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain
Current vs. Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
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5
FDS8817NZ, FDS8817NZ−G
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2000
1000
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10 V
100
10
150 * T
A
Ǹ
ƪ ƫ
I + I
25
125
SINGLE PULSE
= 125°C/W
T = 25°C
A
R
q
JA
1
0.2
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
J
x Z
x R
+ T
qJA A
°
DM
qJA
= 125
R
C/W
qJA
0.001
0.0002
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 14. Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package Type
SOIC8 (Pb−Free)
SOIC8 (Pb−Free)
Shipping
FDS8817NZ
FDS8817NZ
FDS8817NZ
2500 / Tape & Reel
2500 / Tape & Reel
FDS8817NZ−G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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