FDS6930A [ONSEMI]
双 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,5.5A,40mΩ;型号: | FDS6930A |
厂家: | ONSEMI |
描述: | 双 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,5.5A,40mΩ 开关 光电二极管 晶体管 |
文件: | 总6页 (文件大小:253K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FDS6930A
Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are
5.5 A, 30 V. RDS(ON) = 0.040 W @ VGS = 10 V
RDS(ON) = 0.055 W @ VGS = 4.5 V.
produced
using
ON
Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
RDS(ON)
.
High power and current handling capability.
SuperSOTTM-6
SuperSOTTM-8
SOIC-16
SOT-23
SO-8
SOT-223
D2
5
6
7
8
4
D2
D1
3
2
D1
G2
S2
1
G1
pin 1
SO-8
S1
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
FDS6930A
Units
Drain-Source Voltage
30
V
VDSS
VGSS
ID
Gate-Source Voltage
±20
V
A
Drain Current - Continuous
- Pulsed
(Note 1a)
5.5
20
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1)
2
1.6
W
W
PD
(Note 1a)
(Note 1b)
(Note 1c)
1
0.9
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient (Note 1a)
78
40
°C/W
°C/W
RqJA
RqJC
Thermal Resistance, Junction-to-Case
(Note 1)
© 1998
Publication Order Number:
FDS6930A/D
4
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = 250 µA
30
V
ID = 250 µA, Referenced to 25 oC
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
20
DBVDSS/DTJ
1
µA
µA
nA
nA
IDSS
VDS = 24 V, VGS = 0 V
10
TJ = 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
1
1.5
-4
3
V
mV/oC
Gate Threshold Voltage Temp. Coefficient
DVGS(th)/DTJ
RDS(ON)
Static Drain-Source On-Resistance
0.032
0.048
0.044
0.04
0.068
0.055
VGS = 10 V, ID = 5.5 A
W
TJ =125°C
VGS = 4.5 V, ID = 4.8 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, ID = 5.5 A
ID(ON)
gFS
On-State Drain Current
20
A
S
Forward Transconductance
12
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
460
115
45
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
5
8
11
17
ns
ns
tD(on)
tr
tD(off)
tf
VDS = 15 V, ID = 1 A
VGS = 10 V , RGEN = 6 W
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
17
13
5
28
24
7
ns
ns
Qg
Qgs
Qgd
VDS = 5 V, ID = 5.5 A,
VGS = 5 V
nC
nC
nC
2
0.9
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
1.3
1.2
A
V
IS
VSD
VGS = 0 V, IS = 1.3 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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2
Typical Electrical Characteristics
4
3
2
1
0
30
V
=10V
6.0V
5.0V
4.5V
4.0V
GS
V
= 3.0V
24
18
12
6
GS
3.5 V
3.5V
4.0 V
4.5 V
5.5 V
10V
3.0V
3
0
0
6
12
18
24
30
0
1
2
4
5
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0.2
0.15
0.1
1.6
ID = 2.5A
I
V
= 5.5A
D
= 10V
GS
1.4
1.2
1
125°C
25°C
0.05
0
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
GS
J
Figure 3. On-Resistance Variation with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Temperature.
20
15
12
9
V
= 0V
V
=5.0V
DS
GS
T
= -55°C
J
25°C
T = 125°C
J
1
125°C
25°C
-55°C
0.1
6
0.01
3
0.001
0
0
0.2
0.4
, BODY DIODE FORWARD VOLTAGE (V)
SD
0.6
0.8
1
1.2
1.4
1
2
3
4
5
V
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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3
Typical Electrical Characteristics
1000
500
10
I
= 5.5A
V
= 5V
D
DS
C
iss
8
6
4
2
0
10V
15V
200
100
50
C
oss
f = 1 MHz
= 0 V
C
rss
V
GS
0.1
0.2
0.5
1
2
5
10
30
0
2
4
6
8
10
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
30
25
100
50
SINGLE PULSE
=135 °C/W
R
JA
q
10
TA = 25°C
20
15
10
5
2
0.5
V
=10V
GS
SINGLE PULSE
=135°C/W
R
q
JA
0.05
0.01
T
A
=25°C
0
0.01
0.1
0.5
10
50 100
300
0.1
0.5
1
2
5
10
30 50
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
JA
q
JA
q
0.2
0.1
R
=135° C/W
JA
q
0.1
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t
1
t
2
Single Pulse
T
- T = P * R
(t)
JA
0.005
J
A
q
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t , TIME (sec)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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